This symposium will cover the scientific and technological exploration of materials, devices and technologies for emerging non-volatile memories. A wide range of topics will be covered from fundamental material properties, nonvolatile memory devices, and integration issues, to demonstration and commercially available devices. Contributions are expected to explore the use of either inorganic or organic materials as well as inorganic/organic hybrid materials to realize deep nanoscale memory nodes. The focused areas include; semiconducting and metallic nanocrystal memories, SONOS, MRAM, FeRAM, ReRAM, chalcogenide materials, nanoelectromechanical systems, as well as polymer materials and molecular memories. The importance of this technological field is increasing since incumbent semiconductor non-volatile devices such as Flash memory are now facing serious future scaling problems. Recently, significant research effort has been focused worldwide on the realization of a nonvolatile memory with the characteristics of very fast random-access-memories and long data retention times. Nonvolatile memories are one of the most valuable products of the semiconductor industry. Moreover, application of nonvolatile memory devices to flexible electronics is an interesting approach. These trends have been confirmed by the increasing number of submitted abstracts in the field compared to the previous symposiums.