Symposium EM05—Oxide InterfacesLattice and Electronic Defect Interactions

Point and electronic defects are intimately coupled in oxide materials and are strong functions of not only impurity doping but also external oxygen activity and cation stoichiometry in mixed cation systems. For electronic and electrochemical devices, the equilibration of point and electronic defects at surfaces, electrode interfaces, grain boundaries and domain boundaries can not only have a controlling effect on the macroscopic conduction behavior, but can also lead to entirely new functionality. For example, the control of charge injection at oxide-electrode interfaces and the creation of high-mobility 2-dimensional electron gasses at oxide interfaces are governed by lattice and electronic defect equilibria. Furthermore, the spatio-temporal redistribution of charged lattice defects under externally imposed electrical or chemical potentials, as mediated by internal interfaces and electrode interfaces, often dictates the time-dependent properties of functional oxide devices. Such time-dependent defect redistribution processes can be deleterious in some applications, such as increases in leakage current in capacitive devices, or can be exploited in applications such as resistive memory switching. This symposium aims to bring together the materials and device synthesis, characterization, theory and simulation research efforts aimed at understanding the equilibrium and non-equilibrium segregation and transport of ionic and electronic defects at surfaces and interfaces in functional oxide materials. New computational and experimental approaches for understanding segregation phenomena in oxide materials will be highlighted.

Topics will include:

  • Defect energetics and space charge segregation at surfaces and interfaces
  • Oxide 2-dimensional electron gases
  • Band offsets and charge injection at oxide interfaces
  • Defect mobility at internal interfaces
  • Interfacial dielectric degradation mechanisms
  • Advances in the theory and simulation of defects, ionic transport and transport-mediated functionality
  • The role of interfacial boundary conditions on resistive switching
  • Novel in-situ and in-operando characterization techniques

Invited Speakers:

  • Koji Amezawa (Tohoku University, Japan)
  • Leonard Brillson (Ohio State University, USA)
  • Dragan Damjanovic (École Polytechnique Fédérale de Lausanne, Switzerland)
  • Douglas Irving (North Carolina State University, USA)
  • Andreas Klein (Technische Universität Darmstadt, Germany)
  • Ho Nyung Lee (Oak Ridge National Laboratory, USA)
  • Lane Martin (University of California, Berkeley, USA)
  • David Mebane (University of West Virginia, USA)
  • Dane Morgan (University of Wisconsin-Madison, USA)
  • Stuart Parkin (Max Planck Institute for Microstructure Physics, Germany)
  • Nicola Perry (Kyushu University, Japan)
  • Alp Sehirlioglu (Case Western Reserve University, USA)
  • Roger De Souza (RWTH Aachen University, Germany)
  • Rainer Waser (RWTH Aachen University, Germany)
  • Bilge Yildiz (Massachusetts Institute of Technology, USA)

Symposium Organizers

Elizabeth C. Dickey
North Carolina State University
Department of Materials Science and Engineering
USA
919-515-3920, ecdickey@ncsu.edu

Ulrich Aschauer
University of Bern
Department of Chemistry and Biochemistry
Switzerland

Nicole A. Benedek
Cornell University
Department of Materials Science and Engineering
USA
607-255-6429, nbenedek@cornell.edu

Sakyo Hirose
Murata Manufacturing Co., Ltd.
R & D Center for Frontier Technology
Japan
81-(0)70-2280-8418, h_sakyo@murata.com