Point and electronic defects are intimately coupled in oxide materials and are strong functions of not only impurity doping but also external oxygen activity and cation stoichiometry in mixed cation systems. For electronic and electrochemical devices, the equilibration of point and electronic defects at surfaces, electrode interfaces, grain boundaries and domain boundaries can not only have a controlling effect on the macroscopic conduction behavior, but can also lead to entirely new functionality. For example, the control of charge injection at oxide-electrode interfaces and the creation of high-mobility 2-dimensional electron gasses at oxide interfaces are governed by lattice and electronic defect equilibria. Furthermore, the spatio-temporal redistribution of charged lattice defects under externally imposed electrical or chemical potentials, as mediated by internal interfaces and electrode interfaces, often dictates the time-dependent properties of functional oxide devices. Such time-dependent defect redistribution processes can be deleterious in some applications, such as increases in leakage current in capacitive devices, or can be exploited in applications such as resistive memory switching. This symposium aims to bring together the materials and device synthesis, characterization, theory and simulation research efforts aimed at understanding the equilibrium and non-equilibrium segregation and transport of ionic and electronic defects at surfaces and interfaces in functional oxide materials. New computational and experimental approaches for understanding segregation phenomena in oxide materials will be highlighted.