Plenary, Keynote and Invited Speakers

Plenary Speakers

  • Anup Bhalla, United Silicon Carbon, Inc. 
    Recent Developments Accelerating SiC Adoption
  • Hidekazu Tsuchida, Central Research Institute of Electric Power Industry (CRIEPI) 
    Advancing 4H-SiC Crystal Technology to the Next Stage

Keynote Speakers

  • Tsunenobu Kimoto, Kyoto University
    Epitaxial Material Challenges for High-Voltage SiC Devices
  • Dethard Peters, Infineon Technologies 
    Processing Comparison of SiC Planar and Trench MOSFETs—The Case for Trenches
  • Yuri Khlebnikov, Wolfspeed, A Cree Company 
    Status and Challenges for Large-Diameter SiC Substrates
  • Yoshiyuki Yonezawa, National Institute of Advanced Industrial Science and Technology (AIST) 
    Progress and Challenge in High to Ultra-High Voltage SiC Power Device Technology

Invited Speakers

  • Peder Bergman, Linkoping University 
    Progress in Defect Characterization of WBG Semiconductors
  • Alberto Castellazi, The University of Nottingham 
    SiC MOSFET Device Parameter Spread and Ruggedness of Parallel Multichip Structures
  • Sarit Dhar, Auburn University 
    Status and Prospects for SiC MOS Interface Optimization
  • Kimimori Hamada, Toyota Motor Corporation
    Nitrogen Behavior on 4H-SiC M-Face MOS Interface During NO Oxynitridation, NO Re-Oxynitridation and Dry O2 Re-Oxidation
  • Viktor Ivady, Linköping University
    Identification of Si-Vacancy Related Room Temperature Qubits in 
    4H and 6H-SiC
  • Nando Kaminski, University of Bremen 
    Reliability Challenges for SiC Power Devices in Systems and the Impact on Reliability Testing
  • Isik Kizilyalli, Advanced Research Projects Agency-Energy (AR, Advanced Research Projects Agency-Energy (ARPA-E)
    Power Electronic Devices and Systems Based on Bulk GaN Substrates
  • Walter Klahold, University of Pittsburgh
    High Resolution Optical Spectroscopy of Free Exciton and Electronic Band Structure near the Fundamental Gap in 4H SiC
  • Kazutoshi Kojima, National Institute of Advanced Industrial Science and Technology (AIST)
    Effects of Al Co-Doping for Reducing Stacking Faults in High N doped 4H0SiC Crystal
  • Jean-Marie Lauenstein, NASA Goddard Space Flight Center
    Taking SiC Power Devices to the Final Frontier—Addressing Challenges of the Space Radiation Environment
  • David Levett, Infineon Technologies 
    History, Status and Prospects of Packaging Technology for SiC MOSFETS
  • Hiroshi Osawa, Showa Denko Carbon, Inc. 
    Status and Trends in Epitaxy and Defects
  • Rajan Rengarajan, II-VI Advanced Materials 
    150 mm Substrates and Beyond
  • Fabrizion Roccaforte, The Institute for Microelectronics and Microsystems (CNR-IMM)
    Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology
  • Maximilian Rühl, University of Erlangen-Nuremberg
    Sub-Bandgap Photoluminescence Study on Implantation-Induced Color Centers in
    4H-SiC
  • Jim Speck, University of California, Santa Barbara 
    Development of the β-(AlxGa1-x)2O3/β-Ga2O3 (010) Modulation Doping Field Effect Transistors with Ge as Dopant Grown by Plasma-Assisted Molecular Beam Epitaxy
  • Ljubisa Stevanovic, GE Global Research Center 
    SiC MOSFETs for Multi-MW PV Inverters—Opportunities and Challenges
  • Edward Van Brunt, Wolfspeed, A Cree Company 
    Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices
  • Carl-Mikael Zetterling, KTH Royal Institute of Technology 
    Extreme Environment SiC Integrated Circuits