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2015 MRS Fall Meeting Logo2015 MRS Fall Meeting & Exhibit

November 29-December 4, 2015 | Boston
Meeting Chairs: T. John Balk, Ram Devanathan, George G. Malliaras, Larry A. Nagahara, Luisa Torsi

Symposium FF—Integration of Functional Oxides with Semiconductors

The development of crystalline epitaxial oxides on semiconductors (COS) has triggered an interest in developing a new avenue for the integration of these oxides on a number of mature semiconductor platforms, such as Si, Ge, GaAs and GaN. Complex oxides that have been successfully integrated with these semiconductors have diverse properties ranging from a high dielectric constant, with applications to the well-established Si MOSFET, to ferroelectricity, superconductivity, non-linear optical properties and magnetism. Current research focuses on a number of exciting possibilities and difficult challenges such as controlling their properties, integration with the semiconductor platform, and solving fundamental aspects of epitaxial growth.

The integration of functional oxides with semiconductors offer new ways to sense, store and manipulate information and thus are well suited for broader applications in the field of Information and Communication Technology. Many oxide properties are sensitive to temperature, strain, electric and magnetic fields, making them attractive materials for sensors, optical interconnect, automotive radar, photonics, solid state lighting, microelectromechanical systems, and photocatalysis. Monolithic integration with semiconductors will enable the added functionalities to be incorporated on a single chip, which leverages state-of-the-art semiconductor device technology and data processing systems.

The aim of this symposium is to connect interdisciplinary topics related to physics, materials science and engineering through invited abstracts in order further build the COS community and accelerate the development of these materials toward applications.

Topics will include:

  • Theory and modeling
  • Critical issues and challenges of oxide-semiconductor epitaxy
  • Perovskites and non perovskites on Si and Ge, compound semiconductor
  • Fundamentals of growth, doping, composition control
  • Electronic and ionic transport
  • Strain related phenomena, point and extended defect generation and propagation
  • Advanced physical characterization
  • Micro and nanostructuring, device processing
  • Properties at nanoscale, interface related phenomena
  • Applications in logic and memory
  • Applications in optical information processing
  • Applications in catalysis

Invited Speakers:

  • Stefan Abel (IBM Research GmbH, Switzerland)
  • Ayan Roy Chaudhuri (Leibniz University Hannover, Germany)
  • Catherine Dubourdieu (CNRS Lyon, France)
  • John Ekerdt (The University of Texas at Austin, USA)
  • Roman Engel-Herbert (Pennsylvania State University, USA)
  • Frank Grosse (Paul-Drude-Institut Berlin, Germany)
  • Apurba Laha (Indian Institute of Technology Bombay, India)
  • Philippe Lecoeur (University Paris-Sud, France)
  • Jean-Pierre Locquet (Katholic University of Leuven, Belgium)
  • Joseph Ngai (University of Texas, Arlington, USA)
  • Sabina Spiga (CNR-IMM, MDM Laboratory, Italy)
  • Katherine Ziemer (Northeastern University, USA)

Symposium Organizers

Alex Demkov
The University of Texas
Department of Physics

Jean Fompeyrine
IBM Research
Säumerstrasse 4, CH-8803 Rüschlikon, Switzerland

Joerg Osten
Leibniz Universit Hannover
Institute for Electronic Materials and Devices

Fred Walker
Yale University
Department of Applied Physics