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 September, 2009 -- Electromechanics on the Nanometer Scale: Emerging Phenomena, Devices, and Applications

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 Volume 1210
Editors: B. Sopori, J. Yang, T. Surek, B. Dimmler
ISBN: 978-1-60511-183-4

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 Volume 1203
Editors: P. Bergonzo, J.E. Butler, R.B. Jackman, K.P. Loh, M. Nesladek
ISBN: 978-1-60511-176-6

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 Volume 1195
Editors: O. Ueda, M. Fukuda, S. Pearton, E. Piner, P. Montanegro
ISBN: 978-1-60511-168-1

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 August 2008 -- Hard Materials with Tunable Porosity

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 July 2009 -- Materials Science Challenges in Ultimate Scaling of CMOS Logic Devices

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 May 2009 -- Nonpolar and Semipolar Group III Nitride-Based Materials

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 Volume 1183
Editors: O.G. Heinonen, S. Sanvito, V.A. Dediu, N. Rizzo
ISBN: 978-1-60511-156-8
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 Volume 1181
Editors: D. Ila, P.K. Chu, N. Kishimoto, J.K.N. Lindner, J. Baglin
ISBN: 978-1-60511-154-4
Online Papers Available Shortly

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 Volume 1167
Editors: F. Shahedipour-Sandvik, E.F. Schubert, L.D. Bell, V. Tilak, A.W. Bett
ISBN: 978-1-60511-140-7
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• Inclined Substrate Deposition by Evaporation of Magnesium Oxide for Coated Conductors O2.2
  Authors: Markus Bauer, Ralf Metzger, Robert Semerad, Paul Berberich, and Helmut Kinder


• Ion beam induced growth structure O2.3
  Authors: Y Iljima, M. Kimura, and T. Saitoh


• Atomic-scale control of oxide substrate surface/termination and novel heteroepitaxial growth O3.1
  Authors: Mamoru Yoshimoto, Keisuke Mizuno, and Takafumi Miyahara


• Growth and Structural Characterization of Sr₂TiO₄: Chemical Control over the Terminating SrTiO₃ Surface O3.3
  Authors: P. A. Salvador, B. Mercey, O. Perez, A. M. Haghiri-Gosnet, T.D. Doan, and B. Raveau


• Wet etching methods for perovskite substrates O3.6
  Authors: Victor Leca, Guus Rijnders, Gertjan Koster, Dave Blank, and Horst Rogalla


• Epitaxial Electronic Oxides on Semiconductors using Pulsed-Laser Deposition O3.7
  Authors: D. P. Norton, J. D. Budai, and M. F. Chisholm


• Si/SiC UHV Direct Wafer Bonded Interface Structure O4.2
  Authors: M.J. Kim, Hong Xu, R.J. Liu, M.J. Cox, and R.W. Carpenter


• Mechanistic Studies of Wafer Bonding and Thin Silicon Film Exfoliation O4.4
  Authors: Y.J. Chabal, E.D. Isaacs, and M.K. Weldon


• Low Temperature Bonding of Ceramics by Sol-Gel Processing O4.6
  Authors: C.J Barbe, D.J. Cassidy, G. Triani, B.A. Latella, D.R.M. Mitchell, A. Day, and K. Short


• Low-Pressure Chemical Vapor Deposition of Borosilicate Glasses and their Application to Wafer Bonding O4.7
  Authors: Darren M. Hansen, Peter D. Moran, and T.F. Kuech


• Growth of Large Diameter Silicon-Germanium Monocrystals O5.7
  Authors: Richard H. Deitch, Stephen H. Jones, and Thomas G. Digges Jr.


• Instabilities and Point Defects at Step-free Si(001) and (111) Terraces during High Temperature Annealing O5.8
  Authors: Doohan Lee, and Jack M. Blakely


• Instabilities and Point Defects at Step-free Si(001) and (111) Terraces during High Temperature Annealing O5.8
  Authors: Doohan Lee, and Jack M. Blakely


• Effects of Sapphire Substrate Configurations on MBE Growth of ZnO O6.2
  Authors: Keiichiro Sakurai, Ken Nakahara, Tetsuhiro Tanabe, Shizuo Fujita, and Shigeo Fujita


• Faceting of Single-Crystal SrTiO3 during Wet Chemical Etching O6.4
  Authors: G.C. Spalding, W.L. Murphy, T.M. Davidsmeier, and J. E. Elenewski


• Temperature Effect on Vapor Phase Etching of Ground Silicon Substrate and Surface Morphology O6.7
  Authors: Yifei He, and Gregory Zakaluk


• Selective Area Growth of Magnetic Garnet Crystals by Liquid-Phase Epitaxy O6.9
  Authors: H. Yokoi, and T. Mizumoto


• Epitaxial Realignment of In-Situ Doped Polycrystalline Silicon for Advanced BiCMOS Technologies O6.10
  Authors: K. Chang, S.G. Thomas, T.C. Lee, R.B. Gregory, D. O'Meara, K. Noering, J. Kirchgnesser, G. Fresquet, J. Parker, and B. Tillack


• The Effect of Stress in the PdGe Mediated Solid Phase Epitaxial Growth of Ge on GaAs O6.11
  Authors: Fabian Radulescu, and John M. McCarthy


• MBE growth and ultrahigh temperature processing of high-quality AlN films O7.2
  Authors: Z.Y. Fan, G. Rong, N. Newman, David J. Smith, and D. Chandrasekhar


• The Use of AlN Interlayers to Improve GaN Growth on A-Plane Sapphire O7.3
  Authors: D.D. Koleske, M.E. Twigg, A.E. Wickenden, R.L. Henry, R.J. Gorman, J.A. Freitas Jr., and M. Fatemi


• Solid phase epitaxial recrystallization of AlN films on sapphire (0001): A novel substrate approach for GaN epitaxy O7.4
  Authors: R.D. Vispute, A. Patel, R.P. Sharma, T. Venkatesan, T. Zheleva, and K.A. Jones


• Structural and electrical characterization of Si-MODFET structures grown at high rates by LEPECVD O7.9
  Authors: C. Rosenblad, M. Kummer, E. Muller, A. Dommann, and H. VonKanel


• Ni-Induced Selective Nucleation and Solid Phase Epitaxy of Large-Grained Poly-Si on Glass O8.1
  Authors: Rosaria A. Puglisi, Hiroshi Tanabe, Claudine M. Chen, Harry A. Atwater, and Emanuele Rimini


• SOI Formation From Amorphous Silicon By Novel Grain Enhancement Method O8.2
  Authors: C.Y. Yuen, M.C. Poon, M. Chan, M. Qin, W.Y. Chan, S. Shivani, and P.K. Ko


• Strain Modification of Epitaxial SrRuO₃ Films Using Structural Transitions of Ferroelectric BaTiO Substrate O8.3
  Authors: M.K. Lee, T.K. Nath, C.B. Eom, M.C. Smoak, and F. Tsui


• SPM Characterization of Substrate Surfaces Prepared for Carbon-Related-Film Deposition O8.4
  Authors: Kazumasa Narumi, Shunya Yamamoto, and Hiroshi Naramoto


• Effect Of Electric Field On Metal Induced Lateral Crystallization Of Amorphous Silicon. O8.5
  Authors: Shivani Singla, M.C. Poon, M. Qin, W.Y. Chan, C.Y. Yuen, P.K. Ko, and H. Wong


• Porous SiC Substrate Materials for High-Quality Epitaxial and Bulk Growth O8.6
  Authors: M. Mynbaeva, N. Savkina, A. Zubrilov, N. Seredova, M. Scheglov, A. Titkov, A. Tregubova, A. Lebedev, A. Kryzhanovski, I. Kotousova, and V. Dmitriev