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Symposium EP11 : Novel Materials for End-of-Roadmap Devices in Logic, Power and Memory

2016-03-28   Show All Abstracts

Symposium Organizers

John Robertson, Cambridge University
Martin M Frank, IBM
Andrew C Kummel, University of California, San Diego
Masaaki Niwa, Tohoku University

Symposium Support

Applied Materials, Inc.
IBM
EP11.1: Carbon Channels and Memory
Session Chairs
Andrew Kummel
John Robertson
Monday PM, March 28, 2016
PCC North, 100 Level, Room 126 A

1:30 PM - EP11.1.01
Exfoliation of Solution-Synthesized Chevron Graphene Nanoribbons onto H:Si(100) and Detailed Electron Characterization via Scanning Tunneling Spectroscopy

Adrian Radocea 2,Mohammad Mehdi Pour 3,Timothy Vo 3,Alexander Sinitskii 3,Joseph Lyding 4,Mikhail Shekhirev 3

1 Materials Science and Engineering Univ of Illinois-Urbana Champ Urbana United States,2 Beckman Institute for Advanced Science and Technology University of Illinois Urbana United States,3 Department of Chemistry and Nebraska Center for Materials and Nanoscience University of Nebraska-Lincoln Lincoln United States2 Beckman Institute for Advanced Science and Technology University of Illinois Urbana United States,4 Department of Electrical and Computer Engineering University of Illinois Urbana United States

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1:45 PM - EP11.1.02
Preparation and Characterization of High-Quality, Grain Boundary-Free Graphene Monolayer

Ji Soo Roh 1,Min Yong Lee 2,Hee Wook Yoon 1,Myung Jin Yoo 1,Ho Bum Park 1

1 Hanyang University Seondong-Gu Korea (the Republic of),1 Hanyang University Seondong-Gu Korea (the Republic of),2 SK Hynix Semiconductor Inc. Icheon-si, Gyeonggi-do Korea (the Republic of)

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2:00 PM - EP11.1.03
Scaling of Device Variability and Subthreshold Swing in Ballistic Carbon Nanotube Transistors

Qing Cao 1,Jerry Tersoff 1

1 IBM T.J. Watson Research Ctr Yorktown Heights United States,

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2:15 PM - EP11.1.04
Direct-Write Patterning and Dynamic Doping of Monolayer Graphene Using Focused Electron Beam Induced Processing (FEBIP)

Songkil Kim 1,Mathias Henry 1,Steve Kim 2,Rajesh Naik 2,Andrey Voevodin 2,Seung Soon Jang 1,Vladimir Tsukruk 1,Andrei Fedorov 1

1 Georgia Inst of Technology Atlanta United States,2 Air Force Research Laboratory Wright Patterson United States

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2:30 PM - EP11.1.05
End-Bonded Contacts for Carbon Nanotube Transistors with Low, Size-Independent Resistance

Qing Cao 1,Shu-Jen Han 1,Jerry Tersoff 1,Wilfried Haensch 1

1 IBM T.J. Watson Research Ctr Yorktown Heights United States,

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2:45 PM - EP11.1.06
Room Temperature Static Doping of 2D Crystals Using an Ion-Locking Electrolyte

Erich Kinder 1,Ashley Fuller 1,Susan Fullerton 2

1 Department of Electrical Engineering Univ of Notre Dame Notre Dame United States,2 Department of Chemical and Petroleum Engineering University of Pittsburgh Pittsburgh United States

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3:00 PM -
BREAK

3:30 PM - *EP11.1.07
Strategies for Selective Deposition of Metal Oxides

Fatemeh Hashemi 1,Woohee Kim 1,Dara Bobb-Semple 1,Stacey Bent 1

1 Dept of Chemical Engineering Stanford University Stanford United States,

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4:00 PM - *EP11.1.08
Novel High Performance NV-Working Memory with Spintronics and Vertical MOSFET Technology

Tetsuo Endoh 3

1 Center for Innovative Integrated Electronic Systems Tohoku University Sendai Japan,2 Graduate School of Engineering Tohoku University Sendai Japan,3 JST-ACCEL Sendai Japan,

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4:30 PM - EP11.1.09
Compressible Organic Thin-Films for Tunneling Nanoelectromechanical Switches

Farnaz Niroui 1,Ellen Sletten 1,Timothy Swager 1,Jeffrey Lang 1,Vladimir Bulovic 1

1 Massachusetts Institute of Technology Cambridge United States,

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2016-03-29   Show All Abstracts

Symposium Organizers

John Robertson, Cambridge University
Martin M Frank, IBM
Andrew C Kummel, University of California, San Diego
Masaaki Niwa, Tohoku University

Symposium Support

Applied Materials, Inc.
IBM
EP11.2: III-V Channels including GaN
Session Chairs
Debdeep Jena
Andrew Kummel
Tuesday PM, March 29, 2016
PCC North, 200 Level, Room 223

1:30 PM - *EP11.2.01
Advantages of PEALD Dielectrics on GaN Materials

Brianna Eller 1,Mei Hao 1,Srabanti Chowdhury 1,Robert Nemanich 1

1 Arizona State Univ Tempe United States,

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2:00 PM - EP11.2.02
Oxide Charge Modification using N2 Plasma Enhanced Atomic Layer Deposition to Produce E-Mode Al2O3/GaN Device Operation

Muhammad Adi Negara 1,Rathnait Long 1,Paul McIntyre 1

1 Stanford University Stanford United States,

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2:15 PM - *EP11.2.03
Border Trap Passivation in InGaAs MOS Gate Stacks

Paul McIntyre 1

1 Stanford Univ Stanford United States,

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2:45 PM - EP11.2.04
Chemical Passivation of III-V Semiconductors Using Alkanethiolate Layers

Yissel Contreras 1,Pablo Mancheno-Posso 1,Anthony J. Muscat 1

1 Chemical and Environmental Engineering University of Arizona Tucson United States,

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3:00 PM -
BREAK

3:30 PM - EP11.2.05
Treatment and Characterization of InN (0001) Surface

Sang Wook Park 1,Kasra Sardashti 1,Jong Youn Choi 1,S.M.Moududul Islam 2,Debdeep Jena 2,Hyunwoong Kim 1,Andrew Kummel 1

1 University of California - San Diego La Jolla United States,2 University of Notre Dame Notre Dame United States

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3:45 PM - *EP11.2.06
Prospects and Materials Challenges for Nitride Tunneling Transistors

Debdeep Jena 1

1 Departments of Electrical and Computer Engineering and Materials Science and Engineering Cornell University Ithaca United States,

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4:15 PM - EP11.2.07
Self-Limiting CVD of an Air Stable Silicon Oxide Bilayer on InGaAs(001)-(2x4) in Preparation for Subsequent Silicon or Gate Oxide ALD

Mary Edmonds 1,Tyler Kent 1,Steven Wolf 1,Jessica Kachian 2,Mei Chang 2,Daniel Alvarez 3,Ravi Droopad 4,Andrew Kummel 1

1 Univ of California-San Diego La Jolla United States,2 Applied Materials Sunnyvale United States3 Rasirc, Inc. San Diego United States4 Ingram School of Engineering Texas State University San Marcos United States

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4:30 PM - EP11.2.08
Kinetic Monte Carlo Studies of Silicon Dopant Diffusion in InGaAs

Mardochee Reveil 1,Jingyang Wang 2,Michael Thompson 3,Paulette Clancy 1

1 Chemical and Biomolecular Engineering Cornell University Ithaca United States,2 Applied Engineering Physics Cornell University Ithaca United States3 Materials Science and Engineering Cornell University Ithaca United States

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4:45 PM - EP11.2.09
Metal Antimonide ALD by Silyl Halide Elimination Reactions

Jacob Woodruff 1,Brennan Milligan 1,Michael Givens 1

1 ASM America Phoenix United States,

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2016-03-30   Show All Abstracts

Symposium Organizers

John Robertson, Cambridge University
Martin M Frank, IBM
Andrew C Kummel, University of California, San Diego
Masaaki Niwa, Tohoku University

Symposium Support

Applied Materials, Inc.
IBM
EP11.3: Transition Metal Dichalcogenides
Session Chairs
Andrew Kummel
Stephen McDonnell
Wednesday AM, March 30, 2016
PCC North, 200 Level, Room 223

8:00 AM - EP11.3.01
ZrSiS: A New Stable Non-Toxic 3 D Dirac Semimetal

Schoop Leslie 1,Mazhar Ali 2,Carola Strasser 1,Viola Duppel 1,Stuart Parkin 3,Bettina Lotsch 1,Christian Ast 1

1 Max Planck Institute for solid state research Stuttgart Germany,2 IBM Almaden Almaden United States3 Max Planck Institute for Mircrostructure Physics Halle Germany

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8:15 AM - EP11.3.02
Van der Waals Materials Benchmarked for End of Roadmap FETs

Somaia Sylvia 1,Khairul Alam 2,Roger Lake 1

1 University of California Riverside Riverside United States,2 East West University Dhaka Bangladesh

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8:30 AM - *EP11.3.03
Electronic Properties and Scaling Aspects of Transition Metal Dichalcogenide and Black Phosphorus Field-Effect Transistors

Joerg Appenzeller 1,Stephen McDonnell 1

1 Purdue University West Lafayette United States,

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9:00 AM - *EP11.3.04
Electronics in Flatland: Novel Analog, Logic and Memory Devices in 2D Materials

Sanjay Banerjee 1

1 Univ of Texas-Austin Austin United States,

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9:30 AM -
BREAK

EP11.4: TMDs and III-V Semiconductors
Session Chairs
Sanjay Banerjee
Andrew Kummel
Wednesday AM, March 30, 2016
PCC North, 200 Level, Room 223

10:00 AM - *EP11.4.01
Defect, Metal Contact, and Band Offsets of Transition Metal Dichalcogenides

Yuzheng Guo 2

1 Univ of Cambridge Cambridge United Kingdom,2 Harvard University Boston United States,

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10:30 AM - *EP11.4.02
High-K Gate Oxides on 2D Materials

Stephen McDonnell 2,Angelica Azcatl 1,Peng Zhao 1,Christopher Hinkle 1,Chadwin Young 1,Jiyoung Kim 1,Robert Wallace 1

1 Department of Materials Science and Engineering University of Texas at Dallas Richardson United States,2 Department of Materials Science and Engineering University of Virginia Charlottesville United States,1 Department of Materials Science and Engineering University of Texas at Dallas Richardson United States

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11:00 AM - EP11.4.03
Design of Band Offsets for Transition Metal Dichalcogenide Tunnel FETs

John Robertson 1,Yuzheng Guo 1

1 Cambridge Univ Cambridge United Kingdom,

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11:15 AM - *EP11.4.04
III-V Nanowire Devices for Heterogeneous Integration with Si

Heinz Schmid 1,Mattias Borg 1,Kirsten Moselund 1,Davide Cutaia 1,Heike Riel 1

1 IBM Research GmbH Rueschlikon Switzerland,

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11:45 AM - EP11.4.05
Improving Dopant Activation in III-V Materials Using Laser Spike Annealing

Victoria Sorg 1,Suki Zhang 2,Megan Hill 3,Paulette Clancy 1,Michael Thompson 4

1 Chemical Engineering Cornell University Ithaca United States,2 Electrical amp; Computer Engineering Purdue University West Lafayette United States3 Material Science Northwestern University Evanston United States4 Material Science Cornell University Ithaca United States

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EP11.5: Resistive RAM
Session Chairs
Martin Frank
Rainer Waser
Wednesday PM, March 30, 2016
PCC North, 200 Level, Room 223

1:30 PM - EP11.5.01
Tomographic Filament Observation and Scaling Projection of RRAM in 3 x 3 nm Dimension

Umberto Celano 2,Yi Hou 3,Ludovic Goux 1,Andrea Fantini 1,Robin Degraeve 1,Olivier Richard 1,Hugo Bender 1,Malgorzata Jurczak 1,Wilfried Vandervorst 2

1 IMEC Leuven Belgium,2 Department of Physics and Astronomy KU Leuven Leuven Belgium,3 Peking University Beijing China1 IMEC Leuven Belgium

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1:45 PM - *EP11.5.02
Switching Kinetics of Redox-Based Nanoionic Elements

Rainer Waser 2,Regina Dittmann 1,Ilia Valov 1,Stephan Menzel 1

1 Forschungszentrum Julich Julich Germany,2 IWE RWTH Aachen University Aachen Germany,1 Forschungszentrum Julich Julich Germany

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2:15 PM - EP11.5.03
In Situ Nanoscale Plasmon-Enhanced Spectroscopy In Oxide Based Resistive Switches

Stefan Tappertzhofen 1,Giuliana Di Martino 2,Jeremy Baumberg 2,Stephan Hofmann 1

1 Department of Engineering University of Cambridge Cambridge United Kingdom,2 NanoPhotonics Centre University of Cambridge Cambridge United Kingdom

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2:30 PM - *EP11.5.04
2D Electrolytes for the Development of 2D Crystal Memory

Susan Fullerton 2,Ke Xu 1,Hao Lu 2,Weihua Wang 3,Hanchul Kim 3,Iljo Kwak 4,Kyeongjae Cho 3,Andrew Kummel 4,Alan Seabaugh 2

1 Department of Chemical and Petroleum Engineering University of Pittsburgh Pittsburgh United States,2 Department of Electrical Engineering University of Notre Dame Notre Dame United States,1 Department of Chemical and Petroleum Engineering University of Pittsburgh Pittsburgh United States2 Department of Electrical Engineering University of Notre Dame Notre Dame United States3 Department of Materials Science and Engineering University of Texas at Dallas Richardson United States4 Department of Chemistry University of California, San Diego La Jolla United States

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3:00 PM -
BREAK

3:30 PM - EP11.5.05
ReRAM Filament Formation and Characterization in ALD TiO2 by Ionic Liquid Gating

Kechao Tang 1,Fei Hui 2,Trevor Petach 1,David Goldhaber-Gordon 1,Mario Lanza 2,Paul McIntyre 1

1 Stanford Univ Stanford United States,2 Soochow University Suzhou China

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3:45 PM - *EP11.5.06
Materials Engineering for ReRAM, STTRAM, DRAM and NAND Applications

Nirmal Ramaswamy 1

1 Emerging Memory Cell Manager Micron Technology Inc. Boise United States,

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4:15 PM - EP11.5.07
Relevance of Non-Equilibrium Defect Generation Processes to Resistive Switching in TiO2

Keith McKenna 1,Samir Abdelouahed 1

1 University of York York United Kingdom,

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4:30 PM - EP11.5.08
Nanoscale Hafnium Oxide RRAM Devices Exhibit Pulse Dependent Behavior and Multi-Level Resistance Capability

Karsten Beckmann 1,Joshua Holt 1,Nathaniel Cady 1,Joseph Van Nostrand 2

1 SUNY Polytechnic Inst Albany United States,2 Air Force Research Laboratory/RITB Rome United States

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4:45 PM - EP11.5.09
Filament Nature and Thermal Dynamics in Switched and Endurance Failure RRAM Devices

Jonghan Kwon 1,Abhishek Sharma 1,Chao Yang Chen 2,Andrea Fantini 2,Malgorzata Jurczak 2,James Bain 1,Yoosuf Picard 1,Marek Skowronski 1

1 Carnegie Mellon University Pittsburgh United States,2 IMEC Leuven Belgium

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EP11.6: Poster Session
Session Chairs
Wednesday PM, March 30, 2016
Sheraton, Third Level, Phoenix Ballroom

8:00 PM - EP11.6.01
Tuning Stoichiometry in Atomic Layer Deposited NiOx by Changing Deposition Temperature

Raisul Islam 1,Nobi Fuchigami 2,Pranav Ramesh 1,Donovan Lee 2,Karl Littau 2,Kurt Weiner 2,Krishna Saraswat 1

1 Electrical Engineering Stanford University Stanford United States,2 Intermolecular Inc. San Jose United States

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8:00 PM - EP11.6.02
Evaluation of Dynamic Negative Capacitance Ferroelectric MOSFET Characteristics for Low Power Circuit Application

Yang Li 2,Yong Lian 1,Kui Yao 2,Ganesh Samudra 1

1 National Univ of Singapore Singapore Singapore,2 Institute of Materials Research and Engineering. A*STAR (Agency for Science, Technology and Research) Singapore Singapore,1 National Univ of Singapore Singapore Singapore2 Institute of Materials Research and Engineering. A*STAR (Agency for Science, Technology and Research) Singapore Singapore

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8:00 PM - EP11.6.03
Activation Ratio of Heavily Phosphorus Doped Silicon with a New Factor

Minhyeong Lee 1,Sun-Wook Kim 1,Eunjung Ko 1,Hyunchul Jang 1,Daehong Ko 1

1 Yonsei Univ Seoul Korea (the Republic of),

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8:00 PM - EP11.6.04
Fabrication of Porous Layer-by-Layer Materials as Low-k Dielectrics for Electronic Interconnects

Daekyun Jeong 1,Jiwon Lee 1,Jaegab Lee 1

1 Kookmin University Seoul Korea (the Republic of),

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8:00 PM - EP11.6.05
The Study of Random Dopant Fluctuation (RDF) Effects for Varying Fin Height on 10-nm n-Type Si FinFET

Changho Shin 1,Hyun-Yong Yu 1

1 Korea Univ Seoul Korea (the Republic of),

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8:00 PM - EP11.6.06
Electrical and Optical Characterization of Si1-xGex Layers Grown by RF-PECVD

Ghada Dushaq 1,Mahmoud Rasras 1,Ammar Nayfeh 1

1 Masdar Institute Abu Dhabi United Arab Emirates,

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8:00 PM - EP11.6.07
The Metal-Interlayer-Semiconductor Source/Drain with Contact Metal of Tantalum Nitride (TaN) for 7 nm n-type Ge FinFET

Ahn Juhan 1,Hyun-Yong Yu 1

1 Korea Univ. Seoul, Korea Korea (the Republic of),

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8:00 PM - EP11.6.08
The Screen Effect in Resistive Switching Memory Prepared by Thermal Process Based-Atomic Layer Deposition

Yihui Sun 1,Xiaoqin Yan 1,Xin Zheng 1,Yue Zhang 1

1 University of Science and Technology Beijing School of Materials Science and Engineering Beijing China,

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8:00 PM - EP11.6.09
Electrical and Structural Properties of Ni-InGaAs with and without InAs Capping Layer

Sim-Hoon Yuk 1,Chel-Jong Choi 1

1 School of Semiconductor and Chemical Engineering Chonbuk National University Jeonju Korea (the Republic of),

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8:00 PM - EP11.6.10
Depth Characterization of Chemical States in GeSn Thin Film by HAXPES

Koji Usuda 1,Riichiro Takaishi 1,Masahiko Yoshiki 1,Kohei Suda 2,Atsushi Ogura 2,Mitsuhiro Tomita 1

1 Corporate Ramp;D Center Toshiba Corporation Kawasaki Japan,2 Nanotech Lab. Meiji University Kasawaki Japan

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8:00 PM - EP11.6.11
Polarization Switching of the Incommensurate Phases Induced by Flexoelectric Coupling in Ferroelectric Thin Films

Limei Jiang 1

1 School of Materials Science and Engineering Xiangtan University Xiangtan China,

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8:00 PM - EP11.6.12
Dead Layer Effect and Its Elimination in Ferroelectric Thin Film with Oxide Electrodes

Yichun Zhou 1,Limei Jiang 1

1 School of Materials Science and Engineering Xiangtan University Xiangtan China,

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8:00 PM - EP11.6.13
Pseudo-Single Crystal Ferroelectric Grown by Selectively Nucleated Lateral Crystallization for High-Performance Ferroelectric Field-Effect Transistors

Jaehyo Park 1,Seung Ki Joo 1

1 Department of Material Science and Engineering, Seoul National University Seoul Korea (the Republic of),

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8:00 PM - EP11.6.14
Al-Graded AlxGa1-xN Layers on Vicinal GaN(0001) Substrate: Growth, Structure and Electrical Properties

Andrian Kuchuk 2,Petro Lytvyn 2,Chen Li 1,Hryhorii Stanchu 2,Yuriy Mazur 1,Morgan Ware 1,Mourad Benamara 1,Vasyl Kladko 2,Aleksander Belyaev 2,Gregory Salamo 1

1 Institute for Nanoscience and Engineering, University of Arkansas Fayetteville United States,2 V.Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine Kyiv Ukraine,2 V.Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine Kyiv Ukraine1 Institute for Nanoscience and Engineering, University of Arkansas Fayetteville United States

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8:00 PM - EP11.6.15
Characterizing Device Properties of Potential Ferroelectric Co-Crystals

Timothy Reece 1,Axel Enders 2

1 Univ of Nebraska-Kearney Kearney United States,2 Department of Physics and Astronomy University of Nebraska at Lincoln Lincoln United States

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8:00 PM - EP11.6.16
FTIR Ellipsometry Study on RF Sputtered Permalloy-Oxide Thin Films

Md Abdul Ahad Talukder 1,Yubo Cui 1,Maclyn Compton 1,Wilhelmus Geerts 1,Luisa Scolfaro 1,Stefan Zollner 2

1 Texas State Univ San Marcos United States,2 Physics NMSU Santa Cruz United States

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8:00 PM - EP11.6.17
Ab Initio Modeling of Vacancies, Antisites, and Si Dopants in Ordered, CuAu-I Type, InGaAs

Jingyang Wang 1,Binit Lukose 2,Michael Thompson 3,Paulette Clancy 2

1 School of Applied and Engineering Physics Cornell University Ithaca United States,2 School of Chemical and Biomolecular Engineering Cornell University Ithaca United States3 Department of Materials Science and Engineering Cornell University Ithaca United States

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8:00 PM - EP11.6.18
Effect of Al2O3 Monolayer Inclusion in Symmetric Nanoscale Metal-Insulator-Metal Capacitors

Sita Dugu 1,Shojan Pavunny 1,Ram Katiyar 1

1 University of Puerto Rico San Juan United States,

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8:00 PM - EP11.6.19
Silicon Substituted Strontium Titanate: A Promising High-k Dilectric Material

Sita Dugu 1,Shojan Pavunny 1,Yogesh Sharma 1,Ram Katiyar 1

1 University of Puerto-Rico San Juan United States,

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8:00 PM - EP11.6.20
Studies on Holmium Hafnium Oxide for Potential High-k Dielectric Device Applications

Shojan Pavunny 1,Yogesh Sharma 1,Sudheendran Kooriyattil 1,Sita Dugu 1,Rajesh Katiyar 1,James Scott 2,Ram Katiyar 1

1 Department of Physics and Institute for Functional Nanomaterials Univ of Puerto Rico San Juan United States,1 Department of Physics and Institute for Functional Nanomaterials Univ of Puerto Rico San Juan United States,2 Department of Physics, Cavendish Laboratory, University of Cambridge Cambridge United Kingdom

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8:00 PM - EP11.6.21
Intrinsic Vacancy in Monolayer GaSe: A First-Principles Study by Screened Exchange Hybrid Functional

Dameng Liu 1,Yuzheng Guo 2,John Robertson 3

1 Mechanical Engineering Tsinghua University Beijing China,2 Harvard University Cambridge United States3 University of Cambridge Cambridge United Kingdom

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8:00 PM - EP11.6.22
Vanadium Doped Hafnium Oxide: A Potential High-k Dielectric Gate-Stack Material

Yogesh Sharma 1,Radhe Agarwal 1,Shojan Pavunny 1,Ram Katiyar 1

1 University of Puerto Rico San Juan United States,

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8:00 PM - EP11.6.23
Atomic Layer Deposition of RuO2 and Ru Thin-Films Using Ru(DMBD)(CO)3 Precursor

Dustin Austin 1,Melanie Jenkins 1,John McGlone 1,Charles Dezelah 2,Derryl Allman 3,Sallie Hose 3,John Conley 1

1 Oregon State Univ Corvallis United States,2 SAFC Hitech, Inc. / Sigma-Aldrich Haverhill United States3 ON Semiconductor Gresham United States

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8:00 PM - EP11.6.24
Prospects and Issues of Nanomaterials Use in Microelectronics

Michael Jank 1,Anton Bauer 1,Lothar Frey 1

1 Fraunhofer IISB Erlangen Germany,

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8:00 PM - EP11.6.25
Flexoelectric Switching in Mono-Domain BiFeO3 Film to Investigate In-Plane Flexoelectric Effect

Sungmin Park 2,Saikat Das 2,Tae Won Noh 2

1 Physics and Astronomy Seoul National University Seoul Korea (the Republic of),2 Center for Correlated Electron Systems Institute for Basic Science Seoul Korea (the Republic of),

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8:00 PM - EP11.6.26
Ab Initio Simulations of Higher Index Si:SiO2 Interfaces for FinFET Transistors

Hongfei Li 1,Yuzheng Guo 1,John Robertson 1

1 University of Cambridge Cambridge United Kingdom,

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8:00 PM - EP11.6.27
Optical Readout Write Once Read Many Memory in Ag/ MEH PPV/ ITO Device

Viet Cuong Nguyen 1,Kenji Chee 1,Pooi See Lee 1

1 Nanyang Technology University Singapore Singapore,

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2016-03-31   Show All Abstracts

Symposium Organizers

John Robertson, Cambridge University
Martin M Frank, IBM
Andrew C Kummel, University of California, San Diego
Masaaki Niwa, Tohoku University

Symposium Support

Applied Materials, Inc.
IBM
EP11.7: High K/Metal Gate
Session Chairs
Martin Frank
Shariq Siddiqui
Thursday AM, March 31, 2016
PCC North, 200 Level, Room 223

8:00 AM - EP11.7.01
Rare Earth Element Doping of GeO2 for the Improved Interface Quality in Ge MOSFETs

Hongfei Li 1,Yuzheng Guo 1,John Robertson 1

1 University of Cambridge Cambridge United Kingdom,

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8:15 AM - *EP11.7.02
High-k/Metal Gate Innovations in FinFET Era

Takashi Ando 1,Balaji Kannan 2,Unoh Kwon 2,Pouya Hashemi 1,Tenko Yamashita 3,Vijay Narayanan 1

1 IBM T.J. Watson Research Center Ossining United States,2 IBM SRDC Hopewell Junction United States3 IBM Research Albany United States

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8:45 AM - EP11.7.03
Wet Sulfur Passivation of the Interfaces between High-k Dielectrics and SiGe(001)

Kasra Sardashti 1,Max Clemons 1,Kai-Ting Hu 1,Serge Oktyabrsky 2,Bhagawan Sahu 3,Lin Dong 4,Naomi Yashida 4,Jessica Kachian 4,Andrew Kummel 1

1 Univ of California-San Diego La Jolla United States,2 University at Albany—State University of New York Albany United States3 TD Research, GLOBALFOUNDRIES USA Albany United States4 Applied Materials Sunnyvale United States

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9:00 AM - EP11.7.04
Interface Defect Reduction on High-k/Ge and SiGe MOS Device

LiangLiang Zhang 1,Xiaochi Chen 1,James Harris 1,Paul McIntyre 1,Vinaayk Hassan 2,Majeed Foad 2

1 Stanford Univ Stanford United States,2 Applied Materials Inc. Santa Clara United States

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9:15 AM - EP11.7.05
Passivation, Functionalization, and Nucleation of TiO2 on SiGe(110) for MIS Structure

Sang Wook Park 1,Jong Youn Choi 1,Naomi Yashida 2,Adam Brandt 2,Jessica Kachian 2,Evgueni Chagarov 1,Andrew Kummel 1

1 Univ of California-San Diego La Jolla United States,2 Applied Materials Sunnyvale United States

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9:30 AM -
BREAK

EP11.8: High K/Metal Gate and Ferroelectrics
Session Chairs
Takashi Ando
Paul McIntyre
Thursday AM, March 31, 2016
PCC North, 200 Level, Room 223

10:00 AM - *EP11.8.01
BTI Reliability of High-Mobility Channel Devices with High-k Dielectric Stacks: SiGe, Ge, and InGaAs

Jacopo Franco 1,Ben Kaczer 1,Abhitosh Vais 1,AliReza Alian 1,Hiroaki Arimura 1,Vamsi Putcha 2,Sonja Sioncke 1,Niamh Waldron 1,Daisy Zhou 1,Laura Nyns 1,Jerome Mitard 1,Hans Mertens 1,Marc Heyns 2,Guido Groeseneken 2,Naoto Horiguchi 1,Nadine Collaert 1,Dimitri Linten 1,Aaron Thean 1

1 imec Leuven Belgium,1 imec Leuven Belgium,2 KU Leuven Leuven Belgium

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10:30 AM - *EP11.8.02
GeOx Free Interfacial Layer Formation and Its Impact on Physical & Electrical of Metal/High-k/ SixGe1-x Gate Stack

Shariq Siddiqui 1

1 Global Foundries USA Inc. Albany United States,

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11:00 AM - EP11.8.03
Grain-Boundary Effect in Ferroelectric Field-Effect Transistor

Jaehyo Park 1,Seung Ki Joo 1

1 Department of Material Science and Engineering, Seoul National University Seoul Korea (the Republic of),

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11:15 AM - EP11.8.04
TiN-Gated Ferroelectric BaTiO3 Devices on Si and Si1-xGex

Martin Frank 1,Lucie Mazet 2,Eduard Cartier 1,Hiroyuki Miyazoe 1,John Bruley 1,Catherine Dubourdieu 2,Vijay Narayanan 1

1 IBM T. J. Watson Research Center Yorktown Heights United States,2 Institut des Nanotechnologies de Lyon, CNRS, Ecole Centrale de Lyon Ecully France

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11:30 AM - EP11.8.05
Sub-60 mV/decade Subthreshold Swing in Negative Capacitance FinFET Devices

Asif Khan 1,Korok Chatterjee 1,Juan Duarte 1,Zhongyuan Lu 1,Angada Sachid 1,Sourabh Khandelwal, 1,Ramamoorthy Ramesh 1,Chenming Hu 1,Sayeef Salahuddin 1

1 UC Berkeley Berkeley United States,

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11:45 AM - EP11.8.06
Lock Coupled Polarization/Charge Coupling in Pt/BiFeO3/DyScO3/Si Non-Volatile Metal-Ferroelectric-Isulator-Semiconductor Device

Rohit Medwal 1,Surbhi Gupta 1,Shojan Pavunny 1,Rajesh Katiyar 1,Ram Katiyar 1

1 Department of Physics and Institute for Functional Nanomaterials University of Puerto Rico San Juan United States,

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EP11.9: Memory
Session Chairs
Andrew Kummel
John Robertson
Thursday PM, March 31, 2016
PCC North, 200 Level, Room 223

1:45 PM - *EP11.9.01
Theoretical Studies of the Switching Mechanism of the Topological Switching Memory (TRAM) Using Superlattice GeTe/Sb2Te3 Phase Change Memories

Kenji Shiraishi 1

1 Institute of Materials and Systems for Sustainability Nagoya University Nagoya Japan,

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2:15 PM - EP11.9.03
Simulation Study on Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory

Kentaro Kinoshita 3,Ryosuke Koishi 1,Takumi Moriyama 2,Kouki Kawano 1,Hidetoshi Miyashita 1,Sang-Seok Lee 1,Satoru Kishida 3

1 Tottori Univ Tottori Japan,2 Tottori Integrated Frontier Research Center, Tottori University Tottori Japan,3 Tottori University Electric Display Research Center Tottori Japan,1 Tottori Univ Tottori Japan1 Tottori Univ Tottori Japan,2 Tottori Integrated Frontier Research Center, Tottori University Tottori Japan

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