Advances in conventional interconnect technology have been slowed in recent years due to the struggle with ultra-low k ILD integration and the challenges of continued metal barrier scaling. However, novel patterning and integration schemes have shown the need for a variety of new metal and dielectric materials that are either fillable, highly conformal, or selectively deposited. These new demands require advances in surface engineering, precursor development, and process technology for material deposition and cure. This symposium will focus on both continued advances in conventional interconnect technology and emerging areas. Topics will include advances in ILD materials and integration, novel etch stop and hardmask materials, fillable dielectrics, advanced metallization materials and processes, selective deposition and the use of BEOL materials to build novel switches and non-volatile memory devices.