2022 MRS Fall Meeting & Exhibit

EQ09.06.07

Magnetization Switching and Reading in Magnetoeletric Spin-Orbit Nanodevices at Room Temperature

When and Where

Nov 30, 2022
10:45am - 11:00am

Sheraton, 2nd Floor, Back Bay D

Presenter

Co-Author(s)

Diogo Vaz1,Chia-ching Lin2,John Plombon2,Won Young Choi1,Inge Groen1,Isabel Arango1,Andrey Chuvilin1,Aymeric Vecchiola3,Karim Bouzehouane3,Stephane Fusil3,Vincent Garcia3,Manuel Bibes3,Dmitri Nikonov2,Hai Li2,Punyashloka Debashis2,Scott Clendenning2,Tanay Gosavi2,Yen-Lin Huang4,Bhagwati Prasad4,Ramamoorthy Ramesh4,Ian Young2,Felix Casanova1

CIC nanoGUNE1,Intel Corporation2,CNRS/Thales3,University of California, Berkeley4

Abstract

Diogo Vaz1,Chia-ching Lin2,John Plombon2,Won Young Choi1,Inge Groen1,Isabel Arango1,Andrey Chuvilin1,Aymeric Vecchiola3,Karim Bouzehouane3,Stephane Fusil3,Vincent Garcia3,Manuel Bibes3,Dmitri Nikonov2,Hai Li2,Punyashloka Debashis2,Scott Clendenning2,Tanay Gosavi2,Yen-Lin Huang4,Bhagwati Prasad4,Ramamoorthy Ramesh4,Ian Young2,Felix Casanova1

CIC nanoGUNE1,Intel Corporation2,CNRS/Thales3,University of California, Berkeley4
In recent years, voltage and frequency scaling of CMOS technology has slowed down, accompanied by increasingly larger power requirements. To assure the continuity of Moore’s Law, new beyond-CMOS logic devices need to be found. For this purpose, one of the leading options is the magneto-electric spin-orbit (MESO) logic device, where a combination of quantum materials and spin-based phenomena allows for energy-efficient logic and favourable device scaling [1, 2].<br/><br/>Here, based on the initial MESO proposal, we show voltage-based magnetization switching and reading at room temperature, in Pt/CoFe nanodevices fabricated on a multiferroic BiFeO3 layer [3, 4]. Switching is performed by application of a voltage pulse to the BiFeO3, which reverses its ferroelectric and antiferromagnetic state. Through interfacial exchange coupling, the CoFe magnetization is also reversed. Spin-to-charge conversion in the Pt/CoFe nanodevice is then used to probe the magnetization direction of the CoFe element. Additionally, we show PFM and MFM experiments where magnetization switching is imaged after each voltage pulsed applied. We discuss future strategies that need to be followed for the implementation of MESO-based logic circuits [4].<br/><br/>[1] S. Manipatruni et al., Nature 565, 35-42, 2019.<br/>[2] H. Liu et al., IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 5, 1-9, 2019.<br/>[3] C. -C. Lin et al., IEEE International Electron Devices Meeting (IEDM), 37.3.1-37.3.4, 2019.<br/>[4] D. C. Vaz et al., IEEE International Electron Devices Meeting (IEDM), 32.4. 1-32.4. 4, 2021.

Symposium Organizers

Ying-Hao Chu, National Tsing Hua University
Catherine Dubourdieu, Helmholtz-Zentrum Berlin / Freie Universität Berlin
Olga Ovchinnikova, Oak Ridge National Laboratory
Bhagwati Prasad, Indian Institute of Science

Symposium Support

Bronze
CRYOGENIC LIMITED

Publishing Alliance

MRS publishes with Springer Nature

Symposium Support