Semiconductor nanowires (IVs, III-Vs, II-VIs, oxides, II-Vs, chalcogenides…), continue to attract international interest for both fundamental and applied studies after some 15 years of intense and ongoing research effort. Nanowires allow for axial/radial heterostructure together with advanced doping schemes, and reliable positioning strategies, making them ideal nanoscale building blocks for next generation devices. Recent examples include efficient solar cells, nanolasers, transistors, quantum devices and bio-sensors. Despite these impressive achievements, the majority of nanowire devices reported to date are still based on standard geometries, heterostructures or doping schemes. Progress is still required in understanding their fundamental growth mechanisms, accessing/controlling their electronic and optical properties and extending their device functionalities beyond conventional limits.
This multidisciplinary symposium extends across physics, chemistry, materials science, and biology in all fundamental and applied aspects of semiconductor 1D nanostructures. It will focus on advanced semiconductor nanostructures: compositional homogeneity, interfaces, crystal phases, heterostructures, novel geometries and scalable positioning strategies. Integration and interconnection on flexible/cost-effective/biocompatible substrates are of interest for future applications. Emphasis on studies combining controlled synthesis with improved electronic, optical, sensing and/or energy generation/storage performance will be sought. Devices taking advantage of the current challenges faced by nanowires, such as their surface-dominated properties, crystal phase/composition variations and unconventional heterostructuring will be encouraged. New applications of nanowire-based devices to probe physical, chemical or biological system properties are also of interest to this symposium.