Symposium BB: Materials for End-of-Roadmap Devices in Logic, Power and Memory

The scaling of silicon MOSFETs, DRAM and Flash memory has already required the use for high-k dielectrics, and the trend to higher gate capacitance densities is expected to continue. Present Si MOSFETs employ high-k dielectrics, metal gates and strain-engineered layers. Further progress requires new materials and new device structures. For future MOSFET logic devices and power MOSFETs, novel channel materials such as III-V, Ge, GaN and graphene are being investigated. Future nonvolatile memory includes resistive memory and 3D Flash. This symposium will emphasize not only the advances in materials and mechanisms but also the new device structures that are required for the new materials to provide substantial improvements in device performance.

Topics will include:

  • High-conductivity sources and drains for future MOSFETS
  • High-k dielectrics and metal gates for SiGe, Ge, III-V, GaN and SiC
  • Gate-stack materials and interfaces for future MOSFETs and memory
  • Measurement and modeling of band offsets, dielectric behavior and work-function control
  • Modeling of the physics and chemistry of defects in dielectrics
  • Device structures and materials SiGe, Ge, III-Vs, GaN and SiC
  • Unconventional transistor designs including tunnel FETS, 3D transistors and 3D memory
  • High-k dielectrics for Flash and DRAM memories
  • Novel oxides for resistive RAM
  • Switching mechanism in RRAM and modeling
  • Surface pretreatments and cleaning of non-Si-channel materials
  • Electrical reliability of nanoscale devices and its modeling

Invited speakers include:

Gennadi Bersuker (Sematech), Randall Feenstra (Carnegie Mellon Univ.), Max Fischetti (Univ. of Texas at Dallas), Roy Gordon (Harvard Univ.), Marc Heyns (IMEC, Belgium), Paul Hurley (Tyndall National Inst., Ireland), Umesh Mishra (Univ. of California, Santa Barbara), S. Miyazaki (Nagoya Univ., Japan), Robert Nemanich (Arizona State Univ.), Mark Rodwell (Univ. of California, Santa Barbara), Sayeef Salahhudin (Univ. of California, Berkeley), Eric Vogel (Georgia Inst. of Technology), H.-S. Philip Wong (Stanford Univ.).

Symposium Organizers

John Robertson
Cambridge University
Dept. of Engineering
9 JJ Thomson Ave.
Cambridge CB3 0FA, United Kingdom
Tel 44-1223-748331, Fax 44-1223-748348
jr@eng.cam.ac.uk

Andrew C. Kummel
University of California, San Diego
Dept. of Chemistry 0358
9500 Gilman Dr.
La Jolla, CA 92093-0358
Tel 858-534-3368, Fax 858-534-2063
akummel@ucsd.edu

Paul C. McIntyre
Stanford University
Dept. of Materials Science and Engineering
476 Lomita Mall
Stanford, CA 94305-4045
Tel 650-725-9806, Fax 650-725-4034
pcm1@stanford.edu

Masaaki Niwa
Tohoku University
Center for Innovative Integrated Electronic Systems
6-6-05 Aramaki aza aoba
Sendai 980-8579, Japan
Tel 81-22-795-5758
niwa.masaaki@cies.tohoku.ac.jp

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