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Nanothick Layer Transfer of Hydrogen-implanted Wafer Using Polysilicon Sacrificial Layer

Author(s):
C. H. Huang, C. L. Chang, Y. Y. Yang, T. Suryasindhu, W. -C. Liao, Y. -H. Su, P. W. Li, C. -Y. Liu, C. S. Lai, J. -H. Ting, C. S. Chu, C, -S, Lee, T. -H. Lee

A fabrication method of 2-D nanostructure materials applied for forming nanothick SOI materials without using post-thinning processes is presented in this paper. The thickness of SOI layer is precisely controlled by a polysilicon layer as a sacrificial layer in the implantation step to acquire a desirable implant depth. Polysilicon layer was initially deposited on the thermal oxidized surface of silicon wafer prior to the ion implantation step with 4×1016 /cm-2, 160KeV, H2 + ions. The as-implanted wafer was contained a hydrogen-rich buried layer which depth from the top surface is less than 100 nm. Before this as-implanted wafer being bonded with a handle wafer, the polysilicon layer was removed by a wet etching method. A nanothick silicon layer was then successfully transferred onto a handle wafer under 10-minute microwave irradiation after the bonding step. The thickness of the final transferred silicon layer was 100 nm measured by transmission electron microscopy (TEM).

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Track ID:
Paper #: 0921-T05-02
DOI: