Meetings & Events

1995 MRS Fall Meeting

November 27–December 1, 1995
Boston, Massachusetts
Meeting Chairs: Michael J. Aziz, Berend T. Jonker, Leslie J. Struble

Symposium CC—Spectroscopy of Heterojunctions

Chairs

Normal Tolk, Vanderbilt University
Giorgio Margaritondo, Ecole Polyotech Federale
R. Enrique Viturro, Xerox Webster Research Center

Tutorial: FTC: Novel Materials Research Opportunities at National Synchotron and Free Electron Laser Facilities

Instructors
Alan V. Barnes, Vanderbilt University
Waiman Ng, Advanced Light Source, Lawrence Berkeley Laboratory

Tuesday, November 28, 1:30 p.m. - 5:00 p.m.
Essex North Center (W)

*From X-ray to far-infrared spectroscopic studies of surfaces and interfaces
* Instrumental capabilities (optics, analyzers) and system integration
*Electronic states at surface and interfaces
*Formation of thin films and interfaces, cross sectional studies of homo and heterojunctions thin film structures
*Photogenerated carrier dynamics across semiconductor interfaces

This tutorial will introduce researchers to the physical concepts of the Free Electron Laser (FEL) and of the Scanning Photoemission Microscopy (SPEM) techniques. The commissioning of several new FEL facilities in the past decade has provided a new opportunity for materials research. A first goal of this tutorial is to introduce researchers to the capabilities and strengths of the FEL user facilities around the country. In addition, recent results have demonstrated the feasibility of high-resolution SPEM performed at Synchroton Radiation Centers. With dimensions of less than 100 nm already achieved, SPEM opens new domains to surface and materials science. A second aim of this tutorial is to educate the audience in SPEM, and in the new science that can be explored with it. A brief description of the types of research work in progress using these two advanced technics will be included. Issues of facility access, user support and beam time requests will be addressed.

*Invited Paper

SESSION CC1: THEORETICAL ASPECTS OF INTERFACES
Chair: Giorgio Margaritondo
Wednesday Morning, November 29
Yarmouth/Vineyard (M)

8:30 A.M. *CC1.1
THE Si-SiO2 INTERFACE CHALLENGES - A FIRST-PRINCIPLES APPROACH, Sokrates T. Pantelides and Madhavan Ramamoorthy, Vanderbilt University, Department of Physics and Astronomy, Nashville, TN.

9:00 A.M. CC1.2
REDUCTIONS IN Si-ATOM BOND STRAIN AT NITRIDED Si-SiO2 INTERFACES, G. Lucovsky, D.R. Lee, Z. Jing, North Carolina State University, Department of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, Raleigh, NC; C. Meyer, G. Lüpke and H. Kurz, RWTH, Institute for Semiconductor Electronics II, Aachen, Germany.

9:15 A.M. CC1.3
MOLECULAR QUANTUM CHEMICAL CALCULATIONS OF THE INTERFACE FORMATION BETWEEN AL, CA AND MG WITH POLY(PHENYLENEVINYLENE) (PPV) OLIGOMERS, V. Choong, Y. Park, Y. Gao, University of Rochester, Department of Physics and Astronomy, Rochester, NY; and B.R. Hsieh, Xerox Corporation, Webster, NY.

9:30 A.M. *CC1.4
BAND OFFSETS AT SEMICONDUCTOR HETEROJUNCTIONS FROM THEORETICAL ALCHEMY, Stefano Baroni, INFM, Istituto Nazionale di Fisica della Materia SISSA, Trieste, Italy and CECAM, Centre Europeen de Calcul Atomique et Moleculaire, Lyon, France.

10:00 A.M. BREAK

SESSION CC2: BAND OFFSETS AT
SEMICONDUCTOR HETEROSTRUCTURES
Chair: Giorgio Margaritondo
Wednesday Morning, November 29
Yarmouth/Vineyard (M)

10:45 A.M. *CC2.1
BAND OFFSETS AT HIGHLY STRAINED III-V HETEROJUNCTIONS, C. Ohler, Institut für Schicht- und Ionentechnik, Forschungszentrum, Jülich, Germany.

11:00 A.M. CC2.2
BAND OFFSET DETERMINATION IN TYPE I AND TYPE II SINGLE QUANTUM WELLS AND SUPERLATTICES, D.T. Emerson, J.A. Smart, K.L. Whittingham and J.R. Shealy, Cornell University, School of Electrical Engineering, Ithaca, NY.

11:15 A.M. CC2.3
STUDY OF LEVEL ALIGNMENTS IN STRAINED-LAYER GaInP QUANTUM WELL LASERS BY HIGH PRESSURE PHOTOLUMINESCENCE, T.M. Ritter, B.A. Weinstein, State University of New York, Buffalo, Department of Physics, Buffalo, NY; R. Enrique Viturro, Xerox-WCRT, Webster, NY; and D.P. Bour, Xerox-PARC, Palo Alto, CA.

11:30 A.M. CC2.4
BAND DISCONTINUITIES OF ZnSe/Si HETEROJUNCTION GROWN BY HYDROGEN RADICAL ASSISTED MOCVD, Yoshinori Hatanaka, Toru Aoki, Daiji Noda, Motohiko Morita and Yoichiro Nakanishi, Shizuoka University, Research Institute of Electronics, Hamamatsu, Japan.

11:45 A.M. CC2.5
INFLUENCE OF THE INTERFACIAL LAYER AT THE a-Si/c-Si BOUNDARY ON THE PHOTOGENERATED CARRIER TRANSPORT, Boris G. Budaguan, Alexei A. Sherchenkov and Arcady A. Aivazov, Moscow Institute of Electronic Technology, Zelenograd, Russia.

SESSION CC3: NOVEL EXPERIMENTAL TECHNIQUES I
Chair: Norman Tolk
Wednesday Afternoon, November 29
Yarmouth/Vineyard (M)

1:30 P.M. *CC3.1
DEFECT VIBRATIONS AT INTERFACES, James T. McKinley, Vanderbilt University, Department of Physics and Astronomy, Nashville, TN.

2:00 P.M. CC3.2
PHOTOGENERATED HOT ELECTRON DYNAMICS AT GaAs (100) SURFACES, S. Diol, C. Miller, Y. Gao and R.J.D. Miller, University of Rochester, Center for Photoinduced Charge Transfer, Department of Chemistry, Rochester, NY.

2:15 P.M. *CC3.3
INTERNAL PHOTOEMISSION: A NOVEL "OLD" TECHNIQUE TO STUDY HETEROSTRUCTURES, Carlo Coluzza, Universita di Roma "La Sapienza", Dipartimento di Fisica, Roma, Italy.

2:45 P.M. CC3.4
REVERSE SURFACE PHOTOVOLTAGE EFFECTS IN GaAs SURFACE QUANTUM WELLS, C. Cameron Miller, J. Cao, R.J.D. Miller, Y. Gao, University of Rochester, Center for Photoinduced Charge Transfer, Department of Chemistry, Rochester, NY; C.A. Schmuttenmaer, Yale University, Department of Chemistry, New Haven, CT; and D.A. Mantell, Xerox Webster Research Center, Webster, NY.

3:00 P.M. BREAK

SESSION CC4: NOVEL EXPERIMENTAL TECHNIQUES II
Chair: Norman Tolk
Wednesday Afternoon, November 29
Yarmouth/Vineyard (M)

3:30 P.M. *CC4.1
NANOMETER SCALE SEMICONDUCTOR SURFACE CHARACTERIZATION BY SCANNING PROBE MICROSCOPY, C.C. Williams, University of Utah, Department of Physics, Salt Lake City, UT.

4:00 P.M. CC4.2
DIRECT IMAGING OF SCHOTTKY-BARRIER INHOMOGENEITY AT EPITAXIAL Al/Si(111) INTERFACES BY SCANNING INTERNAL-PHOTOEMISSION MICROSCOPY, Shuji Miyazaki and Tsugunori Okumura, Tokyo Metropolitan University, Electronics and Inform. Eng., Tokyo, Japan.

4:15 P.M. CC4.3
MEASUREMENT OF SCATTERING MECHANISMS AT AU/SI(100) INTERFACES BY TEMPERATURE DEPENDENT BALLISTIC ELECTRON EMISSION MICROSCOPY, C.A. Ventrice Jr., V.P. LaBella, H.-P. Yu and L.J. Schowalter, Rensselaer Polytechnic Institute, Department of Physics, Troy, NY.

4:30 P.M. CC4.4
OPTICAL AND SURFACE PHONON CHARACTERIZATION OF InP, GaP and GaAs QUANTUM DOTS CONFINED IN DIELECTRIC HOSTS, D.O. Henderson, Y.S. Tung, A. Ueda, R. Mu, Fisk University, Physics Department, Nashville, TN; C.W. White, R.A. Zuhr and Jane G. Zhu, Oak Ridge National Laboratory, Oak Ridge, TN.

4:45 P.M. CC4.5
CORRELATION BETWEEN THE QUANTIZED ENERGIES AND THE PHOTOVOLTAIC SPECTRA FOR A GaAs/AlGaAs QUANTUM WELL STRUCTURE, O.L. Russo, New Jersey Institute of Technology, Department of Physics, Newark, NJ; V. Rehn, T.W. Nee, Michelson Laboratory, China Lake, CA; and K.A. Dumas, California Institute of Technology, Jet Propulsion Laboratory, Pasadena, CA.

SESSION CC5: ELECTRONIC PROPERTIES OF
SEMICONDUCTOR HETEROSTRUCTURES
Chair: R. Enrique Viturro
Thursday Morning, November 30
Yarmouth/Vineyard (M)

8:30 A.M. *CC5.1
DEEP LEVEL LIMINESCENCE SPECTROSCOPY OF SEMI-CONDUCTOR HETEROJUNCTIONS, L.J. Brillson, A.D. Raisanen, X. Yang, Xerox Wilson Center for Research and Technology, Webster, NY; R. Goldman, H.H. Wieder, K. Kavanagh, University of California, San Diego, Department of Electrical Engineering, La Jolla, CA; A. Franciosi, L. Vanzetti and L. Sorba, TASC-IFM, Trieste, Italy and University of Minnesota, Department of Chemical Engineering and Materials Science, Minneapolis, MN.

9:00 A.M. CC5.2
EXPERIMENTAL AND THEORETICAL STUDY OF RADIATIVE RECOMBINATION PROCESSES IN A MODULATION DOPED GaAs/AlGaAs HETEROINTERFACE, T.L. Lundström, J.P. Bergman, P.O. Holtz, B. Monemar, Linköping University, Department of Physics and Measurement Technology, Linköping, Sweden; M. Sundaram, J.L. Merz and A.C. Gossard, University of California at Santa Barbara, QUEST Center, Santa Barbara, CA.

9:15 A.M. CC5.3
PHOTOMODULATION RAMAN SCATTERING SPECTROSCOPY OF ZnSe/GaAs(001) HETEROSTRUCTURES INTERFACE, H. Talaat, L. Elissa, S. Negm, Ain Shams University, Faculty of Science, Cairo, Egypt; and E. Burstein, University of Pennsylvania, Philadelphia, PA.

9:30 A.M. CC5.4
MAGNETO LUMINESCENCE OF MODULATION DOPED InP/InGaAs HETEROJUNCTIONS, T. Lundström, J. Dalfors, Q.X. Zhao, P.O. Holtz, B. Monemar, Linköping University, Department of Physics and Measurement Technology, Linköping, Sweden; J. Wallin and G. Landgren, The Royal Institute of Technology, Department of Electronics, Kista, Sweden.

9:45 A.M. CC5.5
OPTICALLY-DETECTED NUCLEAR MAGNETIC RESONANCE (ODNMR) STUDY OF III-V SEMICONDUCTORS, S.W. Brown, E.R. Glaser, D.S. Katzer and T.A. Kennedy, Naval Research Laboratory, Washington, DC.

10:00 A.M. BREAK

SESSION CC6: INTERFACES OF
ORGANIC SEMICONDUCTORS
Chair: R. Enrique Viturro
Thursday Morning, November 30
Yarmouth/Vineyard (M)

10:30 A.M. *CC6.1
ELECTRON SPECTROSCOPY OF INTERFACES BETWEEN METALS OR GaAs AND THE ORGANIC MOLECULAR SEMICONDUCTOR PTCDA, A. Kahn, Princeton University, Department of Electrical Engineering, Princeton, NJ.

11:00 A.M. CC6.2
INTERFACE FORMATION PROCESS BETWEEN CA AND A PHENYLENE VINYLENE OLIGOMER, Y. Park, E. Ettedgui, V. Choong, Y. Gao, University of Rochester, Department of Physics and Astronomy, Rochester, NY; B.R. Hsieh, Xerox Corporation, Webster, NY; T. Wehrmeister and K. Mullen, MPI Mainz, Mainz, Germany.

11:15 A.M. CC6.3
SCHOTTKY BARRIER FORMATION AT THE Ca/POLY(p-PHENYLENE VINYLENE) INTERFACE AND ITS ROLE IN TUNNELING AT THE INTERFACE, E. Ettedgui, H. Razafitrimo, Y. Gao, University of Rochester, Department of Physics and Astronomy, Rochester, NY; B.R. Hsieh, Xerox Corporation, Webster, NY; and M.W. Ruckman, Brookhaven National Laboratory, Physics Department, Upton, NY.

11:30 A.M. CC6.4
CLASSIFICATION OF CONTACT BEHAVIOR ON TRANSPORT POLYMERS FROM TIME RESOLVED ANALYSIS OF INJECTIONS, Martin A. Abkowitz, Xerox Corporation, Webster, NY.



11:45 A.M. CC6.5
JUNCTION RECTIFYING BEHAVIOR BETWEEN POLYMER MPA AND SEMICONDUCTOR CdS, A.D. Sagar, C.D. Lokhande, M.M. Salunkhe, Shivaji University, Department of Physics, Kolhapur, India; Y.O. Wang and S.S. Mohite, Southwest Missouri State University, Department of Physics and Astronomy, Springfield, MO.

SESSION CC7: ELECTRONIC PROPERTIES OF
SEMICONDUCTOR HETEROSTRUCTURES
Chair: R. Enrique Viturro
Thursday Afternoon, November 30
Yarmouth/Vineyard (M)

MRS MEDAL AWARD PRESENTATION
1:30 P.M. *CC7.1
BANDGAP ENGINEERING OF COMPOSITIONALLY GRADED SEMICONDUCTORS: PHYSICS AND APPLICATIONS FOR ELECTRONICS AND PHOTONICS, Federico Capasso, AT&T Bell Laboratories, Murray Hill, NJ.

2:00 P.M. CC7.2
WIDE GAP II-VI HETEROJUNCTIONS AND BLUE-GREEN LASERS, A. Franciosi, Laboratorio TASC-INFM, Trieste, Italy, and University of Minnesota, Department of Chemical Engineering, Minneapolis, MN.

2:30 P.M. CC7.3
ON THE PHOTOEMISSION FROM SEMICONDUCTOR SUPERLATTICES WITH GRADED STRUCTURES IN THE PRESENCE OF QUANTIZING MAGNETIC FIELD, Kamakhya P. Ghatak, Calcutta University, Department of Electronic Science, Calcutta, India; D.K. Basu, Calcutta University, Department of Applied Physics, Calcutta, India; and S.N. Biswas, RWTH Aachen, Aachen, Germany.

3:00 P.M. BREAK

3:30 P.M. *CC7.4
HETEROSTRUCTURE CONTACT TO BLUE-GREEN LASER DIODES, Jung Han, R.L. Gunshor, Purdue University, School of Electrical and Computer Engineering, West Lafayette, IN; and A.V. Nurmikko, Brown University, Division of Engineering, Providence, RI.

4:00 P.M. CC7.5
SCHOTTKY BARRIER HEIGHTS AT ErAs/GaAs INTERFACES, Andrey G. Petukhov, South Dakota School of Mines and Technology, Department of Physics, Rapid City, SD; Walter R.L. Lambrecht, Case Western Reserve University, Department of Physics, Cleveland, OH.

4:15 P.M. CC7.6
ELECTRONIC STRUCTURE AND SCHOTTKY BARRIERS OF SiC/TiC {111} INTERFACES, Sergev N. Rashkeev, Walter R.L. Lambrecht and Benjamin Segall, Case Western Reserve University, Department of Physics, Cleveland, OH.

4:30 P.M. CC7.7
CHANGE MECHANISM OF TUNNEL TRANSPARENCY OF Me-n-InP SCHOTTKY BARRIERS TRANSITIONAL LAYER, Gennady S. Korotchenkov, Technical University of Moldova, Laboratory of Microelectronics, Chisinau, Moldova.

4:45 P.M. CC7.8
SURFACE STATES INVESTIGATION ON THE BASE OF INJECTION PHENOMENIA IN THIN SEMICONDUCTORS, Petr S. Smertenko, Sergei V. Svechnikov, ISP NASU, Kiev, Ukraine; and Igor N. Konovalov, IMS NASU, Kiev, Ukraine.

The following exhibitors have identified their products and services as directly related to your research:

Products and Services
A&N Corporation
APD Cryogenics, Inc.
Balzers
Cryomech, Inc.
Digital Instruments
Huntington Mechanical Laboratories
IBM Analytical Services
Melles Griot
Omicron Associates
Philips Electronic Instruments Co.
Plasmaterials, Inc.
Princeton Research Instruments
RJ Lee Instruments, Ltd.
Staib Instruments, Inc.

See page 6 for a list of companies exhibiting books and software and a complete list of exhibitors.