Accepting New Late Breaking Abstracts
December 1, 2017—January 11, 2018 (11:59 pm ET)
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Symposium EP01—Materials for Beyond the Roadmap Devices in Logic, Memory and Power
The continued scaling of silicon MOSFETs for logic, and of DRAM and Flash memories has already required the use for finFETS, high-k dielectrics and SiGe stressors. There is presently active research on new device concepts such as tunnel FETs, negative capacitance gate FETs and spin torque devices. Further progress requires new materials. For future MOSFET logic devices, novel channel materials such as SiGe, Ge and III-V semiconductors are being developed. Broken-gap semiconductor heterostructures, and 2-dimensional semiconductors such as the transition metal dichalcogenides (TMDs), and CMOS compatible ferroelectrics based on HfO2 and ZrO2 are under development. Future non-volatile memory includes phase change memories and resistive random access memories. This symposium will emphasize not only the advances in materials but also the new device structures that are required for the new materials to provide substantial improvements in device performance.