MRS Meetings and Events


SF03.03.03 2024 MRS Spring Meeting

Broad-Range Modulation of Guest-Species Interactions in MoS2 Transistors for Electrochemical Phase Transitions

When and Where

Apr 23, 2024
5:00pm - 7:00pm

Flex Hall C, Level 2, Summit



Jaeeun Kwon1,Hanbin Cho1

Ulsan National Institution of Science and Technology1


Jaeeun Kwon1,Hanbin Cho1

Ulsan National Institution of Science and Technology1
In the realm of two-dimensional (2D) transition metal dichalcogenides (TMDs), the utilization of ionic gating has emerged as a powerful means, advancing electrostatic and electrochemical manipulations in a wide range of electronic properties. In general, the conventional ionic gating approach is, however, performed within the conservative low-voltage regime, which cannot take advantage of its full range of gating power as well as electrochemical interactions. Herein, we present an all-inclusive ionic gating technique covering from electric-double-layer gating (low-voltage stage) to insulator-to-metal transition (high-voltage stage). In the latter, the structural/electronic phase transformation of MoS<sub>2</sub> is triggered by intercalation of guest ions, 1-Ethyl-3-methylimidazolium ([EMIM]+), which is one of the most conventional cation used in ionic gating devices and the greater details in its characteristics are studied as a versatile and fast-switching device. In such device operated under high-bias condition, it is critical to prevent undesirable chemical reactions, and so we introduce a very thin high-k dielectric passivation layer deposited through atomic layer deposition, strategically protecting the electrodes and also reducing leakage current (so, I<sub>on/off</sub> &gt; 10<sup>6</sup> ) while operating in liquid-based electrolytes at room temperature. In addition, to effectively accumulate the charge in the channel and control the voltage range in which phase transiton can occur, a dual gating method was introduced just adding simple process fabricating bottom gate using high-k dielectric and a way to effectively operate the device was explored. This work underscores the potential for phase-change-based devices and hybrid gating schemes as promising avenues for advancing the field of 2D materials and nanoelectronics, offering unprecedented control and functionality in future electronic systems.


2D materials | intercalated

Symposium Organizers

Iwnetim Abate, Stanford University
Judy Cha, Cornell University
Yiyang Li, University of Michigan
Jennifer Rupp, TU Munich

Symposium Support

Journal of Materials Chemistry A

Publishing Alliance

MRS publishes with Springer Nature