This tutorial is intended for young researchers (students and post-graduates within three years of degree completion) who are active in the field of thin-film solar cells and would like to learn the fundamentals of characterization methods that are being
used in research and development of these materials and devices. All presentations will be given by young, yet experienced researchers who are active in the characterization of Si-, III-V-, chalcogenide-, kesterite-, as well as halide-perovskite-based
Although these materials will be discussed as model systems, the presentations will primarily focus on the characterization and simulation techniques and thus should be of interest to participants from other symposia as well (at the MRS Spring Meetings
2007, 2009, and 2013, similar tutorials were standing-room only).
10:00 am – 10:05 am—Welcome and Brief Introduction
Daniel Abou-Ras, Helmholtz-Zentrum Berlin
10:05 am – 11:35 am—J-V and IQE—Measurement Fundamentals and Introductory Device Modelling with Advanced Analysis for Photovoltaic Applications
Alexandra Bothwell, Colorado State
Introduction to current density-voltage (J-V) and quantum efficiency (QE) measurements including essentials to measurement setup and data analysis. Expanded application of J-V and QE data to photovoltaic performance loss quantification: how the combination
of meaningful measurements and fundamental photovoltaic concepts such as the Shockley-Queisser limit and non-ideal diode equation can be used to understand dominant loss mechanisms in solar cells. Basic outline of SCAPS 1-D modeling as a companion
analysis tool to supplement interpretation of device operation.
11:50 am – 1:05 pm—Tandem Devices and Advanced Measurements
Veronique Gevaerts, Netherlands Organisation for Applied Scientific Research (TNO)
Introduction into tandem and multijunction devices: boosting solar cell efficiencies, tandems with Perovskites, and 2T vs 4T. Semitransparent electrodes and recombination layers for tandem fabrication. Challenges in analyzing electrical J-V measurements
of so-called two terminal (2T) devices and how to properly measure EQE with bias illumination and voltage.
1:20 pm – 2:35 pm—Photoluminescence Characterization of Photovoltaic Materials and Devices—From Material Properties to Loss Analysis
Arthur Onno, Arizona State University
- Theoretical background on semiconductor photoluminescence
- Basic photoluminescence measurement setup
- Spectrally resolved photoluminescence: impact of absorptance spectrum, temperature, injection level, and defect states
- Time-resolved photoluminescence: measurement technique, competing emission dynamics within samples, potential and pitfalls
- Quantitative photoluminescence: accessing the quasi-Fermi-level splitting from a rapid nondestructive measurement
Photoluminescence playbook case study: combining spectrally resolved, quantitative, and time-resolved photoluminescence to understand to origin of voltage losses in cadmium selenium telluride solar cells.
2:50 pm – 4:05 pm—Raman Spectroscopy Characterization from Structure to Defect Engineering
Mirjana Dimitrievska, École Polytechnique Fédérale de Lausanne (EPFL)
Introduction into Raman spectroscopy: regular, resonance, and polarization measurements. How to conduct proper Raman measurements, the most common mistakes. Application of Raman spectroscopy for structural and crystal quality assessments, as well as defect
and secondary phase identification. Building Raman-based methodologies for defect identification and correlation with optoelectronic properties through combinatorial studies.
4:05 pm – 4:10 pm—Final Discussions and Farewell