MRS Meetings and Events


EL05.04.09 2024 MRS Spring Meeting

Van der Waals Interface Engineering for Enhancemen of Semiconductor Device Performance

When and Where

Apr 23, 2024
5:00pm - 7:00pm

Flex Hall C, Level 2, Summit



Su-yeon Cho1,Do Hyeon Lee1,Jun Hong Park1

Gyeongsang National University1


Su-yeon Cho1,Do Hyeon Lee1,Jun Hong Park1

Gyeongsang National University1
Since the performance of semiconductor devices is highly dependent on charge injection between the metal electrode and the semiconductor channel, it is important to reduce defect density through interfacial engineering at the metal-semiconductor interface. Typically, as metal is directly deposited on the semiconductor surface to form the contact electrode, metal atoms can diffuse into the semiconductor lattice and degrade the charge injection performance. In this study, we propose a method to insert a WSe<sub>2 </sub>layer to reduce the defect density at the metal/semiconductor interface. The WSe<sub>2</sub> layer inserted at the metal/semiconductor interface acts as a diffusion barrier to prevent the diffusion of metal atoms into the semiconductor lattice, thereby suppressing structural defects. The metal/WSe<sub>2</sub>/Si diode is fabricated by transferring a WSe<sub>2</sub> layer thermally grown on a SiO<sub>2</sub> substrate to a p-type Si substrate by a wet transfer method and then depositing metal electrodes (Ni, Ag, Ti, Cr/Au) onto the WSe<sub>2</sub>/Si substrate using an E-Beam evaporator. The C-V (Capacitance-Voltage) characteristics of the diodes confirm that the insertion of the WSe<sub>2</sub> layer induces a low interfacial defect density (D<sub>it</sub>). Furthermore, the I-V (Current-Voltage) characterization of the diodes shows that the WSe<sub>2</sub> layer not only provides a diffusion barrier but also reduces the leakage current and improves the stability, thereby improving the overall diode performance. In conclusion, the interfacial control method with WSe<sub>2</sub> layer insertion proposed in this work provides a strategy to overcome the challenges of 2D material-based Si semiconductor technology aimed at improving performance and reliability.


2D materials

Symposium Organizers

Silvija Gradecak, National University of Singapore
Lain-Jong Li, The University of Hong Kong
Iuliana Radu, TSMC Taiwan
John Sudijono, Applied Materials, Inc.

Symposium Support

Applied Materials

Session Chairs

Lain-Jong Li
John Sudijono

In this Session

Chemical Vapor Deposition of One-Dimensional Van der Waals Material Nb2Se9 assisted by Liquid Precursor

Room-Temperature Direct Growth of Transition Metal Dichalcogenide Films via Remote Plasma-Assisted Chemical Vapor Deposition

Au Nanoparticle Floating-Gate Memristor Array for Low-Power Neuromorphic System

Multi-Neuron Connection Using Multi-Terminal Floating-Gate Memristor for Unsupervised Learning

Synthesis of Te and Sb Doped Black Phosphorus Single Crystals, Oxidation-Resistance and Room-Temperature Gas Sensing Applications

Structural and Physical Properties of Two Distinct Two-Dimensional Lead Halides with Intercalated Cu(II): A Comparative Study

Van der Waals Interface Engineering for Enhancemen of Semiconductor Device Performance

Monolayer MoS2 with Controllable and Localized Micro-Scale Domains of Strain enabled by Spatially Varying Nanotopography

Semiempirical Pseudopotential Method for Low-Dimensional Materials

Berry Curvature Dipole Induced Giant Mid-Infrared Second-Harmonic Generation in 2D Weyl Semiconductor

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