Materials Gateway
Resource Center
Login button
 Open/CloseSend Us Your Feedback

Computer simulations on the grain boundary grooving and cathode edge displacement in bamboo-like metalic interconnects

Author(s):
Tarik Omer Ogurtani, Oncu Akyildiz

The process of grain boundary (GB) grooving and cathode edge displacement in sandwich type thin film bamboo lines are simulated by introducing a new mathematical model. In the absence of the electric field, the computer studies on the triple junction kinetics show that it obeys the first order reaction kinetics at early transient stage, which is followed by the familiar time law as t^1/4, at the steady state regime. The applied electric field (EF) in constant current experiments modifies this time law drastically above the well-defined electron wind intensity (EWI) threshold, and puts an upper limit for the groove depth, which decreases monotonically with EWI. Below the threshold level, the capillary regime predominates, and EF has little effect on the general kinetics of GB grooving, other then the linear increase in total elapsed time with EWI.

Member Price: $0; Non-Member Price: $25.00
Track ID:
Paper #: 0914-F09-22
DOI: