Keynote Speakers

Yoshiyuki YonezawaYoshiyuki Yonezawa
Progress and Challenge in High to Ultra-High Voltage SiC Power Device Technology

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Monday, September 18
11:00 am – 11:45 am
Thurgood Marshall Ballroom, North Salon

Yoshiyuki Yonezawa is a senior scientist at the National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan, where he heads the Power Device Fundamentals Team in the Advanced Power Electronics Research Center. From 1989 to 2013, he was an engineer at Fuji Electric Co., Ltd., where as leader of the SiC group he made research contributions in solid-state laser system development, hard-disk media, dielectric thin films for DC/DC converters, and SiC power devices. Yonezawa joined AIST in 2013, where his current research involves SiC ultra-high-voltage device and related fundamental technology. He received his PhD degree from the Tokyo Institute of Technology in 2011, based on his work on SiC devices and solution growth of SiC crystal. He was a visiting scholar at Stanford University from 1996 to 1998.

Yuri KhlebnikovYuri Khlebnikov
Status and Challenges for Large-Diameter SiC Substrates

Monday, September 18
12:00 pm – 12:45 pm
Thurgood Marshall Ballroom, West Salon

Yuri Khlebnikov is a research scientist in the Materials Business Unit at Wolfspeed, A Cree Company. He has 19 years of experience working with silicon carbide and related wide bandgap materials. Khlebnikov holds a PhD degree in electrical engineering from the University of South Carolina. He started his career in Columbia, South Carolina in 2000, as a founder and former president of Bandgap Technologies, Inc., a company developing high-quality SiC substrates. At Bandgap Technologies, Khlebnikov successfully managed numerous U.S. Department of Defense (DoD)-funded projects. He also served as director of bulk crystal growth at INTRINSIC Semiconductor Corporation. He has more than 30 publications, 10 disclosures and three patents related to wide bandgap materials.

Tsunenobu KimotoTsunenobu Kimoto
Epitaxial Material Challenges for High-Voltage SiC Devices

Monday, September 18
2:15 pm – 3:00 pm
Thurgood Marshall Ballroom, West Salon

Tsunenobu Kimoto received his BE and ME degrees in electrical engineering from Kyoto University, Japan, in 1986 and 1988, respectively. He joined Sumitomo Electric Industries, Ltd. in April of 1988, where he conducted R&D of amorphous Si solar cells and semiconducting diamond material. In 1990, he started his academic career as a research associate at Kyoto University and, based on his work on SiC epitaxy, material characterization and high-voltage diodes, received a PhD degree from the same university in 1996. From 1996 to 1997, Kimoto was a visiting scientist at Linköping University, Sweden. Kimoto is currently a professor in the Department of Electronic Science and Engineering at Kyoto University. His main research activities include SiC epitaxial growth, optical and electrical characterization, defect electronics, ion implantation, MOS physics and high-voltage devices. He has also been involved in nanoscale Si, Ge devices and novel materials for nonvolatile memories. Kimoto has published over 600 papers in scientific journals and conference proceedings and has given more than 450 presentations at international conferences. He is a Fellow of the Institute of Electrical and Electronics Engineers (IEEE) and the Japan Society of Applied Physics (JSAP), as well as a member of the Materials Research Society (MRS), Institute of Electronics, Information and Communication (IEICE) and Institute of Electrical Engineers (IEE).

Dethard PetersDethard Peters
Processing Comparison of SiC Planar and Trench MOSFETs—The Case for Trenches

Monday, September 18
3:30 pm – 4:15 pm
Thurgood Marshall Ballroom, North Salon

Dethard Peters received his PhD degree in electrical engineering from the Technische Universität Hamburg-Harburg in 1991. He joined Siemens Corporate Technology, later SiCED, and since 2012, Infineon Technologies AG. Peters has vast experience in the R&D of SiC devices and manages SiC MOSFET technology projects.