2018 MRS Spring Meeting

Call for Papers

Accepting New Late Breaking Abstracts
December 1, 2017—January 11, 2018 (11:59 pm ET)


Submit an Abstract

Symposium EP07—Phase-Change Materials and Their ApplicationsMemories, Photonics, Displays and Non-von Neumann Computing

Phase change materials, thanks to their remarkable properties, are interesting candidates for emerging applications in memories, photonics, displays, ovonic threshold switch selectors and non-von Neumann computing. Distinct optical and electrical properties can be obtained by rapid switching between different structural phases, by employing sub-nanosecond laser or electric pulses and involving nanoscale volumes of phase change materials. Typical phase change materials are chalcogenide alloys, containing Te, Se or S, but other non-chalcogenide compositions, such as GaSb or VO2 also exhibit reversible phase transitions, with high contrast in macroscopic properties, depending on the structural phase.

The successfull employment of phase change materials in a broad range of applications, however, implies the overcoming of a number of challenges, such as device integration issues, novel device architectures, increase in the storage density, multilevel data storage and reliability issues. Solutions require technological advances, materials engineering, for example by strain, interfaces or doping optimization, but also a deeper understanding of the fundamental material physics and of the mechanisms determining the peculiar properties of phase change materials..

This symposium will cover advances in devices for optical and electronic applications as well as in materials science. It will bring together the technological and scientific communities, being of interest to electronics and process engineers, physicists, chemists and materials scientists working on emerging electronics, including novel nanoscale integration with 2D materials, nanophotonics and plasmonics. The symposium is designed to be a synergistic event that allows exchange of novel ideas and knowledge-base to propel progress in this important scientific field.

Topics will include:

  • Physics and materials science of phase change materials
  • Application of phase change materials to PCRAM devices and optical storage
  • Phase change materials for reconfigurable logic applications
  • Phase-change materials in photonic memories and displays
  • Biology-inspired / neuromorphic devices
  • Theory and Computer simulations of structural and electronic processes in phase change materials
  • Optical and thermal properties of phase change materials
  • Device integration and performance
  • Processing issues in device fabrication
  • Scalability of phase-change material applications
  • Multi-level storage
  • Concepts and enabling technologies for 3D memory, OTS devices
  • Integration of phase-change materials into hybrid nanostructures
  • Reduced dimensionality structures of phase-change materials
  • Layered and superlattice phase-change materials
  • Topological insulating properties of phase-change materials
  • A tutorial complementing this symposium is tentatively planned.

Invited Speakers:

  • Huai Yu Cheng (Macronix, IBM, USA)
  • Jeujun Hu (Massachusset Institute of Technology, USA)
  • Helene Plank (University of Regensburg, Germany)
  • Mina Rais-Zadeh (University of Michigan, USA)
  • Andrea Redaelli (Micron, Italy)
  • Carlos Ríos (University of Oxford, United Kingdom)
  • Yuta Saito (National Institute of Advanced Industrial Science and Technology, Japan)
  • Abu Sebastian (IBM, Zurich, Switzerland)
  • Yuji Sutou (Tohoku University, Japan)
  • Simon Wall (ICFO, Spain)
  • Junqiao Wu (University of California, Berkeley, USA)
  • Matthias Wuttig (RWTH, Aachen University, Germany)
  • Eugenio Zallo (PDI Berlin, Germany)
  • Wei Zhang (Oakland University, USA)
  • Rong Zhao (Singapore University of Technology and Design, Singapore)

Symposium Organizers

Kotaro Makino
National Institute of Advanced Industrial Science and Technology
Nanomaterials Research Institute
Japan
81298612311, k-makino@aist.go.jp

Harish Bhaskaran
University of Oxford
Department of Materials
United Kingdom

Stefania Privitera
Institute for Microelectronics and Microsystems (IMM)
National Research Council (CNR)
Italy

Véronique Sousa
CEA-LETI
France

Keywords for Abstract Submission

Chalcogenide superlattice, Chalcogenide topological insulator, Multi-level storage, Neuromorphic device, Phase change material, Phase change memory, Photonic memory and display