MRS Meetings and Events

 

EL05.04.02 2024 MRS Spring Meeting

Room-Temperature Direct Growth of Transition Metal Dichalcogenide Films via Remote Plasma-Assisted Chemical Vapor Deposition

When and Where

Apr 23, 2024
5:00pm - 7:00pm

Flex Hall C, Level 2, Summit

Presenter

Co-Author(s)

Jina Lee1,Seok Joon Yun2,ki kang Kim1

Sungkyunkwan University1,University of Ulsan2

Abstract

Jina Lee1,Seok Joon Yun2,ki kang Kim1

Sungkyunkwan University1,University of Ulsan2
Transition metal dichalcogenides (TMDs) have gained significant attention in recent years for their unique electronic and optical properties, making them promising candidates for various applications in electronic and optoelectronic devices. This study presents a novel approach for the room-temperature growth of TMDs materials utilizing a plasma-assisted chemical vapor deposition (plasma-assisted CVD) method. The conventional methods for TMDs synthesis often require high temperatures, limiting their compatibility with certain substrates and device integration processes. The proposed plasma-assisted CVD method aims to overcome these challenges by enabling the growth of high-quality TMDs films at room temperature.<br/>The plasma-assisted approach leverages the advantages of reactive species generated in the plasma, promoting enhanced precursor reactivity and efficient material deposition at lower temperatures. The study investigates the influence of key process parameters, such as precursor gas composition, plasma power, and substrate conditions, on the growth kinetics, crystal quality, and morphology of the TMDs films. Characterization techniques, including scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectroscopy, are employed to analyze the structural and morphological properties of the synthesized TMDs materials.<br/>The findings highlight the feasibility and efficacy of the room-temperature growth of TMDs using the proposed plasma-assisted CVD method, paving the way for the development of flexible and scalable fabrication processes for TMDs-based devices. The ability to grow TMDs films at lower temperatures expands their compatibility with a broader range of substrates, offering new opportunities for integration into advanced electronic and optoelectronic applications. This research contributes to the ongoing efforts to advance the synthesis techniques of TMDs materials and unlock their full potential for next-generation electronic technologies.

Keywords

2D materials | chemical vapor deposition (CVD) (chemical reaction) | plasma-enhanced CVD (PECVD) (deposition)

Symposium Organizers

Silvija Gradecak, National University of Singapore
Lain-Jong Li, The University of Hong Kong
Iuliana Radu, TSMC Taiwan
John Sudijono, Applied Materials, Inc.

Symposium Support

Gold
Applied Materials

Session Chairs

Lain-Jong Li
John Sudijono

In this Session

EL05.04.01
Chemical Vapor Deposition of One-Dimensional Van der Waals Material Nb2Se9 assisted by Liquid Precursor

EL05.04.02
Room-Temperature Direct Growth of Transition Metal Dichalcogenide Films via Remote Plasma-Assisted Chemical Vapor Deposition

EL05.04.03
Au Nanoparticle Floating-Gate Memristor Array for Low-Power Neuromorphic System

EL05.04.04
Multi-Neuron Connection Using Multi-Terminal Floating-Gate Memristor for Unsupervised Learning

EL05.04.06
Synthesis of Te and Sb Doped Black Phosphorus Single Crystals, Oxidation-Resistance and Room-Temperature Gas Sensing Applications

EL05.04.08
Structural and Physical Properties of Two Distinct Two-Dimensional Lead Halides with Intercalated Cu(II): A Comparative Study

EL05.04.09
Van der Waals Interface Engineering for Enhancemen of Semiconductor Device Performance

EL05.04.10
Monolayer MoS2 with Controllable and Localized Micro-Scale Domains of Strain enabled by Spatially Varying Nanotopography

EL05.04.11
Semiempirical Pseudopotential Method for Low-Dimensional Materials

EL05.04.12
Berry Curvature Dipole Induced Giant Mid-Infrared Second-Harmonic Generation in 2D Weyl Semiconductor

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