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2010 MRS Fall Meeting & Exhibit

November 29-December 3, 2010 | Boston
Meeting Chairs
: Ana Claudia Arias, Robert F. Cook, Clemens Heske, Shu Yang

Symposium F : Low-Temperature-Processed Thin-Film Transistors

2010-11-29   Show All Abstracts

Symposium Organizers

Soeren Steudel IMEC
Shelby F. Nelson Eastman Kodak Company
Veit Wagner Jacobs University Bremen
Heiko Thiem Evonik Degussa GmbH
F1: Organic Semiconductor Material
Session Chairs
Heiko Thiem
Monday AM, November 29, 2010
Room 309 (Hynes)

10:00 AM - **F1.1
Designing Solution-processable Materials for Organic Thin-film Transistors.

John Anthony 1
1 , University of Kentucky, Lexington, Kentucky, United States

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10:30 AM - F1.2
High Mobility TIPS-Pentacene Field Effect Transistors (FETs) Fabricated Using Solution Shearing.

Gaurav Giri 1 , Eric Verploegen 1 2 , Hector Becerril 3 , Alberto Salleo 4 , Michael Toney 2 , John Anthony 5 , Zhenan Bao 1
1 Chemical Engineering, Stanford University, Stanford, California, United States, 2 Stanford Synchrotron Radiation Lightsource, Stanford University, Stanford, California, United States, 3 Chemistry, Brigham Young University, Rexburg, Idaho, United States, 4 Material Science and Engineering, Stanford University, Stanford, California, United States, 5 Chemistry, University of Kentucky, Lexington, Kentucky, United States

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10:45 AM - F1.3
Polymer and Nanoparticle Mediated TIPS-Pentacene Crystallization: Towards Enhanced Performance Consistency in Small-molecule-based Solution Processible Organic Thin-film Transistors.

Zhengran He 1 , William Durant 1 , Kai Xiao 2 , John Anthony 3 , Jihua Chen 2 , Michael Kilbey 2 , Dawen Li 1
1 Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, Alabama, United States, 2 Center for Nanophase Materials Sciences, Oak Ridge National Lab, Oak Ridge, Tennessee, United States, 3 Deparment of Chemistry, University of Kentucky, Lexington, Kentucky, United States

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11:00 AM -
BREAK

11:30 AM - **F1.4
High-mobility Organic Thin-film Transistors with Improved Shelf-life Stability.

Hagen Klauk 1
1 , Max Planck Institute for Solid State Research, Stuttgart Germany

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12:00 PM - F1.5
A New Solution-process for High Mobility and Small Variation in Organic TFT Performance via Liquid Crystal Film.

Hiroaki Iino 1 2 , Jun-ichi Hanna 1 2
1 Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama, Kanagawa, Japan, 2 , JST-CREST, Yokohama, Kanagawa, Japan

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12:15 PM - F1.6
Solution Processed n-Channel Organic Field-effect Transistors with High Uniformity and Electrical Stability.

Shree Tiwari 1 , Keith Knauer 1 , William Potscavage 1 , Bernard Kippelen 1
1 School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia, United States

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F2: Dielectrics for TFTs
Session Chairs
Shelby Nelson
Monday PM, November 29, 2010
Room 309 (Hynes)

2:30 PM - **F2.1
Fabrication and Stability of Low-temperature Solution-processed Organic Transistors.

Alberto Salleo 1 , Youngmin Park 1 , Leslie Jimison 1 , Jonathan Rivnay 1 , Tobin Marks 2 , Antonio Facchetti 3 2
1 , Stanford University, Stanford, California, United States, 2 Chemistry , Northwestern University, Evanston, Illinois, United States, 3 , Polyera Corp., Skokie, Illinois, United States

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3:00 PM - F2.2
Low Cost Solution-processed High-k Gate Dielectric Materials for Large Area Circuit Applications.

Wan-Yu Lin 1 2 , Robert Mueller 1 , Kris Myny 1 , Soeren Steudel 1 , Jan Genoe 1 , Paul Heremans 1 3
1 , imec, Leuven Belgium, 2 Metallurgy and Materials Engineering(MTM), Katholieke Universiteit Leuven , Leuven Belgium, 3 Department of Electrical Engineering(ESAT), Katholieke Universiteit Leuven , Leuven Belgium

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3:15 PM - F2.3
High-k Gate Insulators for Thin Film Transistors Grown by Remote Plasma Atomic Layer Deposition.

Fu Tang 1 , Chiyu Zhu 1 , Robert Nemanich 1
1 Department of Physics, Arizona State University, Tempe, Arizona, United States

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3:30 PM - F2.4
UV Assisted Solution-based Zirconium Oxide Gate Dielectric for Low-voltage Operation of Organic Field Effect Transistors.

Young Min Park 1 , Alberto Salleo 1 , Juergen Daniel 2
1 Materials Science and Engineering, Stanford University, Stanford, California, United States, 2 , Palo Alto Research Center, Palo Alto, California, United States

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3:45 PM - F2.5
Pressure Dependence on the Physical Properties of SiO2 Gate Oxide Formed by Inductive Coupled Plasma Oxidation.

Beomjong Kim 1 , Dongchan Kim 1 , Yoonjae Kim 1 , Hanjin Lim 1 , Jueun Kim 1 , Wookyeol Yi 1 , Daehyun Kim 1 , Bonghyun Kim 1 , Youngwan Kim 1 , Sungho Kang 1 , Youngseok Kim 1 , Woojun Lee 1 , Seokwoo Nam 1
1 , Samsung Electronics Co. Ltd., Hwasung Korea (the Republic of)

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4:00 PM - *
Break

4:30 PM - F2.6
Precursor Design and Engineering for Low-temperature Deposition of Gate Dielectrics for Thin Film Transistors.

Anupama Mallikarjunan 1 , Laura Matz 1 , Andrew Johnson 1 , Raymond Vrtis 1 , Manchao Xiao 2 , Mark O'Neill 2 , Bing Han 1
1 , Air Products and Chemicals, Inc., Allentown, Pennsylvania, United States, 2 , Air Products and Chemicals, Inc., Carlsbad, California, United States

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4:45 PM - F2.7
Low-damage Preparation of SiO2 Dielectric Thin Film by the Photo-assisted Oxidation Processing.

Takehito Kodzasa 1 , Sei Uemura 1 , Kouji Suemori 1 , Manabu Yoshida 1 , Satoshi Hoshino 1 , Noriyuki Takada 1 , Toshihide Kamata 1
1 , National Institute of Advanced Industrial Science and Technology, Tsukuba Japan

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5:00 PM - F2.8
Effect of Hydrogen on Electrical Performance of Charge-trapping Device Structure of SiAlON/Si3N4/SiO2/ Stacks.

Nam Nguyen 1 , Ziyuan Lu 2 , Markus Wilde 3 , Toyohiro Chikyow 1
1 Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba Japan, 2 Test and Analysis Division, NEC Electronic Corporation, Kawasaki Japan, 3 Institute of Industrial Science, University of Tokyo, Tokyo Japan

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5:15 PM - F2.9
Small Molecule-polymer Blend Organic Field Effect Transistors with Long-term Environmental and Operational Stability Using Fluoropolymer/Oxide Bi-layer Top Gate Dielectric.

Do Kyung Hwang 1 , Canek Fuentes-Hernandez 1 , Jungbae Kim 1 , William Potscavage 1 , Sung-Jin Kim 1 , Bernard Kippelen 1
1 School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia, United States

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5:30 PM - F2.10
Biocompatible and Biodegradable Materials for Organic Field Effect Transistors.

Mihai Irimia-Vladu 1 4 , Pavel Troshin 2 , Melanie Reisinger 1 , Guenther Schwabegger 3 , Reinhard Schwoediauer 1 , Vladimir Razumov 2 , Helmut Sitter 3 , Siegfried Bauer 1 , Niyazi Sariciftci 4
1 Soft Matter Physics , Johannes Kepler University, Linz Austria, 4 Linz Institute for Organic Solar Cells (LIOS), Johannes Kepler University, Linz Austria, 2 Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka Russian Federation, 3 Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz Austria

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F3: Poster Session: Organic and CNT TFT
Session Chairs
Veit Wagner
Monday PM, November 29, 2010
Exhibition Hall D (Hynes)

9:00 PM - F3.2
Adjustable Memory Effect in Organic Thin Film Transistors via Embedded Nanoparticles in Pentacene Layer.

Sumei Wang 1 2 , Paddy, K. L. Chan 1 , Dennis,C. W. Leung 2
1 Department of Mechanical Engineering, the Hongkong Polytechnic University, Hongkong China, 2 Department of Applied Physics, the Hongkong Polytechnic University, Hongkong China

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9:00 PM - F3.3
A Detailed Experimental Study of the Short Channel Effect in PPV Based Organic Field Effect Transistors.

Ali Veysel Tunc 1 , Elizabeth von Hauff 1 , Juergen Parisi 1
1 Department of Physics, EHF Laboratory, University of Oldenburg, Oldenburg Germany

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9:00 PM - F3.5
High Mobility, Low Voltage Operating C60 Based N-type Organic Field Effect Transistors.

Mujeeb Ullah 1 , Mihai Irimia-Vladu 2 , Melanie Reisinger 2 , Yasin Kanbur 3 , Guenther Schwabegger 1 , Reinhard Schwoediauer 2 , Siegfried Bauer 2 , Niyazi Sariciftci 4 , Helmut Sitter 1
1 Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Linz Austria, 2 Institute of Soft Matter Physics (SOMAP), Johannes Kepler University Linz, Linz Austria, 3 Department of Polymer Science and Technology, Middle East Technical University, Balgat, Ankara Turkey, 4 Linz Institute of Organic Solar Cells (LIOS), Johannes Kepler University Linz, Linz Austria

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9:00 PM - F3.6
Capacitance-Voltage Measurement of an Ambipolar Pentacene Field Effect Transistor in Operation by Using Displacement Current Measurement.

Yuya Tanaka 1 , Yutaka Noguchi 1 2 , Hisao Ishii 1 2
1 Graduate School of Advanced Integration Science, Chiba University, Chiba Japan, 2 Center for Frontier Science, Chiba University, Chiba Japan

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9:00 PM - F3.7
Tetracene Thin Films on Organic Dielectrics: Growth, Structure, and Functional Properties.

Clara Santato 1 , Julia Wuensche 1 , Simone Bertolazzi 1
1 , École Polytechnique Montréal, Montréal, Quebec, Canada

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9:00 PM - F3.8
Polymer Source-Gated Transistors.

S. Georgakopoulos 1 , D. Sparrowe 2 , F. Meyer 2 , Maxim Shkunov 1
1 Advanced Technology Institute, University of Surrey, Surrey United Kingdom, 2 Chilworth Technical Centre, Merck Chemicals Ltd., Southampton United Kingdom

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2010-11-30   Show All Abstracts

Symposium Organizers

Soeren Steudel IMEC
Shelby F. Nelson Eastman Kodak Company
Veit Wagner Jacobs University Bremen
Heiko Thiem Evonik Degussa GmbH
F4/MM4: Joint Session: Vacuum Deposited Metaloxide TFT
Session Chairs
Shelby Nelson
Erin Ratcliff
Tuesday AM, November 30, 2010
Constitution B (Sheraton)

9:30 AM - **F4.1/MM4.1
Fully Transparent n and p-type Oxide TFTs.

Elvira Fortunato 1
1 Materials Science, FCT-UNL, Caparica Portugal

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10:00 AM - F4.2/MM4.2
P-Type Tin Monoxide Semiconductor Fabricated by Sputtering.

Po-Ching Hsu 1 , Wei-Chung Chen 1 , Tzu-Ming Wang 1 , Chung-Chih Wu 1 , Hsing-Hung Hsieh 2 , Ching-Sang Chuang 2 , Yusin Lin 2
1 Graduate Institute of Electronics Engineering, National Taiwan University, Taipei Taiwan, 2 , AU Optronics Corporation, Hsinchu Taiwan

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10:15 AM - **F4.3/MM4.3
The Improvement of Photo-induced Bias Stability of the Oxide TFT.

Chang Jung Kim 1 , Sun Il Kim 1 , Jae Chul Park 1 , Sang Wook Kim 1 , Ihun Song 1 , U-In Chung 1
1 , Samsung Advanced Institute of Technology (SAIT), Yongin-si Gyeonggi-do Korea (the Republic of)

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10:45 AM -
BREAK

11:15 AM - **F4.4/MM4.4
Improvement of Performances and Stability of a-In-Ga-Zn-O TFT by Low-temperature Annealing.

Kenji Nomura 2 , Hideo Hosono 1 2 , Toshio Kamiya 1
2 Frontier Research Center, Tokyo Institute of Technology, Yokohama Japan, 1 Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama Japan

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11:45 AM - F4.5/MM4.5
High Mobility Amorphous Metal Oxynitride Thin Film Semiconductors.

Yan Ye 1 , Rodney Lim 1 , Anshu Gaur 1 , John White 1
1 AKT, Applied Materials, Inc, Santa Clara, California, United States

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12:00 PM - F4.6/MM4.6
High Performance Amorphous-oxide-semiconductor with Indium Tin Zinc Oxide (ITZO) for Thin Film Transistor.

Masashi Kasami 1 , Mami Nishimura 1 , Masayuki Itose 1 , Masahide Matsuura 1 , Shigeo Matsuzaki 1 , Hirokazu Kawashima 1 , Futoshi Utsuno 1 , Koki Yano 1
1 Advanced Research Laboratories, Idemitsu Kosan Co., Ltd., Chiba Japan

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12:15 PM - F4.7/MM4.7
Transparent MgZnO-based Metal-semiconductor Field Effect Transistors and Devices.

Alexander Lajn 1 , Heiko Frenzel 1 , Tobias Diez 1 , Fabian Kluepfel 1 , Friedrich Schein 1 , Holger von Wenckstern 1 , Marius Grundmann 1
1 Semiconductor physics group, University of Leipzig, Leipzig , Saxony, Germany

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12:30 PM - F4.8/MM4.8
Low-temperature Processing of Metal-semiconductor Field-effect Transistors Based on Amorphous Gallium-indium-zinc-oxide and Indium-zinc-oxide Thin Films.

Michael Lorenz 1 , Alexander Lajn 1 , Heiko Frenzel 1 , Holger von Wenckstern 1 , Marius Grundmann 1 , Pedro Barquinha 2 , Elvira Fortunato 2 , Rodrigo Martins 2
1 , Universität Leipzig - Institut für Experimentelle Physik II, Leipzig Germany, 2 CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, Caparica Portugal

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12:45 PM - F4.9/MM4.9
Thermal Annealing and Time Dependent Electric Field Gating Studies of Conductivity Stability in Amorphous Indium Zinc Oxide Thin-film Transistors.

Charles Sievers 1 2 , Thomas Gennett 2 , Joseph Berry 2 , David Ginley 2 , John Perkins 2 , Charles Rogers 1
1 Department of Physics, University of Colorado, Boulder, Boulder, Colorado, United States, 2 , National Renewable Energy Laboratory, Golden, Colorado, United States

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F5/MM5: Joint Session: Solution Processed Metaloxide Semiconductor
Session Chairs
Erin Ratcliff
Heiko Thiem
Tuesday PM, November 30, 2010
Constitution B (Sheraton)

2:30 PM - **F5.1/MM5.1
Low Temperature Processed Amorphous Oxide Semiconductor Thin-film Transistors.

John Wager 1 , Ken Hoshino 1 , Layannah Feller 1 , Rick Presley 1
1 School of EECS, Oregon State University, Corvallis, Oregon, United States

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3:00 PM - F5.2/MM5.2
Solution-processed Aluminum Indium Oxide Thin-film Transistor with Low Temperature Annealing.

Young Hwan Hwang 1 , Seok-Jun Seo 1 , Jun-Hyuck Jeon 1 , Byeong-Soo Bae 1
1 Lab. Optical Materials & Coating (LOMC), Dept. of Materials Science & Engineering, KAIST, Daejeon Korea (the Republic of)

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3:15 PM - F5.3/MM5.3
ZnBeMgO Nanostructured Based UV Detectors by Spin Coating.

Neeraj Panwar 1 , Jose Liriano 1 , Ram Katiyar 1
1 Department of Physics, University of Puerto Rico, San Juan United States

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3:30 PM - F5.4/MM5.4
Synthesis of Morphologically Controlled ZnO Nanostructures and Spray Deposition of Hybrid ZnO/Ag Nanostructured Films for Transparent Conductor Applications.

Saahil Mehra 1 , Rodrigo Noriega 5 , Mark Christoforo 3 , Sujay Phadke 4 , Dietm