Symposium DD—Diamond For Electronic Applications
Chairs
Pehr Pehrsson, Naval Research Laboratory
Alan Collins, King's College London
Trevor Humphreys, Research Triangle Institute
Kumar Das, Tuskegee University
Charles Beetz, Fairfield University
David Dreifus, Kobe Steel USA, Inc.
NOTE: The Tutorial for this Symposium is Tuesday afternoon.
*Invited Paper
SESSION DD1: GROWTH, KINETICS AND MODELING
Chairs: Roy Gat and Yogesh Vohra
Monday Morning, November 27
Constitution (S)
8:30 A.M. *DD1.1
DIAMOND GROWTH CHEMISTRY DURING ATMOSPHERIC-PRESSURE PLASMA CVD, S.L. Girshick
and J.W. Lindsay, University of Minnesota, Department of Mechanical
Engineering, Minneapolis, MN.
9:00 A.M. DD1.2
KINETICS AND MORPHOLOGY OF HOMOEPITAXIAL CVD GROWTH ON DIAMOND (100) AND (111),
Robin E. Rawles, Rice University, Department of Chemistry, Houston, TX; William
G. Morris and Mark P. D'Evelyn, GE Corporate Research and Development,
Schenectady, NY.
9:15 A.M. DD1.3
GROWTH OF DIAMOND FILMS FROM C-H-O MIXTURES, I.J. Ford, University of Oxford,
Materials Modelling Laboratory, Department of Materials, Oxford, United
Kingdom.
9:30 A.M. DD1.4
CARBON DIMER CHEMISTRY ON DIAMOND (111) SURFACES FROM MOLECULAR DYNAMICS
SIMULATIONS, Steven M. Valone, Los Alamos National Laboratory, Los Alamos,
NM.
9:45 A.M. DD1.5
INFLUENCES OF CnH AND Cn SPECIES IN THE DIAMOND FILMS GROWTH ON SILICON
SUBSTRATE, I. Doi, J.D.E. de Sousa, UNICAMP/FEE, DMCSI, Sao Paulo, Brazil; and
V. Baranauskas, UNICAMP/FEE, DSIF, Sao Paulo, Brazil.
10:00 A.M. BREAK
10:30 A.M. *DD1.6
DIAMOND FILM QUALITY: THE EFFECTS OF THE GAS PHASE SPECIES CONCENTRATIONS ON
THE RAMAN SPECTRA, Stephen J. Harris, Anita M. Weinen and Steven Prawer,
General Motors R&D Center, Physical Chemistry Department, Warren, MI.
11:00 A.M. DD1.7
PRECIPITATION OF DIAMOND BELOW 1 ATM FROM METAL-C-H LIQUIDS, Rustum Roy, K.
Cherian, A. Badzian, J.P. Cheng, C. Langlade, H. Dewan and W. Drawl,
Pennsylvania State University, Intercollege Materials Research Laboratory,
University Park, PA.
11:15 A.M. DD1.8
PATTERN EFFECTS ON GROWTH RATE IN SELECTIVELY DEPOSITED DIAMOND FILMS, Michael
C. Kwan and Karen K. Gleason, Massachusetts Institute of Technology, Department
of Chemical Engineering, Cambridge, MA.
11:30 A.M. DD1.9
RECENT PROCESS DEVELOPMENTS IN CVD DIAMOND DEPOSITION, Roy Gat, Jeffrey Casey,
Morris Chung and Evelio Sevillano, ASTeX, Diamond and Process Products, Woburn,
MA.
11:45 A.M. DD1.10
THIN FILM DIAMOND GROWTH BY MOLECULAR BEAM EPITAXY, John S. Foord, Loh K. Ping,
University of Oxford, Physical Chemistry Laboratory, Oxford, United Kingdom;
and Richard B. Jackman, University College London, Department of Electronic and
Electrical Engineering, London, United Kingdom.
SESSION DD2: HOMOEPITAXY, HETEROEPITAXY AND
ORIENTED GROWTH
Chairs: John C. Angus and John B. Posthill
Monday Afternoon: November 27
Constitution (S)
1:30 P.M. *DD2.1
TOWARDS LARGE AREA DIAMOND SUBSTRATES: THE MOSAIC PROCESS, Ger Janssen, John J.
Schermer and L.J. Giling, University of Nijmegen, Research Institute for
Materials, Nijmegen, Netherlands.
2:00 P.M. DD2.2
DEVELOPMENT OF EPITAXIAL, TILING AND CUTTING PROCESSES FOR A DIAMOND SINGLE
CRYSTAL WAFER TECHNOLOGY, J.B. Posthill, D.P. Malta, T.P. Humphreys, G.C.
Hudson, R.E. Thomas, R.A. Rudder and R.J. Markunas, Research Triangle
Institute, Research Triangle Park, NC.
2:15 P.M. DD2.3
HOMOEPITAXIAL MOSAIC GROWTH AND LIFTOFF OF DIAMOND FILMS, Pehr E. Pehrsson,
Mike Marchywka, James E. Butler, Naval Research Division, Chemistry Division,
Washington, DC; Terri McCormick, GeoCenters, Inc., Suitland, MD; W. Brock
Alexander, NRC/NRL Postdoctoral Fellow, Naval Research Laboratory, Washington,
DC; David Black, National Institute of Standards and Technology, Gaithersburg,
MD; and Steven Prawer, University of Melbourne, School of Physics, Melbourne,
Australia.
2:30 P.M. DD2.4
CHARACTERIZATION OF STRESS AND MOSACITY IN HOMOEPITAXIAL DIAMOND FILMS, W.
Brock Alexander, P.H. Holloway, University of Florida, Department of Materials
Science and Engineering, Gainesville, FL; P. Doering and R. Linares, LMA Inc.,
Medfield, MA.
2:45 P.M. DD2.5
HIGH TEMPERATURE HOMOEPITAXIAL DIAMOND FILM GROWTH: DEFECTS AND DOPING, Thomas
S. McCauley and Yogesh K. Vohra, University of Alabama, Birmingham, Department
of Physics, Birmingham, AL.
3:00 P.M. BREAK
3:30 P.M. *DD2.6
HETEROEPITAXIAL NUCLEATION OF DIAMOND, Brian R. Stoner, Peter J. Ellis, Jeffrey
T. Glass, Kobe Steel USA Inc., Electronic Materials Center, Research Triangle
Park, NC; Michael T. McClure and S.D. Wolter, North Carolina State University,
Department of Materials Science and Engineering, Raleigh, NC.
4:00 P.M. DD2.7
CVD DIAMOND: THE IMPACT OF SMALL NITROGEN ADMIXTURES ON GROWTH AND PROPERTIES,
C. Wild, W. Müller-Sebert, E. Wörner, R. Locher and P. Koidl,
Fraunhofer-Institut für Angewandte Festkörperphysik, Freiburg,
Germany.
4:15 P.M. DD2.8
THE INTERFACES OF HETEROEPITAXIAL DIAMOND GRAINS TO (001) SILICON SUBSTRATES,
C.L. Jia, K. Urban, Institut für Festkörperforschung,
Forschungszentrum Jülich GmbH, Jülich, Germany; and X. Jiang,
Fraunhofer-Institut für Schicht- und Oberflächentechnik,
Braunschweig, Germany.
4:30 P.M. DD2.9
ON THE OPTIMIZED NUCLEATION OF NEAR-SINGLE-CRYSTAL CVD DIAMOND FILM, L.C. Chen,
National Taiwan University, Center for Condensed Matter Sciences, Taipei,
Taiwan; J.Y. Wu, C.C. Juan, Institute of Atomic and Molecular Sciences,
Academia Sinica, Taipei, Taiwan; and K.H. Chen, National Taiwan University,
Center for Condensed Matter Sciences, Taipei, Taiwan and Institute of Atomic
and Molecular Sciences, Academia Sinica, Taipei, Taiwan.
4:45 P.M. DD2.10
THE COMPETITION BETWEEN DISORDERED CARBON FORMATION AND DIAMOND NUCLEATION
DURING BIAS-ENHANCED CVD, Rachael E. Boekenhauer and Brian W. Sheldon, Brown
University, Division of Engineering, Providence, RI.
SESSION DD3: THERMAL AND OPTICAL PROPERTIES
Chair: Roger W. Pryor
Tuesday Morning, November 28
Constitution (S)
9:00 A.M. *DD3.1
MEASUREMENT OF THERMAL DIFFUSIVITY OF CVD DIAMOND FILMS BY MODIFIED AC
CALORIMETRY, Akikazu Maesono, ULVAC Sinku Riko, Yokohama, Japan; and Ronald P.
Tye, ULVAC Sinku Riko, Andover, MA. 9:30 A.M. DD3.2
DIAMOND HEAT SINKS FOR HIGH TEMPERATURE ELECTRONICS: SIMULATION, AND THERMAL
ANALYSIS, Nickolaos Strifas and Aris Christou, University of Maryland,
Department of Materials and Nuclear Engineering, College Park, MD.
9:45 A.M. DD3.3
MODELLING A DIAMOND FILM HEATSINK FOR GaAs LASERS, Geoffrey K. Reeves and
Sanlin Shi, Royal Melbourne Institute of Technology, Department of
Communications and Electronic Engineering, Melbourne, Australia.
10:00 A.M. BREAK
10:00 A.M. DD3.4
TEM INVESTIGATION OF GOLD METALLIZATION AND CVD DIAMOND INTERFACE FOR THERMAL
MANAGEMENT APPLICATIONS, Changmo Sung, Seung-Jun Jeon, University of
Massachusetts, Lowell, Department of Chemical and Nuclear Engineering, Lowell,
MA; H.A. Naseem, J. Glezen, W.D. Brown and A.P. Malshe, University of Arkansas,
High Density Electronics Center, Fayetteville, AR.
10:45 A.M. *DD3.5
LUMINESCENCE CHARACTERIZATION OF DIAMOND, A. Zaitsev, Byelorussian State
University, Minsk, Belarus.
11:15 A.M. DD3.6
A STUDY OF FREE- AND BOUND-EXCITON RECOMBINATION IN DEVICE-QUALITY DIAMOND,
Sarah J. Sharp and Alan T. Collins, King's College London, Wheatstone Physics
Laboratory, London, United Kingdom.
11:30 A.M. DD3.7
LASER INDUCED LUMINESCENCE SPECTRA AND RELAXATION TIMES OF Si DOPED CVD
DIAMONDS, A.V. Turukhin, A. Carpenter, C.-H. Liu, W. Sha, A.A. Gorokhovsky,
R.R. Alfano, City College of New York, Physics Department, New York NY; and W.
Phillips, Crystallume, Santa Clara, CA.
11:45 A.M. DD3.8
NEW RED PHOTOLUMINESCENCE BAND IN CVD DIAMOND, Richard J. Anderson, Sandia
National Laboratories, Livermore, CA; and Kevin Gray, Norton Diamond Film,
Northboro, MA.
TUTORIAL
FTd: ELECTRON EMISSION FROM DIAMOND
Instructors: Robert J. Nemanich, North Carolina State University
Keith Jamison, Si Diamond Technology
Tuesday, November 28, 1:30 p.m. - 5:00 p.m.
Constitution (S)
*Fundamentals of semiconductor surfaces: electron affinity and work function
* Field emission from diamond like materials
*Emission from negative electron affinity surfaces
*Measurement techniques
*Materials processing and characterization
*Device structures
A unique aspect of diamond is that electron emission can be stimulated
without high temperatures or high fields. This effect can potentially be
used in a wide range of devices including flat panel displays, high power
and high frequency electronics, and vacuum microelectronics. This tutorial
will review fundametals and materials aspects related to electron emission
from diamond and related semiconductors.
SESSION DD4: POSTER SESSION
Chair: Kumar Das
Tuesday Evening, November 28
8:00 P.M.
Grand Ballroom (S)
DD4.1 AES, XPS AND RAMAN CHARACTERIZATION OF SURFACE AND INTERFACIAL
PROPERTIES OF DIAMOND FILMS, J.C. Li, A.R. Krauss, D.M. Gruen, C.D. Zuiker and
R. Csencsits, Argonne National Laboratory, Materials Science and Chemistry
Division, Argonne, IL.
DD4.2 ELECTRONIC STRUCTURE OF POLYCRYSTALLINE PECVD DIAMOND SURFACES, T.P.
Humphreys, D.P. Malta, R.E. Thomas, J.B. Posthill, M.J. Mantini and R.J.
Markunas, Research Triangle Institute, Research Triangle Park, NC.
DD4.3 THE ROLE OF OXYGEN FOR PROMOTING SP3 BONDING IN DIAMOND-LIKE FILMS
PRODUCTION BY CVD METHOD, A.P. Dementjev, M.N. Petukhov and S.V. Belikov,
Kurchatove Institute, IRTM, Moscow, Russia.
DD4.4 DEFECT STRUCTURES IN AS-DEPOSITED AND ANNEALED ARC-JET CVD DIAMOND
FILMS, Philip M. Fabio, Norton Diamond Film, Northborough, MA.
DD4.5 NOVEL TECHNIQUE TO PRODUCE STRONGLY ADHERENT DIAMOND FILMS ON
FE- AND NI- BASE ALLOYS, Othon R. Monteiro, Zhi Wang, and Ian G. Brown,
University of California, Berkeley, Lawrence Berkeley Laboratory, Berkeley,
CA.
DD4.6 OPTICAL PROPERTIES OF DIAMOND-LIKE CARBON FILMS DEPOSITED BY LASER
ABLATION, C.H. Seager, T.A. Friedmann and D.E. Bliss, Sandia National
Laboratories, Albuquerque, NM.
DD4.7 BARRIER MODIFICATION IN AU/IIB SEMICONDUCTING DIAMOND CONTACTS, M.
Teklu and K. Das, Tuskegee University, Department of Electrical Engineering,
Tuskegee, AL.
DD4.8 NEGATIVE ELECTRON AFFINITY EFFECTS AND SCHOTTKY BARRIER HEIGHT
MEASUREMENTS OF METALS ON DIAMOND (100), (110) AND (111) SURFACES, P.K. Baumann
and R.J. Nemanich, North Carolina State University, Department of Physics,
Raleigh, NC.
DD4.9 THE ROLE OF CARBON SATURATION AND STRESSES EVOLVED DURING THE
NUCLEATION AND GROWTH OF DIAMOND FILMS ON Ni SUBSTRATES, Sumit Nijhawan, Susan
Jankovksy and Brian Sheldon, Brown University, Division of Engineering,
Providence, RI.
DD4.10 ESR OF DEFECTS IN SURFACE CONDUCTION LAYER ON CVD-DIAMOND FILMS, Y.
Show, M. Iwase and T. Izumi, Takai University, Faculty of Engineering,
Kanagawa, Japan.
DD4.11 UNEQUILIBRIUM PRICESSES IN NON-UNIFORM SEMICONDUCTING DIAMOND, David
Papas, Bijan K. Rao, VCU, Richmond, VA; Roman V. Zakharatchenko and Yuri V.
Vorobiev, Kiev Polytekhnik Institute, Kiev, Ukraine.
DD4.12 NANOSCALE MODIFICATION OF AMORPHOUS DIAMOND-LIKE CARBON FILM
SURFACES, T.W. Mercer, N.J. DiNardo, Drexel University, Department of Physics,
Philadelphia, PA; J.P. Sullivan, T.A. Friedmann, M.P. Siegal, Sandia National
Laboratories, Albuquerque, NM; and L.J. Martinez-Miranda, University of
Maryland, College Park, MD.
DD4.13 A STUDY OF EL AND TRANSPORT PROPERTIES OF CVD DIAMOND, C.
Manfredotti, F. Wang, P. Polesello, E. Vittone, F. Fizzotti, University of
Turin, Italian Exp. Phys. Department, Turin, Italy; and INFM; and Italy A.
Scacco, University "La Sapienza", Phys. Department, Roma, Italy.
DD4.14 HETERO-EPITAXY OF MONOCRYSTALLINE DIAMOND ON SILICON, Zhangda Lin,
Jie Yang, Kean Feng and Yan Chen, Chinese Academy of Sciences, Institute of
Physics, State Key Laboratory of Surface Physics, Beijing, China.
DD4.15 BOUNDARY LAYER TEMPERATURE PROFILE IN DIAMOND CVD BY LASER-INDUCED
FLUORESCENCE, Qingyu Wang, Jon W. Linday and David L. Hofeldt, University of
Minnesota, Mechanical Engineering, Minneapolis, MN.
DD4.16 DIAMOND NUCLEATION AND GROWTH ON MIRROR POLISHED SILICON WAFER
PRETREATED BY ION IMPLANTATION, Jie Yang, Zhangda Lin, Chinese Academy of
Sciences, Institute of Physics, State Key Laboratory of Surface Physics,
Beijing, China; Xaiowei Su, Dalian University of Technology, National
Laboratory for Materials Modification by Laser, Ion and Electron Beams, Dalian,
China.
DD4.17 EFFECTS OF SUBSTRATE BIAS ON THE NUCLEATION OF DIAMOND FILMS STUDIED
BY ATOMIC FORCE MICROSCOPY, G. Sánchez, M.C. Polo, W.L. Wang and J.
Esteve, Universitat de Barcelona, Dept. Física Aplicada i Electronica,
Barcelona, Spain.
DD4.18 CVD DIAMOND RADIATION DETECTORS, Kevin J. Gray, Norton Diamond Film
Northboro, MA.
DD4.19 ABOUT HOMOGENEITY OF CVD DIAMOND NUCLEAR PARTICLES DETECTORS, C.
Manfredotti, F. Fizzotti, E. Vittone and P. Pollesello, University of Torino,
Experimental Physics Department, Torino, Italy and INFN, Sezione di Torino,
Italy.
DD4.20 SURFACE CHEMISTRY AND ELECTRON AFFINITY ON SINGLE CRYSTAL DIAMOND,
Pehr E. Pehrsson, Naval Research Laboratory, Chemistry Division, Washington,
DC.
DD4.21 MEASUREMENTS AND MODELING OF THE OPTICAL CONSTANTS FOR ROUGH SURFACE
DIAMOND THIN FILMS, Z. Yin and F.W. Smith, City College of New York, Department
of Physics, New York, NY.
DD4.22 BONDING OF SILICON ON DIAMOND FILMS, W.D. Fan, K. Jagannadham and J.
Narayan, North Carolina State University, Department of Materials Science and
Engineering, Raleigh, NC.
DD4.23 HIGH QUALITY HOMOEPITAXIAL DIAMOND FILMS GROWN IN END-LAUNCH TYPE
REACTORS, Kazushi Hayashi, Electrotechnical Laboratory, Ibaraki, Japan;
Sadanori Yamanaka, University of Tsukuba, Faculty of Materials Science,
Ibaraki, Japan; Hideyo Okushi, Electrotechnical Laboratory, Ibaraki, Japan; and
Koji Kajimura, Electrotechnical Laboratory, Ibaraki, Japan and University of
Tsukuba, Faculty of Materials Science, Ibaraki, Japan.
DD4.24 HIGHLY ORIENTED NUCLEATION OF DIAMOND ON SILICON, Yoon-Kee Kim,
Ki-Young Lee and Jai-Young Lee, Korea Advanced Institute of Science and
Technology, Department of Materials Science and Engineering, Taejon, South
Korea.
DD4.25 PRESSURE DEPENDENCE OF GROWTH MODE OF HFCVD DIAMOND, Zhi-ming Yu and
Anders Flodström, Royal Institute of Technology, Materials Physics,
Stockholm, Sweden.
DD4.26 THE EFFECTS OF RADIATION ON POLYCRYSTALLINE DIAMOND FILMS, Salim A.
Khasawinah, The University of Missouri-Columbia, Columbia, MO; Galina Popovici,
Rockford Diamond, Champaign, IL; Mark Prelas, The University of
Missouri-Columbia, MO; and John Farmer, MURR, Columbia, MO.
DD4.27 PREPARATION OF DIAMOND-LIKE CARBON BY PULSED LASER DEPOSITION, Takeo
Matsui, Masako Yudasaka, Kentaro Imai, Yoshimasa Ohki and Susumu Yoshimura,
Pi-Electron Materials Project, ERATO, JRDC, Kawasaki, Japan.
DD4.28 PERSISTENT SPECTRAL HOLE BURNING OF Si DEFECTS IN CVD DIAMONDS, A.A.
Gorokhovsky, A.V. Turukhin, R.R. Alfano, City College of New York, Physics
Department, New York NY; and W. Phillips, Crystallume, Santa Clara, CA.
DD4.29 EPITAXIAL GROWTH OF DIAMONDS UNDER HYDROTHERMAL CONDITIONS, R. Roy,
D. Ravichandran, X-Z Zhao and A. Badzian, Pennsylvania State University,
Materials Research Laboratory, University Park, PA.
DD4.30 SYNTHESIS OF DOPED CVD DIAMOND FILM AND ITS APPLICATION AS ELECTRON
MATERIALS, Yaxin Wang, G.T. Mearini, A. Lamouri and R. Kusner, General Vacuum,
Inc., Cleveland, OH.
DD4.31 DIAMOND FILM CVD SYNTHESIS ON TITANIUM: EXPERIMENTAL EVIDENCE OF THE
INTERMEDIATE PHASES ON THE INTERFACE FILM/SUBSTRATE, Maria L. Terranova, Vito
Sessa, Università di "tor Vergata," Dipartimento di Scienze e Tecnologie
Chimiche, Roma, Italy; and Marco Rossi, Università "La Sapienza,"
Departimento di Energetica, Roma, Italy.
DD4.32 ELECTROCHEMICAL CHARACTERISTICS OF BORON-DOPED POLYCRYSTALLINE
DIAMOND FILM ELECTRODES, J.Z. Zhu, J.X. Wang, X.K. Zhang, G.X. Zhang and S.C.
Zou, Chinese Academy of Sciences, Shanghai Institute of Metallurgy, Shanghai,
China.
SESSION DD5: SURFACE PROPERTIES AND PROCESSING
Chairs: Pehr E. Pehrssom and Mark P. D'Evelyn
Wednesday Morning, November 29
Constitution (S)
8:30 A.M. *DD5.1
INFLUENCE OF SURFACE TERMINATING SPECIES ON ELECTRON EMISSION FROM DIAMOND
SURFACES, R.E. Thomas, T.P. Humphreys, D.P. Malta, M.J. Mantini, J.B. Posthill,
R.A. Rudder, G.C. Hudson and R.J. Markunas, Research Triangle Institute,
Research Triangle Park, NC.
9:00 A.M. DD5.2
THERMAL DESORPTION AND SURFACE CHEMISTRY STUDIES OF POLYCRYSTALLINE CVD DIAMOND
SUBSTRATES, Philip M. Fabio, Norton Diamond Film, Northborough, MA.
9:15 A.M. DD5.3
OBSERVATION OF A NEW PHASE ON THE HYDROGEN COVERED DIAMOND C(111)-SURFACE, G.
Lange, Th. Schaich, J.P. Toennies and Ch. Wöll, Max-Planck-Institut
für Strömungsforschung, Göttingen, Germany.
9:30 A.M. DD5.4
VIBRATIONAL AND ELECTRONIC SIGNATURES OF DIAMOND SURFACES, Michael Sternberg,
Thomas Köhler and Thomas Franenheim, University of Technology, Theoretical
Physics III, Chemnitz, Germany.
9:45 A.M. DD5.5
A THEORETICAL STUDY OF THE ENERGETICS AND VIBRATION SPECTRA OF OXYGENATED (100)
DIAMOND SURFACES, S. Skokov, B. Weiner and M. Frenklach, Pennsylvania State
University, Department of Materials Science and Engineering, University Park,
PA.
10:00 A.M. BREAK
10:30 A.M. DD5.6
REACTION OF DIAMOND SURFACES WITH HALOGEN-CONTAINING SPECIES, K. Larsson, J.-O.
Carlsson, Uppsala University, Institute of Chemistry, Uppsala, Sweden; and S.
Lunell, Uppsala University, Department of Quantum Chemistry, Uppsala,
Sweden.
10:45 A.M. DD5.7
FLUOROALKYL IODIDE PHOTODECOMPOSITION ON DIAMOND (100) - AN EFFICIENT ROUTE TO
THE FLUORINATION OF DIAMOND SURFACES, Vincent S. Smentkowski and John T. Yates
Jr., University of Pittsburgh, Department of Chemistry, Pittsburgh, PA.
11:00 A.M. DD5.8
HYDROGEN PLASMA TREATMENT OF NATURAL AND HOMOEPITAXIAL DIAMOND, Robin E.
Rawles, Rice University, Department of Chemistry, Houston, TX; Roy Gat, ASTEX
Inc., Woburn, MA; William G. Morris and Mark P. D'Evelyn, GE Corporate Research
and Development, Schenectady, NY.
11:15 A.M. DD5.9
METAL CATALYZED ETCHING OF DIAMOND WITH H2 AND CO2, C. Smith, C.J. Chu, J.L.
Margrave and R.H. Hauge, Rice University, Department of Chemistry, Houston,
TX.
11:30 A.M. DD5.10
LASER ANNEALING OF ION IMPLANTED DIAMOND, S. Prawer, D.N. Jamieson, R.J.
Walker, University of Melbourne, School of Physics, Victoria, Australia; and R.
Kalish, Solid State Institute Technion, Haifa, Israel.
11:45 A.M. DD5.11
SURFACE DAMAGE EFFECTS ON SECONDARY ELECTRON EMISSION FROM THE NEGATIVE
ELECTRON AFFINITY DIAMOND SURFACE, D.P. Malta, J.B. Posthill, T.P. Humphreys,
M.J. Mantini and R.J. Markunas, Research Triangle Institute, Research Triangle
Park, NC.
SESSION DD6: DEVICE RELATED CHARACTERIZATION
Chairs: Ger Janssen and Brad Fox
Wednesday Afternoon, November 29
Constitution (S)
1:30 P.M. *DD6.1
ELECTRICAL PROPERTIES OF DIAMOND FOR DEVICE APPLICATIONS, Bradley A. Fox,
Michelle L. Hartsell, Dean M. Malta, Henry A. Wynands, Glenn J. Tessmer and
David L. Dreifus, Kobe Steel USA Inc., Electronic Materials Center, Research
Triangle Park, NC.
2:00 P.M. DD6.2
ELECTRICAL PROPERTIES OF UNDOPED POLYCRYSTALLINE DIAMOND THIN FILMS ON SILICON,
Anders Jauhiainen, Stefan Bengtsson and Olof Engström, Chalmers University
of Technology, Department of Solid State Electronics, Göteborg, Sweden.
2:15 P.M. DD6.3
HIGH FIELD ELECTRICAL CONDUCTIVITY AND BREAKDOWN IN HETEROEPITAXIAL DIAMOND
FILMS, S. Schröppel, R. Hessmer, M. Schreck and B. Stritzker,
Universität Augsburg, Institut für Physik, Augsburg, Germany.
2:30 P.M. DD6.4
CORRELATION OF ELECTRICAL PROPERTIES WITH DEFECTS IN A HOMOEPITAXIAL CVD
DIAMOND, Mary Anne Plano, M. Dale Moyer, Miguel A. Moreno, Crystallume, Santa
Clara, CA; Sung Han, Los Alamos National Laboratory, Los Alamos, NM; Lawrence
S. Pan, Sandia National Laboratories, Livermore, CA; David Black, Hal Burdette,
National Institute of Standards and Technology, Materials Microstructure
Characterization Group, Gaithersburg, MD; Joel W. Ager III and Anthony Chen,
University of California, Berkeley, Lawrence Berkeley Laboratory, Berkeley,
CA.
2:45 P.M. DD6.5
PHOTOCONDUCTIVITY STUDIES OF CVD DIAMOND FILMS, E.-K. Souw, C. Szeles,
Brookhaven National Laboratory, Upton, NY; R.J. Meilunas, Northrop-Grumman
Corporation, Bethpage, NY; N.M. Ravindra and F.M. Tong, New Jersey Institute of
Technology, Newark, NJ.
3:00 P.M. DD6.6
TRANSPORT OF THE PHOTOCARRIERS IN POLYCRYSTALLINE CVD DIAMOND, Alexander S.
Vedeneev, Mikhail G. Ermakov, Olga N. Ermakova, Vladimir E. Sizov, Institute of
Radioengineering and Electronics of Russian Academy of Sciences, Moscow,
Russia; Boris V. Spitsyn, Leonid L. Bouilov, Galina A. Sokolina and Sergej V.
Bantsekov, Institute of Physical Chemistry of Russian Academy of Sciences,
Moscow, Russia.
3:15 P.M. BREAK
3:45 P.M. DD6.7
ELECTROCHEMICAL STUDIES OF BORON DOPED DIAMOND ELECTRODES, John C. Angus, Case
Western Reserve University, Department of Electrical Engineering, Cleveland,
OH.
4:00 P.M. DD6.8
BORON DIFFUSION BEHAVIOR IN DIAMOND UNDER ELECTRIC FIELD, T. Sung, M.A. Prelas,
University of Missouri, Columbia, Department of Nuclear Engineering, Columbia,
MO; and G. Popovici, Rockford Diamond Technology, Columbia, MO.
4:15 P.M. DD6.9
ATOMIC AND ELECTRONIC STRUCTURE OF GRAIN BOUNDARY IN CHEMICAL VAPOR DEPOSITED
DIAMOND THIN FILM, Y. Zhang, H. Ichinose, Y. Ishida, K. Ito, University of
Tokyo, Department of Materials Science, Tokyo, Japan; and M. Nakanose, Nissan
Motor Corporation, Tokyo, Japan.
4:30 P.M. DD6.10
DETERMINATION OF HYDROGEN IN CVD DIAMOND BY NOTCHED NEUTRON SPECTRUM TECHNIQUE
AND FTIR, Fariborz Golshani, William H. Miller, Mark A. Prelas, Talun Sung,
University of Missouri-Columbia, Department of Nuclear Engineering, Columbia,
MO; Galina Popovici, Rockford Diamond Technology, Champaign, IL.
4:45 P.M. DD6.11
A STUDY OF DOPANTS IN DIAMOND USING ELECTRON PARAMAGNETIC RESONANCE
SPECTROSCOPY, M.E. Zvanut, Shigang Zhang, University of Alabama, Birmingham,
Department of Physics, Birmingham, AL; and W.E. Carlos, Naval Research
Laboratory, Washington, DC.
SESSION DD7: DEVICE STRUCTURES AND APPLICATIONS
Chair: Jim Davidson
Thursday Morning, November 30
Constitution (S)
8:30 A.M. *DD7.1
THE CURRENT AND FUTURE STATUS OF DIAMOND ELECTRONICS, P.R. Chalker and I.
Buckley Golder, AERE Harwell Laboratories, Didcot, United Kingdom.
9:00 A.M. *DD7.2
ELECTRON BREAM ACTIVATED DIAMOND DEVICES, Shiow-Hwa Lin and Lawrence H.
Sverdrup, ThermoTrex Corporation, San Diego, CA.
9:30 A.M. DD7.3
THIN FILM DIAMOND MISFETS USING CaF2 GATE INSULATORS, Tetsuro Maki, Yuzuru
Otsuka and Takeshi Kobayashi, Osaka University, Faculty of Engineering Science,
Department of Electrical Engineering, Osaka, Japan.
9:45 A.M. DD7.4
POLYCRYSTALLINE DIAMOND FOR DEVICES AND CIRCUITS, Peter B. Kosel, Don Wu, Aaron
Dalton, University of Cincinnati, Department of Electrical Engineering,
Cincinnati, OH; Sandra Carr, P.R. Emmert, Alan Garscadden, Wright Research and
Development Center, Wright Patterson AFB, OH; and R.L.C. Wu, K Systems Inc.,
Beavercreek, OH.
10:00 A.M. BREAK
SESSION DD8: SENSORS AND DIAMOND
VACUUM MICROELECTRONIC I
Chair: Wei Zhu
Thursday Morning, November 30
Constitution (S)
10:30 A.M. *DD8.1
EXAMPLES OF DIAMOND SENSING APPLICATIONS, J.L. Davidson and W. P. Kang,
Vanderbilt University, Department of Electrical Engineering, Nashville, TN.
11:00 A.M. *DD8.2
DIAMOND SENSORS AND VACUUM MICROELECTRONICS, L.S. Pan, Sandia National
Laboratories, Livermore, CA.
11:30 A.M. DD8.3
HIGH PERFORMANCE UV PHOTODETECTORS FROM THIN FILM DIAMOND, Robert D. McKeag,
Mike D. Whitfield, Simon SM Chan, Lisa YS Pang and Richard B. Jackman,
University College London, Department of Electronic and Electrical Engineering,
London, United Kingdom.
11:45 A.M. DD8.4
CVD DIAMOND DETECTORS FOR NUCLEAR RADIATIONS, P. Bergonzo, F. Foulon, C. Jany
and T. Pochet, LETI (CEA-Technologies Avancées)/DEIN/SPEC,
Gif-sur-Yvette, France.
SESSION DD8: SENSORS AND DIAMOND
VACUUM MICROELECTRONIC II
Chairs: Trevor Humphreys and Alan Collins
Thursday Afternoon, November 30
Constitution (S)
1:30 P.M. *DD8.5
DIAMOND AND DIAMOND LIKE MATERIALS FOR USE AS CATHODES IN FIELD EMISSION FLAT
PANEL DISPLAYS, Keith Jamison, Chenggang Xie, Richard Fink, Andy Ross, Mike
Kempel, Nalin Kumar, Leif Ferdin and Howard Schmidt, SI Diamond Technology,
Inc., Houston, TX.
2:00 P.M. DD8.6
POLYCRYSTALLINE DIAMOND BORON NITRIDE AND CARBON NITRIDE THIN FILM COLD
CATHODES, R.W. Pryor, Wayne State University, Institute for Manufacturing
Research, Detroit, MI.
2:15 P.M. DD8.7
AUGER ELECTRON SPECTROSCOPY OF THE CVD DIAMOND SURFACE UNDER ELECTRON EXPOSURE,
I.L. Krainsky, G.T. Mearini, J.A. Dayton Jr., NASA Lewis Research Center,
Cleveland, OH; A.G. Petukhov and M.G. Foygel, South Dakota School of Mines and
Technology, Department of Physics, Rapid City, SD.
2:30 P.M. DD8.8
THEORY OF ELECTRON EMISSION AND TRANSPORT IN DIAMOND, P.H. Cutler, N.M
Miskovsky, Z.-H. Huang and P. D'Ambrosio, Pennsylvania State University,
Department of Physics, University Park, PA.
2:45 P.M. BREAK
3:15 P.M. *DD8.9
ELECTRON FIELD EMISSION PROPERTIES OF DIAMOND, W. Zhu, G.P. Kochanski, S. Jin
and J. Rowe, AT&T Bell Laboratories, Murray Hill, NJ.
3:45 P.M. DD8.10
THE ROLE OF SURFACE CHEMISTRY ON THE ELECTRON EMISSION FROM DIAMOND SURFACES,
C.A. Fox, M.A. Kelly, Stanford University, Department of Materials Science and
Engineering, Stanford, CA; R. Cao, G. Vergara, P. Pianetta, W.E. Spicer,
Stanford Synchotron Radiation Laboratory, Stanford Linear Accelerator Center,
Stanford, CA; L. Pan and W. Hsu, Sandia National Laboratories, Livermore,
CA.
4:00 P.M. DD8.11
MICROSTRUCTURES OF AMORPHIC DIAMOND(TM) FILMS GROWN BY LASER ABLATION METHOD,
Hyunchul Sohn, Kannan M. Krishnan, Lawrence Berkeley Laboratory, Berkeley, CA;
and Richard Fink, SI Diamond Technology Inc., Austin, TX.
4:15 P.M. DD8.12
PHOTOEMISSION AND TUNNELING MICROSCOPY OF THIN DIAMOND FILMS, J.E. Rowe and W.
Zhu, AT&T Bell Laboratories, Murray Hill, NJ.
4:30 P.M. DD8.13
SECONDARY ELECTRON EMISSION STUDIES OF DIAMOND SURFACES, A. Shih, J. Yater, P.
Pehrsson, J. Butler, C. Hor and R. Abrams, Naval Research Laboratory,
Washington, DC.
4:45 P.M. DD8.14
APPLICATION OF DIAMOND FILMS TO FIELD EMITTERS, Chia-Fu Chen, Sheng-Hsiung Chen
and Shye-Yuh Leu, National Chiao Tung University, Institute of Materials
Science and Engineering, Hsinchu, Taiwan.
The following exhibitors have identified their products and services as
directly related to your research:
Products and Services
A&N Corporation
AJA International
Alcatel Vacuum Products, Inc.
ASTeX/Applied Science & Technology, Inc.
Commonwealth Scientific Corporation
Digital Instruments
E.A. Fischione Instruments, Inc.
Harris Diamond Corporation
Ion Tech, Inc.
MMR Technologies
n & k Technology, Inc.
New Focus, Inc.
Omicron Associates
Oxford Applied Research
Park Scientific Instruments
Philips Semiconductors/Materials Analysis Group
Plasmaterials, Inc.
Princeton Research Instruments
Staib Instruments, Inc.
Telemark
Thermionics Laboratory, Inc.
VAT, Inc.
Virginia Semiconductor, Inc.
Voltaix, Inc.
See page 6 for a list of companies exhibiting books and software and a complete
list of exhibitors.