2025 MRS Fall Meeting & Exhibit

Symposium EL02-Two-Dimensional Ferroelectric and Multiferroic Materials and Heterostructures

Multiferroics approaching the nanoscale limit has the potential to revolutionize modern computational methods. By coupling the spin degrees of freedom to electric field, new schemes can be realized for designing multi-state memory, 3D-stacked high bandwidth memory, and neuromorphic devices. Van der Waals layered 2D materials, where there are no dangling bonds, are a potential solution for realizing these goals. In recent years, new schemes for achieving ferroelectricity in 2D materials have been explored. For example, Intra- and interlayer sliding, displacement of transition metal atoms inside cage-like noncentrosymmetric structures, and electrical control of different stacking orders in moiré heterostructures. These mechanisms allow significant elemental and layer substitutions, enabling mixing and matching of 2D ferroelectric and magnetic materials. With these approaches new nonvolatile multiferroic properties may be possible even down angstrom scale, representing new ways to design multi-state computing devices. This symposium focuses on novel ferroelectric and multiferroic 2D materials and heterostructures and the mechanisms therein that govern their responses to applied electric fields. The symposium will address fundamental principles for polarization and magnetism in 2D materials and their interaction with electric fields (i.e., ferroelectricity and magnetoelectric effects), as well as applications of these principles in memory and logic devices. Contributions on beyond-graphene 2D materials (e.g., transition metal dichalcogenides, metal thiosulphates, etc.) and 2D/3D heterostructures will be considered. Abstracts are solicited for experimental (synthesis, spectroscopy, transport, scanning-probe techniques, and devices) and theoretical (high-throughput design, first-principles- predictions, theory of experiment, and device models) areas involving ferroelectric, magnetic, and multiferroic materials.

Topics will include:

  • New 2D materials for ferroelectric-driven memory
  • Synthesis and characterization of layered ferroelectric or multiferroic materials
  • 2D ferroelectric or multiferroic devices
  • Transport behavior of ferroelectric or multiferroic 2D materials
  • Theory and simulation of multiferroic 2D materials or heterostructures
  • Polar magnetic materials
  • Moiré ferroelectric and multiferroic heterostructures
  • 2D/3D multiferroic heterostructures

Invited Speakers:

  • Kah-Wee Ang (National University of Singapore, Singapore)
  • Ting Cao (University of Washington, USA)
  • Jun Woo Choi (Korea Institute of Science and Technology, Republic of Korea)
  • Riccardo Comin (Massachusetts Institute of Technology, USA)
  • Dinh Loc Duong (Montana State University, USA)
  • Roman Gorbachev (The University of Manchester, United Kingdom)
  • Yimo Han (Rice University, USA)
  • Shengxi Huang (Rice University, USA)
  • Sergei Kalinin (The University of Tennessee, Knoxville, USA)
  • Efthiomios Kaxiras (Harvard University, USA)
  • Jose Lado (Aalto University, Finland)
  • Ping Li (Xi'an Jiaotong University, China)
  • Xi Ling (Boston University, USA)
  • Adina Luican-Mayer (University of Ottawa, Canada)
  • Petro Maksymovych (Oak Ridge National Laboratory, USA)
  • Zetian Mi (University of Michigan, USA)
  • Kosuke Nagashio (The University of Tokyo, Japan)
  • Rahul Rao (Air Force Research Laboratory, USA)
  • Xavier Roy (Columbia University, USA)
  • Jian Shi (Rensselaer Polytechnic Institute, USA)
  • Johnathan Spanier (Drexel University, USA)
  • Haiyan Wang (Purdue University, USA)
  • Ying Wang (University of Wisconsin-Madison, USA)
  • Menghao Wu (Huazhong University of Science and Technology, China)
  • Su-yang Xu (Harvard University, USA)
  • Li Yang (Washington University in St. Louis, USA)
  • Yingchao Yang (University of Missouri-Columbia, USA)
  • Kenji Yasuda (Cornell University, USA)
  • Geliang Yu (Nanjing University, China)
  • Liuyan Zhao (University of Michigan, USA)

Symposium Organizers

Daniel Rhodes
University of Wisconsin-Madison
USA

Qiong Ma
Boston College
USA

Xiaofeng Qian
Texas A&M University
Materials Science and Engineering
USA

Feng Yan
Arizona State University
Materials Science and Engineering
USA

Topics

2D materials electrical properties ferroelectricity magnetic properties nanoscale piezoresponse quantum materials thin film