Meetings & Events

 

MRS Fall 2010 Meeting Logo

2010 MRS Fall Meeting & Exhibit

November 29-December 3, 2010 | Boston
Meeting Chairs
: Ana Claudia Arias, Robert F. Cook, Clemens Heske, Shu Yang

Symposium W : Nanowires---Growth and Device Assembly for Novel Applications

2010-11-29   Show All Abstracts

Symposium Organizers

Ritesh Agarwal University of Pennsylvania
Wei Lu University of Michigan
Oliver Hayden Siemens AG
Akram Boukai University of Michigan
W1: Nanowire Opening Session
Session Chairs
Wei Lu
Monday AM, November 29, 2010
Ballroom C, 3rd floor (Hynes)

9:30 AM - **W1.1
Semiconductor Nanowires: Building Blocks for Today and the Future.

Charles Lieber 1
1 , Harvard University, Cambridge, Massachusetts, United States

Show Abstract

10:00 AM - W1.2
Tuning the Color of Silicon Nanowires.

Linyou Cao 1 , Mark Brongersma 2
1 , University of California, Berkeley, Berkeley, California, United States, 2 , Stanford University, Stanford, California, United States

Show Abstract

10:15 AM - W1.3
Transforming Semiconductor Nanowires Into Heterostructures and Superlattices by Size-dependent Cation Exchange Reactions.

Ritesh Agarwal 1 , Bin Zhang 1 , Yeonwoong Jung 1 , Hee-Suk Chung 1 , Lambert van Vugt 1 , Ju Li 1
1 Materials Science & Engineering, University of Pennsylvania, Philadelphia, Pennsylvania, United States

Show Abstract

10:30 AM - W1.4
Room Temperature Photoluminescence in Silicon Nanowires.

Vladimir Sivakov 1 , Felix Voigt 1 2 , Florian Talkenberg 1 , Bjoern Hoffmann 1 , Gerald Broenstrup 1 , Gottfried Bauer 2 , Silke Christiansen 3 1
1 , Institute of Photonic Technology, Jena Germany, 2 , Carl-von-Ossietzky University, Oldenburg, Germany, 3 , Max Planck Institute for the Science of Light, Erlangen Germany

Show Abstract

10:45 AM - W1.5
Thermoelectric Properties of Nanostructured Tensile Strained Silicon.

Xiao Guo 1 , Xianhe Wei 1 , Arun Kota 1 , Anish Tuteja 1 , Akram Boukai 1
1 Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan, United States

Show Abstract

11:00 AM -
BREAK

W2: Nanowire Growth I
Session Chairs
Ritesh Agarwal
Monday AM, November 29, 2010
Ballroom C, 3rd floor (Hynes)

11:30 AM - **W2.1
Growth of Hybrid Group IV-group III-V Nanowires.

Frances Ross 1
1 , IBM T.J. Watson Research Center, Yorktown Heights, New York, United States

Show Abstract

12:00 PM - W2.2
Copper as Seed Particle Material for InP Nanowires.

Karla Hillerich 1 , Maria Messing 1 , Reine Wallenberg 2 , Jonas Johansson 1 , Knut Deppert 1 , Kimberly Dick 1 2
1 Solid State Physics, Lund University, Lund Sweden, 2 nCHREM/Polymer and Materials Chemistry, Lund University, Lund Sweden

Show Abstract

12:15 PM - W2.3
Elementary Processes in Nanowire Growth.

Jerry Tersoff 1 , Klaus Schwarz 1
1 , IBM Watson Center, Yorktown Heights, New York, United States

Show Abstract

12:30 PM - W2.4
Growing Nanowires without Catalysts: Vapor-solid Process or Vapor-liquid-solid Process?

Xudong Wang 1 , Jian Shi 1
1 Materials Science and Engineering, University of Wisconsin Madison, Madison, Wisconsin, United States

Show Abstract

12:45 PM - W2.5
Anomalous Nucleation of Si Nanowires Smaller than 10nm.

Lea Marlor 1 , Bong Joong Kim 1 , Jerry Tersoff 2 , Frances Ross 2 , Eric Stach 1
1 School of Materials Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, United States, 2 IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York, United States

Show Abstract

W3: Nanowire Growth Mechanisms
Session Chairs
Akram Boukai
Monday PM, November 29, 2010
Ballroom C, 3rd floor (Hynes)

2:30 PM - **W3.1
Screw Dislocation-driven Nanomaterial Growth: Nanowire Trees, Nanotubes, and Beyond.

Song Jin 1
1 , University of Wisconsin-Madison, Madison, Wisconsin, United States

Show Abstract

3:00 PM - W3.2
Step Flow and Interfacial Dynamics During Catalytic Germanium Nanowire Growth.

Andrew Gamalski 1 , Caterina Ducati 2 , Renu Sharma 3 , Stephan Hofmann 1
1 Electrical Engineering, University of Cambridge, Cambridge United Kingdom, 2 Materials Science and Metallurgy, University of Cambridge, Cambridge United Kingdom, 3 Nanofabrication Research Group, National Institute of Standards and Technology, Gaithersburg, Maryland, United States

Show Abstract

3:15 PM - W3.3
Growth Mechanisms of InSb Nanowires by Chemical Beam Epitaxy.

Alexander Vogel 1 , Johannes de Boor 1 , Michael Becker 1 , Samuel Mensah 1 , Joerg Wittemann 1 , Peter Werner 1 , Volker Schmidt 1
1 Exp. II, Max Planck Institute of Microstructure Physics, Halle (Saale) Germany

Show Abstract

3:30 PM - W3.4
Simulation of VLS Nanowire Growth with Axial Grain Boundaries and Comparison to Experimental Structures via Cross-sectional TEM.

Edwin Schwalbach 1 , Eric Hemesath 1 , Lincoln Lauhon 1 , Peter Voorhees 1
1 Dept. of Materials Science and Engineering, Northwestern University, Evanston, Illinois, United States

Show Abstract

3:45 PM - W3.5
Controlling the Transition Region Width of VLS-Grown Axial Nanowire Heterostructures by Catalyst Alloying.

Daniel Perea 1 , S. Tom Picraux 1
1 Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico, United States

Show Abstract

4:00 PM - *
Break

4:30 PM - W3.6
Controlled Growth of Three Dimensional Kinked-silicon Nanowire Structures.

Soonshin Kwon 2 , Ji Hun Kim 1 , Zack Chen 1 , Jie Xiang 1 2
2 Materials Science and Engineering, Univ. California, San Diego, La Jolla, California, United States, 1 Electrical and Computer Engineering, Univ. California, San Diego, La Jolla, California, United States

Show Abstract

4:45 PM - W3.7
Fabrication of Ga2O3 - SnO2 Heterostructure Nanowires by Vapor-liquid-solid Method and Atomic Layer Deposition and Their Gas Sensing Properties.

Yun-Guk Jang 1 , Won-Sik Kim 1 , Dai Hong Kim 1 , Seong-Hyeon Hong 1
1 Department of Materials Science and Engineering , Seoul National University, Seoul Korea (the Republic of)

Show Abstract

5:00 PM - W3.8
Atomic Layer Epitaxy on Nanowire Surfaces at Low Temperatures.

Ren Bin Yang 1 , Nikolai Zakharov 1 , Oussama Moutanabbir 1 , Kurt Scheerschmidt 1 , Li-Ming Wu 2 , Ulrich Goesele 1 , Julien Bachmann 3 , Kornelius Nielsch 3
1 , Max Planck Institute , Halle Germany, 2 State Key Laboratory of Structural Chemistry, Institute of Research on the Structure of Matter, Fujian China, 3 Institute of Applied Physics, University of Hamburg, Hamburg Germany

Show Abstract

5:15 PM - W3.9
Tuning the Electronic Properties of Core-shell Nanowires through Control of Strain.

Melodie Fickenscher 1 , Mohammad Montazeri 1 , Howard Jackson 1 , Leigh Smith 1 , Jan Yarrison-Rice 2 , Jung Hyun Kang 3 , Qiang Gao 3 , Hoe Tan 3 , Chennupati Jagadish 3
1 Department of Physics, University of Cincinnati, Cincinnati, Ohio, United States, 2 Department of Physics, Miami University, Oxford, Ohio, United States, 3 Department of Electronic Materials Engineering, Australian National University, Canberra, Australian Capital Territory, Australia

Show Abstract

5:30 PM - W3.10
Self-induced and Site-selective Growth of Vertical InAs Nanowire Arrays on Si (111) by Molecular Beam Epitaxy.

Gregor Koblmuller 1 , Simon Hertenberger 1 , Kristijonas Vizbaras 1 , Max Bichler 1 , Jinping Zhang 2 , Timothy Veal 3 , Ian Maskery 3 , Gavin Bell 3 , Gerhard Abstreiter 1
1 Technical University Munich, Walter Schottky Institut, Garching Germany, 2 Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou China, 3 Department of Physics, University of Warwick, Coventry United Kingdom

Show Abstract

5:45 PM - W3.11
Controlling the Growth Location and Length of Indium Nanowires by Introducing Patterns on Substrates.

Wardhana Sasangka 1 2 , Chee Lip Gan 1 2 , Carl Thompson 2 3 , Daquan Yu 4
1 School of Materials Science and Engineering, Nanyang Technological University, Singapore Singapore, 2 Advanced Materials for Micro- and Nano-Systems, Singapore-MIT Alliance, Nanyang Technological University, Singapore Singapore, 3 Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, United States, 4 Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore Singapore

Show Abstract

2010-11-30   Show All Abstracts

Symposium Organizers

Ritesh Agarwal University of Pennsylvania
Wei Lu University of Michigan
Oliver Hayden Siemens AG
Akram Boukai University of Michigan
W4: Nanowire Characterization
Session Chairs
Oliver Hayden
Tuesday AM, November 30, 2010
Ballroom C, 3rd floor (Hynes)

9:30 AM - **W4.1
Atom-level View of Dopant and Catalyst Incorporation in Nanowires.

Lincoln Lauhon 1
1 Materials Science and Engineering, Northwestern University, Evanston, Illinois, United States

Show Abstract

10:00 AM - W4.2
Doping of Vertical Si Nanowires and Carrier Profiling by Scanning Spreading Resistance Microscopy.

Xin Ou 1 2 , Pratyush Das Kanungo 2 , Reinhard Koegler 1 , Peter Werner 2 , Ulrich Goesele 2 , Wolfgang Skorupa 1
1 , Forschungszentrum Dresden-Rossendorf, Dresden Germany, 2 , Max Planck Institute of Microstructure Physics, Halle Germany

Show Abstract

10:15 AM - W4.3
Direct Correlation of Structural and Optical Properties in Wurtzite/Zinc-blende GaAs Nanowire Heterostructures.

Martin Heiss 1 2 , Sonia Conesa-Boj 1 3 , Emanuele Uccelli 1 2 , Francesca Peiro 3 , Joan Ramon Morante 4 , Jordi Arbiol 5 , Anna Fontcuberta i Morral 1 2
1 LMSC, Institut des Matériaux , École Polytechnique Fédérale de Lausanne, Lausanne Switzerland, 2 Walter Schottky Institute, Technical University Munich, Garching Germany, 3 Departament d’Electrònica, Universitat de Barcelona, Barcelona, CAT, Spain, 4 , Catalonia Institute for Energy Research, Barcelona, CAT, Spain, 5 ICREA and Institut de Ciencia de Materials de Barcelona, CISC, Bellaterra, CAT, Spain

Show Abstract

10:30 AM - W4.4
Crystallographic Orientational Imaging of Gallium Nitride Nanowires via Confocal Raman Imaging.

Adam Schwartzberg 1 , Jeffrey Urban 1
1 The Molecular Foundry, Lawrence Berkeley National Labs, Berkeley, California, United States

Show Abstract

10:45 AM - W4.5
Atom-probe Tomographic Analyses of Al-catalyst Grown Si Nanowires.

Oussama Moutanabbir 2 , Dieter Isheim 1 3 , Horst Blumtritt 2 , Ulrich Goesele 2 , David Seidman 1 3
2 , Max Planck Institute of Microstructure Physics, Halle Germany, 1 Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois, United States, 3 Northwestern University Center for Atom-Probe Tomography, Northwestern University, Evanston, Illinois, United States

Show Abstract

11:00 AM - *
Break

11:30 AM - W4.6
Direct Measurement of Strain in Germanium-silicon Core-shell Nanowires.

Aditya Mohite 1 2 , Shadi Dayeh 1 , Wei Tang 3 , Gregory Swadener 4 , S. Picraux 1 , Han Htoon 1 2
1 Center for Integrated Nanotechnologies, Los Alamos National Lab, Los Alamos, New Mexico, United States, 2 Chemistry and Applied Spectroscopy, Los Alamos National Lab, Los Alamos, New Mexico, United States, 3 Material Science and Engineering, Universityof California Los Aangeles, Los Angeles, California, United States, 4 Mechanical Engineering, Aston University, Birmingham, Birmingham, United Kingdom

Show Abstract

11:45 AM - W4.7
Tuning the Electronic Properties of Ultra-strained Silicon Nanowires.

Alois Lugstein 1 , Mathias Steinmair 1 , Andreas Steiger 1 , Hans Kosina 1 , Emmerich Bertagnolli 1
1 , Technical university of vienna, Vienna Austria

Show Abstract