MRS Meetings and Events

 

EQ11.03.05 2022 MRS Spring Meeting

La2NiO4+δ—A New Mixed Conducting Oxide for Analogue Memristive Devices

When and Where

May 10, 2022
10:15am - 10:45am

Hawai'i Convention Center, Level 3, 318A

Presenter

Co-Author(s)

Mónica Burriel1,Khanh Khuu1,2,Klaasjan Maas1,Gauthier Lefevre2,Carlos Moncasi1,Fabrice Wilhelm3,Serge Blonkowski4,Eric Jalaguier4,Ahmad Bsiesy2,Carmen Jiménez1

Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP1,Univ. Grenoble Alpes, CNRS, CEA/LETI Minatec, LTM2,European Synchrotron Radiation Facility (ESRF)3,Univ. Grenoble Alpes, CEA, LETI4

Abstract

Mónica Burriel1,Khanh Khuu1,2,Klaasjan Maas1,Gauthier Lefevre2,Carlos Moncasi1,Fabrice Wilhelm3,Serge Blonkowski4,Eric Jalaguier4,Ahmad Bsiesy2,Carmen Jiménez1

Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP1,Univ. Grenoble Alpes, CNRS, CEA/LETI Minatec, LTM2,European Synchrotron Radiation Facility (ESRF)3,Univ. Grenoble Alpes, CEA, LETI4
Resistive switching (RS) devices have attracted increasing attention for their application for non-volatile memories and neuromorphic computing systems. In my talk, I will focus on the design of novel memristive heterostructures using a perovskite-related oxide with high oxygen mobility and p-type semiconducting electronic transport, namely La<sub>2</sub>NiO<sub>4+δ</sub> (L2NO4). Dense L2NO4 thin films were grown using pulsed-injection metal-organic chemical vapor deposition (PI-MOCVD) under optimized conditions. While our first studies were dedicated to epitaxial films on single-crystal substrates, we then moved towards industrial-relevant substrates and thus deposited polycrystalline L2NO4 films on Si-based CMOS-compatible wafers. The epitaxial films allowed to construct planar memristive devices, while the polycrystalline ones enabled for both planar and vertical configurations. The electrical response of these devices could be tuned both by changing the electrode materials and the amount of point defects (oxygen interstitials) of the sandwiched film. The chemical, structural, microstructural of the films will be presented, showing the high crystal quality, together with the change in Ni oxidation state and the concomitant change in resistivity after annealing. Furthermore, by several electrical characterization measurements, the key role played by the oxygen interstitials on the initial resistance state, the initialization step, and the memristive characteristics of the devices will be presented and discussed.<sup>[1,2]</sup> An analog bipolar counter-eightwise RS behavior with multiple resistance states has been proven both for the planar and vertical devices, using continuous sweeps and voltage pulses. Selected devices were further analyzed by X-ray absorption spectroscopy (XAS) using synchrotron radiation. Changes in the Ni K-edge were measured for different annealings, in different regions of the device and under <i>operando</i> conditions, allowing for a better understanding of the RS mechanisms taking place in the device. Furthermore, gradual changes in conductance after the application of repetitive DC sweeps, which can be regarded as the evolution of the synaptic weight between neurons, were obtained for these novel L2NO4-based devices. These promising results open the door to the use of L2NO4-based memristors as artificial synapses for neuromorphic computing.<br/>[1] K. Maas, E. Villepreux, D. Cooper, C. Jiménez, H. Roussel, L. Rapenne, X. Mescot, Q. Rafhay, M. Boudard, M. Burriel, <i>J. Mater. Chem. C</i> <b>2020</b>, <i>8</i>, 464.<br/>[2] K. Maas, E. Villepreux, D. Cooper, E. Salas Colera, J. Rubio Zuazo, G. R. Castro, O. Renault, C. Jimenez, H. Roussel, X. Mescot, Q. Rafhay, M. Boudard, M. Burriel, <i>Adv. Funct. Mater.</i> <b>2020</b>, <i>30</i>, 1909942.

Keywords

metalorganic deposition

Symposium Organizers

Yoeri van de Burgt, Technische Universiteit Eindhoven
Yiyang Li, University of Michigan
Francesca Santoro, Forschungszentrum Jülich/RWTH Aachen University
Ilia Valov, Research Center Juelich

Symposium Support

Bronze
Nextron Corporation

Publishing Alliance

MRS publishes with Springer Nature