2021 MRS Spring Meeting

Meeting content will be available through May 31
at https://mrs2021.cd.pathable.com/.


All times listed are Eastern Daylight Time.

Symposium EL04 : Ultrawide Bandgap Materials, Devices and Systems

2021-04-18   Show All Abstracts

Symposium Organizers

Hongping Zhao, The Ohio State University
Masataka Higashiwaki, National Institute of Information & Comm Tech
Robert Kaplar, Sandia National Laboratories
Julien Pernot, University of Grenoble

Symposium Support

Silver
Taiyo Nippon Sanso
EL04.01: AlGaN Materials and Devices
Session Chairs
Siddharth Rajan
Hongping Zhao
Sunday PM, April 18, 2021
EL04

10:30 AM - *EL04.01.01
AlN Nanowire pn Heterojunctions—A New Paradigm Towards UV-C LEDs

Bruno Daudin1,2,Rémy Vermeersch1,2,Alexandra-Madalina Siladie1,2,Gwénolé Jacopin3,Ana Cros4,Nuria Garro4,Eric Robin1,5,D. Calliste6,Pascal Pochet6,Fabrice Donatini3,Julien Pernot3

Université Grenoble Alpes1,CEA, IRIG-PHELIQS "Nanophysics and Semiconductors" Group2,Institut Néel, Université Grenoble Alpes, CNRS3,Universidad de Valencia4,CEA, INAC-MEM, LEMMA5,CEA, INAC-MEM, L-SIM6

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10:55 AM - EL04.01.02
Growth of (Al,Ga)N/GaN Heterostructures at Temperatures Below 600 °C by Metalorganic Vapor Phase Epitaxy

Caroline Reilly1,Nirupam Hatui1,Shuji Nakamura1,Steven DenBaars1,Stacia Keller1

University of California, Santa Barbara1

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11:10 AM - EL04.01.03
Influence of Chemical Potentials on Strain Development in Si-Doped Al0.7Ga0.3N

Yan Guan1,Shun Washiyam1,Dolar Khachariya1,Pegah Bagheri1,Ji Hyun Kim1,Pramod Reddy2,Ramon Collazo1,Zlatko Sitar1

North Carolina State University1,Adroit Materials Inc.2

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11:25 AM - EL04.01.04
Late News: Assessment of N-Type and P-Type Doping in (Al,Ga)N Heterostructures by Scanning Probe Microscopy Techniques

Albert Minj1,Ming Zhao1,Benoit Bakeroot1,2,Lennaert Wouters1,Kristof Paredis1,Thomas Hantschel1,Stefaan Decoutere1

imec1,Centre for Microsystems Technology (CMST), imec and Ghent University2

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11:40 AM - EL04.01.05
Late News: Hanbury Brown and Twiss Correlations in a SEM—Imaging Carrier Lifetime at the Nanoscale in Ultra Wide Band Gap Materials

Sylvain Finot1,Vincent Grenier2,Vitaly Zubialevich3,Catherine Bougerol1,Pietro Pampili3,Joël Eymery4,Peter Parbrook3,Christophe Durand2,Gwénolé Jacopin1

University Grenoble Alpes, CNRS, Grenoble INP, Institut Néel1,University Grenoble Alpes, CEA, IRIG, PHELIQS, NPSC2,Tyndall National Institute, University College Cork3,University Grenoble Alpes, CEA, IRIG, MEM, NRS4

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11:55 AM - *EL04.01.06
UV-VIS Photodetectors Using AlGaN High Electron Mobility Transistors with GaN Nano-Dot Floating Gates

Andrew Armstrong1,Alexandra Brianna Klein1,Andrew Allerman1,Albert Baca1,Mary Crawford1,Jacob Podkaminer2,Carlos Perez1,Michael Siegal1,Erica Douglas1,Vincent Abate1,Francois Leonard1

Sandia National Laboratories1,Current Address: 3M Corporate Research Laboratory2

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EL04.02: Nitrides Materials and Devices
Session Chairs
Bruno Daudin
Robert Kaplar
Sunday PM, April 18, 2021
EL04

1:00 PM - EL04.02.01
Late News: A Comprehensive Study of MOVPE Growth on 200 mm GaN-on-SOI for Monolithic Integrated GaN ICs

Ming Zhao1,Karen Geens1,Xiangdong Li1,Nooshin Amirifar1,Stefaan Decoutere1

imec1

Show Abstract

1:15 PM - EL04.02.02
Characterization of III-Nitride Epitaxial Layers by Scanning Spreading Resistance Microscopy

Sizhen Wang1,Jinho Kang1,Bingjun Li1,Jung Han1

Yale University1

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1:30 PM - EL04.02.03
Structural and Piezoelectric Properties of ScxAl1-xN-GaN Heterostructures Grown by
Molecular Beam Epitaxy

Joseph Casamento1,Celesta Chang1,Yu-Tsun Shao1,John Wright1,David Muller1,Huili Xing1,Debdeep Jena1

Cornell University1

Show Abstract

1:45 PM - EL04.02.04
Dielectric Properties, Electronic Transitions and Infrared Active Optical Phonon Modes of Molecular Beam Epitaxy ScxAl1-xN Determined by Spectroscopic Ellipsometry

Alyssa Mock1,Alan Jacobs2,Eric Jin1,Matthew Hardy2,Marko Tadjer2

NRC Research Associateship Programs1,U.S. Naval Research Laboratory2

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2:00 PM - EL04.02.05
Growth of High Quality MOCVD Aluminum Nitride Using N2 as Carrier Gas

Samiul Hasan1,Abdullah Mamun1,Kamal Hussain1,Dhruvinkumar Patel1,Mikhail Gaevski1,Iftikhar Ahmad1,Asif Khan1

University of South Carolina1

Show Abstract

2:15 PM - EL04.02.08
Late News: Polarization-Induced 2D Hole Gases in Undoped InGaN/AlN Heterostructures Grown on Single-Crystal AlN Substrates

Jimy Encomendero Risco1,Zexuan Zhang1,Reet Chaudhuri1,Masato Toita2,Debdeep Jena1,Huili Xing1

Cornell University1,Asahi Kasei Corporation2

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EL04.03: Other UWBG Semiconductors
Session Chairs
Robert Kaplar
Hongping Zhao
Sunday PM, April 18, 2021
EL04

4:00 PM - *EL04.03.01
Prospects of LiGaO2 and NaGaO2 as Ultrawide Band Gap Semiconductors

Walter Lambrecht1,Adisak Boonchun2,Klichchukon Dabsamut2,Dmitry Skachkov3,Santosh Radha1,Amol Ratnaparkhe1

Case Western Reserve University1,Kasetsart University2,University of Florida3

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4:25 PM - EL04.03.02
Electron and Hole Mobility of Rutile GeO2 from First Principles—An Ultrawide-Band-Gap Semiconductor for Power Electronics

Kyle Bushick1,Kelsey Mengle1,Sieun Chae1,Emmanouil Kioupakis1

University of Michigan1

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4:40 PM - EL04.03.03
Extremely Sharp Free Exciton Emission in Heteroepitaxial Cuprous Iodide Thin Films Grown by MBE

Masao Nakamura1,Sotato Inagaki2,Yoshihiro Okamura2,Makiko Ogino2,Youtarou Takahashi2,1,Licong Peng1,Xiuzhen Yu1,Yoshinori Tokura1,2,Masashi Kawasaki2,1

RIKEN1,The University of Tokyo2

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4:55 PM - EL04.03.04
Rutile GeO2—An Ultra-Wide-Band-Gap Semiconductor for Power Electronics

Sieun Chae1,Kelsey Mengle1,Kyle Bushick1,Hanjong Paik2,Nguyen Vu1,John Heron1,Emmanouil Kioupakis1

University of Michigan1,Cornell University2

Show Abstract

5:10 PM - EL04.03.05
Late News: Thermal Imaging of Ultrawide Bandgap Devices Using MoS2 Thermoreflectance Enhancement Coatings

Riley Hanus1,Samuel Graham1,Asif Khan2

Georgia Institute of Technology1,University of South Carolina2

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5:25 PM - *EL04.03.06
Deep UV Optical Properties of High-Mg-Content Rocksalt-Structured MgZnO

Takeyoshi Onuma1,Kanta Kudo1,Kyohei Ishii2,Mizuki Ono1,Yuichi Ota3,Kentaro Kaneko2,Tomohiro Yamaguchi1,Shizuo Fujita2,Tohru Honda1

Kogakuin University1,Kyoto University2,Tokyo Metropolitan Industrial Technology Research Institute3

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EL04.04: Keynote Session: UWBG
Session Chairs
Masataka Higashiwaki
Hongping Zhao
Sunday PM, April 18, 2021
EL04

6:30 PM - *EL04.04.01
Materials and Device Engineering for AlGaN and β-Ga2O3 UWBG Electronic Devices

Siddharth Rajan1,Nidhin Kalarickal1,Towhidur Razzak1,Hao Xue1,Zhanbo Xia1,Chandan Joishi1,Hongping Zhao1,Asif Khan2,Wu Lu1

The Ohio State University1,University of South Carolina2

Show Abstract

6:54 PM - *EL04.04.02
Current Status of Deep Level Defects in β-Ga2O3

Steven Ringel1,Hemant Jagannath Ghadi1,Joseph McGlone1,Rachel Adams1,Aaron Arehart1,Zixuan Feng1,A F M Anhar Uddin Bhuiyan1,Yuxuan Zhang1,Hongping Zhao1,Zhanbo Xia1,Nidhin Kalarickal1,Siddharth Rajan1,Alexander Senckowski2,Man Hoi Wong2

The Ohio State University1,University of Massachusetts Amherst2

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7:18 PM - *EL04.04.03
CVD Diamond P-I-N Structures for High Temperature Electronics, Radiation Detection and Electron Emission

Robert Nemanich1,Franz Koeck1,Mohamadali Malakoutian2,Harshad Surdi1,Jason Holmes1,Manpuneet Benipal3,Ricardo Alarcon1,Srabanti Chowdhury4,Stephen Goodnick1

Arizona State University1,University of California, Davis2,Advent Diamond Inc.3,Stanford University4

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7:42 PM - *EL04.04.04
Diamond Electronics for Quantum Sensing

Mutsuko Hatano1

Tokyo Institute of Technology1

Show Abstract

8:06 PM - *EL04.04.05
UV-C Laser Diode with Distributed Polarization Doped P-Cladding Layer

Maki Kushimoto1,Ziyi Zhang1,2,Tadayoshi Sakai1,Naoharu Sugiyama1,Leo Showalter3,Yoshio Honda1,Chiaki Sasaoka1,Hiroshi Amano1

Nagoya University1,Asahi Kasei Corporation2,Crystal IS, Inc.3

Show Abstract

2021-04-19   Show All Abstracts

Symposium Organizers

Hongping Zhao, The Ohio State University
Masataka Higashiwaki, National Institute of Information & Comm Tech
Robert Kaplar, Sandia National Laboratories
Julien Pernot, University of Grenoble

Symposium Support

Silver
Taiyo Nippon Sanso
EL04.05: GaN Power Electronics I
Session Chairs
Robert Kaplar
Hongping Zhao
Monday AM, April 19, 2021
EL04

8:00 AM - *EL04.05.01
Wide Bandgap Semiconductor Based Power Electronic Devices for Energy Efficiency

Isik Kizilyalli1,Eric Carlson2

U.S. Dept. of Energy1,Booz Allen Hamilton2

Show Abstract

8:25 AM - EL04.05.02
Materials and Technology Issues of Vertical GaN Power FinFETs

Ahmad Zubair1,Joshua Perozek1,John Niroula1,Tomas Palacios1

Massachusetts Institute of Technology1

Show Abstract

8:40 AM - EL04.05.03
Laser-Assisted MOCVD GaN Epitaxy for Vertical Power Device Applications

Yuxuan Zhang1,Zhaoying Chen1,Zixuan Feng1,Hongping Zhao1

The Ohio State University1

Show Abstract

8:55 AM - EL04.05.04
GaN P-N Power Diodes with > 1.5 kV Breakdown Voltage

Vishank Talesara1,Zhaoying Chen1,Yuxuan Zhang1,Hongping Zhao1,Wu Lu1

The Ohio State University1

Show Abstract

9:10 AM - EL04.05
Discussion Time


Show Abstract

9:25 AM - EL04.05.06
Low-Defect Etched-and-Regrown PN Diodes by In Situ Tertiarybutylchloride (TBCl) Etching

Bingjun Li1,Sizhen Wang1,Jung Han1

Yale University1

Show Abstract

9:40 AM - EL04.05.07
Scanning Capacitance Microscopy of GaN p-n Junction Through Planar and Selective Area Doping

Sizhen Wang1,Bingjun Li1,Jung Han1

Yale University1

Show Abstract

9:55 AM - EL04.05.08
Late News: Surface Photovoltage Study of the Bulk Photovoltaic Effect in Carbon-Doped Gallium Nitride

Igal Levine1,Ivan Gamov2,Marin Rusu1,Klaus Irmscher2,Christoph Merschjann1,Eberhard Richter3,Markus Weyers3,Thomas Dittrich1

Helmholtz-Zentrum Berlin1,Leibniz-Institut für Kristallzüchtung2,Ferdinand-Braun-Institut GmbH, Leibniz-Institut für Höchstfrequenztechnik3

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EL04.06: GaN Power Electronics II
Session Chairs
Srabanti Chowdhury
Robert Kaplar
Monday PM, April 19, 2021
EL04

10:30 AM - *EL04.06.01
Design and Fabrication of Edge-Termination for Achieving Reliable GaN P-N Diodes for High Voltage Applications

Srabanti Chowdhury1,Andrew Allerman2,Robert Kaplar2,Andrew Armstrong2,Jeramy Dickerson2,Alan Jacobs3,Karl Hobart3

Stanford University1,Sandia National Laboratories2,U.S. Naval Research Laboratory3

Show Abstract

10:55 AM - EL04.06.02
Variations in GaN Substrates and the Structural Evolution of Defects in Homoepitaxial GaN Layers

Yekan Wang1,Michael Liao1,Kenny Huynh1,Andrew Allerman2,Mark Goorsky1

University of California, Los Angeles1,Sandia National Laboratories2

Show Abstract

11:10 AM - EL04.06.03
Application of Synchrotron X-Ray Topography to Characterization of Selective Area Doping Processes for the Development of Vertical GaN Power Devices

Yafei Liu1,Hongyu Peng1,Tuerxun Ailihumaer1,Shanshan Hu1,Balaji Raghothamachar1,Michael Dudley1

Stony Brook University, The State University of New York1

Show Abstract

11:25 AM - EL04.06.04
Late News: Microstructure Impacts on Performance of GaN Power Switching Devices

Brett Setera1,Aris Christou1

University of Maryland1

Show Abstract

11:40 AM - EL04.06.05
MOCVD GaN Epitaxy with Fast Growth Rates

Yuxuan Zhang1,Zhaoying Chen1,Wenbo Li1,Aaron Arehart1,Steven Ringel1,Hongping Zhao1

The Ohio State University1

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11:55 AM - EL04.06.06
Influence of Surface Treatments on the Structure and Properties of GaN Layers

Jiaheng He1,Guanjie Cheng1,Maggie Chen1,Zhirong Zhang1,Sam Frisone1,Alexandra Zimmerman1,Fabian Naab1,Sizhen Wang2,Bingjun Li2,Jung Han2,Rachel Goldman1

University of Michigan–Ann Arbor1,Yale University2

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12:10 PM - EL04.06.07
X-Ray Diffraction Studies of GaN p-i-n Structures for High Power Electronics

Alexandra Zimmerman1,Jiaheng He1,Guanjie Cheng1,Davide del Gaudio1,Jordan Occena1,Fabian Naab1,Mohsen Nami2,Bingjun Li2,Jung Han2,Rachel Goldman1

University of Michigan–Ann Arbor1,Yale University2

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EL04.07: Ga2O3 I
Session Chairs
Sriram Krishnamoorthy
Hongping Zhao
Monday PM, April 19, 2021
EL04

1:00 PM - *EL04.07.01
Defects in b-Ga2O3—An Ultra High-Resolution Scanning/Transmission Electron Microscopy Imaging and Spectroscopy

Nasim Alem1,Adrian Chmielewski1

The Pennsylvania State University1

Show Abstract

1:25 PM - EL04.07.02
Mg Acceptor Doping in MOCVD (010) β-Ga2O3

Zixuan Feng1,A F M Anhar Uddin Bhuiyan1,Nidhin Kalarickal1,Siddharth Rajan1,Hongping Zhao1

The Ohio State University1

Show Abstract

1:40 PM - EL04.07.03
Acceptors in Gallium Oxide

Matthew McCluskey1,Jani Jesenovec1,Jacob Ritter1,Christopher Pansegrau1,John McCloy1

Washington State University1

Show Abstract

1:55 PM - EL04.07.04
High-Mobility Low-Temperature Metalorganic Vapor Epitaxy Grown (010) β-Ga2O3 Homoepitaxial Films and Its Application to Realize Low Resistance Ohmic Contacts

Arkka Bhattacharyya1,Praneeth Ranga1,Saurav Roy1,Sriram Krishnamoorthy1

The University of Utah1

Show Abstract

2:10 PM - EL04.07.05
MOCVD Epitaxy of β-(AlxGa1−x)2O3 Films on (100) and (-201) β-Ga2O3 Substrates with Al Compositions up to 52%

A F M Anhar Uddin Bhuiyan1,Zixuan Feng1,Jared Johnson1,Hsien-Lien Huang1,Jinwoo Hwang1,Hongping Zhao1

The Ohio State University1

Show Abstract

2:25 PM - EL04.07.06
Carrier Density in Ga2O3 Measured by Infrared Absorption

Etienne Gheeraert1,Ernesto Gribaudo1,Toshimitsu Ito2

Université Grenoble Alpes1,AIST2

Show Abstract

2:40 PM - EL04.07.07
Late News: Ge Doping of Epitaxial β-Ga2O3 Films by MOCVD

Fikadu Alema1,George Seryogin1,Alexei Osinsky1,Andrei Osinsky1

Agnitron Technology Incorporated1

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EL04.08: Ga2O3 II
Session Chairs
Sriram Krishnamoorthy
Monday PM, April 19, 2021
EL04

4:00 PM - *EL04.08.01
Electro-Thermal Co-Design of a Gallium Oxide MODFET

Sukwon Choi1

The Pennsylvania State University1

Show Abstract

4:25 PM - EL04.08.02
Thermal Annealing of a-Ga2O3 on the Millisecond Time Scale and the Observation of γ-Phase Inclusions

Katie Gann1,Ming-Chiang Chang1,Aine Connolly1,Duncan Sutherland1,Maximillian Amsler1,R. Bruce van Dover1,Michael Thompson1

Cornell University1

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4:40 PM - EL04.08
Discussion Time


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4:55 PM - EL04.08.04
Thermal Transport Across Metal/β-Ga2O3 Interfaces

Jingjing Shi1,Chao Yuan1,Shangkun Wang1,Riley Hanus1,Zhe Cheng1,2,Samuel Graham1

Georgia Institute of Technology1,University of Illinois at Urbana-Champaign2

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5:10 PM - EL04.08.05
Computational Fermi Level Engineering and Doping-Type Conversion of Ga2O3 via Three-Step Processing

Anuj Goyal1,Andriy Zakutayev1,Vladan Stevanovic2,Stephan Lany1

National Renewable Energy Laboratory1,Colorado School of Mines2

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5:25 PM - *EL04.08.06
Thermal and Electrical Properties of Ga2O3 FETs and Diodes

Martin Kuball1

University of Bristol1

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EL04.09: Ga2O3 III
Session Chairs
Nasim Alem
Masataka Higashiwaki
Hongping Zhao
Tuesday AM, April 20, 2021
EL04

8:00 PM - EL04.09.01
Late News: Prospects for Donor-Doping AlGO Alloys

John Lyons2,Joel Varley1,Darshana Wickramaratne2

Lawrence Livermore National Laboratory1,U.S. Naval Research Laboratory2

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8:15 PM - EL04.09.02
Control of Surface Morphologies of M-Plane α-Al2O3 Homoepitaxial Films Using Plasma-Assisted Molecular Beam Epitaxy

Riena Jinno1,Hironori Okumura1

University of Tsukuba1

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8:30 PM - EL04.09.03
Killer Defects in β-Ga2O3 Schottky Barrier Diodes Observed by Ultrahigh Sensitive Emission Microscopy and Synchrotron X-Ray Topography

Makoto Kasu1,Sayleap Sdoeung1,Kohei Sasaki2,Katsumi Kawasaki3,Jun Hirabayashi3,Akito Kuramata2

Saga University1,Novel Crystal Technology, Inc.2,TDK Corporation3

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8:45 PM - EL04.09.05
Growth and Characterization of MOVPE-Grown Low Sheet Resistance β-(AlxGa1-x)2O3/β-Ga2O3 Heterostructure Channels

Praneeth Ranga1,Arkka Bhattacharyya1,Adrian Chmielewski2,Rujun Sun1,Saurav Roy1,Mike Scarpulla1,Nasim Alem2,Sriram Krishnamoorthy1

The University of Utah1,The Pennsylvania State University2

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9:00 PM - EL04.09
BREAK


9:15 PM - EL04.09.06
Structural Analysis of Ion Implanted and Exfoliated (010) and (-201) β-Ga2O3

Michael Liao1,Yekan Wang1,Kenny Huynh1,Fengwen Mu2,Tiangui You3,Wenhui Xu3,Zhe Cheng4,Jingjing Shi4,Tadatomo Suga5,Xin Ou3,Samuel Graham4,Mark Goorsky1

University of California, Los Angeles1,Institute of Microelectronics of Chinese Academy of Science2,Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences3,Georgia Institute of Technology4,Meisei University5

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9:30 PM - EL04.09.07
Mg Acceptor Level in Ga2O3 as Studied by Photo-Induced Electron Paramagnetic Resonance

Mary Zvanut1,Suman Bhandari1

The University of Alabama at Birmingham1

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9:45 PM - EL04.09
Discussion Time


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10:00 PM - EL04.09.09
Recessed Gate Enhancement-Mode Ultrawide Bandgap AlxGa1-xN Channel MOSHFET with Drain Current 0.48 A/mm and Threshold Voltage +3.6 V

Shahab Mollah1,Kamal Hussain1,Abdullah Mamun1,Mikhail Gaevski1,Grigory Simin1,MVS Chandrashekhar1,Asif Khan1

University of South Carolina1

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2021-04-20   Show All Abstracts

Symposium Organizers

Hongping Zhao, The Ohio State University
Masataka Higashiwaki, National Institute of Information & Comm Tech
Robert Kaplar, Sandia National Laboratories
Julien Pernot, University of Grenoble

Symposium Support

Silver
Taiyo Nippon Sanso
EL04.10: Diamond I
Session Chairs
Robert Nemanich
Julien Pernot
Tuesday AM, April 20, 2021
EL04

8:00 AM - *EL04.10.01
Growth of High-Purity Diamond Films and Doping for Quantum Device Applications

Tokuyuki Teraji1

National Institute for Materials Science1

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8:25 AM - EL04.10.02
Removal of Mechanical Polishing-Induced Nanoscale Damage in Diamond by Chemical Mechanical Polishing (CMP)

Koji Koyama1,2,Naoki Fujita1,Seong-Woo Kim1,Mamoru Yoshimoto2

Adamant Namiki Precision Jewel Co., Ltd.1,Tokyo Institute of Technology2

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