Unlike conventional semiconductors, metal oxides have a greater ionicity in their bond and exhibit orbital freedom for the oxygen ions in the lattice. In addition, oxides display a strong interplay between the electron, spin, orbital and structural degrees of freedom. Consequently, many functional properties such as ferroelectricity, piezoelectricity, thermoelectricity, ferromagnetism, and superconductivity feature much more prominently in these systems than they do in conventional semiconductors.
Recent advances in atomic-scale oxide thin film growth have enabled layer-by-layer design of oxide heterostructures, providing an unprecedented control of their physical properties which offer potential solutions to the fundamental limits of scalability of conventional semiconductor technology. These capabilities are based on operating principles that are confined to shorter length scales as well as the broad range of functionality offered by complex oxide materials. New physical properties and behavior that are absent in bulk can be engineered. Examples include high-mobility two-dimensional electron gases and interface magnetism/superconductivity. Moreover, an increasing number of experiments has shown that it is possible to tune the emergent properties through the precise control of boundary conditions in the heterostructures such as strain, chemical composition, crystallographic symmetry, electric field effects, interfacial proximity, surface decoration, capping layers etc. For example, many energy-harvesting and storage devices composed of oxides are designed to utilize energy quanta (i.e., electrons, ions, photons, phonons) by electrostatic, chemical, optical, or mechanical means through interfacing with dissimilar materials.
This symposium aims to provide a multidisciplinary forum with the participation of scientists and engineers from various backgrounds in order to promote the discussion on advanced oxides and interfaces and their implementation in energy, information storage, and future advanced technology.