MRS Meetings and Events


EL05.04.18 2024 MRS Spring Meeting

Cyclic Wear Reliability of 2D Materials

When and Where

Apr 23, 2024
5:00pm - 7:00pm

Flex Hall C, Level 2, Summit



Nima Barri1,Akshat Rastogi1,Md Akibul Islam1,Pedro Demingos1,Momoko Onodera2,Boran Kumral1,Tomoki Machida2,Chandra Veer Singh1,Tobin Filleter1

University of Toronto1,The University of Tokyo2


Nima Barri1,Akshat Rastogi1,Md Akibul Islam1,Pedro Demingos1,Momoko Onodera2,Boran Kumral1,Tomoki Machida2,Chandra Veer Singh1,Tobin Filleter1

University of Toronto1,The University of Tokyo2
Wear, a crucial factor that influences the longevity and dependability of a mechanical system, can manifest in virtually any machine featuring moving components. Grasping this phenomenon at the nanoscale level holds significant importance for applications like nanolithography and nanomanufacturing. Due to the intricate nature of wear at the nanoscale, the response of two-dimensional materials to intense cyclic wear and the underlying mechanisms of surface damage remains largely unexplored. In this study, we used atomic force microscope and molecular dynamic simulations to examine the cyclic wear reliability of single-layer graphene, MoS<sub>2</sub>, and WSe<sub>2</sub>. The experimental test involved using a sharp diamond tip to scratch a single line in a reciprocating manner. Results showed that graphene displayed exceptional lubricity, lasting over 3000 cycles at 85% of the applied critical normal load, the minimum load at which the material fails under a single cycle, before failure. MoS<sub>2</sub> and WSe<sub>2</sub>, on the other hand, failed after 500 cycles on average. Additionally, the mechanisms of failure are vastly different. Graphene fails catastrophically due to stress concentration induced by local delamination. On the contrary, MoS<sub>2</sub> and WSe<sub>2</sub> experience intermittent failure with the damage initiating at the wear track's edge and propagates through the entire contact. MD simulation also shed light on the fundamental difference between MoS<sub>2</sub> and WSe<sub>2</sub> in terms of cyclic wear reliability. We concluded that the position of the vacancy defects is determinant of wear reliability of TMDs. Based on the comparison made between chalcogen and metal atom vacancies, we found that a metal vacancy contributes more to stress concentration on the adjacent atoms than a chalcogen vacancy which leads to inferior wear life and premature failure of WSe<sub>2</sub>. The developed experimental and simulation framework and failure behaviour could be extended to other 2D materials. This research not only has implications for the MEMs and NEMs industry, but it also has the potential to optimize the use of 2D materials as lubricant additives on a macroscopic level.



Symposium Organizers

Silvija Gradecak, National University of Singapore
Lain-Jong Li, The University of Hong Kong
Iuliana Radu, TSMC Taiwan
John Sudijono, Applied Materials, Inc.

Symposium Support

Applied Materials

Session Chairs

Lain-Jong Li
John Sudijono

In this Session

Chemical Vapor Deposition of One-Dimensional Van der Waals Material Nb2Se9 assisted by Liquid Precursor

Room-Temperature Direct Growth of Transition Metal Dichalcogenide Films via Remote Plasma-Assisted Chemical Vapor Deposition

Au Nanoparticle Floating-Gate Memristor Array for Low-Power Neuromorphic System

Multi-Neuron Connection Using Multi-Terminal Floating-Gate Memristor for Unsupervised Learning

Synthesis of Te and Sb Doped Black Phosphorus Single Crystals, Oxidation-Resistance and Room-Temperature Gas Sensing Applications

Structural and Physical Properties of Two Distinct Two-Dimensional Lead Halides with Intercalated Cu(II): A Comparative Study

Van der Waals Interface Engineering for Enhancemen of Semiconductor Device Performance

Monolayer MoS2 with Controllable and Localized Micro-Scale Domains of Strain enabled by Spatially Varying Nanotopography

Semiempirical Pseudopotential Method for Low-Dimensional Materials

Berry Curvature Dipole Induced Giant Mid-Infrared Second-Harmonic Generation in 2D Weyl Semiconductor

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