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Symposium EP15 : Diamond Power Electronic Devices

2016-03-29   Show All Abstracts

Symposium Organizers

Julien Pernot, University of Grenoble Alpes
Satoshi Koizumi, National Institute for Materials Science
Robert J. Nemanich, Arizona State University
Mariko Suzuki, Toshiba Corporation

Symposium Support

Advanced Diamond Technologies, Inc. (ADT)
Applied Diamond Inc
Arizona State University | CLAS Department of Physics
Cline Innovations
Fraunhofer Center for Coatings and Diamond Technologies
Institut Universitaire de France
Microwave Enterprises, LTD
Namiki Precision Jewel, Co. Ltd.
Seki Diamond Systems
Universite Grenoble Alpes
EP15.1: Growth and Doping
Session Chairs
Julien Pernot
Daisuke Takeuchi
Tuesday PM, March 29, 2016
PCC North, 100 Level, Room 130

1:30 PM - *EP15.1.01
Recent Achievements On Diamond Vertical Schottky Diodes

Jocelyn Achard 1,Amine Boussadi 1,Karine Isoird 2,David Eon 3,Audrey Valentin 1,Alexandre Tallaire 1,Vianney Mille 1,Alix Gicquel 1

1 LSPM-CNRS Villetaneuse France,2 LAAS-CNRS Toulouse France3 Institut Néel Grenoble France

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2:00 PM - EP15.1.02
Heavily Phosphorus Doping of {111} Homoepitaxial Diamond on Misoriented Substrates

Satoshi Koizumi 1,Taskashi Yamamoto 2,Ryota Ohtani 1,Stoffel Janssens 1

1 NIMS Tsukuba Japan,2 Institut of Quantenoptik University.of Ulm Ulm Germany

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2:15 PM - EP15.1.03
Low Resistivity P+ Single-Crystal Diamond Prepared by Hot-Filament CVD

Shinya Ohmagari 1,Yoshiaki Mokuno 1

1 AIST, Japan Ikeda, Osaka Japan,

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2:30 PM - EP15.1.04
Incorporating Si into Cubic Boron Nitride Films via Plasma Enhanced CVD: Steps to n-Type Doping

Joseph Shammas 1,Robert J. Nemanich 1

1 Department of Physics Arizona State University Tempe United States,

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2:45 PM -
BREAK

EP15.2: Schottky Diodes
Session Chairs
Daniel Araujo
Hitoshi Umezawa
Tuesday PM, March 29, 2016
PCC North, 100 Level, Room 130

3:15 PM - *EP15.2.01
Diamond Schottky Diodes: Expected Performance and Realization

David Eon 1

2 University Grenoble Alpes Grenoble France,1 CNRS Grenoble France,

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3:45 PM - *EP15.2.02
Diamond Material Properties and Resulting Vertical Diode Characteristics

Timothy Grotjohn 2,Steve Zajac 1,Nutthamon Suwanmonkha 1,Ayan Bhattacharya 1,Shreya Nad 1,Amanda Charris 1,Suoming Zhang 1,Nicholas Miller 1,John Albrecht 1,Jes Asmussen 1,Timothy Hogan 1,Chuan Wang 1,Robert Rechenberg 2,Aaron Hardy 2,Michael Becker 2,Thomas Schuelke 2

1 Michigan State University East Lansing United States,2 Fraunhofer Center for Coatings and Diamond Technologies East Lansing United States,1 Michigan State University East Lansing United States2 Fraunhofer Center for Coatings and Diamond Technologies East Lansing United States

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4:15 PM - EP15.2.03
Extremely Low On-Resistance Diamond Vertical Schottky Diode by Ion-Beam-Assisted Lift-Off Technique

Sergei Tarelkin 3,Vitaly Bormashov 2,Alexander Volkov 2,Sergey Troschiev 1,Anton Golovanov 2,Dmitry Prikhodko 2,Dmitry Teteruk 1,Nikolay Kornilov 1,Sergey Buga 2,Vladimir Blank 3

1 Technological Institute for Superhard and Novel Carbon Materials Troitsk Russian Federation,2 Moscow Institute of Physics and Technology Dolgoprudny Russian Federation,3 National University of Science and Technology MISiS Moscow Russian Federation,1 Technological Institute for Superhard and Novel Carbon Materials Troitsk Russian Federation,2 Moscow Institute of Physics and Technology Dolgoprudny Russian Federation1 Technological Institute for Superhard and Novel Carbon Materials Troitsk Russian Federation

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4:30 PM - EP15.2.04
Spectral Sensitization of Boron-Doped Diamond Foam for Prospective Application in Solar Cells

Ladislav Kavan 1,Hana Krysova 1,Zuzana Vlckova Zivcova 1,Weng Siang Yeap 2,Pieter Verstappen 2,Wouter Maes 2,Ken Haenen 2,Feng Gao 3,Christoph Nebel 3

1 J. Heyrovsky Institute of Physical Chemistry Prague Czech Republic,2 Hasselt University Diepenbeek Belgium3 Fraunhofer Institute for Applied Solid State Physics Freiburg Germany

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EP15.3: Poster Session
Session Chairs
Etienne Gheeraert
Mariko Suzuki
Tuesday PM, March 29, 2016
Sheraton, Third Level, Phoenix Ballroom

8:00 PM - EP15.3.01
Future Diamond MOSFETs for Power Electronics

Philippe Bergonzo 1,Richard Jackman 3,Julien Pernot 4,David Eon 1,Etienne Gheeraert 1

1 Institut Neel - CNRS Universite Grenoble Alpes Grenoble France,3 London Centre for Nanotechnology University College London London United Kingdom1 Institut Neel - CNRS Universite Grenoble Alpes Grenoble France,4 Institut Universitaire de France Paris France

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8:00 PM - EP15.3.02
Developing Commercial DC Field Emission Electron Gun Based on Thin Film (N)UNCD

Oksana Chubenko 2,Hao Li 3,Stanislav Baturin 1,Sergey Antipov 1,Anirudha Sumant 3,Sergey Baryshev 1

1 Euclid TechLabs Bolingbrook United States,2 Department of Physics The George Washington University Washington United States,3 Center for Nanoscale Materials Argonne National Laboratory Argonne United States1 Euclid TechLabs Bolingbrook United States

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8:00 PM - EP15.3.03
Monolithic Integration in CVD Diamond: Schottky Power Diodes and Integrated Temperature Sensor

Nicolas Rouger 3,David Eon 3,Gaetan Perez 3,Pierre Olivier Jeannin 2,Pierre Lefranc 2,Etienne Gheeraert 1,Julien Pernot 1,Yvan Avenas 2

2 CNRS, G2Elab Grenoble France,3 Univ. Grenoble Alpes Grenoble France,1 CNRS, Néel Institute Grenoble France,3 Univ. Grenoble Alpes Grenoble France3 Univ. Grenoble Alpes Grenoble France,2 CNRS, G2Elab Grenoble France3 Univ. Grenoble Alpes Grenoble France,1 CNRS, Néel Institute Grenoble France

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8:00 PM - EP15.3.04
Free Standing 1 Micron Thick Nanodiamond Foil Product for H- Stripping to Support Spallation Neutron Source (SNS)

Ratnakar Vispute 1,Akshay Pariti 1,Robert Shaw 2,Michael Plum 2

1 Blue Wave Semiconductors Halethorpe United States,2 Oak Ridge National Laboratory Oak Ridge United States

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8:00 PM - EP15.3.06
Spectroscopic Ellipsometry as Relevant Method for Diamond Growth

David Eon 1,Jessica Bousquet 1,Etienne Bustarret 1

2 University Grenoble Alpes Grenoble France,1 CNRS Grenoble France,

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8:00 PM - EP15.3.07
Synchrotron X-Ray Topography Study of Dislocations and Stacking Faults in Type-IIa Diamond Single Crystals Synthesized under High Pressure and High Temperature

Makoto Kasu 1,Satoshi Masuya 1,Kenji Hanada 1,Takumi Uematsu 1,Tomoya Moribayashi 1,Hitoshi Sumiya 2

1 Dept Electrical Electronic Eng Saga Univ Saga Japan,2 Advanced Materials Ramp;D Labs Sumitomo Electric Industries, Ltd. Itami Japan

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2016-03-30   Show All Abstracts

Symposium Organizers

Julien Pernot, University of Grenoble Alpes
Satoshi Koizumi, National Institute for Materials Science
Robert J. Nemanich, Arizona State University
Mariko Suzuki, Toshiba Corporation

Symposium Support

Advanced Diamond Technologies, Inc. (ADT)
Applied Diamond Inc
Arizona State University | CLAS Department of Physics
Cline Innovations
Fraunhofer Center for Coatings and Diamond Technologies
Institut Universitaire de France
Microwave Enterprises, LTD
Namiki
EP15.4: Heteroepitaxy
Session Chairs
Jocelyn Achard
Tokuyuki Teraji
Wednesday AM, March 30, 2016
PCC North, 100 Level, Room 130

9:00 AM - *EP15.4.01
Dependence of Electronic Performance of Diamond Schottky Barrier Diodes on Fabrication Methods of Substrates

Satoshi Yamasaki 3,Hiroyuki Kawashima 3,Daisuke Kuwabara 3,Tsubasa Matsumoto 2,Hiromitsu Kato 2,Masahiko Ogura 2,Toshiharu Makino 2,Daisuke Takeuchi 2

1 Advanced Power Electronics Research Center AIST Tsukuba Japan,2 Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology (JST) Tsukuba Japan,3 Graduate School of Pure and Applied Sciences Tsukuba University Tsukuba Japan,1 Advanced Power Electronics Research Center AIST Tsukuba Japan,2 Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology (JST) Tsukuba Japan

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9:30 AM - EP15.4.02
Effect of Bias Enhanced Nucleation Parameters on Diamond Heteroepitaxy on Ir/SrTiO3/Si (001)

Kee Han Lee 1,Samuel Saada 1,Jean-Charles Arnault 1,Guillaume Saint-Girons 2,Romain Bachelet 2

1 CEA LIST Gif-Sur-Yvette France,2 INL-CNRS Lyon France

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9:45 AM - EP15.4.03
Challenges in Single-Crystalline Heteroepitaxial Bulk Diamond Substrate: Breakthrough toward Substrate Diameter Expansion

Hideo Aida 1,Seong-Woo Kim 1,Kenjiro Ikejiri 1,Yuki Kawamata 1,Koji Koyama 1,Atsuhito Sawabe 2

1 Namiki Precision Jewel Co. Ltd. Tokyo Japan,2 Aoyama Gakuin University Kanagawa Japan

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10:00 AM -
BREAK

EP15.5: Unipolar Device
Session Chairs
Timothy Grotjohn
Hiroshi Kawarada
Wednesday AM, March 30, 2016
PCC North, 100 Level, Room 130

10:30 AM - *EP15.5.01
Diamond Unipolar Devices for Future Power Electronics

Hitoshi Umezawa 2

1 AIST Osaka Japan,2 Inst. Neel/CNRS Grenoble France,

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11:00 AM - EP15.5.02
Diamond Logic Inverter with Normally-Off Mode Metal-Insulator-Semiconductor Field Effect Transistors

Yasuo Koide 1,J-W Liu 1,M-Y Liao 1,M Imura 1,E Watanabe 1,H Oosato 1

1 NIMS Tsukuba Japan,

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11:15 AM - EP15.5.03
Band Alignments in Diamond MOSFET

Aurelien Marechal 1,Manuela Aoukar 3,Christophe Vallee 3,David Eon 1,Julien Pernot 4,Etienne Gheeraert 1

2 Univ. Grenoble Alpes Grenoble France,1 CNRS, Inst. Neel Grenoble France,2 Univ. Grenoble Alpes Grenoble France,3 CNRS, LTM Grenoble France2 Univ. Grenoble Alpes Grenoble France,1 CNRS, Inst. Neel Grenoble France,4 Institut Universitaire de France Paris France

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11:30 AM - EP15.5.04
Fabrication of Diamond Field-Effect Transistors with Various NO2 Hole-Doping Conditions and Al2O3 Gate Insulator Layers

Makoto Kasu 1,Kenji Hanada 1,Kazuya Harada 1,Yuta Koga 1,Kosuke Funaki 1,Toshiyuki Oishi 1

1 Dept Electrical Electronic Eng Saga Univ Saga Japan,

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11:45 AM - EP15.5.05
Oxide Leakage Current in Oxygen-Terminated Diamond Metal Oxide Semiconductor Capacitors

Thanh-Toan Pham 2,Aurelien Marechal 2,David Eon 1,Pierre Muret 1,Nicolas Rouger 2,Julien Pernot 3

1 Institute Neel - CRNS Grenoble Grenoble France,2 CNRS, G2Elab Grenoble France,1 Institute Neel - CRNS Grenoble Grenoble France2 CNRS, G2Elab Grenoble France1 Institute Neel - CRNS Grenoble Grenoble France,3 Institut Universitaire de France Paris France

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EP15.6: Junction Device I
Session Chairs
Yasuo Koide
Nicolas Rouger
Wednesday PM, March 30, 2016
PCC North, 100 Level, Room 130

1:30 PM - *EP15.6.01
Large Emission Current Density Of Diamond p-i-n Diode Type NEA Electron Emitters

Daisuke Takeuchi 1,Satoshi Koizumi 2,Tsubasa Matsumoto 1,Hiroyuki Kawashima 1,Daisuke Kuwabara 1,Toshiharu Makino 1,Hiromitsu Kato 1,Masahiko Ogura 1,Hideyo Okushi 1,Satoshi Yamasaki 4

1 AIST Tsukuba Japan,2 NIMS Tsukuba Japan3 Kanazawa University Kanazawa Japan,1 AIST Tsukuba Japan4 University of Tsukuba Tsukuba Japan,1 AIST Tsukuba Japan1 AIST Tsukuba Japan,4 University of Tsukuba Tsukuba Japan

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2:00 PM - EP15.6.02
Simulation of Diamond PNP Bipolar Junction Transistors

Raghuraj Hathwar 1,Maitreya Dutta 1,Franz Koeck 2,Robert J. Nemanich 2,Srabanti Chowdhury 1,Stephen Goodnick 1

1 Department of Electrical Engineering Arizona State University Tempe United States,2 Department of Physics Arizona State University Tempe United States

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2:15 PM - EP15.6.03
Doped Diamond Homoepitaxy on (100) Substrates for High Power p-i-n Diodes

Franz Koeck 1,Maitreya Dutta 1,Srabanti Chowdhury 1,Robert J. Nemanich 1

1 Arizona State Univ Tempe United States,

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2:30 PM - EP15.6.04
Electron-Hole Recombination Processes in Diamond Pin Diodes

Daisuke Kuwabara 3,Toshiharu Makino 3,Hiromitsu Kato 3,Daisuke Takeuchi 3,Masahiko Ogura 3,Hideyo Okushi 3,Satoshi Yamasaki 3

1 Graduate School of Pure and Applied Sciences Univ. of Tsukuba Tsukuba Japan,2 Advanced Power Electronics Research Center AIST Tsukuba Japan,3 Core Research of Evolutional Science and Technology (CREST), Japan Science and Technology (JST) CREST/JST Tokyo Japan,2 Advanced Power Electronics Research Center AIST Tsukuba Japan,3 Core Research of Evolutional Science and Technology (CREST), Japan Science and Technology (JST) CREST/JST Tokyo Japan

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2:45 PM - EP15.6.05
Diamond Based Diodes for High Voltage and High Temperature Applications

Maitreya Dutta 1,Franz Koeck 1,Raghuraj Hathwar 1,Stephen Goodnick 1,Robert Nemanich 1,Srabanti Chowdhury 1

1 Arizona State Univ Tempe United States,

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3:00 PM -
BREAK

EP15.7: Characterization and Processing
Session Chairs
Ken Haenen
Satoshi Yamasaki
Wednesday PM, March 30, 2016
PCC North, 100 Level, Room 130

3:30 PM - *EP15.7.01
Diamond/Metal Interface Analysis by STEM-EELS

Daniel Araujo 1,Jose Pinero 1,Gauthier Chicot 2,Abboulaye Traore 2,Julien Pernot 2,Pilar Villar 1

1 UCA Puerto Real Spain,2 Institut Néel Grenoble France

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4:00 PM - EP15.7.02
Diamond on HEMT: Maskless Patterning and Selective Diamond Growth on Passivation Dielectrics

Rajesh Ramaneti 2,Yan Zhou 3,Julian Calvo 3,Christine Koerner 4,Peter Verhoeven 5,Xianjie Liu 6,Paulius Pobedinskas 2,Mats Fahlman 6,Joff Derluyn 7,Martin Kuball 3,Ken Haenen 2

1 Hasselt Univ Diepenbeek Belgium,2 IMOMEC IMEC vzw Diepenbeek Belgium,3 University of Bristol Bristol United Kingdom4 Anton Paar GmbH Graz Austria5 InnoPhysics bv Eindhoven Netherlands6 Linköping University Linköping Sweden7 EpiGaN nv Hasselt Belgium

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4:15 PM - EP15.7.03
Electrical Surface Properties of Ultrananocrystalline and Microcrystalline Diamond Films on HfO2 Layers Via Hot Filament Chemical Vapor Deposition

Jesus Alcantar-Pena 2,Erika Fuentes-Fernandez 1,Geunhee Lee 1,Daniel Berman-Mendoza 2,Ana Gabriela-Montano 3,Karime Ramos-Corella 3,Manuel Quevedo-Lopez 1,Orlando Auciello 4

1 Department of Materials Science and Engineering University of Texas at Dallas Richardson United States,2 Departamento de Investigación en Electrónica Universidad de Sonora Hermosillo Mexico,1 Department of Materials Science and Engineering University of Texas at Dallas Richardson United States2 Departamento de Investigación en Electrónica Universidad de Sonora Hermosillo Mexico1 Department of Materials Science and Engineering University of Texas at Dallas Richardson United States,3 Departamento de Investigación en Polímeros y Materiales Universidad de Sonora Hermosillo Mexico1 Department of Materials Science and Engineering University of Texas at Dallas Richardson United States,4 Department of Bioengineering University of Texas at Dallas Richardson United States

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4:30 PM - EP15.7.04
Thermal Characterization of Diamond Thin Film Heat Spreaders Grown on GaN HEMTs

Yan Zhou 1,Julian Anaya 1,Huarui Sun 1,Rajesh Ramaneti 2,Sien Drijkoningen 2,Paulius Pobedinskas 2,Shannon Nicley 2,Joff Derluyn 3,Ken Haenen 2,Martin Kuball 1

1 University of Bristol Bristol United Kingdom,2 University of Hasselt Hasselt Belgium3 EpiGan Hasselt Belgium

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4:45 PM - EP15.7.05
TEM Study of Homoepitaxial CVD Diamond Lateral Growth for Electronic Applications

Fernando Lloret 1,David Eon 2,Daniel Araujo 1,Pilar Villar 1,Etienne Bustarret 2

1 Universidad de Cadiz Puerto Real Spain,2 CNRS Grenoble France

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2016-03-31   Show All Abstracts

Symposium Organizers

Julien Pernot, University of Grenoble Alpes
Satoshi Koizumi, National Institute for Materials Science
Robert J. Nemanich, Arizona State University
Mariko Suzuki, Toshiba Corporation

Symposium Support

Advanced Diamond Technologies, Inc. (ADT)
Applied Diamond Inc
Arizona State University | CLAS Department of Physics
Cline Innovations
Fraunhofer Center for Coatings and Diamond Technologies
Institut Universitaire de France
Microwave Enterprises, LTD
Namiki
EP15.8: FET
Session Chairs
David Eon
Takayuki Iwasaki
Thursday AM, March 31, 2016
PCC North, 100 Level, Room 128 A

8:30 AM - *EP15.8.01
Diamond Power Electronics: From Device Simulation to Implementation in Power Converters

Nicolas Rouger 2

1 CNRS, G2Elab Grenoble France,2 Univ. Grenoble Alpes, G2Elab Grenoble France,

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9:00 AM - EP15.8.02
Normally-Off C-H Diamond MOSFET with the Breakdown Voltage of Above 2000V

Hiroshi Kawarada 1,Yuya Kitabayashi 1,Masanobu Shibata 1,Yuya Hayashi 1,Atsushi Hiraiwa 1

1 Waseda Univ Tokyo Japan,

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9:15 AM - EP15.8.03
Capacitance Frequency Dispersion in Oxygen Terminated Diamond Metal Oxide Semiconductor Capacitors

Thanh-Toan Pham 1,Pierre Muret 1,Aurelien Marechal 1,David Eon 1,Chloe Riviere 1,Etienne Gheeraert 1,Julien Pernot 2

1 Institute Neel - CRNS Grenoble Grenoble France,1 Institute Neel - CRNS Grenoble Grenoble France,2 Institut Universitaire de France Paris France

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9:30 AM - EP15.8.04
Reduction of Contact Resistance in Hydrogen-Terminated Diamond FETs by Surface Chemical Doping

Takuya Usami 2,Hirotaka Nagura 2,Shigeru Kishimoto 2,Yutaka Ohno 1

2 Department of Quantum Engineering Nagoya University Nagoya Japan,1 Institute of Materials and Systems for Sustainability Nagoya University Nagoya Japan

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9:45 AM - EP15.8.05
Plasma Enhanced ALD of Al2O3 Dielectric Layers on Hydrogen-Terminated Diamond: Controlling Surface Conductivity

Yu Yang 1,Franz Koeck 1,Maitreya Dutta 1,Srabanti Chowdhury 1,Robert Nemanich 1

1 Arizona State University Tempe United States,

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10:00 AM -
BREAK

EP15.9: Junction Device II
Session Chairs
Satoshi Koizumi
Robert J. Nemanich
Thursday AM, March 31, 2016
PCC North, 100 Level, Room 128 A

10:30 AM - *EP15.9.01
High Purity and High Quality Homoepitaxial Diamond Growth for Power Device Applications

Tokuyuki Teraji 1

1 NIMS Tsukuba Japan,

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11:00 AM - *EP15.9.02
Diamond Junction Field-Effect Transistors for Low-Loss Power Electronics

Takayuki Iwasaki 3,Mutsuko Hatano 3

1 Tokyo Inst of Technology Tokyo Japan,2 CREST Tokyo Japan,3 ALCA Tokyo Japan,

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11:30 AM - EP15.9.03
Bipolar Diamond Diodes Based on pn and pin Junctions for Power Electronic Devices

Toshiharu Makino 2,Hiromitsu Kato 2,Daisuke Takeuchi 2,Masahiko Ogura 2,Daisuke Kuwabara 3,Satoshi Yamasaki 3

1 ADPERC AIST Tsukuba Japan,2 CREST JST Tsukuba Japan,1 ADPERC AIST Tsukuba Japan,2 CREST JST Tsukuba Japan,3 University of Tsukuba Tsukuba Japan

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