MRS Meetings and Events


EL05.04.19 2024 MRS Spring Meeting

Tunable Semiconductivity in Nitrogen-Doped Graphene Nanosheets for High Surface-Area Optoelectronics

When and Where

Apr 23, 2024
5:00pm - 7:00pm

Flex Hall C, Level 2, Summit



Daniel Ranke1,Yingqiao Wang1,Tzahi Cohen-Karni1

Carnegie Mellon University1


Daniel Ranke1,Yingqiao Wang1,Tzahi Cohen-Karni1

Carnegie Mellon University1
Semiconducting graphene has been identified for high potential electronic and optical applications since its discovery. Previously, substitutional atomic doping of graphene, particularly nitrogen, has shown to induce semiconducting behavior. However, variability in final dopant defect states, particularly from bottom-up synthesis, results in limited control over band structure and has thus formed a firm ceiling on the application of such structures. Here we report a plasma-enhanced chemical vapor deposition approach for the synthesis of switchable p and n-type nitrogen doped vertically oriented graphene nanosheets and applications towards enhanced carrier extraction in optoelectronics. Tuning between in-situ and ex-situ nitrogen doping has shown fine control over pyridinic/graphitic nitrogen dopant ratio, in turn shifting band structures towards more electron or hole-dominated carrier transport. In conjunction with the vertical orientation and density of nanosheets, these nanostructures allowed for the development of optically active p-i-n and n-i-p heterostructures with charge storage capacity and active surface area many times greater than what is possible with traditional planar architectures. With such structures, we show a route towards developing stable, high-surface area, efficient carrier extractors for optoelectronics. Technologies that are critically limited by active surface area, such as photovoltaic electrochemical cells and optical bioelectronic stimulators, show enhanced potential for co-application with these semiconducting graphene nanostructures and pave a clear road forward toward future hybrid-nanomaterial development.


plasma-enhanced CVD (PECVD) (deposition)

Symposium Organizers

Silvija Gradecak, National University of Singapore
Lain-Jong Li, The University of Hong Kong
Iuliana Radu, TSMC Taiwan
John Sudijono, Applied Materials, Inc.

Symposium Support

Applied Materials

Session Chairs

Lain-Jong Li
John Sudijono

In this Session

Chemical Vapor Deposition of One-Dimensional Van der Waals Material Nb2Se9 assisted by Liquid Precursor

Room-Temperature Direct Growth of Transition Metal Dichalcogenide Films via Remote Plasma-Assisted Chemical Vapor Deposition

Au Nanoparticle Floating-Gate Memristor Array for Low-Power Neuromorphic System

Multi-Neuron Connection Using Multi-Terminal Floating-Gate Memristor for Unsupervised Learning

Synthesis of Te and Sb Doped Black Phosphorus Single Crystals, Oxidation-Resistance and Room-Temperature Gas Sensing Applications

Structural and Physical Properties of Two Distinct Two-Dimensional Lead Halides with Intercalated Cu(II): A Comparative Study

Van der Waals Interface Engineering for Enhancemen of Semiconductor Device Performance

Monolayer MoS2 with Controllable and Localized Micro-Scale Domains of Strain enabled by Spatially Varying Nanotopography

Semiempirical Pseudopotential Method for Low-Dimensional Materials

Berry Curvature Dipole Induced Giant Mid-Infrared Second-Harmonic Generation in 2D Weyl Semiconductor

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Publishing Alliance

MRS publishes with Springer Nature