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2015 MRS Fall Meeting Logo2015 MRS Fall Meeting & Exhibit

November 29-December 4, 2015 | Boston
Meeting Chairs: T. John Balk, Ram Devanathan, George G. Malliaras, Larry A. Nagahara, Luisa Torsi

Symposium RR—Wide-Bandgap Materials for Energy Efficiency—Power Electronics and Solid-State Lighting

Wide-bandgap materials are critical for improved energy efficiency, primarily due to the advantages they confer to power electronics and solid-state lighting. This symposium will address a broad range of wide-bandgap materials topics critical to the success of both of these applications. The last decade has witnessed explosive growth in solid-state lighting, with many commercial products now available. However, further innovations in materials and materials architectures are needed to achieve efficient emission across the entire visible spectrum at the high current densities required by commercial applications. A similar revolution is now being launched in power electronics, where wide-bandgap materials promise significant improvements in power converter efficiency, reliability, and cost. However, materials issues currently limit these improvements in both the III-N and SiC systems. Materials considerations also dictate the device structures that are feasible; notably, vertical device architectures are undeveloped in the III-N system due to the high cost and limited size of native substrates, but the availability of heterostructures in this materials system affords design flexibility not available in SiC. This symposium will address a broad array of critical topics in this important area, which has gained broad interest world-wide as nations recognize the need for improved energy efficiency.

Topics will include:

  • Bulk crystals and substrates
  • Ultra-wide-bandgap materials beyond SiC and GaN
  • Epitaxial growth
  • Doping of WBG materials
  • Carrier recombination dynamics
  • Advanced materials characterization techniques
  • Point, line, and planar defects
  • Materials impact on device reliability
  • Low-dimensional structures for new devicefunctionality
  • Novel polarization effects and utilization indevices
  • In-rich InGaN synthesis and chemistry for lightemitters
  • Gate and passivation dielectrics for WBGmaterials
  • A tutorial complementing this symposium is tentatively planned.

Invited Speakers:

  • Hiroshi Amano (Nagoya University, Japan)
  • Avi Bar-Cohen (DARPA, USA)
  • Jim Cooper (Purdue University, USA)
  • Parijat Deb (Phlips Lumileds, USA)
  • Mitsuru Funato (Kyoto University, Japan)
  • Debdeep Jena (Cornell University, USA)
  • Tetsu Kachi (Toyota, Japan)
  • Shashank Krishnamurthy (United Technologies Research Center, USA)
  • Hideto Miyake (Mie University, Japan)
  • Burak Ozpineci (Oak Ridge National Laboratory, USA)
  • John Palmour (Cree, USA)
  • Piotr Perlin (Unipress, Poland)
  • Siddharth Rajan (Ohio State University, USA)
  • Dan Twitchen (Element Six, USA)
  • Chris Van de Walle (University of California, Santa Barbara, USA)
  • Christian Wetzel (Rensselaer Polytechnic Institute, USA)
  • Joachim Wuerfl (Ferdinand Braun Institut Berlin, Germany)

Symposium Organizers

Robert Kaplar
Sandia National Laboratories

Madhu Chinthavali
Oak Ridge National Laboratory

Martin Kuball
University of Bristol
H. H. Wills Physics Laboratory
United Kingdom

Tetsuya Takeuchi
Meijo University