Symposium A—Materials Modification and Synthesis by Ion Beam Processing
Chairs
Dale Alexander, Argonne National Laboratory
Nathan Cheung, University of California, Berkeley
Byungwoo Park, Georgia Institute of Technology
Wolfgang Skorupa, Research Center Rossendorf Inc
Symposium Support
- Applied Materials/Implant Division
- Argonne National Laboratory
- Danfysik A/S
- Diamond Semiconductor Group, Inc.
- Eaton Corporation, Semiconductor Equipment Division
- FHR GmbH
- Forschungszentrum Rossendorf e.V.
- High Voltage Engineering
- Varian Associates, Inc./Ion Implant Systems
- Wacker Siltronic AG
- Zentrum Mikroelektronik Dresden GmbH
* Invited paper
SESSION A1/B1: TRANSIENT ENHANCED DIFFUSION IN SILICON
Chairs: Kevin S. Jones and Mark E. Law
Monday Morning, December 2, 1996
America Center (W)
8:30 AM *A1.1/B1.1
CRITICAL DEFECT-DOPANT ISSUES FOR ION IMPLANTATION IN SILICON, John M. Poate, Bell Labs, Lucent Technologies, Murray Hill, NJ.
9:00 AM *A1.2/B1.2
TRANSIENT ENHANCED DIFFUSION OF DOPANTS IN PREAMORPHIZED Si LAYERS, Alain Claverie, CNRS, CETIES, Toulouse, FRANCE; C. Bonafos, Jim Omri, CNRS, CEMES, Toulouse, FRANCE.
9:30 AM A1.3/B1.3
TRANSIENT ENHANCED DIFFUSION OF BORON IN SILICON: THE INTERSTITIAL FLUX, Todd W. Simpson, Richard D. Goldberg, Ian V. Mitchell, Univ of Western Ontario, Dept of Physics, London, CANADA; Jean-Marc Baribeau, National Research Council, Inst for Microstructural Sciences, Ottawa, CANADA.
9:45 AM A1.4/B1.4
DOSE AND ENERGY DEPENDENCE OF THE DEFECT MICROSTRUCTURE AND TED IN LOW-ENERGY HIGH-DOSE ARSENIC IMPLANTED SILICON, V. Krishnamoorthy, Brian Beaudet, Kevin S. Jones, Univ of Florida, Dept of MS&E, Gainesville, FL; David Venables, North Carolina State Univ, Dept of MS&E, Raleigh, NC.
10:00 AM A1.5/B1.5
DAMAGE, DEFECTS AND DIFFUSION FROM 1-5 keV IMPLANTS IN SILICON, Aditya Agarwal, AT&T Bell Laboratories, Murray Hill, NJ; David J. Eaglesham, Dale C. Jacobson, Hans J. Gossman, Bell Labs, Lucent Technologies, Murray Hill, NJ; Yurl Erokhin, Eaton Corporation, Semiconductor Equipment Division, Beverly, MA; Tony E. Haynes, Oak Ridge National Laboratory, Oak Ridge, TN; John M. Poate, Bell Labs, Lucent Technologies, Murray Hill, NJ.
10:15 AM BREAK
10:45 AM A1.6/B1.6
MODELING OF DISLOCATION LOOP GROWTH AND TRANSIENT ENHANCED DIFFUSION IN SILICON FOR AMORPHIZING IMPLANTS
, Alp H. Gencer, Scott T. Dunham, Boston Univ, Dept of Electrical & Computer Engr, Boston, MA.
11:00 AM A1.7/B1.7
Ab Initio STUDIES OF CARBON IMPURITY DIFFUSION AND PAIRING IN Si
, Jing Zhu, Lawrence Livermore National Laboratory, Physics/H-Div, Livermore, CA; M. Lourdes Pelaz, Bell Labs, Lucent Technologies, Murray Hill, NJ; Tomas Diaz dela Rubia, Lawrence Livermore National Laboratory, Physics/H-Div, Livermore, CA; Christian Mailhiot, Lawrence Livermore National Laboratory, Physics & Space Technology, Livermore, California; George H. Gilmer, Bell Labs, Lucent Technologies, Dept of Silicon Processing, Murray Hill, NJ.
11:15 AM A1.8/B1.8
ATOMISTIC MODELLING OF TRANSIENT DIFFUSION OF BORON IN SILICON, Lourdes Pelaz, Bell Labs, Lucent Technologies, Dept of Silicon Processing Research, Murray Hill , NJ; George H. Gilmer, Bell Labs, Lucent Technologies, Dept of Silicon Processing, Murray Hill, NJ; Hans J. Gossman, Conor S. Rafferty, John M. Poate, Bell Labs, Lucent Technologies, Murray Hill, NJ; Martin Jaraiz, Univ de Valladolid, Facultad de Ciencias, Valladolid, SPAIN; Jing Zhu, Lawrence Livermore National Laboratory, Physics/H-Div, Livermore, CA; Tomas Diaz de la Rubia, Lawrence Livermore National Laboratory, Dept of Chem & Matls Science, Livermore, CA.
11:30 AM A1.9/B1.9
CHARGE-STATE DEFECT ENGINEERING OF SILICON DURING ION IMPLANTATION, Richard A. Brown, Chanrae Cho, Jallepally Ravi, George Rozgonyi, North Carolina State Univ, Dept of MS&E, Raleigh, NC; C. Woody White, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN.
SESSION A2/B2: DEFECTS AND DAMAGE EVOLUTION IN SILICON
Chairs: Harry A. Atwater and David J. Eaglesham
Monday Evening, December 2, 1996
America Center (W)
1:30 PM *A2.1/B2.1
MODELS OF EVOLUTION OF DAMAGE FROM ION IMPLANTATION INTO SILICON, Mark E. Law, Univ of Florida, Dept of Electrical & Computer Engr, Gainesville, FL; Kevin S. Jones, Univ of Florida, Dept of MS&E, Gainesville, FL; Aaron D Lilak, Earles K Susan, Univ of Florida, Electrical & Computer Engineering, Gainesville, FL.
2:00 PM *A2.2/B2.2
ROOM TEMPERATURE MIGRATION AND INTERACTION OF ION BEAM INJECTED DEFECTS IN CRYSTALLINE SILICON, Francesco Priolo, Univ di Catania, Dept of Physics, Catania, ITALY; V. Privitera, Salvatore Coffa, CNR, IMETEM, Catania, ITALY; Sebania Libertino, Univ di Catania, Dept of Physics, Catania, ITALY.
2:30 PM A2.3/B2.3
INSTRINSIC POINT DEFECTS IN CRYSTALLINE SILICON: A TIGHT-BINDING STUDY, Meijie Tang, Tomas Diaz de la Rubia, Lawrence Livermore National Laboratory, Dept of Chem & Matls Science, Livermore, CA.
2:45 PM A2.4/B2.4
DEFECT DIFFUSION DURING ANNEALING OF LOW-ENERGY ION-IMPLANTED SILICON: EXPERIMENTS AND SIMULATIONS, Peter J. Bedrossian, Lawrence Livermore National Laboratory, Dept of Matls Science & Tech, Livermore, CA; Tomas Diaz de la Rubia, Lawrence Livermore National Laboratory, Dept of Chem & Matls Science, Livermore, CA; Maria-Jose Caturla, Lawrence Livermore National Laboratory, Dept of Matls Science & Tech, Livermore, CA.
3:00 PM BREAK
3:30 PM A2.5/B2.5
INTERSTITIAL DEFECT EVOLUTION IN ION-IMPLANTED Si, Janet L. Benton, David J. Eaglesham, John M. Poate, Bell Labs, Lucent Technologies, Murray Hill, NJ; Per Kringhoj, Univ of Aarhus, Inst of Physics & Astronomy, Aarhus C, DENMARK; Salvatore Coffa, CNR, IMETEM, Catania, ITALY; Sebania Libertino, Univ di Catania, Dept of Physics, Catania, ITALY.
3:45 PM A2.6/B2.6
THE EFFECT OF IMPURITY CONTENT ON DEFECT DISTRIBUTION IN MeV ION IMPLANTED Si, Sebania Libertino, Univ di Catania, Dept of Physics, Catania, ITALY; V. Privitera, Salvatore Coffa, CNR, IMETEM, Catania, ITALY; F. Priolo, Univ di Catania, INFM, Catania, ITALY.
4:00 PM A2.7/B2.7
COMPETITION BETWEEN GETTERING BY IMPLANTATION-INDUCED CAVITIES IN SILICON AND INTERNAL GETTERING ASSOCIATED WITH SiO
PRECIPITATION, Scott A. McHugo, Univ of California-Berkeley, Dept of MS&ME, Berkeley, CA; Eicke R. Weber, Univ of California-Berkeley, Dept of Matls Science & Mineral Engr , Berkeley, CA; Samuel M. Myers, Gary A. Petersen, Sandia National Laboratories, Albuquerque, NM.
4:15 PM A2.8/B2.8
GLANCING INCIDENCE X-RAY DIFFRACTION STUDIES OF IMPLANTATION DAMAGE IN SILICON, Paul J. Partyka, Univ of Illinois-Urbana, Dept of MS&E, Urbana, IL; M. Ghaly, Univ of Illinois-Urbana, Materials Research Lab, Urbana, IL; R. S. Averback, I. K. Robinson, Univ of Illinois-Urbana, Dept of MS&E, Urbana, IL; M. Wang, Lawrence Livermore National Laboratory, Livermore, CA; Tomas Diaz de la Rubia, Lawrence Livermore National Laboratory, Dept of Chem & Matls Science, Livermore, CA; P. Ehrhart, Forschungszentrum Julich, Juelich, GERMANY.
4:30 PM A2.9/B2.9
MONTE CARLO SIMULATION OF THE ION IMPLANT DAMAGE PROCESS IN SILICON, Shiyang Tian, M. Morris, Steven J. Morris, Borna J. Obradovic, Al F. Tasch, Univ of Texas-Austin, Microelectronics Research Center, Austin, TX.
4:45 PM A2.10/B2.10
ION BEAM INDUCED AMORPHIZATION IN SILICON AT KEV ENERGIES, Maria Jose Caturla, Tomas Diaz de la Rubia, Lawrence Livermore National Laboratory, Dept of Chem & Matls Science, Livermore, CA.
SESSION A3/B3: POSTER SESSION:
SEMICONDUCTORS
Chairs: Nathan W. Cheung Tomas Diaz de la Rubia and Wolfgang Skorupa
Monday Evening, December 2, 1996
8:00 P.M.
America Ballroom (W)
A3.1/B3.1
EFFECTS OF SELF-INTERSTITIAL CLUSTERING ON THE TRANSIENT ENHANCED DIFFUSION OF BORON IN SILICON, Sandro Solmi, S. Valmorri, CNR-Lamel, Bologna, ITALY.
A3.2/B3.2
BORON TRANSIENT ENHANCED DIFFUSION IN HEAVILY PHOSPHORUS DOPED SI, Menbing Huang, Univ of Western Ontario, Dept of Physics, London, CANADA; Ian V. Mitchell, Univ of Western Ontario, Interface Science Western, London, ON.
A3.3/B3.3
EPR STUDY OF DEFECT FORMATION IN H IMPLANTED AND ANNEALED CZ Si, Branko Pivac, B. Rakvin, Rudjer Boskovic Inst, Dept of Physics, Zagreb, CROATIA; F. Corni, Univ di Modena, Dipartimento di Fisica, Modena, ITALY; R. Tonini, G. Ottaviani, Univ di Modena, Dept di Fisica, Modena, ITALY.
A3.4/B3.4
ELECTRONIC STRUCTURE AND GATE CAPACITANCE-VOLTAGE CHARACTERISTICS OF MBE SILICON
-FETS, Oscar Hipolito, Univ de Mogi das Cruzes, Dept of Nucleo de Pesquisa Tech, Mogi das Cruzes, BRAZIL; Jose Eduardo Manzoli, Univ of Sao Paulo, San Paulo, BRAZIL.
A3.5/B3.5
AN ELECTRONIC STOPPING POWER MODEL IN SINGLE-CRYSTAL SILICON FROM A FEW KeV TO SEVERAL MeV, Steven J. Morris, Borna J. Obradovic, Univ of Texas-Austin, Microelectronics Research Center, Austin, TX; Shyh-Horng Yang, TI Inc, Dallas, TX; Al F. Tasch, Univ of Texas-Austin, Microelectronics Research Center, Austin, TX; Leonard M. Rubin, Eaton Corporation, Semiconductor Equipment Division, SEO, Beverly, MA.
A3.6/B3.6
MODELING OF THE VACANCY-MEDIATED DIFFUSION OF As IN Si
, Oleg Pankratov, Lawrence Livermore National Laboratory, Dept of Physics & Space Technology, Livermore, CA; Hanchen Huang, Lawrence Livermore National Laboratory, Dept of Chemistry, Livermore, CA; Tomas Diaz de la Rubia, Lawrence Livermore National Laboratory, Dept of Chem & Matls Science, Livermore, CA.
A3.7/B3.7
INVESTIGATION OF ABNORMAL ANNEALING BEHAVIOR [N FAST
NEUTRON IRRADIATED HIGH RESISTIVITY SILICON
DEVICES
, Cheng-Ji Li, Inst of Semiconductors, Beijing, CHINA; Zheng Li, Brookhaven National Laboratory, Upton, NY.
A3.8/B3.8
KINETICS OF INTRINSIC AND DOPANT-ENHANCED SOLID PHASE EPITAXY IN BURIED AMORPHOUS Si LAYERS, Jeffrey C. McCallum, Univ of Melbourne, School of Physics, Parkville, AUSTRALIA.
A3.9/B3.9
THERMAL ASSISTED DIFFUSION IN THE QUENCHING PHASE OF COLLISION CASCADES, Alfredo Caro, Roberto Saliba, Caro Magdalena, Centro Atomico Bariloche, Bariloche, ARGENTINA.
A3.10/B3.10
EFFECT OF VACANCY-TYPE DEFECTS ON ELECTRICAL-ACTIVATION OF
IMPLANTED INTO SILICON, Masahito Watanabe, NEC Corporation, ULSI Device Dev Lab, Kanagawa, JAPAN; Tomohisa Kitano, Susumu Asada, NEC Corporation, ULSI Device Development Lab, Kanagawa, JAPAN; Akira Uedono, Univ of Tsukuba, Inst of Matls Sci,; Tsuyoshi Moriya, Univ of Tsukuba, Dept of Matls Science, Ibaraki, JAPAN; Takao Kawano, Univ of Tsukuba, Radioisotope Center, Ibaraki, JAPAN; Shoichiro Tanigawa, Univ of Tsukuba, Dept of Matls Science, Ibaraki, JAPAN; Ryoichi Suzuki, Toshiyuki Ohdaira, Tomohisa Mikado, Electrotechnical Laboratory, Ibaraki, JAPAN.
A3.11/B3.11
ANNEALING PROPERTIES OF DEFECTS IN
IMPLANTED Si, Tomohisa Kitano, Masahito Watanabe, NEC Corporation, ULSI Device Dev Lab, Kanagawa, JAPAN; Akihiro Yaoita, Shizuo Oguro, NEC Corporation, ULSI Device Development Lab, Kanagawa, JAPAN; Akira Uedono, Univ of Tsukuba, Inst of Matls Sci,; Tsuyoshi Moriya, Shoichiro Tanigawa, Univ of Tsukuba, Dept of Matls Science, Ibaraki, JAPAN; Takao Kawano, Univ of Tsukuba, Radioisotope Center, Ibaraki, JAPAN; Ryoichi Suzuki, Toshiyuki Ohdaira, Tomohisa Mikado, Electrotechnical Laboratory, Ibaraki, JAPAN.
A3.12/B3.12
RAMAN SPECTROSCOPY OF ION-IMPLANTED SILICON, James P. Lavine, Eastman Kodak Co, Rochester, NY; David D. Tuschel, Eastman Kodak Co, ATD, Rochester, NY.
A3.13/B3.13
MASK-EDGE DISTRIBUTIONS DURING ION IMPLANTATION OF 80 keV
INTO Si, Daniel Danailov, Bulgaria Academy of Sciences, Inst of Electronics, Sofia, Bulgaria.
A3.14/B3.14
VACANCY-TYPE DEFECTS IN ELECTRON AND PROTON IRRADIATED II-VI COMPOUNDS, Sebastian Brunner, Werner Puff, Technische Univ Graz, Inst fur Kernphysik, Graz, AUSTRIA; Adam G. Balogh, Technische Hochschule Darmstadt, Dept of Matls Science, Darmstadt, GERMANY; Horst Baumann, J.W. Goethe Univ Frankfurt, Inst fur Kernphysik, Frankfurt am Main, GERMANY; Peter Mascher, McMaster Univ, Dept of Engineering Physics, Hamilton, CANADA.
A3.15/B3.15
SECONDARY DEFECT FORMATION AND GETTERING IN MeV SELF-IMPLANTED SILICON, Richard A. Brown, Oleg Kononchuk, Andrjez Romanowksi, Zbigniew Radzimski, George Rozgonyi, North Carolina State Univ, Dept of MS&E, Raleigh, NC; Fernando Gonzalez, Micron Technology Inc, Boise, ID.
A3.16/B3.16
INVESTIGATIONS OF PLASMA IMMERSION ION IMPLANTATION HYDROGENATION FOR POLY-Si TFTS USING AN ICP PLASMA SOURCE, Yuanzhong Zhou, Shu Qin, Chung Chan, Northeastern Univ, Dept of Electrical & Computer Engr, Boston, MA; Tsu-Jae King, Xerox Palo Alto Research Center, Palo Alto, CA.
A3.17/B3.17
STUDY OF HYDROGEN GETTERING EFFECTS IN PLASMA IMMERSION ION IMPLANTATION DOPING EXPERIMENTS, Shu Qin, Chung Chan, Northeastern Univ, Dept of Electrical & Computer Engr, Boston, MA; Linggen Song, Fudan Univ, Dept of Matls Science, Shanghai, CHINA; Xiangfu Zong, Fudan Univ, Dept of Materials Science, Shanghai, CHINA.
A3.18/B3.18
GROWTH MECHANISM OF CARBON IN SILICON(100) USING NEGATIVE CARBON ION BEAM SOURCE, Y. W. Ko, S. I. Kim, Stevens Inst of Technology, Dept of Physics & Engr Physics, Hoboken, NJ.
A3.19/B3.19
FABRICATION OF INVERSION
P-N JUNCTIONS IN SILICON, Alexander N. Buzynin, General Physics Inst, Phys Stat Sol, Moscow, RUSSIA; Albert E. Luk'yanov, Moscow State Univ, Dept of Physics, Moscow, Russia; Vyacheslav V. Osiko, General Physics Inst, Phys Stat Sol , Moscow, RUSSIA; Vladimir V. Voronkov, Inst of Rare Metals, Semiconductors, Moscow, RUSSIA.
A3.20/B3.20
ELECTRICAL PROPERTY OF COPPER FILMS BY PARTIALLY IONIZED BEAM DEPOSITION WITH THICKNESS, Sung Han, KIST, Ceramics Div, Seoul, SOUTH KOREA; Ki-Hyun Yoon, Yonsei Univ, Dept of Ceramic Engr, Seoul, SOUTH KOREA; K. H. Kim, Hong-Gui Jang, Hyung-Jin Jung, Seok-Keun Koh, KIST, Ceramics Div, Seoul, SOUTH KOREA.
A3.21/B3.21
Cu FILMS ON TiN/Ti/Si(100) BY PARTIALLY IONIZED BEAM DEPOSITION, Hong-Gui Jang, K. H. Kim, Sung Han, Won-Kook Choi, Hyung-Jin Jung, Seok-Keun Koh, KIST, Ceramics Div, Seoul, SOUTH KOREA.
A3.22/B3.22
EFFECT OFAr ION BOMBARDMENT ON THE STABILITY OF NARROW COBALT SILCIDE LINE, Jer-shen Maa, Chien-Hsiung Peng, Sharp Microelectronics Tech, Process Technology, Camas, WA.
A3.23/B3.23
GROWTH OF
ALLOYS ON Si BY COMBINED LOW-ENERGY ION BEAM AND MOLECULAR BEAM EPITAXY METHOD, Hajime Shibata, Electrotechnical Laboratory, Photonprocess Section, Ibaraki, JAPAN; S. Kimura, Y. Makita, A. Obara, N. Kobayashi, H. Takahashi, H. Katsumata, J. Tanabe, Electrotechnical Laboratory, Tsukuba, JAPAN; S. Uekusa, Electrotechnical Laboratory, Photonprocess Section, Tsukuba, JAPAN.
A3.24/B3.24
FORMATION AND CHARACTERISTICS OF CoSi
LAYERS SYNTHESIZED BY MEVVA IMPLANTATION, S. P. Wong, Chinese Univ of Hong Kong, Dept of Electronic Engr, Shantin NT, HONG KONG; Qicai Peng, W. Y. Cheung, Chinese Univ of Hong Kong, Dept of Electical Engr & Matls Tech, Shatin NT, HONG KONG; W. S. Guo, Chinese Univ of Hong Kong, Dept of EE&Matls Tech, Shatin NT, HONG KONG; J. B. Xu, I. H. Wilson, Chinese Univ of Hong Kong, Dept of Electrical Engr, Shatin NT, HONG KONG; Sui-Kong Hark, Chinese Univ of Hong Kong, Dept of Physics, Shatin NT, HONG KONG; R. Morton, S. S. Lau, Univ of California-San Diego, Dept of Electrical & Computer Engr, La Jolla, CA.
A3.25/B3.25
ION BEAM SYNTHESIS OF SiC/Si HETEROSTRUCTURES BY MEVVA IMPLANTATION, S. P. Wong, Chinese Univ of Hong Kong, Dept of Electronic Engr, Shantin NT, HONG KONG; L. C. Ho, Chinese Univ of Hong Kong, Dept of EE& Matls Tech, Shatin NT, HONG KONG; W. S. Guo, Chinese Univ of Hong Kong, Dept of EE&Matls Tech, Shatin NT, HONG KONG; H. Yan, Chinese Univ of Hong Kong, Dept of EE & Matls Tech , Shantin NT, HONG KONG; W. M. Kwok, Chinese Univ of Hong Kong, Dept of Chem & Matls Tech, Shatin, HONG KONG.
A3.26/B3.26
DEFECT ANNEALING IN GERMANIUM-IMPLANTED 6H-SiC WAFERS, Y. Pacaud, Research Center Rossendorf Inc, Inst Ionenstrahlphysik und Materialforschung, Dresden, GERMANY; Viton Heera, Research Center Rossendorf Inc, Inst Ion Beam Physics & Materials Res, Dresden, GERMANY; Rossen Yankov, Research Center Rossendorf Inc, Inst of Ion Beam Physics, Dresden, GERMANY; R. Kogler, Research Center Rossendorf Inc, Inst Ionenstrahlphysik Materiakforschung, Dresden, GERMANY; Gerhard Brauer, Technische Univ Dresden, Research Center Rossendorf, Dresden, GERMANY; Wolfgang Skorupa, Research Center Rossendorf Inc, Inst Ion Beam Phys & Matls Research, Dresden, GERMANY; J. Stoemenos, Univ of Thessaloniki, Dept of Physics, Thessaloniki, GREECE; R. Barklie, Trinity College, Dept of Physics, Dublin, IRELAND; A. Perez-Rodriguez, Univ de Barcelona, Dept de Fisica Aplicada i Electronica, Barcelona, SPAIN.
A3.27/B3.27
CONDUCTIVE TUNGSTEN-BASED LAYERS SYNTHESIZED BY ION IMPLANTATION INTO 6H-SILICON CARBIDE, Wolfgang Skorupa, Research Center Rossendorf Inc, Inst Ion Beam Phys & Matls Research, Dresden, GERMANY; Hannes Weishart, Research Center Rossendorf Inc, Inst Ionenstrahlphsik & Materialforschung, Dresden, GERMANY.
A3.28/B3.28
GERMANIUM REDISTRIBUTION PHENOMENA IN THE SYNTHESIS OF SiGe LAYERS, Chitranjan J. Patel, John B. Butcher, Middlesex Univ, Microelectronics Research Centre, London, UNITED KINGDOM.
A3.29/B3.29
INTERACTION OF CAVITIES AND DISLOCATIONS IN Si-Ge, David M. Follstaedt, Samuel M. Myers, Stephen R. Lee, Sandia National Laboratories, Albuquerque, NM.
A3.30/B3.30
PROTON RADIATION EFFECTS ON Pd/n-GaAs SCHOTTKY BARRIER DIODES, Subramanian Arulkumaran, N. Dharmarsu, Anna Univ, Crystal Growth Ctr, Berlin, GERMANY; Jesudoss Arokiaraj, R. R. Sumathi, Anna Univ, Crystal Growth Centre, ------, -------; Janagiraman Kumar, Anna Univ, Crystal Growth Ctr.
A3.31/B3.31
INVESTIGATION OF SILICON NITRIDE FORMATION USING NF
ION IMPLANTATION, T. W. Little, F. S. Ohuchi, Univ of Washington, Dept of MS&E, Seattle, WA.
A3.32/B3.32
SiC PRECIPITATE FORMATION DURING HIGH DOSE CARBON IMPLANTATION INTO SILICON, Jorg K.N. Lindner, Kerstin Volz, Bernd Stritzker, Univ Augsburg, Inst of Physics, Augsburg, GERMANY.
A3.33/B3.33
DEFECT ENGINEERING IN IRRADIATED GaAs, Richard A. Brown, North Carolina State Univ, Dept of MS&E, Raleigh, NC; J. S. Williams, Australian National Univ, Dept of Electronic Matls Engr, Canberra, AUSTRALIA.
A3.34/B3.34
DEFECTS PRODUCED BY PROTON IRRADIATION IN SEMI-INSULATING GaAs, Anna Cavallini, A. Castaldini, L. Polenta, Univ di Bologna, Dept of Physics, Bologna, ITALY; C. Canali, Univ di Modena, Dept of Physics, Modena, ITALY; F. Nava, Univ di Modena, INFN, Modena, ITALY; C. del Papa, Univ di Udine, Dept of Physics, Udine, ITALY.
A3.35/B3.35
AMORPHIZATION MECHANISMS IN AlGaAs, Benjamin Wilson Lagow, Ian McLean Robertson, Univ of Illinois-Urbana, Dept of MS&E, Urbana, IL; Britt Anne Turkot, Dept of MS&E, Urbana, IL.
A3.36/B3.36
ELECTRON BEAM ENHANCED PRECIPITATION IN HIGHLY CARBON DOPED GaAs LAYERS, Peter Werner, U. Goesele, Max-Planck-Inst, Microstructure Physics, Halle/Saale, GERMANY; H. Kohda, NTT LSI Laboratories, Atsugi-shi, JAPAN.
A3.37/B3.37
MODELING INTERSTITIAL INJECTION IN ION IMPLANTED SEMICONDUCTORS, Heyward G. Robinson, Stanford Univ, Dept of Electrical Engr, Stanford, CA; Stacy Holander-Gleixner, Stanford Univ, Dept of Materials Science, Stanford, CA; C. R. Helms, Stanford Univ, Dept of Electrical Engr, Stanford, CA.
A3.38/B3.38
ION BEAM MODIFICATION OF CLUSTER-COVERED SILICON SURFACES, Oleksiy Gulko, Martin Zinke-Allmang, Univ of Western Ontario, Dept of Physics, London, CANADA.
SESSION A4: PLASMA ION IMPLANTATION AND LOW ENERGY DEPOSITION TECHNIQUES IN ELECTRONIC MATERIALS
Chair: Nathan W. Cheung
Tuesday Morning, December 3, 1996
America Center (W)
9:00 AM *A4.1
PLASMA ION IMPLANTATION FOR FLAT PANEL DISPLAYS, Chung Chan, Shu Qin, Northeastern Univ, Dept of Electrical & Computer Engr, Boston, MA; Tsu-Jae King, Xerox Palo Alto Research Center, Palo Alto, CA.
9:30 AM *A4.2
SYNTHESIS OF SOI MATERIALS USING PLASMA IMMERSION ION IMPLANTATION, Paul K. Chu, City Univ of Hong Kong, Dept of Physical & Matls Science, Hong Kong, HONG KONG; Nathan W. Cheung, Univ of California-Berkeley, Dept of EE&CS, Berkeley, CA.
10:00 AM BREAK
10:30 AM *A4.3
PLASMA DOPING AND PLASMA-LESS DOPING OF SEMICONDUCTORS, Bunji Mizuno, Matsushita Electric Ind Co Ltd, Semiconductor Research Center, Osaka, JAPAN; Michihiko Takase, Ichiro Nakayama, Mototsugu Ogura, Matsushita Electric Ind Co Ltd, Semiconductor Research Ctr, Osaka, JAPAN.
11:00 AM A4.4
N-TYPE DOPING EXPERIMENTS BY PLASMA IMMERSION ION IMPLANTATION USING
SDS SYSTEM, Shu Qin, Yuanzhong Zhou, Northeastern Univ, Dept of Electrical & Computer Engr, Boston, MA; Keith Warner, Northeastern Univ, Plasma Science & Microelectronics Lab, Boston, MA; Chung Chan, Northeastern Univ, Dept of Electrical & Computer Engr, Boston, MA; Jiqun Shao, Stuart Denholm, Eaton Corporation, Semiconductor Equipment Division, Semiconductor Equipment Operation, Beverly, MA.
11:15 AM *A4.5
RANGE AND DAMAGE DISTRIBUTION IN CLUSTER ION IMPLANTATION, Isao Yamada, Jiro Matsuo, Kyoto University, Ion Beam Engr Exp Lab, Kyoto, JAPAN.
11:45 AM A4.6
GROWTH OF LOW-TEMPERATURE POLYCRYSTALLINE Si FILM BY DIRECT NEGATIVE Si ION BEAMS, M. H. Sohn, D. Kim, Stevens Inst of Technology, Dept of MS&E, Hoboken, NJ; Y. O. Ahn, Stevens Inst of Technology, Dept of Physics & Engr Physics, Hoboken, NJ; S. I. Kim, Skion Corp, Hoboken, NJ.
SESSION A5: WIDE BAND GAP MATERIALS, SILICIDES, COMPOUND SEMICONDUCTORS
Chairs: Robert G. Elliman and F. Priolo
Tuesday Afternoon, December 3, 1996
America Center (W)
1:30 PM *A5.1
ION IMPLANTATION EFFECTS IN SILICON CARBIDE, Viton Heera, Research Center Rossendorf Inc, Inst Ion Beam Physics & Materials Res, Dresden, GERMANY; Wolfgang Skorupa, Research Center Rossendorf Inc, Inst Ion Beam Phys & Matls Research, Dresden, GERMANY.
2:00 PM A5.2
ALUMINUM-SILICON CARBIDE INTERFACES: EFFECTS OF ION BOMBARDMENT ON CHEMICAL INTERACTIONS, Heather L. Beck, F. S. Ohuchi, Univ of Washington, Dept of MS&E, Seattle, WA.
2:15 PM A5.3
GROWTH OF PATTERNED SiC BY ION MODIFICATION AND ANNEALING OF
FILMS ON SILICON, Donald C. Lorents, SRI International, Molecular Physics Lab, Menlo Park, CA; Lorenza Moro, SRI International, Chemistry Lab, Menlo Park, CA; Anumita Paul, IIT Guwahati, Inst of Engineers Bldg, Guwahati Assam, INDIA; Ripudaman Malhotra, SRI International, Molecular Physics Lab, Menlo Park, CA; Rodney Ruoff, Washington Univ, Dept of Physics, St Louis, MO; Kuang J. Wu, Charles Evans & Associates, Redwood City, CA.
2:30 PM A5.4
TO CREATE BURIED SOFT LAYER IN SiC FOR 'COMPLIANT SUBSTRATE' BY ION IMPLANTATION, Mike Lioubtchenko, Nalin Parikh, Agajan Suvkhanov, Univ of North Carolina, Dept of Physics & Astronomy, Chapel Hill, NJ; Raj Singh, Univ of North Carolina, Dept of Computer Science, Chapel Hill, NC; John Hunn, Oak Ridge National Laboratory, Metals & Ceramic Div, Oak Ridge, TN.
2:45 PM A5.5
THE INFLUENCE OF SUBSTRATE TEMPERATURE ON THE FORMATION OF
LAYERS BY CO-IMPLANTATION OF
AND
IONS INTO 6H-SiC, J. Pezoldt, Technische Univ Ilmenau, Inst Festkorperelektronik, Ilmenau, GERMANY; Rossen Yankov, Research Center Rossendorf Inc, Inst of Ion Beam Physics, Dresden, GERMANY; Viton Heera, Research Center Rossendorf Inc, Inst Ion Beam Physics & Materials Res, Dresden, GERMANY.
3:00 PM BREAK
3:30 PM *A5.6
ION BEAM INDUCED EPITAXIAL REGROWTH AND INTERFACIAL AMORPHIZATION OF COMPOUND SEMICONDUCTORS, Ernst Glaser, Univ Jena, Inst Festkorperphysik, Jena, GERMANY; R. Schulz, T. Bachmann, U. Kaiser, Univ Jena, Inst fur Festkorperphysik, Jena, GERMANY.
4:00 PM A5.7
CHARACTERIZATION OF LATERALLY SELECTED Si DOPED LAYER
FORMED IN GaAs USING A LOW-ENERGY FIB-MBE COMBINED SYSTEM, Kenji Gamo, Junichi Yanagisawa, Yoshihiko Yuba, Fujio Wakaya, Hiromasa Nakayama, Osaka Univ, Fac of Engr Science, Osaka, JAPAN.
4:15 PM A5.8
QUANTUM TRANSPORT IN ION BEAM SYNTHESIZED BURIED COBALT SILICIDE WIRES, D. Lenssen, Th. Schapers, Siegfried Mantl, Forschungszentrum Julich, Julich, GERMANY.
4:30 PM A5.9
FABRICATION OF MULTI-LEVEL BURIED OXIDE LAYERS BY OXYGEN-ION-IMPLANTATION INTO Si/Ge MULTILAYERS
into Si/Ge multilayers, Toshio Ogino, Koji Sumitomo, Kuniyil Prabhakaran, Yoshihiro Kobayashi, NTT Basic Research Labs, Physical Science Research Lab, Kanagawa, JAPAN.
4:45 PM A5.10
THE FABRICATION OF HIGH-SPEED ELECTRONIC DEVICES BY ION-BEAM SYNTHESIS OF
STRAINED-LAYERS, Robert G. Elliman, Australian National Univ, Dept of Electronic Matls Engr, Canberra, AUSTRALIA; Hong Jiang, Texas Instruments, Inc, Dept of Mixed Signal Design, Dallas, TX; Wah-chung Wong, Pacific Solar Pty Ltd, New South Wales, AUSTRALIA; Per Kringhoj, Univ of Aarhus, Inst of Physics & Astronomy, Aarhus C, DENMARK.
SESSION A6: NANOCRYSTALLINE AND OTHER OPTICAL MATERIALS
Chairs: Dale E. Alexander and Wolfgang Skorupa
Wednesday Morning, December 4, 1996
America Center (W)
8:30 AM *A6.1
COMBINED ION-BEAM AND LASER-BEAM SYNTHESIS OF SILVER OXIDE NANOCLUSTERS IN SODA-LIME GLASS, Richard F. Haglund, Danny H. Osborne, Vanderbilt Univ, Dept of Physics & Astronomy, Nashville, TN; Francesco Gonella, Univ of Padova, Detp Fisica "Galileo Galilei", Padova, ITALY; Paolo Mazzoldi, Univ of Padova, Dept Fisica "Galileo Galilei", Padova, ITALY.
9:00 AM A6.2
GOLD IMPLANTED IN POROUS GLASS: SIZE AND SHAPE EFFECTS ON THE SURFACE PLASMON ABSORPTION OF GOLD NANOCRYSTALS, Don O. Henderson, Rixiang Mu, Akira Ueda, Fisk Univ, Dept of Physics, Nashville, TN; C. Woody White, John D. Budai, Jane G. Zhu, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN.
9:15 AM A6.3
FORMATION AND OPTICAL PROPERTIES OF METAL NANOCLUSTER-SILICA COMPOSITES FORMED BY SEQUENTIAL IMPLANTATION OF CD AND AG, R. A. Zuhr, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN; Robert H. Magruder, Toby S. Anderson, Vanderbilt Univ, Dept of Applied & Engr Sciences, Nashville, TN.
9:30 AM A6.4
FORMATION OF SILVER METAL NANOCLUSTERS IN MgO BY MeV Ag IMPLANTATION, Daryush Ila, Y. Qian, Z. Wu, Alabama A&M Univ, Ctr for Irradiation of Materials, Normal, AL; M. Curley, Alabama A&M Univ, Dept of Physics, Normal, AL; David B. Poker, Oak Ridge National Laboratory, Oak Ridge, TN; D. K. Hensley, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN.
9:45 AM BREAK
10:15 AM A6.5
NON-LINEAR OPTICAL RESPONSE OF METALLIC AND SEMICONDUCTING NANOCRYSTALS IN FUSED SILICA, Robert G. Elliman, Australian National Univ, Dept of Electronic Matls Engr, Canberra, AUSTRALIA; Barry Luther-Davies, Marek Samoc, Australian National Univ, Laser Physics Centre, Canberra, AUSTRALIA; Annette Dowd, Australian National Univ, Dept of Electronic Matls Engr, Canberra, AUSTRALIA.
10:30 AM A6.6
LINEAR AND NONLINEAR OPTICAL PROPERTIES OF METAL NANOCLUSTER-SILICA COMPOSITES FORMED BY IMPLANTATION OF SB IN HIGH-PURITY SILICA, Toby S. Anderson, Vanderbilt Univ, Dept of Applied & Engr Sciences, Nashville, TN ; R. A. Weeks, Vanderbilt Univ, Dept of Applied & Engr Science, Nashville, TN; Robert H. Magruder, Vanderbilt Univ, Dept of Applied & Engr Sciences, Nashville, TN; R. A. Zuhr, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN.
10:45 AM A6.7
ION-BEAM MODIFICATION OF OPTICAL MATERIALS AND SYNTHESIS OF SEMICONDUCTOR NANOCRYSTALS, Jane G. Zhu, C. Woody White, John D. Budai, Stephen P. Withrow, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN; Rixiang Mu, Don O. Henderson, Fisk Univ, Dept of Physics, Nashville, TN.
11:00 AM A6.8
EXCITATION AND DE-EXCITATION PROCESSES IN ERBIUM IMPLANTED LIGHT-EMITTING SILICON DEVICES, Giorgia Franzo, Salvatore Coffa, CNR, IMETEM, Catania, ITALY; Francesco Priolo, Univ di Catania, Dept of Physics, Catania, ITALY.
11:15 AM A6.9
Er-DOPED AMORPHOUS AND CRYSTALLINE Al
O
FILMS GROWN WITH LOW-ENERGY IONS FROM AN ECR PLASMA, J. C. Barbour, Barret G. Potter, David M. Follstaedt, J. A. Knapp, Sandia National Laboratories, Albuquerque, NM.
11:30 AM A6.10
MODIFICATION OF SINGLE CRYSTAL SAPPHIRE BY
ION IMPLANTATION, John D. Demaree, James K. Hirvonen, U.S. Army Research Laboratory, Materials Directorate, Aberdeen Proving Grd, MD; Alan Kirkpatrick, Bedford, MA.
SESSION A7: POLYMERS/UNIQUE AND NOVEL APPLICATIONS AND TECHNIQUES
Chairs: Dale E. Alexander and Daryush Ila
Wednesday Afternoon, December 4, 1996
America Center (W)
1:30 PM *A7.1
ION BEAM DAMAGE OF POLYMER SURFACES: INSIGHTS FROM
MOLECULAR-DYNAMICS SIMULATION, Donald W. Brenner, Olga A. Shenderova, Charles B. Parker, North Carolina State Univ, Dept of MS&E, Raleigh, NC.
2:00 PM A7.2
EFFECTS OF MeV ION BEAM ON POLYMERS, A. L. Evelyn, Daryush Ila, Alabama A&M Univ, Ctr for Irradiation of Materials, Normal, AL; R. L. Zimmerman, K. Bhat, Alabama A&M Univ, Dept of Physics & Chemistry, Normal, AL; David B. Poker, Oak Ridge National Laboratory, Oak Ridge, TN; D. K. Hensley, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN.
2:15 PM A7.3
ION IMPLANTED CONDUCTIVE POLYMER FILMS: APPLICATIONS IN MICROBOLOMETERS, James Kaufmann, Mary G. Moss, Brewer Science Inc, Rolla, MO; Yongqiang Wang, Univ of Southwest Louisiana, Dept of Physics, Lafayette, LA; Ryan E. Giedd, Southwest Missouri State Univ, Dept of Physics & Astronomy, Springfield, MO.
2:30 PM A7.4
PLASMA IMMERSION ION IMPLANTATION MODIFICATION OF CARBON THIN FILMS AND POLYMER MATERIALS, Imad F. Husein, Northeastern Univ, Dept of E&EC, Boston, MA; Yuanzhong Zhou, Shu Qin, Chung Chan, Northeastern Univ, Dept of Electrical & Computer Engr, Boston, MA.
2:45 PM BREAK
3:15 PM *A7.5
ION BEAM MODIFICATION OF FERROMAGNETIC THIN FILMS, J. E. E. Baglin, IBM Almaden Research Center, San Jose, CA; M. H. Tabacniks, Univ of Sao Paulo, Inst of Physics, Sao Paulo, BRAZIL; R. Fontana, A. J. Kellock, T. T. Bardin, IBM Almaden Research Center, San Jose, CA.
3:45 PM A7.6
MAGNETIC AND MAGNETO-RESISTIVE PROPERTIES OF ION BEAM AND ION- ASSISTED BEAM DEPOSITED GRANULAR
Co_(1-x)Al_xO_z (0.25
FILMS, H. R. Khan, FEM, Dept of Materials Physics, Schwaebisch Gmuend, GERMANY; F. Brouers, Univ de Liege, Dept of Materials Science, Liege, BELGIUM.
4:00 PM *A7.7
PLASMA IMMERSION ION IMPLANTATION FOR ENHANCED BATTERY
ELECTRODE PERFORMANCE, Andre Anders, Ian G. Brown, Othon R. Monteiro, Lawrence Berkeley National Laboratory, AFRD, Berkeley, CA; Frank R. McLarnon, Fanping Kong, Lawrence Berkeley National Laboratory, Dept of Electrical Engr, Berkeley, CA.
4:30 PM A7.8
METALLIC ALLOY MIXING BY HIGH POWER ION BEAMS TO IMPROVE SURFACE PROPERTIES IN Al-, Ti-, AND Fe- BASED MATERIALS, Timothy J. Renk, R. G. Buchheit, M. T. Crawford, D. J. Johnson, Sandia National Laboratories, Albuquerque, NM; Michael O. Thompson, Cornell Univ, Dept of MS&E, Ithaca, NY; Kenneth S. Grabowski, Naval Research Laboratory, Washington, DC.
4:45 PM A7.9
STUDY OF THE ION-ACOUSTIC EFFECT OF FOCUSED ION BEAMS, Jochen Teichert, Research Center Rossendorf Inc, Dept of FWI, Dresden, GERMANY; L. Bischoff, Research Center Rossendorf Inc, Dresden, GERMANY; B. Koehler, Fraunhofer-Inst, Dresden, GERMANY.
SESSION A8: NITRIDE FILMS AND COATINGS
Chair: Byungwoo Park
Thursday Morning, December 5, 1996
America Center (W)
8:30 AM *A8.1
SYNTHESIS OF NEW SUPERHARD COATINGS BASED ON BORON AND C-N PHASES BY MAGNETRON SPUTTERING, Yip-Wah Chung, Northwestern Univ, Dept of MS&E, Evanston, IL.
9:00 AM A8.2
CARBON NITRIDE FILMS FORMED USING SPUTTERING AND NEGATIVE CARBON ION SOURCES, Gary S. Tompa, Ivan H. Murzin, Structural Materials Industries Inc, Piscataway, NJ; J. Wei, Victor Muratov, Traugott E. Fischer, Stevens Inst of Technology, Dept of MS&E, Hoboken, NJ.
9:15 AM A8.3
THE MECHANISMS OF SURFACE HARDNESS ENHANCEMENT IN NITROGEN- AND CARBON-IMPLANTED AMORPHOUS CARBON, Deok H. Lee, Hyuk J. Lee, Georgia Inst of Technology, Dept of MS&E, Atlanta, GA; Byungwoo Park, Georgia Inst of Technology, School of MS&E, Atlanta, GA; David B. Poker, Oak Ridge National Laboratory, Oak Ridge, TN.
9:30 AM A8.4
CHEMICAL SPUTTERING EFFECTS DURING ION BEAM DEPOSITION OF CARBON NITRIDE THIN FILMS, Hans C. Hofsass, Carsten Ronning, Horst Feldermann, Michael Sebastian, Univ Konstanz, Fakultat fur Physik, Konstanz, GERMANY.
9:45 AM A8.5
LOW TEMPERATURE ION BEAM ASSISTED DEPOSITION OF NANOCRYSTALLINE TiN COATINGS, Hamid F. Karimy, Fereydoon Namavar, Eric J. Tobin, Raymond J. Bricault, Spire Corp, Bedford, MA; J. P. Hirvonen, Justus Haupt, Inst for Advanced Materials, Petten, NETHERLANDS; R. Ayer, STEM Inc, Woodbridge, CT; Claudia W. Colerico, Spire Corp, Bedford , MA.
10:00 AM BREAK
10:30 AM *A8.6
ENGINEERED NANOCRYSTALLITES FOR ENHANCED PERFORMANCE CERAMIC COATINGS BY ION BEAM DEPOSITION, Fereydoon Namavar, Spire Corp, Bedford, MA.
11:00 AM A8.7
MECHANICAL AND TRIBOLOGICAL PROPERTIES OF CHROMIUM NITRIDE FILMS DEPOSITED BY ION BEAM ASSISTED DEPOSITION, Eric J. Tobin, Fereydoon Namavar, Hamid F. Karimy, Claudia W. Colerico, Raymond J. Bricault, Spire Corp, Bedford, MA; J. P. Hirvonen, Justus Haupt, Inst for Advanced Materials, Petten, NETHERLANDS; R. Ayer, STEM Inc, Woodbridge, CT.
11:15 AM A8.8
GROWTH AND MECHANICAL AND TRIBOLOGICAL CHARACTERIZATION OF MULTI-LAYER HARD CARBON FILMS, Joel W. Ager, Lawrence Berkeley National Laboratory, Material Science Div, Berkeley, CA; Othon R. Monteiro, Ian G. Brown, Lawrence Berkeley National Laboratory, AFRD, Berkeley, CA; J. A. Knapp, David M. Follstaedt, Sandia National Laboratories, Albuquerque, NM; Kevin C. Walter, Los Alamos National Laboratory, MST4, Los Alamos, NM; Michael Nastasi, Los Alamos National Laboratory, MST4, Los Alamos, NM.
11:30 AM A8.9
A NOVEL METHOD FOR THE SYNTHESIS OF IRON NITRIDE COATINGS, Dirk O. Boerma, Univ of Groningen, NVSF / MSC, Groningen, NETHERLANDS; D. K. Inia, A. M. Vredenberg, W. M. Arnoldbik, Utrecht Univ, Ultrecht, NETHERLANDS.
11:45 AM A8.10
SYNTHESIS AND MECHANICAL CHARACTERIZATION OF VERY HARD CUBIC BN BASED FILMS DEPOSITED BY ION-ASSISTED SPUTTERING, Paul B Mirkarimi, Kevin F. McCarty, Douglas L. Medlin, N. R. Moody, Dean C. Dibble, Sandia National Laboratories, Livermore, CA.
SESSION A9: HARD COATINGS
Chair: Fereydoon Namavar
Thursday Afternoon, December 5, 1996
America Center (W)
1:30 PM *A9.1
EVALUATING MECHANICAL PROPERTIES OF THIN LAYERS USING NANOINDENTATION AND FINITE-ELEMENT MODELING: IMPLANTED METALS AND DEPOSITED LAYERS, J. A. Knapp, David M. Follstaedt, J. C. Barbour, Samuel M. Myers, Sandia National Laboratories, Albuquerque, NM; Joel W. Ager, Lawrence Berkeley National Laboratory, Material Science Div, Berkeley, CA; Ian G. Brown, O. R. Monteiro, Lawrence Berkeley National Laboratory, AFRD, Berkeley, CA.
2:00 PM A9.2
MECHANICAL PROPERTY EFFECT IN ION IMPLANTED BORON AND BORON SUBOXIDE FILMS, David B. Poker, Oak Ridge National Laboratory, Oak Ridge, TN; J. M. Williams, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN; Douglas L. Medlin, Sandia National Laboratories, Livermore, CA.
2:15 PM A9.3
PROPERTIES OF ION IMPLANTED Ti-6Al-4V PROCESSED USING
BEAMLINE AND PSII TECHNIQUES, Kevin C. Walter, Los Alamos National Laboratory, MST4, Los Alamos, NM; L. Riester, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN; Michael Nastasi, Los Alamos National Laboratory, MST4, Los Alamos, NM; J. M. Williams, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN.
2:30 PM A9.4
THERMOMECHANICALLY MODULATED NANOSCALE MULTILAYERED MATERIALS FOR APPLICATION IN ELECTROMAGNETIC RAILGUN SYSTEMS, Monde A. Otooni, U.S. Army Armanent Research, Development & Engineering Ctr, Picatinny Arsenal, NJ; Z. Wang, Lawrence Berkeley National Laboratory, Berkeley, CA; Ian G. Brown, Lawrence Berkeley National Laboratory, AFRD, Berkeley, CA.
2:45 PM A9.5
ALTERATION OF CORROSION BEHAVIOR OF HOT-PRESSED SILICON NITRIDE BY ALUMINUM IMPLANTATION IN THE PRESENCE OF SODIUM, Yong Suk Cheong, Honghua (Henry) Du, Stevens Inst of Technology, Dept of Materials Science, Hoboken, NJ; Stephen P. Withrow, Oak Ridge National Laboratory, Solid State Div, Oak Ridge , TN.
3:00 PM A9.6
PREPARATION OF TiC AND TiC/DLC MULTILAYERS BY METAL PLASMA IMMERSION AND IMPLANTATION: RELATIONWSHIP BETWEEN COMPOSITION, MICROSTRUCTURE AND WEAR PROPERTIES, Marie-Paule Delplancke-Ogletree, Univ Libre de Brussels, Metallurgie-Electrochimie CP 165, Brussels, BELGIUM; Othon R. Monteiro, Ian G. Brown, Lawrence Berkeley National Laboratory, AFRD, Berkeley, CA.
3:15 PM BREAK
3:45 PM A9.7
THERMAL ANNEALING BEHAVIOR OF Si-DLC IBAD COATINGS, Costas G. Fountzoulas, U.S. Army Research Laboratory, AMSRL-MA-CC Materials Directorate, Aberdeen Proving Grd, MD; John D. Demaree, L. C. Sengupta, James K. Hirvonen, U.S. Army Research Laboratory, Materials Directorate, Aberdeen Proving Grd, MD.
4:00 PM A9.8
LASER ABLATION OF HIGHLY ORIENTED PYROLYTIC GRAPHITE AT 532nm, Peidong Yang, Harvard Univ, Dept of Chemistry, Cambridge, MA; John Z. Zhang, Georgia Inst of Technology, School of Chemistry & Biochem, Atlanta, GA; Charles M. Lieber, Harvard Univ, Dept of Chemistry, Cambridge, MA.
4:15 PM A9.9
DEPOSITION AND PROPERTIES OF DOPED DIAMONDLIKE CARBON FILMS PRODUCED BY DUAL-SOURCE VACUUM ARC PLASMA IMMERSION, Othon R. Monteiro, Lawrence Berkeley National Laboratory, AFRD, Berkeley, CA; Marie-Paule Delplancke-Ogletree, Univ Libre de Brussels, Metallurgie-Electrochimie CP 165, Brussels, BELGIUM; Ian G. Brown, Lawrence Berkeley National Laboratory, AFRD, Berkeley, CA; Joel W. Ager, Lawrence Berkeley National Laboratory, Material Science Div, Berkeley, CA.
4:30 PM A9.10
QUASIAMORPHOUS GRAPHITE-DIAMOND CARBON, Benjamin F. Dorfman, Atomic-Scale Design Inc, Stony Brook, NY.
4:45 PM A9.11
TUNNELING CURRENT CHANGE OF GRAPHITE SURFACE BY SINGLE ION IRRADIATION, Hisato Ogiso, Joint Res Ctr for Atom Technology, Ibaraki, JAPAN; Kazushi Yamanaka, Mechanical Engineering Lab, Advanced Machinary, Ibaraki, Japan; Hiroshi Tokumoto, JRCAT-NAIR, Ibaraki, JAPAN; Shizuka Nakano, Mechanical Engineering Lab, Advanced Machinery, Ibaraki, Japan; Wataru Mizutani, Joint Res Ctr for Atom Technology, Ibaraki, JAPAN.
SESSION A10: POSTER SESSION:
HARD COATINGS, OPTICAL MATERIALS, POLYMERS, METALS AND INSULATORS
Chairs: Dale E. Alexander and Byungwoo Park
Thursday Evening, December 5, 1996
8:00 P.M.
America Ballroom (W)
A10.1
CARBON NITRIDE FILMS SYNTHESIZED BY NITROGEN ION BEAM BOMBARDING ON C60 FILMS, Zhi-Feng Ying, Zhong-Min Ren, Yuan-Cheng Du , Fu-Ming Li, Fudan Univ, Dept of Physics, Shanghai, CHINA; Jing Lin, Yun-Zhu Ren, Fudan Univ, Inst of Materials Science, Shanghai, CHINA; Xiangfu Zong, Fudan Univ, Dept of Materials Science, Shanghai, CHINA.
A10.2
CHARACTERIZATION OF CARBON NITRIDE FILMS MODIFIED BY LOW ENERGY ION-BEAM BOMBARDMENT, Zhi-Feng Ying, Zhong-Min Ren, Yuan-Cheng Du , Fu-Ming Li, T. D. Lee, Fudan Univ, Dept of Physics, Shanghai, CHINA.
A10.3
BORON-CARBON-NITROGEN FILMS SYNTHESIZED BY LASER ABLATION UNDER ION BEAM BOMBARDMENT, Zhong-Min Ren, Yuan-Cheng Du , Zhi-Feng Ying, Fu-Ming Li, T. D. Lee, Fudan Univ, Dept of Physics, Shanghai, CHINA; Jing Lin, Yun-Zhu Ren, Fudan Univ, Inst of Materials Science, Shanghai, CHINA; Xiangfu Zong, Fudan Univ, Dept of Materials Science, Shanghai, CHINA.
A10.4
SYNTHESIS OF AlN/Al COMPOSITIONAL GRADIENT FILMS BY ION-BEAM ASSISTED DEPOSITION METHOD, Yoshihisa Watanabe, Yoshikazu Nakamura, Shingo Uchiyama, Yoshiki Amamoto, National Defense Academy, Dept of MS&E, Kanagawa, JAPAN.
A10.5
CARBON NITRIDE FILM FORMATION BY LOW ENERGY POSITIVE AND
NEGATIVE ION BEAM DEPOSITION, Nobuteru Tsubouchi, Kanenaga Fujii, Atsushi Kinomura, Akiyoshi Chayahara, Yuji Horino, Burkhard Enders, Osaka National Research Inst, Dept of Material Physics, Osaka, JAPAN.
A10.6
DETERMINATION OF DEFECTS IN HIGH ENRGY ION IRRADIATED CARBON FILM, Somnath Bhattacharyya, Amit Rastogi, K. S.R.K. Rao, Indian Inst of Science, Dept of Physics, Karnataka, INDIA; D. Kanjilal, Nuclear Science Centre, New Delhi, INDIA; S. V. Bhat, S. V. Subramanyam, Indian Inst of Science, Dept of Physics, Bangalore, INDIA.
A10.7
DAMAGE AND COMPACTATION OF ION IRRADIATED FULLERENES, Fernando C. Zawislak, UFRGS, Dept of Physics, Porto Alegre, BRAZIL; Moni Behar, UFRGS, Inst de Fisica, Porto Alegre, BRAZIL; Pedro L. Grande, UFRGS, Inst de Fiscia, Porto Alegre, BRAZIL; D. Fink, UFRGS, Inst de Fisica, Porto Alegre, BRAZIL.
A10.8
ION-BEAM-ASSISTED DEPOSITION OF THIN BARRIER INTERLAYERS FOR HARD AND SUPERHARD COATINGS, Igor Konyashin, Max-Planck-Inst, Powder Metallurgy Lab, Stuttgart, GERMANY.
A10.9
LARGE AREA SURFACE TREATMENT BY ION BEAM TECHNOLOGY, Richard L. C. Wu, K Systems Corp, Dept of Materials Engr, Beavercreek, OH; W. Lanter, K Systems Corp, Beavercreek, OH; P. E. Emmert, Air Force Wright Laboratory, Wright Patterson AFB, OH.
A10.10
VIOLET LUMINESCENCE FROM Ge
-IMPLANTED
FILM ON Si SUBSTRATE, Xi-Mao Bao, Ting Gao, Feng Yan, Song Tong, Nanjing Univ, Dept of Physics, Nanjing, CHINA.
A10.11
He IMPLANTED CHANNEL WAVEGUIDES OF NEW DESIGN FOR EFFICIENT BLUE LASER LIGHT GENERATION, Lutz Beckers, St. Bauer, Christoph Buchal, Forschungszentrum Julich, ISI, Julich, GERMANY; D. Fluck, T. Pliska, P. Gunter, ETH-Honggerberg, Inst of Quantum Electronics, Zurich, SWITZERLAND.
A10.12
HIGH CURRENT IMPLANTATION OF NEGATIVE COPPER IONS INTO SILICA GLASSES, Naoki Kishimoto, Nat Research Inst for Metals, High Resolution Beam Research Station, Ibaraki, JAPAN; Vasily T. Gritsyna, Kharkov State Univ, Dept of Physics & Technology, Kharkov, UKRAINE; Hiroshi Amekura, Kenichiro Kono, Nat Research Inst for Metals, High Resolution Beam Research Station, Ibaraki, JAPAN.
A10.13
FORMATION OF OPTICAL SILVER/POLYMER MATERIALS BY ION IMPLANTATION, A. L. Stepanov, S. N. Abdullin, I. B. Khaibullin, Yu N. Osin, Kazan Physical-Technical Inst, Dept of Radiation Physics, Kazan, RUSSIA; R. I. Khaibullin, Kazan Physical-Technical Inst, Radiation Physics, Kazan, RUSSIA.
A10.14
SIZE CONTROL OF INDIUM PHOSPHIDE QUANTUM DOTS FORMED BY SEQUENTIAL ION IMPLANTATION OF PHOSPHOROUS AND INDIUM INTO POROUS VYCOR GLASS, Don O. Henderson, Akira Ueda, Rixiang Mu, Yei-Shin Tung, Fisk Univ, Dept of Physics, Nashville, TN; C. Woody White, Jane G. Zhu, John D. Budai, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN.
A10.15
OPTICAL AND STRUCTURAL CHARACTERIZATION OF ZINC IMPLANTED SILICA UNDER VARIOUS THERMAL TREATMENTS, Don O. Henderson, Rixiang Mu, Akira Ueda, Yei-Shin Tung, Fisk Univ, Dept of Physics, Nashville, TN; C. Woody White, Jane G. Zhu, John D. Budai, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN.
A10.16
CARBON IMPLANTED IN OPTICAL GRADE FUSED SILICA: ANNEALING EFFECTS IN REDUCING AND OXIDIZING ATMOSPHERES, Don O. Henderson, Yei-Shin Tung, Rixiang Mu, Akira Ueda, Fisk Univ, Dept of Physics, Nashville, TN; C. Woody White, Jane G. Zhu, John D. Budai, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN.
A10.17
QUANTUM-SIZED SILICON PRECIPITATES IN SILICON-IMPLANTED AND PULSE-ANNEALED SILICON DIOXIDE FILMS: PHOTOLUMINESCENCE AND STRUCTURAL TRANSFORMATIONS, G. A. Kachurin, I. E. Tyschenko, K. S. Zhuravliov, V. A. Volodin, A. K. Gutakovsky, A. F. Leier, Inst of Semiconductor Physics, Novosibirsk, RUSSIA; Wolfgang Skorupa, Research Center Rossendorf Inc, Inst Ion Beam Phys & Matls Research, Dresden, GERMANY; Rossen Yankov, Research Center Rossendorf Inc, Inst of Ion Beam Physics, Dresden, GERMANY; L. Rebohle, Forschungszentrum Rossendorf e.V., Dresden, GERMANY.
A10.18
IDENTIFICATION OF HYDROPHILIC GROUP FORMATION ON POLYMER SURFACE DURING
ION IRRADIATION IN
ENVIRONMENT, Won-Kook Choi, Hyung-Jin Jung, Jun-Sik Cho, KIST, Ceramics Div, Seoul, SOUTH KOREA; Sung-Ryong Kim, Sam Yang R&D Center, Taejon, SOUTH KOREA; Seok-Keun Koh, KIST, Ceramics Div, Seoul, SOUTH KOREA.
A10.19
SURFACE MODIFICATION OF POLYTETRAFLUORETHYLENE BY IRRADIATION FOR IMPROVED ADHESION TO OTHER MATERIALS, Seok-Keun Koh, Hong-Gui Jang, Won-Kook Choi, KIST, Ceramics Div, Seoul, SOUTH KOREA; Sung-Chul Park, Sung-Ryong Kim, Sam Yang R&D Center, Taejon, SOUTH KOREA; K. D. Pae, KIST, Seoula, SOUTH KOREA.
A10.20
SURFACE MODIFICATION OF POLYMER BY ION ASSISTED REACTION IN REACTIVE GASES ENVIRONMENT, Seok-Keun Koh, Won-Kook Choi, Hyung-Jin Jung, KIST, Ceramics Div, Seoul, SOUTH KOREA.
A10.21
STRUCTURE-PROPERTY CHARACTERISTICS OF ION IMPLANTED SYNDIOTACTIC POLYSTYRENE (sPS), Caiping Han, Univ of Southwest Louisiana, Dept of Chemical Engr, Lafayette, LA; Yongqiang Wang, Univ of Southwest Louisiana, Dept of Physics, Lafayette, LA; L. C. Carlson, M. R. Madani, T. C. Pesacreta, W. J. Sheu, Univ of Southwest Louisiana, Acadiana Research Lab, Lafayette, LA; Gary A. Glass, Univ of Southwest Louisiana, Dept of Physics, Lafayette, LA; C. M. Hsiung, K. R. Jinna, A. B. Ponter, Univ of Southwest Louisiana, Dept of Chemical Engr, Lafayette, LA.
A10.22
ION- AND ELECTRON-BEAM MODIFICATION OF SURFACE CHEMICAL REACTIONS, Chun-Chen Yang, Che-Chen Chang, National Taiwan Univ, Dept of Chemistry, Taipei, TAIWAN.
A10.23
RETURN TO PASSIVITY CHARACTERISTICS OF OXYGEN-IMPLANTED TITANIUM BY RECOIL COLLISIONS WITH HIGH-ENERGY GOLD IONS, Grant T. Gibson, Yongqiang Wang, Univ of Southwest Louisiana, Dept of Physics, Lafayette, LA; W. J. Sheu, J. D. Garber, M. R. Madini, T. C. Pesacreta, Univ of Southwest Louisiana, Acadiana Research Lab, Lafayette, LA; Gary A. Glass, Univ of Southwest Louisiana, Dept of Physics, Lafayette, LA.
A10.24
THE INFLUENCE OF CERIUM ION IMPLANTATION ON HIGH TEMPERATURE OXIDATION OF NICKEL, F. Czerwinski, Jerzy A. Szpunar, McGill Univ, Dept of Metallurgical Engr, Montreal, CANADA.
A10.25
PREPARATION AND CHARACTERIZATION OF TIN OXIDE FILMS BY ION-ASSISTED DEPOSITION, Jun-Sik Cho, Won-Kook Choi, KIST, Ceramics Div, Seoul, SOUTH KOREA; Ki-Hyun Yoon, Yonsei Univ, Dept of Ceramic Engr, Seoul, SOUTH KOREA; Seok-Kyun Song, Hyung-Jin Jung, Seok-Keun Koh, KIST, Ceramics Div, Seoul, SOUTH KOREA.
A10.26
STRESS INDUCED EXTENDED RANGES FOR HYDRATION AND OTHER PHENOMENA IN ION IMPLANTED SILICA GLASSES, George W. Arnold, Consultants International, Tijeras, NM; Giancarlo Battaglin, Univ di Venezia, Dept di Chimica Fisica, Venezia, ITALY.
A10.27
GROWTH AND STRUCTURE STUDY OF BI-AXIAL TEXTURED MgO THIN FILM ON NON-EPITAXIAL SUBSTRATES BY ION BEAM ASSISTED DEPOSITION, Connie Pin-Chin Wang, Khiem Do, Steve Arnason, Stanford Univ, Ginzton Lab, Stanford, CA; Malcolm R. Beasley, Theodore H. Geballe, Stanford Univ, Dept of Applied Physics, Stanford, CA; Paula T. Hammond, MIT, Dept of Chemical Engr, Cambridge, MA.
A10.28
SURFACE AND SUBSURFACE TRAPPING OF HYPERTHERMAL SODIUM ON Cu(100), David M. Goodstein, Utah State Univ, Dept of Physics, Logan, UT; Eric B. Dahl, Cornell Univ, Dept of Physics, Ithaca, NY; Barbara H. Cooper, Cornell Univ, Dept of Physics, Ithaca, NY.
A10.29
ALPHA PARTICLE BEAM INTERACTIONS WITH Fe-BASED AND FeCo-BASED AMORPHOUS MAGNETS, Monica Sorescu, Duquesne Univ, Dept of Physics, Pittsburgh, PA; Barb Danila, Inst of Atomic Physics, Dept of Materials Science, Bucharest-Magurele, ROMANIA.
A10.30
INFLUENCE OF THE PROTON IRRADIATION ON THE ADHESION OF Cu THIN FILMS, Yury P. Pokholkov, Polytechnic Univ, Dept of Electro-Mechanical, Tomsk, RUSSIA; Fedor E. Shakalov, Anatoly N. Sergeev, Oleg L. Khasanov, Polytechnic Univ, R&D Center "Spectr", Tomsk, RUSSIA.
A10.31
A STUDY ON TRIBOLOGICAL CHARACTERISTICS OF TITANIUM NITRIDE FILM PREPARED BY DYNAMIC ION BEAM MIXING METHOD FOR SLIDING BEARINGS APPLICATION, Hiroshi Nagasaka, Ebara Research Co Ltd, Dept of Materials Research, Fujisawa-shi, JAPAN; Tadashi Koizumi, Ebara Research Co Ltd, Fujisawa-shi, JAPAN.