Jun Suda, Nagoya University
Development of Vertical GaN Power Devices
Jun Suda, professor in the department of electronics at Nagoya University since 2017, is also the university’s director of CIRFE-Transformative Electronics Facilities (C-TEFs). He received his BE (1992), ME (1994) and PhD (1997) degrees from Kyoto University, and during those years worked on molecular-beam epitaxy (MBE) and structural and optical characterization of ZnMgSSe-strained quantum well structures for short-wavelength optoelectronics. In 1997, he became research associate at the university and began his work on group-III nitride semiconductors (III-N) and SiC. His research interests include optical/electrical/structural characterization of III-N and SiC materials, heteroepitaxial growth of III-N by MBE, functional integration of III-N and SiC materials, design and fabrication of SiC and GaN-based power devices, optoelectronic devices and MEMS devices. Since 2014, he has led the Japanese national project, “Research and Development of Fundamental Technologies for GaN Vertical Power Devices” for the Cross-ministerial Strategic Innovation Promotion Program (SIP), sponsored by the Council for Science, Technology and Innovation (CSTI). He has authored or co-authored over 200 publications in peer-reviewed journals and is the inventor of over 20 pending patents.