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 November 2008 -- Whither Oxide Electronics?

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 July 2008 -- Commercialization of Organic Electronics

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• printer-friendly

Author(s):
X. R. Qin, A. Tersigni, J. Shi, D. T. Jiang

Scanning tunneling microscopy (STM), atomic force microscopy (AFM) and near-edge x-ray absorption fine structure (NEXAFS) have been used to study the structure of tetracene films on hydrogen-passivated Si(001). A distinct growth morphology change that occurs around a few monolayers of film thickness was characterized. This coverage-dependent film structural phase transition leads to a molecularly ordered film structure commensurate with the crystalline substrate.

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Paper #: 0965-S12-25
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