The development of crystalline epitaxial oxides on semiconductors (COS) has triggered an interest in developing a new avenue for the integration of these oxides on a number of mature semiconductor platforms, such as Si, Ge, GaAs and GaN. Complex oxides that have been successfully integrated with these semiconductors have diverse properties ranging from a high dielectric constant, with applications to the well-established Si MOSFET, to ferroelectricity, superconductivity, non-linear optical properties and magnetism. Current research focuses on a number of exciting possibilities and difficult challenges such as controlling their properties, integration with the semiconductor platform, and solving fundamental aspects of epitaxial growth.
The integration of functional oxides with semiconductors offer new ways to sense, store and manipulate information and thus are well suited for broader applications in the field of Information and Communication Technology. Many oxide properties are sensitive to temperature, strain, electric and magnetic fields, making them attractive materials for sensors, optical interconnect, automotive radar, photonics, solid state lighting, microelectromechanical systems, and photocatalysis. Monolithic integration with semiconductors will enable the added functionalities to be incorporated on a single chip, which leverages state-of-the-art semiconductor device technology and data processing systems.
The aim of this symposium is to connect interdisciplinary topics related to physics, materials science and engineering through invited abstracts in order further build the COS community and accelerate the development of these materials toward applications.