MRS Meetings and Events


EQ06.03.02 2022 MRS Spring Meeting

VTH Shift in n-MoS2 and p-MoTe2 FET Induced by Surface Charge Transfer from Organic Thin Film

When and Where

May 9, 2022
11:00am - 11:15am

Hawai'i Convention Center, Level 3, 314



Yongjae Cho1

Yonsei University1


Yongjae Cho1

Yonsei University1
HAT-CN organic small molecules is used to shift threshold voltages of both n-MoS<sub>2</sub> field-effect transistor (FET) and p-MoTe<sub>2</sub> FET toward 0 V. It is attributed to the charge transfer between HAT-CN organic molecules layer and TMD channel. It is remarkable result because TMD based FETs have unwanted large threshold voltage. To demonstrate the applicable advantage of such effect, a complementary metal oxide semiconductor (CMOS) is built, and HAT-CN is deposited on the channels. Because V<sub>TH</sub> of both n-FET and p-FET in the CMOS are shifted towards 0 V, the performance of CMOS is greatly improved in aspect of voltage gain and power consumption

Symposium Organizers

Santanu Bag, Air Force Research Laboratory
Silvia Armini, IMEC
Mandakini Kanungo, Corning Incorporated
Hong Zhao, Virginia Commonwealth University

Symposium Support

Corning Inc


Publishing Alliance

MRS publishes with Springer Nature