Speakers

Plenary Speakers

Shigefusa Chichibu, Tohoku University
Impact of Vacancy Complexes on the Nonradiative Recombination Processes in III-N Devices

Nicolas Grandjean, École Polytechnique Fédérale de Lausanne
Efficiency of Nitride LEDs—Impact of Point and Extended Defects

Zetian Mi, University of Michigan
Emerging Applications of III-Nitride Nanocrystals

Umesh Mishra, University of California, Santa Barbara
Conventional and N-Polar GaN HEMTs for High Frequency and High Power Applications

Shuji Nakamura, University of California, Santa Barbara
InGaN VCSEL and Edge Emitting Lasers

Zlatko Sitar, North Carolina State University
How Do We Make AlGaN an Efficient Semiconductor?

Martin Strassburg, OSRAM
Industrial LED Development—From Red to UV

Jun Suda, Nagoya University
Development of Vertical GaN Power Devices

Invited Speakers

Martin Albrecht, Leibniz Institute for Crystal Growth
Alloy Properties Revealed by Electron Microscopy

Oliver Ambacher, Fraunhofer Institute
ScAlN-Based Ferroelectric and Piezoelectric Electro Acoustic Devices

Andrew Armstrong, Sandia National Laboratories
Defects and Device Performance of Al-Rich AlGaN HEMTs and Photodetectors

Guillaume Cassabois, Université de Montpellier
Boron Nitride—Its Physics and Applications

Ana Cros, University of Valencia
Electrical Force Microscopies for the Study of Nitride Semiconductors

Rafael Dalmau, HexaTech, Inc.
AlN Single Crystal Substrate Growth for UV Applications

Russell Dupuis, Georgia Institute of Technology
Progress in UV VCSEL Structures

Sven Einfeld, Leibniz Ferdinand Braun Institute
Nitride Distributed Feedback Lasers

Hiroshi Fujioka, Tokyo University
Sputtering of III-Nitrides and Device Performance of Sputtered Material

Yasufumi Fujiwara, Osaka University
Development of Semiconductor Intra-Center Photonics

Noëlle Gogneau, University of Paris-Saclay
GaN-Based Piezo-Generators

Izabella Grzegory, Unipress
Growth of Bulk GaN Crystals

Jung Han, Yale University
Nonpolar and Semipolar GaN for Solid-State Lighting

Matthew Hardy, U.S. Naval Research Laboratory
ScAlN and Nb2N Layers for Nitride Devices

Tamotsu Hashizume, Hokkaido University
Interface Control of Al2O3-Based MOS Structures for Advanced GaN Transistors

Johannes Herrnsdorf, University of Strathclyde
GaN-Based µLED Drive Circuit for Visible Light Communication

Hideki Hirayama, RIKEN
The State-of-the-Art in AlGaN UV LEDs

Robert Howell, Northrup Grumman Corporation
Super-Lattice Castellated FETs and Their Role in Next Generation RF Switches

Debdeep Jena, Cornell University
Ultrathin GaN/AlN QWs—Physics and Potential Applications

Yoshihiro Kangawa, Kyushu University
A New Theoretical Approach to Nitride Crystal Growth

Jeehwan Kim, Massachusetts Institute of Technology
Van der Waals Epitaxy of GaN Films on Graphene

Katsumi Kishino, Sophia University
III-N Nanocolumn Visible LEDs

Hu Liang, imec
Enhancement-Mode GaN-HEMT Technology on 200 mm Si

Robert Martin, University of Strathclyde
Challenges in Accurate Assessment of Nanorod Structures

Farid Medjdoub, Institute of Electronics, Microelectronics and Nanotechnology
AlN and AlGaN-Based HEMTs for Power Applications

Elke Meissner, Fraunhofer Institute
Defects in GaN Epitaxial Layers and Their Role in Electrical Transport

Matteo Meneghini, Università degli Studi di Padova
Reliability of Lateral and Vertical GaN Devices

Yutaka Mikawa, Mitsubishi Chemicals Corporation
Acidic Ammonothermal Growth of Bulk GaN

Tomoyoshi Mishima, Hosei University
High Breakdown Voltage Vertical P-N Junction GaN Diodes

Yusuke Mori, Osaka University
Na-Flux Growth of Bulk GaN

Yusuke Nakayama, Sony Corporation
Watt-Class Semipolar Green Lasers

Tetsuo Narita, Toyota
GaN Epitaxy for Vertical GaN Devices

Lorenzo Rigutti, University of Rouen
Quantitative Atom Probe Tomography of Ternary III-N Alloys

Stefan Schulz, Tyndall National Institute
Second Order Piezoelectricity and Role of Growth Direction in Nitrides

Ulrich Schwarz, Chemnitz University of Technology
Nitride-Based Bio-Detection Devices

James Speck, University of California, Santa Barbara
Nitride Tunnel Junction Devices

Qian Sun, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO)
Heteroepitaxy of GaN-Based Materials and Devices on Si

Tetsuya Takeuchi, Meijo University
Epitaxy and Performance of VCSEL Structures

Maria Tchernycheva, Université Paris-Sud
Applications of III-N Nanowire Arrays

Michael Uren, University of Bristol
Deep Levels in GaN Based Electronic Devices

Chris Van de Walle, University of California, Santa Barbara
Theory of Dopants and Defects in Ultrawide-Band-Gap Nitrides

Maria Vladimirova, CNRS-University of Montpellier
Indirect Exciton Spectroscopy in Nitride Heterostructures

Xinqiang Wang, Peking University
Growth of Ultrathin GaN Quantum Wells towards Deep Ultraviolet Light Sources

Tim Wernicke, Technischen Universität Berlin
High Quality AlGaN and Its UV LED Applications

Euijoon Yoon, Seoul National University
Micro-LEDs on Sapphire Nano-Membranes for Display Applications