2016 MRS Fall Meeting and Exhibit | Boston, Massachusetts

Symposium EM11 : Wide-Bandgap Materials for Energy Efficiency—Power Electronics and Solid-State Lighting

2016-11-28   Show All Abstracts

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Mitsuru Funato, Kyoto University
Martin Kuball, Univ of Bristol
Matteo Meneghini, University of Padova
EM11.1: GaN Power Electronics I
Session Chairs
Jesus del Alamo
Martin Kuball
Monday PM, November 28, 2016
Hynes, Level 2, Room 201

9:30 AM - *EM11.1.01
Reliability and Instability of GaN MIS-HEMTs for Power Electronics

Jesus del Alamo 1 , Alex Guo 1 , Shireen Warnock 1

1 Massachusetts Institute of Technology Cambridge United States

Show Abstract

10:00 AM - *EM11.1.02
Reliability and trapping issues in GaN based MIS and p-GaN HEMTs

Gaudenzio Meneghesso 1 , Davide Bisi 1 , Isabella Rossetto 1 , Carlo de Santi 1 , Matteo Meneghini 1 , Enrico Zanoni 1

1 University of Padova - DEI Padova Italy

Show Abstract

10:30 AM - EM11.1.03
ALD Epitaxial Growth and Device Applications of MgCaO on GaN

Xiabing Lou 1 , Hong Zhou 2 , Sang Bok Kim 1 , Sami Alghamdi 2 , Xian Gong 1 , Peide Ye 2 , Roy Gordon 1

1 Harvard University Cambridge United States, 2 Purdue University West Lafayette United States

Show Abstract

10:45 AM - EM11.1.04
Atomic Force Microscope Measurements of Thermomechanical and Inverse-Piezoelectric Strain in AlGaN/GaN High Electron Mobility Transistors during Pulsed Operation

Matthew Rosenberger 1 , Man Prakash Gupta 2 , Jason Jones 2 , Eric Heller 3 , Samuel Graham 2 , William King 1

1 University of Illinois Urbana-Champaign Urbana United States, 2 Georgia Institute of Technology Atlanta United States, 3 Air Force Research Laboratory Wright-Patterson Air Force Base United States

Show Abstract

11:00 AM - EM11.1
BREAK

11:30 AM - *EM11.1.05
Ron Reduction of Enhancement-Mode GaN HFET by Ge-Doped Regrown Layer with p-Type NiO Gate

Asamira Suzuki 1 , Songbeak Choe 1 , Hidetoshi Ishida 1 , Daisuke Ueda 2

1 Energy Solution Development Center Panasonic Corporation Osaka Japan, 2 Kyoto Institute of Technology Kyoto Japan

Show Abstract

12:00 PM - *EM11.1.06
Thermal Management in High Voltage Substrate Removal GaN Devices

Farid Medjdoub 1

1 IEMN-CNRS Villeneuve d'ascq France

Show Abstract

12:30 PM - EM11.1.07
Epitaxial Growth of InAlN/GaN Heterostructures on Silicon Substrates in a Single Wafer Rotating Disk MOCVD Reactor

George Papasouliotis 1 , Jing Lu 1 , Jie Su 1 , Ronald Arif 1

1 Vecco Instruments, Inc. Somerset United States

Show Abstract

EM11.2: GaN Power Electronics II
Session Chairs
Isik Kizilyalli
Gaudenzio Meneghesso
Monday PM, November 28, 2016
Hynes, Level 2, Room 201

2:30 PM - *EM11.2.01
Current Topics in Wide Band-Gap Semiconductors for Power Applications and Energy Efficiency

Isik Kizilyalli 1 , Timothy Heidel 1 , Daniel Cunningham 1

1 Advanced Research Projects Agency-Energy United States Department of Energy Washington United States

Show Abstract

3:00 PM - *EM11.2.02
A Roadmap beyond Si Power Electronics Enabled by Wide Bandgap Materials

Srabanti Chowdhury 1

1 Department of Electrical and Computer Engineering University of California Davis United States

Show Abstract

3:30 PM - EM11.2.03
Photoluminescence Characterization of Ion-Implanted and Epitaxial Mg-Doped GaN Prepared on Freestanding GaN Substrates

Shigefusa Chichibu 1 , Kazunobu Kojima 1 , Shinya Takashima 2 , Masaharu Edo 2 , Katsunori Ueno 2 , Mitsuaki Shimizu 3 , Tokio Takahashi 3 , Shoji Ishibashi 3 , Akira Uedono 4

1 Tohoku University Sendai Japan, 2 Fuji Electric Co. Ltd. Tokyo Japan, 3 AIST Tsukuba Japan, 4 Univ. of Tsukuba Tsukuba Japan

Show Abstract

3:45 PM - EM11.2
BREAK

4:15 PM - *EM11.2.04
GaN Lateral and Vertical Transistors for Power Switching

Rongming Chu 1

1 HRL Laboratories Malibu United States

Show Abstract

4:45 PM - *EM11.2.05
Dynamic R ON Dispersion in Carbon Doped GaN Power Transistors—Importance of Leakage Paths

Michael Uren 1 , Martin Kuball 1

1 University of Bristol Bristol United Kingdom

Show Abstract

2016-11-29   Show All Abstracts

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Mitsuru Funato, Kyoto University
Martin Kuball, Univ of Bristol
Matteo Meneghini, University of Padova
EM11.3: Oxide Power Electronics
Session Chairs
Ramon Collazo
Martin Kuball
Tuesday AM, November 29, 2016
Hynes, Level 2, Room 201

9:30 AM - *EM11.3.01
Molecular Beam Epitaxy Growth of Ga 2O 3 Thin Films on β-Ga 2O 3 (001) Substrates

Yoshiaki Nakata 1 , Man Hoi Wong 1 , Akito Kuramata 2 , Shigenobu Yamakoshi 2 , Masataka Higashiwaki 1

1 National Institute of Information and Communications Technology Tokyo Japan, 2 Tamura Corporation Sayama Japan

Show Abstract

10:00 AM - EM11.3.02
Growth of Metastable ε- and α- Ga 2O 3 by PAMBE

Max Kracht 1 , Alexander Karg 1 , Joerg Schoermann 1 , Martin Eickhoff 1

1 Institute of Experimental Physics I, Justus Liebig University Giessen Giessen Germany

Show Abstract

10:15 AM - EM11.3.03
Epitaxial β-Ga 2O 3 Thin Film by Metal Organic Chemical Vapor Deposition

Fikadu Alema 1 , Brian Hertog 1 , Oleg Ledyaev 1 , Grant Thoma 1 , Ross Miller 1 , Andrei Osinsky 1 , Partha Mukhopadhyay 2 , Winston V. Schoenfeld 2

1 Agnitron Technology Eden Prairie United States, 2 CREOL, The College of Optics and Photonics University of Central Florida Orlando United States

Show Abstract

10:30 AM - EM11.3.04
Mg Ion Implantation Technology for Vertical Ga 2O 3 Power Devices

Man Hoi Wong 1 , Ken Goto 2 3 , Rie Togashi 3 , Hisashi Murakami 3 , Yoshinao Kumagai 3 , Akito Kuramata 2 , Shigenobu Yamakoshi 2 , Masataka Higashiwaki 1

1 National Institute of Information and Communications Technology Koganei, Tokyo Japan, 2 Tamura Corporation Sayama, Saitama Japan, 3 Tokyo University of Agriculture and Technology Koganei, Tokyo Japan

Show Abstract

10:45 AM - EM11.3.05
Ga Vacancies and Electrical Compensation in Ga 2O 3

Filip Tuomisto 1 , Esa Korhonen 1 , Gunter Wagner 2 , Michele Baldini 2

1 Aalto University Aalto Finland, 2 Leibniz Institute for Crystal Growth Berlin Germany

Show Abstract

11:00 AM - EM11.3
BREAK

11:30 AM - EM11.3
OPEN DISCUSSION

Show Abstract

11:45 AM - EM11.3.07
Demonstration of 2-Dimensional β-Ga2O3 Solar-Blind Photodetectors

Sooyeoun Oh 1 , Janghyuk Kim 1 , Gwangseok Yang 1 , Hong-Yeol Kim 1 , Jihyun Kim 1

1 Korea University Seoul Korea (the Republic of)

Show Abstract

12:00 PM - EM11.3.08
Atomic-Layer-Deposition Temperature Effect on Current Conduction in Al 2O 3 Films as Investigated Using Space-Charge-Controlled Field Emission Model

Atsushi Hiraiwa 1 2 , Daisuke Matsumura 3 , Hiroshi Kawarada 3 1 4

1 Research Organization for Nano and Life Innovation Waseda University Shinjuku Japan, 2 Institute of Materials and Systems for Sustainability Nagoya University Shinjuku Japan, 3 Faculty of Science and Engineering Waseda University Shinjuku Japan, 4 The Kagami Memorial Laboratory for Materials Science and Technology Waseda University Shinjuku Japan

Show Abstract