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Ordering and shape tuning of Ge islands on metal-patterned Si

Author(s):
Jeremy T Robinson, Yifan Cao, Donald Walko, Dohn Arms, J Alexander Liddle, Oscar D Dubon

In semiconductor epitaxy, a central challenge for the formation of ordered arrays of nanostructures, such as quantum dot islands, is the realization of processing routes to control surface-mediated growth mechanisms with high spatial precision and reproducibility across macroscopic lengths. To this end we have recently demonstrated a simple route for the directed assembly of heteroepitaxial islands based on rudimentary metal patterning. Here we show that the same metal patterns on the silicon surface that lead to island ordering radically modify island morphology resulting in shapes such as nanorods and truncated pyramids that are set by the choices of metal species and substrate orientation. These effects reflect a remarkable combination of metal-mediated growth phenomena that may be exploited to tailor the functionality of island arrays.

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Track ID:
Paper #: 0958-L03-07
DOI: