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• Spinodal Decomposition and Super-Paramagnetism in Dilute Magnetic Nitride Semiconductors 0955-I01-01
  Authors: Kazunori Sato, Tetsuya Fukushima, Hiroshi Katayama-Yoshida


• Spin-Orbit Coupling and Zero-Field Electron Spin Splitting in AlGaN/AlN/GaN Heterostructures with a Polarization Induced Two-Dimensional Electron Gas
  [Extended Abstract] 0955-I01-02
  Authors: Ç. Kurdak, N. Biyikli, H. Cheng, U. Ozgur, H. Morkoç, V. I. Litvinov


• Properties of Ferromagnetic GaGdN
  [Extended Abstract] 0955-I01-04
  Authors: J. K. Hite, R. P. Davies, R. M. Frazier, G. T. Thaler, C. R. Abernathy, S. J. Pearton, J. M. Zavada


• Gadolinium and Oxygen co-doping of Gallium Nitride: an LSDA + U study 0955-I01-05
  Authors: Walter R. L. Lambrecht, Paul Larson


• Fabrication of high-performance photodetector based on AlGaN/GaN hetero-field-effect transistors with p-GaN gate 0955-I02-02
  Authors: Shuichi Miura, Takahiro Fujii, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki


• Al rich AlN/AlGaN Quantum Wells 0955-I02-04
  Authors: Talal Mohammad Al tahtamouni, Neeraj Nepal, Jingyu Lin, Hongxing Jiang


• Strain-free Low-defect-density Bulk GaN with Nonpolar Orientations
  [Extended Abstract] 0955-I03-04
  Authors: Tanya Paskova, Plamen P. Paskov, Vanya Darakchieva, Roland Kroeger, Detlef Hommel, Bo Monemar, Sebastian Lourdudoss, Edward Preble, Andrew Hanser, Mark N. Williams, Michael Tutor


• Bulk AlN Crystal Growth on SiC Seeds and Defects Study 0955-I03-07
  Authors: P Lu, J H Edgar, C Cao, K Hohn, R Dalmau, R Schlesser, Z Sitar


• Fabrication and Characterization of 2-inch diameter AlN Single-Crystal Wafers cut From Bulk Crystals 0955-I03-08
  Authors: Robert T. Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter


• Details of the improvement of crystalline quality of a-plane GaN using one-step lateral growth 0955-I04-02
  Authors: Daisuke Iida, Tetsuya Nagai, Takeshi Kawashima, Aya Miura, Yoshizane Okadome, Yosuke Tsuchiya, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki


• High Temperature MOVPE Growth of Al_xGa_1-xN (0.2-1) Layers on Sapphire and SiC Substrates for the Fabrication Deep UV Optical Devices 0955-I04-03
  Authors: Balakrishnan Krishnan, Masataka Imura, Kazuyoshi Iida, Kentaro Nagamatsu, Hiroki Sugimura, Tetsuya Nagai, Takafumi Sumii, Fumiaki Mori, Akira Bandoh, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki


• Growth and characterization of semi-polar (11-22) GaN with in-situ SiN_x interlayers 0955-I04-05
  Authors: Jonathan Hollander, Clifford McAleese, Menno Kappers, Colin Humphreys


• Study of Defects in p-type Layers in III-nitride Laser Diode Structures Grown by Molecular Beam Epitaxy 0955-I04-07
  Authors: Huixin Xiu, Pedro MFJ Costa, Matthias Kauer, Tim M Smeeton, Stewart E Hooper, Jonathan Heffernan, Colin J Humphreys


• Ultraviolet light emitting diodes using non-polar A-plane AlGaN multiple quantum wells
  [Extended Abstract] 0955-I04-08
  Authors: Ramya Chandrasekaran, Anirban Bhattacharyya, Ryan France, Christos Thomidis, Adrian Williams, Theodore Moustakas


• Blue-green-red LEDs based on InGaN Quantum Dots by Plasma-assisted MBE using GaN QDs for Dislocation Filtering 0955-I05-05
  Authors: Tao Xu, Alexey Yu Nikiforov, Ryan France, Christos Thomidis, Adrian Williams, Theodore D. Moustakas, Lin Zhou, David J Smith


• Epitaxial Growth of ZrO₂ on GaN by MOMBE for High Dielectric Material Applications 0955-I06-01
  Authors: Xing Gu, Jinqiao Xie, Serguei Chevtchenko, Natalia Izyumskaya, Vataliy Avrutin, Hadis Morkoç


• Low-dislocation-density Nonpolar AlN Grown on 4H-SiC (11-20) Substrates
  [Extended Abstract] 0955-I06-03
  Authors: Jun Suda, Masahiro Horita, Tsunenobu Kimoto


• Optical Transmission Measurements on MOCVD Grown GaMnN Films on Sapphire 0955-I07-02
  Authors: Fevzi Erdem Arkun, Nadia A El-Masry, John Muth, Xiyao Zhang, Amr Mahrouse, John Zavada, Salah M Bedair


• Comparison of the Incorporation of Various Transition Metals into GaN by MOCVD
  [Extended Abstract] 0955-I07-04
  Authors: Matthew H Kane, William Fenwick, Nola Li, Shalini Gupta, Eun Hyun Park, Ian T Ferguson


• Electrical Characterization of GaN Based Ultraviolet and Blue Light Emitting Diodes 0955-I07-05
  Authors: Alphonse-Marie Kamto Tegueu, Okechukwu Akpa, Arindra Guha, Kalyankumar Das


• Recombination dynamics in ultraviolet light-emitting diodes with Si-doped Al_xGa_1-xN/Al_yGa_1-yN multiple quantum well active regions 0955-I07-07
  Authors: K. X. Chen, Y. A. Xi, F. W. Mont, J. K. Kim, E. F. Schubert, X. Li, W. Liu, J. A. Smart


• Wet Etching of Bulk AlN Crystals 0955-I07-10
  Authors: Dejin Zhuang, Ziad G. Herro, Xianglin Li, Raoul Schlesser, Zlatko Sitar


• Titanium Nitride Epitaxy on Tungsten (100) by Sublimation Crystal Growth 0955-I07-11
  Authors: Lisa Mercurio, James H. Edgar, Li Du, E. A. Kenik


• Selective Area Growth of GaN Nano Islands by Metal Organic Chemical Vapor Deposition: Experiments and Computer Simulations 0955-I07-14
  Authors: Anilkumar Chandolu, Gela D Kipshidze, Sergey A Nikishin, Lu Tian, Song Daoying, Mark Holtz, Anya Lobanova


• Influence of Growth Conditions on Phase Separation of InGaN Bulk Material Grown by MOCVD
  [Extended Abstract] 0955-I07-20
  Authors: Yong Huang, Omkar Jani, Eun Hyun Park, Ian Ferguson


• Compound-source Molecular Beam Epitaxy of GaN on Si at Low Temperature Using GaN Powder and Ammonia as Sources 0955-I07-23
  Authors: Tohru Honda, Masaru Sawada, Hiromi Yamamoto, Masashi Sawadaishi


• The Structural and Optical Properties of Self-assembled InGaN/GaN Quantum Dots Grown by Molecular Beam Epitaxy 0955-I07-28
  Authors: Tim M Smeeton, Mathieu Sénès, Katherine L Smith, Stewart E Hooper, Jon Heffernan


• Growth and Polarity Control of GaN and AlN on Carbon-face SiC by Metalorganic Vapor Phase Epitaxy
  [Extended Abstract] 0955-I07-37
  Authors: Yi Fu, Xianfeng Ni, Jingqiao Xie, N Biyikli, Qian Fan, S Chevtchenko, Ü Özgür, Hadis Morkoç, You Ke, Robert Devaty, W. J. Choyke, C. K. Inoki, T. S. Kuan


• Electronic Properties and Stability of Artificial In-N Molecules 0955-I07-39
  Authors: Liudmila A Pozhar, William C Mitchel


• Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE 0955-I07-40
  Authors: Taihei Yamaguchi, Tsutomu Araki, Hiroyuki Naoi, Yasushi Nanishi


• Defects in Electron and Neutron Irradiated n-GaN: Disordered Regions Versus Point Defects
  [Extended Abstract] 0955-I07-46
  Authors: Alexander Y Polyakov, Nikolai B Smirnov, Anatoliy V Govorkov, Alexander V Markov, Cheul-Ro Lee, In-Hwan Lee, Nikolai G Kolin, Denis I Merkurisov, Vladimir M Boiko, James S Wright, Stephen J Pearton


• Deep centers in GaN layers grown on epitaxial lateral overgrowth templates by metalorganic chemical vapor deposition 0955-I07-48
  Authors: S. A. Chevtchenko, J. Xie, Y. Fu, X. Ni, H. Morkoç


• Investigation of Low Angle Grain Boundaries in Hexagonal Silicon Carbide 0955-I07-50
  Authors: Yi Chen, Hui Chen, Ning Zhang, Michael Dudley, Ronghui Ma


• Defect reduction in (11-20) a-plane GaN by two-step epitaxial lateral overgrowth
  [Extended Abstract] 0955-I07-51
  Authors: X. Ni, Ü. Özgür, Y. Fu, N. Biyikli, H. Morkoç, Z. Liliental-Weber


• Electroluminescence from Single 3D GaN Nanowire Grown by Self-Catalytic Molecular Beam Epitaxy 0955-I07-52
  Authors: C. E. Kendrick, R. Tilley, M. Kobayashi, R. J. Reeves, S. M. Durbin


• Mg-doped N-polar InN Grown by RF-MBE 0955-I08-01
  Authors: Daisuke Muto, Hiroyuki Naoi, Shinya Takado, Hyunseok Na, Tsutomu Araki, Yasushi Nanishi


• MBE Growth of Cubic InN
  [Extended Abstract] 0955-I08-03
  Authors: Jörg Schörmann, Donat Josef As, Klaus Lischka


• Properties of InN layers grown by High Pressure CVD 0955-I08-04
  Authors: Mustafa Alevli, Goksel Durkaya, Ronny Kirste, Aruna Weesekara, Unil Perera, William Fenwick, Vincent Woods, Ian T. Ferguson, Axel Hoffmann, Nikolaus Dietz


• Photoluminescence, Capacitance-Voltage, and Variable Field Hall Effect Measurements of Mg-Doped InN
  [Extended Abstract] 0955-I08-06
  Authors: Craig H. Swartz, Steven M. Durbin, Roger J. Reeves, Katherine Prince, John V. Kennedy, Sandeep Chandril, Thomas H. Myers, Damian Carder


• High Resolution Transmission Electron Microscopy Study of Thermal Oxidation of Single Crystalline Aluminum Nitride
  [Extended Abstract] 0955-I09-01
  Authors: Jharna Chaudhuri, Rac Gyu Lee, Luke Owuor Nyakiti, Zheng Gu, James H Edgar, Peng Li


• Experimental Analysis of the Spontaneous Polarization Field in GaN by UHV-cathodoluminescence
  [Extended Abstract] 0955-I09-04
  Authors: Martina Finke, Daniel Fuhrmann, Uwe Rossow, Andreas Hangleiter


• Characterization of Non-Polar Surfaces in HVPE Grown Gallium Nitride 0955-I09-05
  Authors: Kun-Yu (Alvin) Lai, Judith A. Grenko, V. D. Wheeler, Mark Johnson, E. A. Preble, N. Mark Williams, A. D. Hanser


• Photoluminescence from Gd-implanted AlN and GaN Epilayers
  [Extended Abstract] 0955-I10-02
  Authors: John M Zavada, Neeraj Nepal, J. Lin, K. H. Kim, H. X. Jiang, J. Hite, G. T. Thaler, R. M. Frazier, C. R. Abernathy, S. J. Pearton


• Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition 0955-I10-05
  Authors: C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, J. M. Zavada


• Preparation of High Conductive Cubic Boron Nitride Thin Films by in-situ zinc Doping
  [Extended Abstract] 0955-I11-01
  Authors: Kenji Nose, Toyonobu Yoshida


• A Study of Defects and Surface Properties in AlGaN/GaN High Electron Mobility Transistors (HEMTs) Grown by MOCVD on Semi-Insulating SiC Substrates 0955-I11-02
  Authors: Yongkun Sin, Hyun I Kim, Paul Adams, Gary Stupian


• Structural Defects in Laterally Overgrown GaN Layers Grown on Non-polar Substrates
  [Extended Abstract] 0955-I11-04
  Authors: Zuzanna Liliental-Weber, X. Ni, H. Morkoc


• Thermodynamic Analysis of Impurities in the Sublimation Growth of AlN Single Crystals 0955-I11-05
  Authors: Li Du, James H Edgar


• Design and Optimization of GaN-based Semiconductor Saturable Absorber Mirror Operating at Around 415 nm 0955-I12-01
  Authors: Fen LIN, Ning XIANG, Xin Cai WANG, Jesudoss AROKIARAJ, Wei LIU, Hong Fei LIU, Soo Jin CHUA


• Piezoelectric Fields in Tilted GaInN Quantum Wells
  [Extended Abstract] 0955-I12-02
  Authors: Martin Feneberg, Frank Lipski, Rolf Sauer, Klaus Thonke, Thomas Wunderer, Peter Brückner, Ferdinand Scholz


• Optical Properties of Undoped, n-Doped and p-Doped GaN/AlN Superlattices
  [Extended Abstract] 0955-I12-03
  Authors: Plamen Paskov, Bo Monemar, Satoshi Kamyiama, Hiroshi Amano, Isamu Akasaki


• Investigation of the Optical Properties of epitaxial-lateral-overgrown GaN on R- and M- plane Sapphire
  [Extended Abstract] 0955-I12-04
  Authors: Tobias Guhne, Zahia Bougrioua, Martin Albrecht, Phillippe Vennéguès, Mathieu Leroux, Marguerite Laügt, Sosse Ndiaye, Monique Teisseire, Luan Nguyen, Pierre Gibart


• Optical Properties of Nearly Lattice-matched AlInN/GaN Single Quantum Wells with Varying Well-widths
  [Extended Abstract] 0955-I12-06
  Authors: Lay-Theng Tan, Robert W Martin, Ian M Watson, Kevin P O'Donnell


• Localisation of Excitation in InGaN Epilayers and Quantum wells
  [Extended Abstract] 0955-I12-07
  Authors: Kevin Peter O'Donnell


• Phonon Decay in GaN and AlN and Self-Heating in III-N Devices 0955-I12-11
  Authors: M. Holtz, D. Y. Song, S. A. Nikishin, V. Soukhoveev, A. Usikov, V. Dmitriev, E. Mokhov, U. Makarov, H. Helava


• 1.37 - 2.90 Micron Intersubband Transitions in GaN/AlN Superlattices 0955-I13-01
  Authors: Eric Anthony DeCuir, Jr., Emil Fred, Omar Manasreh, Jinqiao Xie, Hadis Morkoc, Esther Baumann, Daniel Hofstetter


• Nanoparticle-loaded encapsulation materials for light-emitting diode applications 0955-I13-02
  Authors: F. W. Mont, H. Luo, M. F. Schubert, J. K. Kim, E. F. Schubert, R. W. Siegel


• Ultrathin AlN/GaN Heterojunctions by MBE for THz Applications
  [Extended Abstract] 0955-I13-05
  Authors: Yu Cao, Debdeep Jena


• The Influence of Device Structure on High-electric-field Effects and Reliability of AlGaN/GaN HFETs 0955-I14-01
  Authors: Weiwei Kuang, Robert J Trew, Griff L Bilbro, Yueying Liu


• AlGaN/GaN-sensors for Monitoring of Enzyme Activity by pH-Measurements
  [Extended Abstract] 0955-I14-03
  Authors: Gabriel Kittler, Armin Spitznas, Benedikt Luebbers, Vadim Lebedev, Dennis Wegener, Michael Gebinoga, Frank Weise, Andreas Schober, Oliver Ambacher


• Electrical Detection of Deoxyribonucleic Acid Hybridization With AlGaN/GaN High Electron Mobility Transistors 0955-I14-06
  Authors: B. S. Kang, S. J. Pearton, J. J. Chen, F. Ren, J. W. Johnson, R. J. Therrien, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum


• Magnetic and Optical Properties of Eu-doped GaN
  [Extended Abstract] 0955-I15-01
  Authors: Jennifer Hite, G T Thaler, J H Park, A J Steckl, C R Abernathy, J M Zavada, Stephen Pearton


• Evaluation on Crystal and Optical Properties of AlN:Er Prepared by RF magnetron sputtering method 0955-I15-03
  Authors: Shin-ichiro Uekusa, Takahiko Ohno, Tomoyuki Arai, Hiroshi Miura


• Comparison between the Photoluminescence Mappings Under Selective and Non-selective Excitation and the Electroluminescence Mappings of the Epitaxial Wafers with InGaN-LED Structure 0955-I15-05
  Authors: Kazuyuki Tadatomo, Osamu Shimoike, Hiromichi Noda, Masahiro Hiraoka, Kazumasa Yoshimura, Katsuyuki Hoshino


• Resonant Energy Transfer due to Exciton Coupling in Hybrid Persovskites Conjugated to GaN Semiconductors
  [Extended Abstract] 0955-I15-07
  Authors: Jianyou Li, Arup Neogi, Teruya Ishihara


• Effects of Surface Treatments on Optical Properties of GaN 0955-I15-08
  Authors: Gakuyo Fujimoto, Katsushi Fujii, Tsutomu Minegishi, Hiroki Goto, Takenari Goto, Takafumi Yao


• Electrical Properties, Deep Levels Spectra and Luminescence of Undoped GaN/InGaN Multi-quantum-well Structures as Affected by Electron Irradiation
  [Extended Abstract] 0955-I15-11
  Authors: Alexander Y Polyakov, Nikolai B Smirnov, Anatoliy V Govorkov, Alexander V Markov, Cheul-Ro Lee, In-Hwan Lee, Nikolai G Kolin, Denis I Merkurisov, Vladimir M Boiko, James S Wright


• Loss of Quantum Efficiency in Green Light Emitting Diode Dies at Low Temperature 0955-I15-12
  Authors: Yufeng Li, Wei Zhao, Yong Xia, Mingwei Zhu, Jayantha Senawiratne, Theeradetch Detchprohm, E. Fred Schubert, Christian M Wetzel


• ESTIMATION OF JUNCTION TEMPERATURE IN OPERATING LIGHT EMITTING DIODES
  [Extended Abstract] 0955-I15-13
  Authors: Md. Shahrukh Sakhawat, Arindra N Guha, Okechukwu Akpa, Ping Z Hagler, Dake Wang, Minseo Park, Kalyankumar Das


• 500 K operation AlGaN/GaN HFETs with a large current and a high breakdown voltage 0955-I15-20
  Authors: Hiroshi Kambayashi, Jiang Li, Nariaki Ikeda, Seikoh Yoshida


• Ion-Implanted GaN/AlGaN/GaN HEMTs with Extremely Low Gate Leakage Current 0955-I15-22
  Authors: Kazuki Nomoto, Taku Tajima, Tomoyoshi Mishima, Masataka Satoh, Tohru Nakamura


• Low-voltage Avalanche Breakdown in AlGaN Multi-quantum Wells
  [Extended Abstract] 0955-I15-23
  Authors: Shengkun Zhang, X. Zhou, Wubao Wang, R. R. Alfano, A. M. Dabiran, A. Osinky, A. M. Wowchak, B. Hertog, C. Plaut, P. P. Chow


• Influence of Overheating Effect on Transport Properties of AlGaN/GaN Heterostructures 0955-I15-27
  Authors: Andriy Kurakin, Svetlana Vitusevich, Mykhailo Petrychuk, Hilde Hardtdegen, Serhiy Danylyuk, Alexander Belyaev, Norbert Klein


• Persistent Photoconductivity in High-mobility Al_xGa_1-xN/AlN/GaN Heterostructures Grown by Metal-organic Vapor-phase Epitaxy
  [Extended Abstract] 0955-I15-28
  Authors: Necmi Biyikli, Umit Ozgur, Xianfeng Ni, Yi Fu, Hadis Morkoc, Cagliyan Kurdak


• Traps in Si-doped AlxGa1-xN Grown by Molecular Beam Epitaxy on Sapphire Characterized by Deep Level Transient Spectroscopy 0955-I15-30
  Authors: Mo Ahoujja, S Elhamri, M Hogsed, Y. K. Yeo, R. L. Hengehold


• Investigation of Electrical Properties in Si Ion Implanted GaN Layer as A Function of Dose and Energy
  [Extended Abstract] 0955-I15-31
  Authors: Masataka Satoh, T Saitoh, K Nomoto, T Nakamura


• Schottky I-V Characteristics of Au/Ni/GaN/SiNx Nanonework/Sapphire Structures
  [Extended Abstract] 0955-I15-34
  Authors: Jinqiao Xie, Yi Fu, Hadis Morkoc, Jinqiao xie, Jinqiao xie


• Development of Aluminum Nitride/Platinum Stack Structures for an Enhanced Piezoelectric Response
  [Extended Abstract] 0955-I15-35
  Authors: Adam Kabulski, John Harman, Parviz Famouri, Dimitris Korakakis


• Electroreflectance Spectra of InGaN/AlGaN/GaN p-n-Heterostructures
  [Extended Abstract] 0955-I15-36
  Authors: Alexander E. Yunovich, Lev Avakyants, Mansur Badgutdinov, Pavel Bokov, Anatoly Chervyakov, Stanislav Shirokov, Elena Vasileva, Anatoly Feopentov, Fedor Snegov, Dmitry Bauman, Boris Yavich


• Characterization of GaN/Si Using Capacitance Spectroscopies
  [Extended Abstract] 0955-I15-38
  Authors: Steven R. Smith, John C. Roberts, P. Rajagopal, J. W. Cook, E. L. Piner, K. J. Linthicum, Said Elhamri


• Vertically Increasing Well Thickness and In Content in GaInN MQW's due to V-shaped Pits
  [Extended Abstract] 0955-I15-39
  Authors: H. Bremers, L. Hoffmann, D. Fuhrmann, U. Rossow, A. Hangleiter


• Low-Temperature Cathodoluminescence Mapping of Green, Blue, and UV GaInN/GaN LED Dies 0955-I15-45
  Authors: Yong Xia, Theeradetch Detchprohm, Jayantha Senawiratne, Yufeng Li, Wei Zhao, Mingwei Zhu, Christian Wetzel


• Recessed Gate Processing for GaN/AlGaN-HEMTs,
  [Extended Abstract] 0955-I15-49
  Authors: Wilfried Pletschen, Rudolf Kiefer, Brian Raynor, Stefan Mueller, Foud Benkhelifa, Ruediger Quay, Michael Mikulla, Michael Schlechtweg, Guenter Weimann


• GaAsN Thin Film Growth by Chemical Beam Epitaxy with Source Gas Flow Rate Modulation 0955-I15-51
  Authors: Yoshio Ohshita, Kenji Saito, Kenichi Nishimura, Toshihide Suzuki, Masafumi Yamaguchi


• Investigation of Optical Properties of Nitrogen Incorporated Sb based Quantum Well and Quantum Dots for Infrared Sensors Application 0955-I15-52
  Authors: Seongsin M Kim, Homan B Yuen, Fariba Hatami, Akihiro Moto, Alan Chin, James S Harris


• AlGaN/GaN High Electron Mobility Transistors on Si/SiO2/poly-SiC Substrates 0955-I16-02
  Authors: Travis Anderson, Fan Ren, Lars Voss, Mark Hlad, Brent P Gila, Stephen Pearton, Lance Covert, Jenshan Lin, Julien Thuret, H Lahreche, P Bove


• Fully Unstrained GaN on Thick AlN Layers for MEMS Application 0955-I16-03
  Authors: Katja Tonisch, Florentina Niebelschuetz, Volker Cimalla, Henry Romanus, Oliver Ambacher


• Investigation of The Electrical and Chemical Properties of Plasma-Treated AlGaN 0955-I16-04
  Authors: X. A. Cao, H. Piao, S. F. LeBoeuf, J. Y. Lin, H. X. Jiang


• Fabrication of AlGaN/GaN HFET with a High Breakdown Voltage on 4-inch Si (111) Substrate by MOVPE 0955-I16-06
  Authors: Yuki Niiyama, Sadahiro Kato, Yoshihiro Sato, Masayuki Iwami, Jiang Li, Hironari Takehara, Hiroshi Kambayashi, Nariaki Ikeda, Seikoh Yoshida