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Symposium ED3 : Physics, Chemistry and Materials for Beyond Silicon Electronics

2017-04-18   Show All Abstracts

Symposium Organizers

Rinus Lee, GLOBALFOUNDRIES
Kah-Wee Ang, National University of Singapore
Nadine Collaert, IMEC
Tony Low, University of Minnesota

Symposium Support

Applied Materials
Kokusai Semiconductor Equipment Corporation
ED3.1: 2D Device Technology
Session Chairs
Kah-Wee Ang
Nadine Collaert
Tuesday AM, April 18, 2017
PCC North, 100 Level, Room 127 C

10:30 AM - *ED3.1.01
From Black Phosphorus to Phosphorene and Beyond

Peide Ye 1
1 , Purdue University, West Lafayette, Indiana, United States

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11:00 AM - ED3.1.02
Adatoms Doping Effects on the Thermal Stability of Black Phosphorus Formed on High-K Gate Dielectric

Xuewei Feng 1 , Vadym Kulish 2 , Ping Wu 2 , Xinke Liu 3 , Kah-Wee Ang 1
1 Department of Electrical and Computer Engineering, National University of Singapore, Singapore Singapore, 2 , Singapore University of Technology and Design, Singapore Singapore, 3 College of Materials Science and Engineering, Shenzhen University, Shenzhen, Guangdong, China

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11:15 AM - ED3.1.03
Intrinsic Bipolar Molybdenum Disulfide via One Dimensional Electrical Contact

Zheng Yang 1 , Chang Ho Ra 1 , Jiyoung Noh 2 , Faisal Ahmed 1 , Jaehwan Kweon 1 , James Hone 3 , Kyeongjae Cho 2 , Won Jong Yoo 1 , Inyong Moon 1
1 , SKKU Advanced Institute of Nano Technology, SUWON-SI Korea (the Republic of), 2 Department of Materials Science and Engineering, and Department of Physics, University of Texas at Dallas, Richardson, Texas, United States, 3 , Columbia University, New York City, New York, United States

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11:30 AM - ED3.1.04
Carrier Density Modulation and Polarity Control of MoTe2 via Electron Beam Irradiation

Min Sup Choi 1 2 , Myeongjin Lee 1 2 , Inyong Moon 1 2 , Won Jong Yoo 1 2
1 , Sungkyunkwan University, Suwon Korea (the Republic of), 2 , SKKU Advanced Institute of Nano-Technology, Suwon Korea (the Republic of)

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11:45 AM - ED3.1.05
Surface Functionalization of Graphene via the Controlled Assembly of 2D Micelles

Benjamin Robinson 1 , Oleg Kolosov 1 , Steven Bailey 1 , Martin Bryce 2 , Sam Jarvis 1 , Colin Lambert 1
1 , Lancaster University, Lancaster United Kingdom, 2 , Durham University, Durham United Kingdom

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ED3.2: Wafer Scale 2D Electronics
Session Chairs
Kah-Wee Ang
Tony Low
Tuesday PM, April 18, 2017
PCC North, 100 Level, Room 127 C

1:30 PM - *ED3.2.01
Two-Dimensional Materials: From Properties to Applications

Steven Koester 1
1 , University of Minnesota, Minneapolis, Minnesota, United States

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2:00 PM - ED3.2.02
Interface Control of 2D Materials to Enable Wafer Scale Transfer and Tuning of Electronic Properties

Daniele Chiappe 1 , Alessandra Leonhardt 1 2 , Cesar Javier Lockhart de la Rosa 1 2 , Inge Asselberghs 1 , Olli Virkki 1 3 , Umberto Celano 1 , Marta Perucchini 1 , Ashish Dabral 1 4 , Thierry Conard 1 , Valeri Afanasiev 4 , Geoffrey Pourtois 1 , Steven Brems 1 , Cedric Huyghebaert 1 , Matty Caymax 1 , Stefan de Gendt 1 2 , Iuliana Radu 1
1 , imec Leuven & Hasselt University, Leuven Belgium, 2 Department of Chemistry, University of Leuven, Leuven, Choose a State or Province, Belgium, 3 , University of Jyvaskyla, Jyvaskyla Finland, 4 Department of Physics and Astronomy, University of Leuven, Leuven Belgium

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2:15 PM - ED3.2.03
Growth of Continuous Graphene by Open Roll-to-Roll Chemical Vapour Deposition

Guofang Zhong 1 , Xingyi Wu 1 , Lorenzo D'Arsie 1 , Kenneth Teo 2 , Nalin Rupesinghe 2 , Alex Jouvray 2 , John Robertson 1
1 Department of Engineering, University of Cambridge, Cambridge United Kingdom, 2 , AIXTRON Ltd, Cambridge United Kingdom

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2:30 PM - ED3.2.04
High n-Type Conduction in Si-Doped Al0.84Ga0.16N Epilayers for Deep Ultraviolet Emitters

Talal Al Tahtamouni 1 , Jing Li 2
1 , Qatar University, Doha Qatar, 2 , Texas Tech University, Lubbock, Texas, United States

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2:45 PM -
BREAK

ED3.3: New Electronics Materials and Design
Session Chairs
Kah-Wee Ang
Dinesh Thanu
Tuesday PM, April 18, 2017
PCC North, 100 Level, Room 127 C

3:15 PM - *ED3.3.01
Exploring the 2-D Material Design Space through Ab Initio Device Simulation

Mathieu Luisier 1 , Aron Szabo 1 , Christian Stieger 1 , Hamilton Carrillo-Nunez 1
1 , ETH Zurich, Zurich Switzerland

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3:45 PM - ED3.3.02
Electrical Resistivity of Mesoporous and Quasi-Monocrystalline Germanium

Meghan Beattie 1 , Youcef Bioud 2 , Abderraouf Boucherif 2 , David Hobson 1 , Richard Ares 2 , Dominique Drouin 2 , Christopher Valdivia 1 , Karin Hinzer 1
1 SUNLAB, Centre for Research in Photonics, University of Ottawa, Ottawa, Ontario, Canada, 2 Laboratoire Nanotechnologies Nanosystèmes (LN2) - CNRS UMI-3463, Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, Quebec, Canada

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4:00 PM - ED3.3.03
Zintl Layer Formation during Atomic Layer Deposition of Crystalline Perovskites on Ge (001)

Shen Hu 1 , Edward Lin 1 , Ali Hamze 1 , HsinWei Wu 2 , David Smith 2 , Alexander Demkov 1 , John Ekerdt 1
1 , University of Texas at Austin, Austin, Texas, United States, 2 , Arizona State University, Tempe, Arizona, United States

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4:15 PM - ED3.3.04
Ternary Oxide Nanowires for Ultraviolet Photosensing Applications

Jiangxin Wang 1 , Pooi See Lee 1
1 School of Materials Science and Engineering, Nanyang Technological University, Singapore Singapore

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4:30 PM - ED3.3.05
Theory of Magneto-Resistance of Organic Molecular Tunnel Junctions with Non-Magnetic Electrodes

Sha Shi 1 , Zuoti Xie 1 , C. Daniel Frisbie 1 , Darryl L. Smith 1 , P. Paul Ruden 1
1 , University of Minnesota, Saint Paul, Minnesota, United States

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4:45 PM - ED3.3.06
Photoemission Electron Microscopy as a New Tool to Study the Electronic Properties of 2D Crystals on Silicon Oxide

Taisuke Ohta 1 , Morgann Berg 1 , Kunttal Keyshar 2 , Calvin Chan 1 , Jeremy Robinson 3 , Gautam Gupta 4 , Pulickel Ajayan 2 , Aditya Mohite 4
1 , Sandia National Laboratories, Albuquerque, New Mexico, United States, 2 , Rice University, Houston, Texas, United States, 3 , Naval Research Laboratory, Washington, District of Columbia, United States, 4 , Los Alamos National Laboratory, Los Alamos, New Mexico, United States

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ED3.4: Poster Session
Session Chairs
Tuesday PM, April 18, 2017
Sheraton, Third Level, Phoenix Ballroom

8:00 PM - ED3.4.01
Low Energy Ion Implantation and Annealing of Au/Ni/Ti Contacts to n-SiC

Neelu Shrestha 1 , Martyn Kibel 2 , Patrick Leech 1 , Anthony Holland 1 , Geoffrey Reeves 1 , Mark Ridgway 3 , Phillip Tanner 4
1 School of Engineering, RMIT University, Melbourne, Victoria, Australia, 2 Centre for Materials and Surface Science, LaTrobe University, Bundoora, Victoria, Australia, 3 Electronic Materials Engineering, Australian National University, Canberra, Australian Capital Territory, Australia, 4 Queensland Microtechnology Facility, Griffith University, Brisbane, Queensland, Australia

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8:00 PM - ED3.4.02
Redox Properties, Charge Transport and Device Performance in WO3 Electrolyte-Gated Thin-Films Transistors

Martin Barbosa 1 2 , Xiang Meng 2 , Clara Santato 2 , Marcelo Orlandi 1
1 , UNESP, Araraquara Brazil, 2 , Montreal Polytechnique, Montreal, Quebec, Canada

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8:00 PM - ED3.4.03
Black Phosphorus Quantum Dots for Holes Extraction of Typical Planar Hybrid Perovskite Solar Cells

Ligeng Wang 1 , Wei Chen 1 , Zhubing He 1
1 Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, China

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8:00 PM - ED3.4.04
Evolution of the Crystal Structure of BAlN Thin Films with Increasing Boron Concentration in the Gas Flow

Shuo Wang 1 , XiaoHang Li 2 3 , Alec Fischer 1 , Theeradetch Detchprohm 2 , Russell Dupuis 2 , Fernando Ponce 1
1 Department of Physics, Arizona State University, Tempe, Arizona, United States, 2 Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia, United States, 3 Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal Saudi Arabia

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8:00 PM - ED3.4.05
Liquid Phase Epitaxy for Growth of High-Quality Crystalline Germanium (100) on Silicon (100) Wafers

Saloni Chaurasia 1 , Srinivasan Raghavan 1 , Sushobhan Avasthi 1
1 Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, Karnataka, India

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8:00 PM - ED3.4.07
Low Temperature Germanium Surface Passivation Formed Using In Situ NH3/N2 PECVD Nitration for High Quality Ge-MOS Capacitors

Ghada Dushaq 1 , Mahmoud Rasras 1 , Ammar Nayfeh 1
1 , Masdar Institute, Abu Dhabi United Arab Emirates

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8:00 PM - ED3.4.08
Amorphous IZTO Thin-Film Transistor Stability Improvement via Oxygen Vacancy Reduction

Jinhee Park 1 , Eric Young 1 , Chao Li 1 , Mark Goorsky 1 , Dwight Streit 1
1 Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California, United States

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8:00 PM - ED3.4.10
Thin Silicon Films Grown Using Ultra-High-Vacuum Evaporation and Conventional Plasma Enhanced Chemical Vapor Deposition Means—The Potential for Device Applications

Farida Orapunt 2 , David Lockwood 3 , Jordan Andrews 1 , Stephen O'Leary 1
2 Faculty of Engineering and Applied Science, University of Regina, Regina, Saskatchewan, Canada, 3 Measurement Science and Standards, National Research Council of Canada, Ottawa, Ontario, Canada, 1 , University of British Columbia, Kelowna, British Columbia, Canada

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8:00 PM - ED3.4.11
Challenges to Overcome in Graphene Synthesis for New Generation Electronics

Selcuk Temiz 1 , Zafer Mutlu 1 , Mihrimah Ozkan 1 , Cengiz Ozkan 1
1 , University of California, Riverside, Riverside, California, United States

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8:00 PM - ED3.4.12
Photoemission Analysis of Oxygen Chemisorption and Electronic Structure of Epitaxial GaN Films Grown on Different Substrates

Monu Mishra 1 2 , Shibin Krishna 1 2 , Neha Aggarwal 1 2 , Govind Gupta 1 2
1 , CSIR-National Physical Laboratory, Delhi India, 2 , Academy of Scientific and Innovative Research, Delhi, New Delhi, India

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8:00 PM - ED3.4.13
Physical Vapor Deposition of Ge Nanostructures on Si Substrates Using Solid Ge Sources

Yize Li 1 , John Nguyen 1
1 , California State University, Bakersfield, California, United States

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8:00 PM - ED3.4.14
Low Temperature Plasma Heteroepitaxy of Si and SiGe on (100) GaAs

Pere Roca i Cabarrocas 1 , Jean-luc Maurice 1 , Decobert Jean 2 , Vaissiere Nicolas 1 , Hamon Gwenaelle 1
1 LPICM, CNRS, Ecole Polytechnique, Palaiseau France, 2 , III-V Lab, Marcousis France

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8:00 PM - ED3.4.15
Capacitance—Voltage Measurement of Al/HfO2/InGaAs MOS Capacitor on Silicon Substrate

Sisir Chowdhury 1 , Pallab Banerji 1
1 , IIT Kharagpur, Paschim Medinipur India

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8:00 PM - ED3.4.16
Single GaAs Nanowire/Graphene Hybrid Devices Fabricated by a Position Controlled Micro Transfer and Imprinting Technique for Embedded Structure

Anjan Mukherjee 1 , Dong-Chul Kim 1 2 , Hoyeol Yun 3 , Miri Seo 4 , JungTae Nam 5 , Keun Soo Kim 5 , Sang Wook Lee 4 , A. Mazid Munshi 2 , Dasa L. Dheeraj 2 , Bjorn-Ove Fimland 1 , Helge Weman 1
1 Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), Trondheim Norway, 2 , Crayonano AS, Trondheim Norway, 3 School of Physics, Konkuk University, Seoul Korea (the Republic of), 4 Department of Physics, Ewha Womans University, Seoul Korea (the Republic of), 5 Department of Physics and Graphene Research Institute, Sejong University, Seoul Korea (the Republic of)

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8:00 PM - ED3.4.17
Microstructure Analysis and Multiple Photoluminescence in High Temperature Electronic Conducting InZrZnO Thin Films

Jayaram Peediyekkal 1 , Prasoon Prasannan 2 , Sulfikkarali NK 3
1 , MES Ponnani College, Malappuram India, 2 Department of Pure and Applied Physics, Kannur University, Kannur, Kerala, India, 3 Department of Physics, Farook College, Calicut, Kerala, India

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8:00 PM - ED3.4.18
Gadolinium Substitution Effect on the Structural, Surface, Chemical Composition and Thermoelectric Properties of Ni0.5 GdxBi0.5-x CoO3

Ramachandran Thuruthiyil 2 , Jayaram Peediyekkal 1
2 Physics, Zamorins Guruvayurappan College, Calicut, Kerala, India, 1 , MES Ponnani College, Malappuram India

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8:00 PM - ED3.4.19
MoS2/Graphene In-Plane Heterostructure—Synthesize, Electronic Properties and Interface Characteristics

Amirhossein Behranginia 1 , Poya Yasaei 1 , Fei Long 2 , Reza Shahbazian-Yassar 1 , Amin Salehi-Khojin 1
1 Mechanical Engineering, University of Illinois at Chicago, Chicago, Illinois, United States, 2 Mechanical Engineering, Michigan Technological University, Houghton, Michigan, United States

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8:00 PM - ED3.4.20
Optical Characterization of Semipolar InGaN/GaN MQWs Grown on Si(001) Substrate

Hojun Lee 1 , Siyoung Bae 2 , Kaddour Lekhal 2 , Yoshio Honda 2 , Hiroshi Amano 1 2
1 , Nagoya University, Nagoya Japan, 2 , Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya Japan

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8:00 PM - ED3.4.21
Probing the Chemical Functionalization of Reduced Graphene Oxide with NEXAFS Spectroscopy

Chris McNeill 1 , Amit Tewari 2 , Dipti Gupta 2 , Lars Thomsen 3 , Eliot Gann 1 3
1 , Monash University, Clayton, Victoria, Australia, 2 , Indian Institute of Technology, Bombay, Mumbai India, 3 , Australian Synchrotron, Clayton, Victoria, Australia

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8:00 PM - ED3.4.22
Synthesis of Few-Layer Rhenium Disulfide via Chemical Vapor Deposition

Michael Valentin 1 , Alison Guan 1 , Cindy Merida 1 , Michael Gomez 1 , I Hsi Lu 1 , Ludwig Bartels 1
1 , University of California, Riverside, Riveride, California, United States

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8:00 PM - ED3.4.23
Investigation on the Synthesis and Properties of Single-Crystalline Nickel Silicide Nanowires

Jen-Yi Lin 1 , Hsiu-Ming Hsu 1 , Kuo-Chang Lu 1
1 Department of Materials Science and Engineering, National Cheng Kung University, Tainan Taiwan

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8:00 PM - ED3.4.24
Atomic Scale Simulations of Phosphorus-Vacancy-Nitrogen and Nitrogen-Self-Interstitial Complexes in Germanium

Piotr Spiewak 1 , Kamil Czelej 1 , Krzysztof Kurzydlowski 1
1 , Warsaw University of Technology, Warsaw Poland

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8:00 PM - ED3.4.25
Zirconium-Doped MgZnO Thin Film Deposited Using RF Magnetron Sputtering

Kuang-Po Hsueh 1 , Wen-Yen Lin 1 , Hsien-Chin Chiu 2 , Jinn-Kong Sheu 3 , Po-Hsun Liao 3 , Jenq-Yang Chang 4
1 , Vanung University, Chung-Li Taiwan, 2 Department of Electronics Engineering, Chang Gung University, Tao-Yuan Taiwan, 3 Department of Photonics, National Cheng Kung University, Tainan Taiwan, 4 Optical Science Center, National Central University, Tao-Yuan Taiwan

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8:00 PM - ED3.4.26
Single Element Device Using SnO Micro Discs for Gas Sensor Application

Marcelo Orlandi 1 , Mateus Masteghin 1
1 , UNESP, Araraquara Brazil

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8:00 PM - ED3.4.27
Hydrothermal Growth Of Zinc Oxide

Leeju Singh 2 1 , Ghanshyam Varma 2 1
2 Physics, IIT Roorkee, Roorkee, Uattarkhand, India, 1 , Indian Institute Of Technology Roorkee, Roorkee India

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8:00 PM - ED3.4.28
Reduced Graphene Oxide Synthesized by Intense Pulse Light on Colorless Polyimide Film for Wearable Chemical Sensors

Seon-Jin Choi 2 1 , Il Doo Kim 1
2 Applied Science Research Institute, Korea Advanced Institute of Science and Technology, Daejeon Korea (the Republic of), 1 Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Youseong-Gu Korea (the Republic of)

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8:00 PM - ED3.4.29
Effect of Plasma Power on Properties of Amorphous Silicon Carbide Hard Mask Films Deposited by Plasma Enhanced Chemical Vapor Deposition

Sungwoo Lee 1 , Jaeyoung Yang 1 , Sanghak Yeo 1 , Taekjib Choi 2 , ChulMin Youn 2
1 , TES, Yongin-Si Korea (the Republic of), 2 Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul Korea (the Republic of)

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8:00 PM - ED3.4.30
GaAs(100) Surface Passivation with Sulfide and Fluoride Ions

Pawan Tyagi 1 2
1 , University of District of Columbia, Washington, District of Columbia, United States, 2 , Indian Institute of Technology, Kanpur, UP, India

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8:00 PM - ED3.4.31
First-Principles Study of N-Type Doping in Amorphous In-Ga-Zn-O Semiconductors

. Divya 1 2 , Rajendra Prasad 3 , . Deepak 1 2
1 Department of Materials Science and Engineering, Indian Institute of Technology Kanpur, Kanpur India, 2 National Center for Flexible Electronics (FlexE), Indian Institute of Technology, Kanpur, Kanpur India, 3 Department of Physics, Indian Institute of Technology Kanpur, Kanpur India

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8:00 PM - ED3.4.32
High Temperature Characteristics of Pt/TaSi2/Pt/W and Pt/Ti/W Diffusion Barriers for Ohmic Contacts on 4H-SiC

Robert Okojie 1 , Dorothy Lukco 2 1
1 , NASA Glenn Research Center, Cleveland, Ohio, United States, 2 , Vantage Partners, LLC, Cleveland, Ohio, United States

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2017-04-19   Show All Abstracts

Symposium Organizers

Rinus Lee, GLOBALFOUNDRIES
Kah-Wee Ang, National University of Singapore
Nadine Collaert, IMEC
Tony Low, University of Minnesota

Symposium Support

Applied Materials
Kokusai Semiconductor Equipment Corporation
ED3.5: III-V Growth and Interfaces
Session Chairs
Nadine Collaert
Rinus Lee
Wednesday AM, April 19, 2017
PCC North, 100 Level, Room 127 C

8:15 AM - *ED3.5.01
Addressing Challenges of III-V on Si Integration by Developing High Productivity Epi Process in Compatible 300mm MOCVD System

Zia Karim 1 , Zhongyuan Jia 1 , Subbu Tamilmani 1
1 , Aixtron Inc, Sunnyvale, California, United States

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8:45 AM - ED3.5.02
Electrical Properties of GaAs, InAs, InGaAs Epitaxially Grown on 300 mm Si(001) Substrate by MOCVD

Reynald Alcotte 1 , Mickael Martin 1 , Tiphaine Cerba 1 , Jeremy Moeyaert 1 , Fares Chouchane 1 , Sylvain David 1 , Bassem Salem 1 , Franck Bassani 1 , Frederique Ducroquet 1 , Yann Bogumilowicz 2 , Thierry Baron 1
1 , CNRS, Grenoble France, 2 , CEA - LETI, Grenoble France

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9:00 AM - ED3.5.03
Native Point Defect Formation Energies in Binary Compound Semiconductors

Ashutosh Kumar 2 1 , Oscar Restrepo 3 1 , Wolfgang Windl 1
2 , Synopsys Inc., Mountain View, California, United States, 1 , The Ohio State University, Columbus, Ohio, United States, 3 , GLOBALFOUNDRIES, Malta, New York, United States

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9:15 AM - ED3.5.04
III-V Semiconductor/Oxide Interfaces upon Thermal Oxidation and High-K ALD Investigated by XPS

Andrea Troian 1 , Johan Knutsson 1 , Sarah McKibbin 1 , Aein Babadi 2 , Lars-Erik Wernersson 2 , Anders Mikkelsen 1 , Rainer Timm 1
1 Synchrotron Radiation Research and NanoLund, Lund University, Lund Sweden, 2 Nanoelectronics and NanoLund, Lund University, Lund Sweden

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9:30 AM -
BREAK

ED3.6: Semiconductor Doping
Session Chairs
Nadine Collaert
Rinus Lee
Wednesday AM, April 19, 2017
PCC North, 100 Level, Room 127 C

10:00 AM - *ED3.6.01
Surface Transfer Doping—A Novel Alternative to Classical Doping in Semiconductor Electronics

Vidhya Chakrapani 1
1 , Rensselaer Polytechnic Institute, Troy, New York, United States

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10:30 AM - ED3.6.02
Controlling MLD Dopant Diffusion in Group IV Materials Using Inorganic Spacers

Giuseppe Alessio Verni 1 2 , Noel Kennedy 1 2 , Brenda Long 1 2 3 , Ray Duffy 2 , Justin D. Holmes 1 2 3
1 , University College Cork, Cork Ireland, 2 , Tyndall Research Institute, Cork Ireland, 3 , CRANN, Dublin Ireland

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10:45 AM - ED3.6.03
Beryllium-Doped Indium Gallium Arsenide—An Ab Initio Study for the Explanation of Anomalous Dopant Diffusion Behavior

Mahasin Alam Sk 1 , Wenyan Liu 2 , Sergei Manzhos 1 , Ignatio Martin-Bragado 3 , Siew Ann Cheong 2
1 , National University of Singapore, Singapore Singapore, 2 , NTU, Singapore Singapore, 3 , IMDEA Materials Institute, Madrid Spain

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11:00 AM - ED3.6.04
Temperature Dependent Transport at Silicide/Silicon Interfaces

LeighAnn Larkin 1 , Mitchell Godfrey 2 , Pamela Norris 2
1 Engineering Physics, University of Virginia, Charlottesville, Virginia, United States, 2 Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia, United States

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11:15 AM -
OPEN DISCUSSION

11:30 AM - ED3.6.06
Germanium Junctions for Beyond-Si Node Using Flash Lamp Annealing (FLA)

Hideaki Tanimura 1 , Hikaru Kawarazaki 1 , Kazuhiko Fuse 1 , Makoto Abe 1 , Yoshio Ito 1 , Takayuki Aoyama 1 , Shinichi Kato 1 , Ippei Kobayashi 1 , Tsutomu Nagayama 2 , Nariaki Hamamoto 2 , Shigeki Sakai 2
1 , SCREEN Semiconductor Solutions Co., Ltd., Hikone-City Japan, 2 , Nissin Ion Equipment Co., Ltd., Kyoto Japan

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11:45 AM - ED3.6.07
Ab Initio Simulation of Metal Contacts to 2D Semiconductors with Electron-Phonon Interactions

Wushi Dong 1 2 , Peter Littlewood 1 2
1 , The University of Chicago, Chicago, Illinois, United States, 2 , Argonne National Laboratory, Chicago, Illinois, United States

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ED3.7: Process Technologies for Beyond Si
Session Chairs
Nadine Collaert
Dinesh Thanu
Wednesday PM, April 19, 2017
PCC North, 100 Level, Room 127 C

1:30 PM - *ED3.7.01
CMP Challenges for Advanced Technology Nodes Beyond Si

John Zhang 1 , Stan Tsai 1 , Jody Fronheiser 1 , Shariq Siddiqui 1 , Steven Bentley 1 , Raghuveer Patlolla 2 , Donald Canaperi 2 , Charan Surisetty 2 , Walter Kleemeier 1 , Cathy Labelle 1
1 Albany Nanotechnology Center, GLOBALFOUNDRIES, Albany, New York, United States, 2 Albany Nanotechnology Center, IBM Research, Albany, New York, United States

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2:00 PM - ED3.7.02
Surface Chemistry and Atomic Layer Etching of III-V Semiconductors in Acidic Solutions for N5 Technology Nodes and beyond

Dennis Van Dorp 1 , Sophia Arnauts 1 , Greg Quintens 3 , Thierry Conard 1 , John Kelly 2 , Frank Holsteyns 1
1 , imec Leuven & Hasselt University, Leuven Belgium, 3 , Catholic University Leuven, Leuven Belgium, 2 , Debye Institute for NanoMaterials Science, Utrecht Netherlands

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2:15 PM - ED3.7.03
Enhanced UV-Detection with Etching Induced Ordered Nanostructures on Polar & Non-Polar Epitaxial GaN Films

Monu Mishra 1 2 , Abhiram Gundimeda 1 , Shibin Krishna 1 2 , Neha Aggarwal 1 2 , Govind Gupta 1 2
1 , National Physical Laboratory, New Delhi India, 2 , Academy of Scientific and Innovative Research, Delhi India

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2:30 PM -
BREAK

ED3.8: New Electronics
Session Chairs
Nadine Collaert
Dinesh Thanu
Wednesday PM, April 19, 2017
PCC North, 100 Level, Room 127 C

3:30 PM - *ED3.8.01
Fabrication of Superconducting Qubits with Low Variability at 300mm Wafer Scale

Satyavolu Papa Rao 1 , Chris Hobbs 1 , Neda Forouzani 3 , Kevin Osborn 3 4 , Eric Holland 1 , Stephen Olson 2 , Matt Malloy 1 , Dominic Ashworth 1 , Brendan O'Brien 1 , Benjamin Bunday 1 , Domenico DiPaola 2 , Patrick Kearney 1 , Paul Hansen 1 , William Advocate 1 , Thomas Murray 2 , Stephen Bennett 2 , Steven Novak 2 , Martin Rodgers 2 , Brett Baker-O'Neal 2 , Brian Sapp 1 , Edward Barth 1 , Jeffrey Hedrick 1 , Ronald Goldblatt 1
1 , SEMATECH, Albany, New York, United States, 3 Laboratory for Physical Sciences, University of Maryland, College Park, Maryland, United States, 4 Joint Quantum Institute, University of Maryland, College Park, Maryland, United States, 2 , State University of New York Polytechnic Institute, Albany, New York, United States

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4:00 PM - ED3.8.02
High-Throughput Computational Search for Transparent Semiconducting Materials

Geoffroy Hautier 1 , Joel Varley 2 , Viet Anh Ha 1 , Anna Miglio 1 , Michiel Van Setten 1 , Gian-Marco Rignanese 1
1 , University of Catholique-Louvain, Louvain-la-Neuve Belgium, 2 , Lawrence Livermore National Laboratory, Livermore, California, United States

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4:15 PM - ED3.8.03
BAs—A Competitor for Diamond in Thermal Conductivity?

Yaxian Wang 1 , Wolfgang Windl 1
1 , The Ohio State University, Columbus, Ohio, United States

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4:30 PM - ED3.8.04
Interface and Thermal Characterisation of Diamond on CMOS Devices—CVD Diamond on HEMT

Rajesh Ramaneti 1 2 , Svetlana Korneychuk 3 , Yan Zhou 4 , Julian Anaya 4 , Paulius Pobedinskas 1 2 , Joff Derluyn 5 , Johan Verbeeck 3 , Martin Kuball 4 , Ken Haenen 1 2
1 , Institute for Materials Research (IMO), Hasselt University, Diepenbeek Belgium, 2 IMOMEC Division, imec, Diepenbeek Belgium, 3 Electron Microscopy for Materials Science, University of Antwerp, Antwerp Belgium, 4 , University of Bristol, Bristol United Kingdom, 5 , EpiGan nv, Hasselt Belgium

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4:45 PM - ED3.8.05
Science and Technology of Polycrystalline Diamond Films on Silicon Substrates Integrated into Schottky Diodes as an Alternative to Crystalline Diamond-Based Diodes for Electronic Power Devices

Jesus Alcantar-Pena 1 2 , Gerardo Gutierrez-Heredia 1 , Josefina Arellano-Jimenez 3 , J.E. Ortega Aguilar 3 , Dainet Berman-Mendoza 2 , Miguel Yacaman 3 , Orlando Auciello 1
1 Materials Science and Engineering, University of Texas-Dallas, Richardson, Texas, United States, 2 Investigation in Physics, University of Sonora, Hermosillo, Sonora, Mexico, 3 Physics & Astronomy, University of Texas-San Antonio, San Antonio, Texas, United States

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2017-04-20   Show All Abstracts

Symposium Organizers

Rinus Lee, GLOBALFOUNDRIES
Kah-Wee Ang, National University of Singapore
Nadine Collaert, IMEC
Tony Low, University of Minnesota

Symposium Support

Applied Materials
Kokusai Semiconductor Equipment Corporation
ED3.9: 2D Electronics and Growth
Session Chairs
Xinke Liu
Tony Low
Thursday AM, April 20, 2017
PCC North, 100 Level, Room 127 C

8:00 AM - *ED3.9.01
Contact Resistance of Emerging Semiconductors Formed with Two Dimensional Materials

Won Jong Yoo 1
1 , Sungkyunkwan University, Suwon Korea (the Republic of)

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8:30 AM - ED3.9.02
Characterization of Solid-Supported Graphene, Metals, and Other Nanoscale Films and Molecular Interactions Using MP-SPR

Niko Granqvist 1 , Annika Jokinen 1 , Janusz Sadowski 1
1 , BioNavis Ltd., Tampere Finland

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8:45 AM - ED3.9.03
Scalable Planar Fabrication Processes for Chalcogenide-Based Topological Insulators

Peter Sharma 1 , David Henry 1 , Erica Douglas 1 , Ana Lima Sharma 1 , Rupert Lewis 1 , Joshua Sugar 1 , Maryam Salehi 2 , Nikesh Koirala 2 , Seongshik Oh 2
1 , Sandia National Laboratories, Albuquerque, New Mexico, United States, 2 Physics, Rutgers University, Piscataway, New Jersey, United States

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9:00 AM - ED3.9.04
Chelant Enhanced Solution Processing for Wafer Scale Synthesis of Transition Metal Dichalcogenide Thin Films

Robert Ionescu 1 , Brennan Campbell 1 , Ryan Wu 2 , Ece Aytan 1 , Andrew Patalano 1 , Isaac Ruiz 1 , Zachary Favors 1 , Andre Mkhoyan 2 , Mihri Ozkan 1 , Cengiz Ozkan 1
1 , University of California, Riverside, Riverside, California, United States, 2 , University of Minnesota, Minneapolis, Minnesota, United States

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9:15 AM - ED3.9.05
Phosphorus Substitutional Doping of Ultrathin Metal Dichalcogenides by Plasma-Assisted Chemical Vapor Deposition

Inyong Moon 1 , Won Jong Yoo 1
1 SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, Suwon Korea (the Republic of)

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9:30 AM -
BREAK

ED3.10: 2D and Oxide Electronics
Session Chairs
Xinke Liu
Dinesh Thanu
Thursday AM, April 20, 2017
PCC North, 100 Level, Room 127 C

10:00 AM - *ED3.10.01
On the Performance of Two-Dimensional Material Devices for Electronic Applications

Gianluca Fiori 1 , Giuseppe Iannaccone 1
1 , University of Pisa, Pisa Italy

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10:30 AM - ED3.10.02
Anisotropy of Electron Transport in Monoclinic β-Ga2O3

Krishnendu Ghosh 1 , Uttam Singisetti 1
1 Electrical Engineering, University at Buffalo, Buffalo, New York, United States

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10:45 AM - ED3.10.03
Mechanical Exfoliation of Ultra-Wide Band Gap β-Ga2O3 and Its Contact Properties

Jinho Bae 1 , Hong-Yeol Kim 1 , Jihyun Kim 1
1 , Korea University, Seongbuk-gu, SE, Korea (the Republic of)

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11:00 AM - ED3.10.04
Growth and Characterisation of Non-Polar and Semi-Polar GaN on Si with Er2O3 Interlayer

Tomas Grinys 1 , Tadas Malinauskas 1 , Kazimieras Badokas 1 , Tomas Drunga 1 , Sandra Stanionyte 2 , Martin Frentrup 3 , Rytis Dargis 4 , Andrew Clark 5
1 , Institute of Applied Research, Vilnius University, Vilnius Lithuania, 2 , Center for Physical Sciences and Technology, Vilnius Lithuania, 3 , The Cambridge Centre for Gallium Nitride, University of Cambridge, Cambridge United Kingdom, 4 , IQE Inc., Greensboro, North Carolina, United States, 5 , IQE Inc., Bethlehem, Pennsylvania, United States

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11:15 AM - ED3.10.05
Transparent and Flexible Tin Oxide Electrolyte-Gated Transistors

Fabio Cicoira 1 , Irina Valitova 1 , Clara Santato 1 , Francesca Soavi 2 , Prajwal Kumar 1
1 , Polytechnique Montreal, Montreal, Quebec, Canada, 2 Chemistry, Università di Bologna, Bologna Italy

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11:30 AM - ED3.10.06
Highly Reliable Devices Using Crystalline-Indium-Tin-Zinc-Oxide Thin Film Transistors

Solah Park 1 , Kyung Park 2 , Ho-Joong Kim 1 , Jang-Yeon Kwon 1 2
1 , Yonsei University, Incheon Korea (the Republic of), 2 , Yonsei Institute of Convergence Technology, Incheon Korea (the Republic of)

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11:45 AM - ED3.10.07
Characterization of Plasma-Enhanced Atomic Layer Deposited Ga2O3 Using Gallium(iii) Acetylacetonate

Mei Hao 1 , Jialing Yang 1 , Brianna Eller 1 , Robert Nemanich 1 , Srabanti Chowdhury 1
1 , Arizona State University, Mesa, Arizona, United States

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ED3.11: III-V/N Electronics
Session Chairs
Rinus Lee
Dinesh Thanu
Thursday PM, April 20, 2017
PCC North, 100 Level, Room 127 C

1:30 PM - *ED3.11.01
Monolithic Integration of III-V Materials on Si for Nano- and Optoelectronic Applications

Stephan Wirths 1 , Benedikt Mayer 1 , Johannes Gooth 1 , Svenja Mauthe 1 , Nicolas Bologna 1 , Heinz Schmid 1 , Heike Riel 1 , Kirsten Moselund 1
1 Science & Technology, IBM Research GmbH, Zurich Switzerland

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2:00 PM - ED3.11.02
Conformal GaN HEMTs for Flexible RF Power Amplifiers

Nicholas Glavin 1 , Kelson Chabak 1 , Michael Snure 1 , Elizabeth Moore 2 1 , Timothy Prusnick 2 1 , Donald Dorsey 1 , Eric Heller 1
1 , Air Force Research Laboratory, Dayton, Ohio, United States, 2 , Wyle, Dayton, Ohio, United States

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2:15 PM - ED3.11.03
Vertical GaN Schottky Barrier Diodes with Record High Current Ion/Ioff Ratio (~2.3×1010) on Free-Standing GaN Wafer

Chao Li 1 , Zhonghui Huang 1 , Jianfeng Wang 3 , Ke Xu 3 , Jin-Ping Ao 2 , Xinke Liu 1
1 , Shenzhen University, Shenzhen China, 3 , Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS, Suzhou China, 2 Institute of Technology and Science, University of Tokushima, Tokushima Japan

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2:30 PM - ED3.11.04
Analysis of Reverse Breakdown and Leakage Mechanisms of AlN Schottky Diodes Operating at Elevated Temperature

Houqiang Fu 1 , Xuanqi Huang 1 , Hong Chen 1 , Zhijian Lu 1 , Xiaodong Zhang 1 , Yuji Zhao 1
1 , Arizona State University, Tempe, Arizona, United States

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2017-04-21   Show All Abstracts

Symposium Organizers

Rinus Lee, GLOBALFOUNDRIES
Kah-Wee Ang, National University of Singapore
Nadine Collaert, IMEC
Tony Low, University of Minnesota

Symposium Support

Applied Materials
Kokusai Semiconductor Equipment Corporation
ED3.12: 2D Electronics and Physics
Session Chairs
Tony Low
Dinesh Thanu
Friday AM, April 21, 2017
PCC North, 100 Level, Room 127 C

8:30 AM - *ED3.12.01
Engineering Quantum Confinement in Semiconducting van der Waals Heterostructure

Philip Kim 1
1 , Harvard University, Cambridge, Massachusetts, United States

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9:00 AM - ED3.12.02
Understanding Graphene's Interface with Different Dielectrics in Graphene Devices

Mona Ebrish 1 2 , Steven Koester 2
1 , IBM, Albany, New York, United States, 2 Electrical Engineering, University of Minnesota, Minneapolis, Minnesota, United States

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9:15 AM - ED3.12.03
Intrinsic Roughness in Suspended van der Waals Heterostructures

Joachim Dahl Thomsen 1 , Tue Gunst 1 , Soren Schou Gregersen 1 , Lene Gammelgaard 1 , Bjarke Jessen 1 , David Mackenzie 1 , Kenji Watanabe 2 , Takashi Taniguchi 2 , Peter Boggild 1 , Timothy J. Booth 1
1 Department of Micro and Nanotechnology, Technical University of Denmark, Kgs. Lyngby Denmark, 2 , National Institute for Materials Science (NIMS), Tsukuba Japan

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9:30 AM - ED3.12.04
THz-TDS Carrier Mobility Mapping of Graphene—Defects and Scattering Dynamics

Peter Boggild 1 , Jonas Due Buron 1 , Patrick Whelan 1 , Dirch Petersen 1 , David Mackenzie 1 , Timothy J. Booth 1 , Peter Jepsen 2
1 Centre of Nanostructured Graphene, DTU Nanotech, Technical University of Denmark, Kgs. Lyngby Denmark, 2 Centre of Nanostructured Graphene, DTU Fotonik, Technical University of Denmark, Kgs. Lyngby Denmark

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9:45 AM - ED3.12.05
High Electrical Filed Transport and Related Thermal Spreading in van der Waals Heterostructures

Faisal Ahmed 1 , Min Sup Choi 2 , Young Kim 3 , James Hone 3 , Won Jong Yoo 1 2
1 School of Mechanical Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, Korea (the Republic of), 2 Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do, Korea (the Republic of), 3 Department of Mechanical Engineering, Columbia University, New York, New York, United States

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10:00 AM -
BREAK

ED3.13: 2D Optoelectronics
Session Chairs
Tony Low
Dinesh Thanu
Friday AM, April 21, 2017
PCC North, 100 Level, Room 127 C

10:30 AM - *ED3.13.01
Strong Index Control in Graphene and TMDs for Electrooptic Modulation

Volker Sorger 1
1 , George Washington University, Washington, District of Columbia, United States

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11:00 AM - ED3.13.02
High Performance Photovoltaic Based on Black Phosphorus p-n Homojunction Diode

Yuanda Liu 1 3 , Yongqing Cai 2 , Gang Zhang 2 , Yong-Wei Zhang 2 , Kah-Wee Ang 1
1 Department of Electrical and Computer Engineering, National University of Singapore, Singapore Singapore, 3 School of Electronic Science and Engineering, Nanjing University, Nanjing China, 2 , Institute of Higher Performance Computing, Singapore Singapore

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11:15 AM - ED3.13.03
Tuning of Structural and Optical Properties of GeSn and SiGeSn Thin Films Grown by MOCVD

Jignesh Vanjaria 1 , Tom Salagaj 2 , Nick Sbrockey 2 , Gary Tompa 2 , Hongbin Yu 1
1 , Arizona State University, Tempe, Arizona, United States, 2 , Structured Materials Industries, Piscataway, New Jersey, United States

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