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Call for Papers

Symposium ES10—Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects

Transition metal alloys and, more recently, heavy elemental (4d and 5d) metals have become the strategic elements of spintronic devices and applications. With the recent progress in fabrication and characterization techniques, complex oxide thin films have taken major roles in the frontiers of device physics and engineering. The complex oxides have offered an extremely wide range of properties not realized in conventional metals or semiconductors. For instance, they can exhibit a ferroelectric polar state, magnetic order, metal-insulator transition, colossal magnetoresistance and (predicted) topological insulator phases. In some cases, these properties or order parameters can coexist in single-phase materials, an example being multiferroics: ferroelectric, insulating magnets (anti-ferromagnets).

Due to their correlated nature and multiple degrees of freedom, the properties of this class of materials can be controlled by chemical substitution or by external stimuli such as electric, magnetic and strain fields. Furthermore, spin-orbit effects are the fundamental ingredients, which control magnetoelectric coupling in multiferroics and magnetotransport or magneto-optical effects in spin-Hall or topological insulators. In reduced dimensions, surface phenomena can dominate over bulk and thus become a key tuning parameter. Therefore, heterointerface engineering of complex oxides offers the possibility of the emergence of non-bulk-like exotic phenomena, which could improve or add novel functionalities to spintronics applications. This symposium will focus on the interdisciplinary topics related to the physics, materials science and engineering within the field of spintronics at oxide interfaces.

The topical list for this symposium reflects the materials needs and challenges within the field, with emphasis on the fabrication of thin films and heterostructures, properties, devices, and exploratory materials. Invited speakers will span the breadth of these interdisciplinary topics in order to accelerate the understanding and development of these topics to enable new functionalities in spintronics devices by exploiting the rich physics of complex oxides.

Topics will include:

  • Growth of functional oxide materials and heterostructures
  • Magnetic oxides, multiferroics and magnetoelectrics
  • Spin-orbit effects in oxides and heterostructures
  • Materials integration: Applications and devices
  • Theory and modeling of magnetoelectric behavior and manifestations of the spin-orbit interaction on magnetic/electronic structure
  • Electric field control of magnetism, spin torques, and (spin, quantum) Hall effects

Invited Speakers:

  • Elke Arenholz (Advanced Light Source, Lawrence Berkeley National Laboratory, USA)
  • Agnes Barthelemy (CNRS-Thales, France)
  • Manuel Bibes (CNRS-Thales, France)
  • Jingsheng Chen (National University of Singapore, Singapore)
  • Sebastiaan Van Dijken (Aalto University, Finland)
  • Kathrin Dorr (Martin Luther University Halle-Wittenberg, Germany)
  • Craig Fennie (Cornell University, USA)
  • Pietro Gambardella (ETH Zurich, Switzerland)
  • Marta Gibert (University of Geneva, Switzerland)
  • Venkatraman Gopalan (The Pennsylvania State University, USA)
  • Mark Huijben (University of Twente, Netherlands)
  • Tomas Jungwirth (University of Nottingham, United Kingdom)
  • Masashi Kawasaki (University of Tokyo, Japan)
  • Julia Mundy (University California, Berkeley, USA)
  • Ce-Wen Nan (Tsinghua University, China)
  • Tae-Won Noh (Seoul National University, Republic of Korea)
  • Caroline Ross (Massachusetts Institute of Technology, USA)
  • Sayeef Salahuddin (University California, Berkeley, USA)
  • Yuri Suzuki (Stanford University, USA)
  • Ken-ichi Uchida (Tohoku University, Japan)
  • Maria Varela (Universidad Complutense de Madrid, Spain)
  • Xiangang Wan (Nanjing University, China)
  • Di Xiao (Carnegie Mellon University, USA)
  • Fengyuan Yang (The Ohio State University, USA)

Symposium Organizers

John Heron
University of Michigan
Materials Science and Engineering
USA
734-763-6914, jtheron@umich.edu

Satoshi Okamoto
Oak Ridge National Laboratory
Materials Science and Technology Division
USA
865-576-1317, okapon@ornl.gov

Morgan Trassin
ETH Zurich
Materials Department
Switzerland

Pu Yu
Tsinghua University
Department of Physics
China