Please contact the symposium organizers with questions.

Chemical vapor deposition (CVD), and its surface limited and self-terminated version atomic layer deposition (ALD) were originally used for depositing uniform thin films. However, in recent years they have developed to enable patterning through selective area deposition methods. The capabilities of CVD and ALD were further enhanced with a wider range of deposited materials such as metals, organic materials, hybrid materials, complex oxides, and doped oxides; deposition parameters such as plasmas sources and atmospheric operation. Modelling and simulation of reaction mechanisms have further increased the understanding and optimization of these processes, assisted by new in situ characterization tools.

As a result of these developments, a wide range of application has bloomed to include energy storage, sensing, protective coatings for extreme conditions, interface-tailoring in advanced composites and surface tailoring in smart textiles, catalysis, photovoltaics, and more. Notably, the ALD and CVD materials often act as enabling components in these applications. This symposium, focused on the ALD and CVD processes rather than their resultant materials, will bring together ALD and CVD researchers often dispersed amongst different, more material focused symposia, to highlight and discuss recent advancements in the field of ALD and CVD, and the technologies they are enabling.

Topics will include:

• Deposition of 2D and metamaterials
• New ALD/CVD precursors and reaction mechanisms
• Simulation and modelling of reaction mechanisms
• Advanced ALD/CVD characterization techniques
• Deposition of organic and hybrid materials
• Energy activated ALD/CVD
• Area Selective ALD/CVD
• Spatial ALD, atmospheric processing, and high throughput
• Devices and applications enabled by ALD/CVD

Invited Speakers:

• Sumit Agarwal (Colorado School of Mines, USA)
• Sean Barry (Carleton University, Canada)
• Stacey F. Bent (Stanford University, USA)
• Anna Maria Coclite (Graz University of Technology, Austria)
• Adrianna Creatore (Eindhoven University of Technology, Netherlands)
• Simon Elliott (Schrödinger, Inc., USA)
• Steven George (University of Colorado Boulder, USA)
• Karen K. Gleason (Massachusetts Institute of Technology, USA)
• Robert Hoye (University of Cambridge, United Kingdom)
• Sung Gap Im (Korea Advanced Institute of Science and Technology, Republic of Korea)
• Gozde Ince (Sabanci Univeristy, Turkey)
• Maarit Karppinen (Aalto University, Finland)
• Alexander C. Kozen (University of Maryland, College Park, USA)
• Jeorg Lahann (University of Michigan, USA)
• Ken Lau (Drexel University, USA)
• Jessie Mao (Oklahoma State University, USA)
• David Muñoz-Rojas (Université Grenoble Alpes, France)
• Daniel Nessim (Bar-Ilan University, Israel)

Symposium Organizers