2019 MRS Fall Meeting & Exhibit

Call for Papers

Symposium MS02—Mechanically Coupled and Defect-Enabled Functionality in Atomically Thin Materials

Local (e.g. defect structures) and global (e.g. mechanical stress) nonequilibrium is generally difficult to control and characterize yet offers unprecedented ability to control a host of material properties in advanced technological applications such as quantum photonics, nano electronics, electrocatalysis, and energy conversion. As one example, unprecedented opportunity for dynamic property modification can be found in atomically thin materials due their ability to experience elastic strain on the order of several percent without releasing that energy via dislocation formation or other inelastic relaxation mechanisms. Mechanically coupled and defect-enabled phenomena also allow for new functionalities and device architectures previously unachievable, such as well-defined single photon source generation and adaptive optoelectronic components and sensors.

Given the impressive recent developments in this field, this symposium will promote communication and collaboration among interdisciplinary researchers working on modifications of the intrinsic materials physics of 2D materials through strain and defect engineering. It will mainly focus on beyond-graphene 2D materials as well as the synthesis, materials physics, and applications enabled by emergent strain- and defect-enabled phenomena in these materials.



Topics will include:

  • Role of strain coupling and defects in modifying physico-chemical properties of 2D materials such as electronic band gap, carrier mobility, piezoelectric effects, magnetism, optical, thermal, thermoelectric, and catalytic/electrochemical (e.g. hydrogen evolution reaction)
  • Computational and theoretical approaches to model/predict defect-enabled and strain-coupled behavior in 2D materials
  • Advancements in the development of new computational methodologies, experimental techniques, and synthesis strategies for deterministic creation of defect- and strain-engineered 2D materials
  • Device-level performance relationships including predictions or demonstration of nanoscale architectures & heterostructures whose behavior benefits from strain coupling or defect structures

Invited Speakers:

  • Deji Akinwande (University of Texas at Austin, USA)
  • Mete Atatüre (University of Cambridge, United Kingdom)
  • Andrea Ferrari (University of Cambridge, United Kingdom)
  • Joshua Hendrickson (Air Force Research Laboratory, USA)
  • Pinshane Huang (University of Illinois at Urbana-Champaign, USA)
  • Luis Jauregui (University of California, Irvine, USA)
  • Kyung-Suk Kim (Brown University, USA)
  • Philip Kim (Harvard University, USA)
  • Chung Ning (Jeanie) Lau (Ohio State University, USA)
  • Ju Li (Massachusetts Institute of Technology, USA)
  • Jun Luo (Rice University, USA)
  • Kayla Nguyen (Cornell University, USA)
  • Ruth Pachter (Air Force Research Laboratory, USA)
  • Joan Redwing (The Pennsylvnia State University, USA)
  • Evan Reed (Stanford University, USA)
  • Stephan Roche (Institut Català de Nanociència i Nanotecnologia, Spain)
  • Qing Hua Wang (Arizona State University, USA)
  • Yaguo Wang (University of Texas at Austin, USA)
  • Ronggui Yang (University of Colorado Boulder, USA)
  • Nai-Chang Yeh (California Institute of Technology, USA)
  • Jinkyoung Yoo (Los Alamos National Laboratory, USA)
  • Xiaolin Zheng (Stanford University, USA)

Symposium Organizers

Michael Pettes
Los Alamos National Laboratory
Materials Physics & Applications, Center for Integrated Nanotechnologies
USA
505-667-8665, pettesmt@lanl.gov

Judy Cha
Yale University
Department of Mechanical Engineering & Materials Science
USA
203-737-7293, jeeyoung.cha@yale.edu

Gwan-Hyoung Lee
Yonsei University
Materials Science and Engineering
Republic of Korea
82-2-884-3198, gwanlee@snu.ac.kr

SungWoo Nam
University of Illinois at Urbana-Champaign
Mechanical Science and Engineering
USA
217-300-0267, swnam@illinois.edu