Call for Papers

Please contact the symposium organizers with questions.

Research in ultra-wide-bandgap (UWBG) semiconductor materials and devices continues to progress rapidly. Materials beyond silicon carbide and gallium nitride, such as gallium oxide, diamond, cubic boron nitride, aluminum nitride, and others, are at the frontier of semiconductor materials research and device physics. While such materials hold great promise for applications such as ultraviolet optoelectronic emitters and detectors, more compact and efficient energy converters, higher power high-frequency amplifiers, and quantum information science, many materials and processing challenges must still be addressed before UWBG semiconductors mature and can have significant impact. For example, many of the fundamental properties of these emerging materials are still poorly understood, including the physics of high-energy carrier scattering and transport responsible for electrical breakdown. Practical challenges such as efficient and controllable n- and p-type doping, synthesis of large area, low-defect-density substrates, the formation of reliable, low-resistance electrical contacts, and the integration of dielectric films with high quality interfaces are also areas that need to be further advanced before delivery of mature, viable, and cost competitive UWBG technologies can occur. This symposium will address a comprehensive set of topics related to the materials science, device physics, and processing of ultra-wide-bandgap materials, with a view towards the applications that are driving research in the field. The concept of co-design, whereby research topics such as those described above as well as their potential impact on applications are considered concurrently, is anticipated to be a theme of the symposium. While not the focus of the symposium, topics of current interest in the more traditional wide-bandgap materials will also be considered.

Topics will include:

• Bulk crystals and substrates
• Epitaxial growth
• Theory and first-principles calculations
• Defect science, including doping
• Novel polarization effects and utilization in devices
• UWBG heterostructures
• Device performance and reliability
• Low-dimensional structures
• Carrier recombination dynamics
• Gate and passivation dielectrics
• Thermal properties and thermal engineering
• Advanced materials characterization techniques
• Color centers for quantum technologies
• Ultraviolet emitters and detectors

Invited Speakers (tentative):

• Enrico Bellotti (Boston University, USA)
• Josephine Chang (Northrop Grumman Corporation, USA)
• Srabanti Chowdhury (Stanford University, USA)
• Alan Doolittle (Georgia Institute of Technology, USA)
• Dan Dryden (Air Force Research Laboratory, USA)
• Yasuaki Einaga (Keio University, Japan)
• Jack Flicker (Sandia National Laboratories, USA)
• Eienne Gheeraert (Centre National de la Recherche Scientifique, France)
• Ken Haenen (Hasselt University, Belgium)
• Debdeep Jena (Cornell University, USA)
• Riena Jenno (University of Tokyo, Japan)
• Tom Kazior (Defense Advanced Research Projects Agency, USA)
• Manos Kioupakis (University of Michigan, USA)
• Sriram Krishnamoorthy (University of California, Santa Barbara, USA)
• David Meyer (U.S. Naval Research Laboratory, USA)
• David Moran (University of Glasgow, United Kingdom)
• Sergei Novikov (University of Nottingham, United Kingdom)
• Naoteru Shigekawa (Osaka Metropolitan University, Japan)
• Zlatko Sitar (North Carolina State University, USA)
• Carol Trager-Cowan (University of Strathclyde, United Kingdom)
• Grace Xing (Cornell University, USA)
• Enrico Zanoni (Università degli Studi di Padova, Italy)

Symposium Organizers