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Call for Papers

Symposium ED7—Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power

The scaling of silicon MOSFETs, DRAM, and Flash memory has already required the use for finFETS, high-k dielectrics and SiGe stressors and there is active research in tunnelFETs. Further progress requires new materials and new device design engineering. For future MOSFET logic devices and power MOSFETs, novel channel materials such as broken-gap semiconductor heterostructures, transition metal dichalcogenides (TMD), and related materials are being investigated along with novel gates such as ferroelectrics and spin-based materials. Future non-volatile memory includes phase change memory with multistate gates, ferroelectrics, and 3D structures. This symposium will emphasize not only the advances in materials but also the new device structures that are required for the new materials to provide substantial improvements in device performance.

Topics will include:

  • High conductivity sources and drains for future MOSFETS
  • Electrical reliability of nanoscale devices and its modeling
  • Materials and mechanisms of Resistive RAM
  • Fabrication techniques for three dimensional devices
  • Negative capacitance and ferroelectric materials and devices
  • Unconventional transistors, switch/memory designs including tunnel FETs, TMD heterostructure FETs, spinFETS, 3D transistors
  • High-k dielectrics, oxide stacks, and metal gates for SiGe, Ge, III-V, GaN, TMD, graphene, DRAM and flash memory
  • Engineering of band offsets, dielectric behavior, and work function control
  • Gate-stack materials and interfaces for future switches and memory
  • Integration techniques for low dimensional materials into 3D devices
  • Surface pretreatments and cleaning of non-Si channel materials

Invited Speakers:

  • Kaustav Banerjee (University of California, Santa Barbara, USA)
  • Robert Clark (TEL, USA)
  • Lukas Czornomaz (IBM, Switzerland)
  • Suman Datta (University of Notre Dame, USA)
  • Ali Javey (University of California, Berkeley, USA)
  • Andreas Kerber (Global Foundaries, USA)
  • Min-Hung Lee (National Taiwan Normal University, Taiwan)
  • Chee Wee Liu (National Taiwan University, Taiwan)
  • Takahiro Mori (National Institute of Advanced Industrial Science and Technology, Japan)
  • Seongjun Park (Samsung, Republic of Korea)
  • Marko Radosavljevic (Intel, USA)
  • Josh Robinson (The Pennsylvania State University, USA)
  • Uwe Schroeder (Dresden University of Technology, Germany)
  • Michelle Simmons (Australia National University, USA)
  • Mitsuru Takenaka (Tokyo University, Japan)
  • Robert Wallace (University of Texas at Dallas, USA)
  • Dirk Wouters (Aachen University, Germany)
  • Grace Xing (Cornell University, USA)

Symposium Organizers

Andrew Kummel
University of California, San Diego
Chemistry and Biochemistry
USA
858-534-3368, akummel@ucsd.edu

Alexander Demkov
University of Texas at Austin
Department of Physics
USA

John Robertson
University of Cambridge
Engineering
United Kingdom
01223-748331, jr214@cam.ac.uk

Shinichi Takagi
The University of Tokyo
Department of Electrical Engineering and Information Systems, School of Engineering
Japan