2018 MRS Fall Meeting Home

Symposium EP08—Ultra-Wide-Bandgap Materials and Devices

Research in the field of ultra-wide-bandgap semiconductors has continued to expand in recent years. Notably, materials such as gallium oxide, diamond, and aluminum nitride with bandgaps exceeding that of gallium nitride (3.4 eV) constitute the next frontier in semiconductor physics research. In many cases, the fundamental properties of these materials are not well known, for example the physics of high-energy carrier scattering processes responsible for electrical breakdown. Further, fundamental challenges such as the synthesis of high-quality substrates, effective impurity doping during epitaxial growth, the formation of low-resistance ohmic contacts, and the integration of insulators with such semiconductors (which are close to being insulators themselves) present challenges in terms of device fabrication. Thus, while such materials hold great promise for applications ranging from optoelectronic emitters and detectors, to more compact and efficient energy converters, to higher-power high-frequency amplifiers, to advances in quantum information science, many materials issues must be resolved before such ultra-wide-bandgap semiconductors can reach maturity and have a significant impact. This symposium will cover a broad range of topics related to the materials science and device physics of ultra-wide-bandgap materials, with an eye towards the applications of the materials that are driving research in the field. Topics of current interest in the traditional wide-bandgap materials will also be considered. For example, the lack of an effective means to perform selective-area doping of gallium nitride has to date imposed severe limitations on the fabrication of vertical-architecture power switching devices, and the efficiency droop problem continues to hinder solid-state lighting despite its successful and widespread commercialization.

Topics will include:

  • Bulk crystals and substrates
  • Epitaxial growth
  • Point, line, and planar defects
  • Doping
  • Novel polarization effects and utilization in devices
  • Device performance and reliability
  • Low-dimensional structures
  • Carrier recombination dynamics
  • Gate and passivation dielectrics
  • Thermal properties
  • Advanced materials characterization techniques
  • A tutorial complementing this symposium is tentatively planned.

Invited Speakers:

  • Jocelyn Achard (Paris 13 University, France)
  • Elaheh Ahmadi (University of California, Santa Barbara, USA)
  • Vincenzo Fiorentini (University of Cagliari, Italy)
  • Timothy Grotjohn (Michigan State University, USA)
  • Ken Haenen (Hasselt University, Belgium)
  • Mutsuko Hatano (Tokyo Institute of Technology, Japan)
  • Masataka Higashiwaki (National Institute of Communications Technology, Japan)
  • Klaus Irmscher (Leibniz Institute for Crystal Growth, Germany)
  • Makoto Kasu (Saga University, Japan)
  • Hiroshi Kawarada (Waseda University, Japan)
  • Asif Khan (University of South Carolina, USA)
  • Ji Hyun Kim (Korea University, Republic of Korea)
  • David Meyer (U.S. Naval Research Laboratory, USA)
  • Suzanne Mohney (The Pennsylvania State University, USA)
  • Julien Pernot (Grenoble University, France)
  • Fan Ren (University of Florida, USA)
  • Matthias Schreck (University of Augsburg, Germany)
  • Zlatko Sitar (North Carolina State University, USA)
  • Xutang Tao (Shandong University, China)
  • Peide Ye (Purdue University, USA)

Symposium Organizers

Robert Kaplar
Sandia National Laboratories
505-844-8285, rjkapla@sandia.gov

Mark Hollis
Massachusetts Institute of Technology - Lincoln Laboratory
781-981-7842, hollis@ll.mit.edu

David Moran
University of Glasgow
United Kingdom
44-141-330-4106, david.moran@glasgow.ac.uk

Keywords for Abstract Submission

Aluminum nitride, Diamond, Doping and defects, Epitaxy, Gallium oxide, Semiconductor, Ultra-wide-bandgap