S16 Landing Banner 1400x275

Symposium EP6 : Integration of Heterovalent Semiconductors and Devices

2016-03-29   Show All Abstracts

Symposium Organizers

Yong-Hang Zhang, Arizona State University
Jacek Furdyna, University of Notre Dame
Henri Mariette, Institut Néel-CNRS
Maria Tamargo, The City College of New York
EP6.1: Heterovalent II-VI/III-V Semiconductor Integration I
Session Chairs
Isaac Hernandez-Calderon
Sergey Ivanov
Tuesday PM, March 29, 2016
PCC North, 200 Level, Room 228 B

1:30 PM - *EP6.1.01
First-Principles Study of Stability and Band Alignment of Lattice-Matched II-VI/III-V Semiconductor Interfaces

Su-Huai Wei 2

1 Beijing Computational Science Research Center Beijing China,2 Microsystem and Terahertz Research Center Chengdu China,

Show Abstract

2:00 PM - EP6.1.02
Band Alignment of Hydrogen-Plasma Cleaned MBE CdTe on InSb (001)

Xingye Wang 1,Calli Campbell 1,Yong-Hang Zhang 1,Robert Nemanich 1

1 Arizona State Univ Tempe United States,

Show Abstract

2:15 PM - EP6.1.03
Band Engineered Coherent “Hetero-crystalline” Bi2Se3/II-VI Heterostructures

Thor Garcia 2,Zhiyi Chen 2,Lia Krusin 3,Maria Tamargo 1

1 Department of Chemistry The City College of New York New York United States,2 The Graduate Center of CUNY New York United States,3 Department of Physics The City College of New York New York United States,2 The Graduate Center of CUNY New York United States3 Department of Physics The City College of New York New York United States1 Department of Chemistry The City College of New York New York United States

Show Abstract

2:30 PM - *EP6.1.04
6.1Å III-V/II-VI Heterovalent Structures for Optoelectronics and Spintronics

Sergey Ivanov 1,Sergey Sorokin 1,Yakov Terent'ev 1,Victor Solov'ev 1,Alexey Semenov 1,Alexey Toropov 1

1 Ioffe Institute St.Petersburg Russian Federation,

Show Abstract

3:00 PM -
BREAK

3:30 PM - *EP6.1.05
Characterization of Heterovalent Semiconductor Interfaces Using Aberration-Corrected Scanning Transmission Electron Microscopy

David Smith 1,Toshihiro Aoki 1,Jing Lu 1,Martha McCartney 1

1 Arizona State Univ Tempe United States,

Show Abstract

4:00 PM - *EP6.1.06
II-VI/III-V Heterostructure Integration

Thomas Myers 1

1 Texas State Univ San Marcos United States,

Show Abstract

4:30 PM - EP6.1.07
Material and Interface Properties of an Optically-Addressed Visible/MWIR Two-Color Photodetector Based on Monolithically-Integrated CdTe nBn and InSb PIN Device Structures

Zhao-Yu He 1,Jacob Becker 1,Calli Campbell 1,Ying-shen Kuo 1,Maxwell Lassise 1,Shi Liu 1,Zhi-Yuan Lin 1,Yong-Hang Zhang 1

1 Arizona State University Tempe United States,

Show Abstract

EP6.2: Poster Session
Session Chairs
Tuesday PM, March 29, 2016
Sheraton, Third Level, Phoenix Ballroom

8:00 PM - EP6.2.01
GaN Nanowire Arrays by a Patterned Metal-Assisted Chemical Etching

Guodong Yuan 1,Kechao Wang 1,Ruiwei Wu 1,Jinmin Li 1

1 Research and Development Center for Solid State Lighting, Institute of Semiconductors Chinese Academy of Sciences Beijing China,

Show Abstract

8:00 PM - EP6.2.02
High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics and Surface Passivation

Lifan Shen 1,Sen Po Yip 1,Dapan Li 1,Edwin Pun 1,Johnny Ho 1

1 City Univ of Hong Kong Hong Kong Hong Kong,

Show Abstract

8:00 PM - EP6.2.03
High Hole Mobility of GaSb Nanowires for Next-generation Nanoelectronics

Zaixing Yang 1,Dapan Li 1,Sen Po Yip 1,Xiaoguang Liang 1,Johnny Ho 1

1 City Univ of Hong Kong Hong Kong Hong Kong,

Show Abstract

8:00 PM - EP6.2.04
Fabrication and Energy Band Diagram of Al2O3/AlGaN/GaN MOS Capacitors

Min-Woo Ha 1,You Jin Jo 2,Kangmin Choi 1,Tae Joo Park 2

1 Department of Electrical Engineering Myongji University Yongin Korea (the Republic of),2 Department of Materials Science amp; Engineering Hanyang University Ansan Korea (the Republic of)

Show Abstract

8:00 PM - EP6.2.05
Thermal Deactivation of Tellurium Doping in In.53Ga.47As Grown by MOCVD

Ethan Kennon 1,Tommaso Orzali 2,Yan Xin 3,Henry Aldridge 1,Klaus Vollmer 1,Van Truong 1,Aaron Lind 1,Caleb Barrett 1,Kevin Jones 1

1 University of Florida Gainesville United States,2 Sematech New York City United States3 Florida State University Tallahassee United States

Show Abstract

8:00 PM - EP6.2.06
Lateral Epitaxial Overgrowth of High Quality AlN on Patterned h-BN Using Metal Organic Chemical Vapor Deposition

Cuong Tran 2

1 School of Semiconductor and Chemical Engineering Jeonju Korea (the Republic of),2 Solid State Physics University of Science, Vietnam National University Ho Chi Minh City Ho Chi Minh City Viet Nam,

Show Abstract

8:00 PM - EP6.2.07
Variation of Vertical Direction Breakdown Voltage of the AlGaN/GaN HEMTs on AlN/Si Template Substrate as a Function of the Growth Temperature of the Initial Al Layer

Yuya Yamaoka 2,Kazuhiro Ito 2,Takashi Egawa 2,Akinori Ubukata 1,Toshiya Tabuchi 1,Koh Mastumoto 1

1 Taiyo Nippon Sanso Corp. Tsukuba City Japan,2 Nagoya Institute of Technology Nagoya city Japan,2 Nagoya Institute of Technology Nagoya city Japan1 Taiyo Nippon Sanso Corp. Tsukuba City Japan

Show Abstract

8:00 PM - EP6.2.08
Migration Enhanced Molecular Beam Epitaxy Growth of Heterovalent Systems for High Speed Electronic Device Applications

Maxwell Lassise 2,Ernesto Suarez 2,Xinhao Zhao 3,Brian Tracy 4,Calli Campbell 3,David Smith 4,Yong-Hang Zhang 2

1 Center for Photonics Innovation Arizona State University Tempe United States,2 School of Electrical, Computer, and Energy Engineering Arizona State University Tempe United States,1 Center for Photonics Innovation Arizona State University Tempe United States,3 School for Engineering of Matter, Transport, and Energy Arizona State University Tempe United States1 Center for Photonics Innovation Arizona State University Tempe United States,4 Department of Physics Arizona State University Tempe United States

Show Abstract

8:00 PM - EP6.2.09
Optoelectronic and Stability Studies of CdTe/MgxCd1-xTe Double Heterostructures Featuring Barrier Layers with over 46% Mg Composition Grown by Molecular Beam Epitaxy on InSb(001) Substrates

Calli Campbell 3,Yuan Zhao 2,Xinhao Zhao 3,Xingye Wang 3,Maxwell Lassise 1,Shi Liu 1,Ernesto Suarez 1,Robert Nemanich 4,Yong-Hang Zhang 1

2 Center for Photonics Innovation Arizona State University Tempe United States,3 School for Engineering of Matter, Transport and Energy Arizona State University Tempe United States,1 School of Electrical, Computer and Energy Engineering Arizona State University Tempe United States,2 Center for Photonics Innovation Arizona State University Tempe United States3 School for Engineering of Matter, Transport and Energy Arizona State University Tempe United States2 Center for Photonics Innovation Arizona State University Tempe United States,1 School of Electrical, Computer and Energy Engineering Arizona State University Tempe United States4 Department of Physics Arizona State University Tempe United States

Show Abstract

2016-03-30   Show All Abstracts

Symposium Organizers

Yong-Hang Zhang, Arizona State University
Jacek Furdyna, University of Notre Dame
Henri Mariette, Institut Néel-CNRS
Maria Tamargo, The City College of New York
EP6.3: Heterovalent II-VI/III-V Semiconductor Integration II
Session Chairs
David Smith
Wednesday AM, March 30, 2016
PCC North, 200 Level, Room 228 B

8:30 AM - *EP6.3.01
Low Temperature Metalorganic Chemical Vapor Deposition of Semiconductor Thin Films for Surface Passivation of Photovoltaic Devices

Ishwara Bhat 1

1 Rensselaer Polytechnic Institute Troy United States,

Show Abstract

9:00 AM - *EP6.3.02
CdSe/ZnSe Ultra-Thin Quantum Wells on GaAs(001) for Photovoltaic Applications

Isaac Hernandez-Calderon 1

1 Physics Department - Cinvestav Mexico City, DF Mexico,

Show Abstract

9:30 AM - EP6.3.03
Heterovalent Interface GaAs/ZnSe: Effect of MBE Growth and Annealing on Chemical and Physical Properties

Tatiana Komissarova 1,Mikhail Lebedev 1,Sergey Sorokin 1,Irina Sedova 1,Grigorii Klimko 1,Sergey Gronin 1,Wolfram Calvet 2,Evgenii Evropeytsev 1,Kirill Komissarov 1,Alla Sitnikova 1,Mikhail Drozdov 3,Sergey Ivanov 1

1 Ioffe Institute St. Petersburg Russian Federation,2 Helmholtz-Zentrum Berlin (HZB) Berlin Germany3 Institute for Physics of Microstructures RAS Nizhny Novgorod Russian Federation

Show Abstract

9:45 AM - EP6.3.04
Optical Properties of Strain-Balanced InAs/InAsSb Superlattices Grown With and Without Bi as a Surfactant

Preston Webster 2,Jing Lu 2,David Smith 2,Yong-Hang Zhang 2,Shane Johnson 2

1 Arizona State University Tempe United States,2 Center for Photonics Innovation Tempe United States,

Show Abstract

10:00 AM -
BREAK

EP6.4: III-Nitride/Si Integration
Session Chairs
Ishwara Bhat
Wednesday AM, March 30, 2016
PCC North, 200 Level, Room 228 B

10:30 AM - *EP6.4.01
Transmission Electron Microscopy Investigation of the Microstructure of Group III-N Nanowires and Their Interfaces with Si Substrates

Esperanza Luna 1,Javier Grandal 2,Miguel Angel Sanchez-Garcia 2,Enrique Calleja 2,Achim Trampert 1

1 Paul-Drude-Institute Berlin Germany,2 Universidad Politécnica de Madrid Madrid Spain

Show Abstract

11:00 AM - EP6.4.02
Low-Temperature Template-Assisted Fabrication of Hollow GaN Nano-Cylinders on Si Substrates

Ali Haider 2,Sevde Altuntas 3,Mehmet Yilmaz 1,Petro Deminskyi 4,Ibrahim Yilmaz 5,Fatih Buyukserin 3,Necmi Biyikli 2

1 National Nanotechnology Research Center Bilkent University Ankara Turkey,2 Institute of Materials Science and Nanotechnology Bilkent University Ankara Turkey,3 TOBB University Ankara Turkey1 National Nanotechnology Research Center Bilkent University Ankara Turkey1 National Nanotechnology Research Center Bilkent University Ankara Turkey,4 Institute of Microdevices, Photonics Department National Academy of Sciences of Ukraine Kiev Ukraine5 Turgut Özal University Ankara Turkey

Show Abstract

11:15 AM - EP6.4.03
Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals

Fabio Isa 1,Marco Salvalaglio 2,Yadira Dasilva 3,Mojmir Meduna 5,Michael Barget 2,Arik Jung 1,Thomas Kreiliger 1,Giovanni Isella 6,Rolf Erni 3,Fabio Pezzoli 2,Emiliano Bonera 2,Philippe Niedermann 7,Kai Zweiacker 8,Antonia Neels 8,Alex Dommann 8,Pierangelo Gröning 3,Francesco Montalenti 2,Hans von Kaenel 1

1 Laboratory for Solid State Physics ETH Zurich Zurich Switzerland,2 Materials Science L-NESS and Università di Milano-Bicocca Milano Italy3 Electron Microscopy Center EMPA Dübendorf Switzerland4 Condensed Matter Physics Masaryk University Brno Czech Republic,5 CEITEC Masaryk University Brno Czech Republic6 Physics L-NESS and Politecnico di Milano Como Italy7 CSEM Neuchatel Switzerland8 Center for X-Ray Analytics EMPA Dübendorf Switzerland

Show Abstract

11:30 AM - EP6.4.04
Growth and Strain Engineering of Ge Nanowires in an InAlAs Host by Spontaneous Phase Separation

Daehwan Jung 1,Joseph Faucher 1,Austin Akey 2,Samik Mukherjee 3,Matthew Cabral 4,Xiahan Sang 4,Daniel Ironside 5,Seth Bank 5,James LeBeau 4,Oussama Moutanabbir 3,Tonio Buonassisi 2,Minjoo Lee 1

1 Yale University New Haven United States,2 MIT Cambridge United States3 Polytechnique Montreal Montreal Canada4 North Carolina State University Raleigh United States5 University of Texas at Austin Austin United States

Show Abstract

11:45 AM - EP6.4.05
Transforming Common III-V and II-VI Semiconductor Compounds into Topological Heterostructures: The Case of CdTe/InSb Superlattices

Qihang Liu 1,Xiuwen Zhang 1,L. B. Abdalla 1,Alex Zunger 1

1 University of Colorado-Boulder Boulder United States,

Show Abstract

EP6.5: Heterovalent Integration on Si for Device Application
Session Chairs
Thomas Myers
Wednesday PM, March 30, 2016
PCC North, 200 Level, Room 228 B

1:30 PM - *EP6.5.01
II-VI Material Integration with Silicon for Detector and PV Applications

Sivalingam Sivananthan 1,Timothy Gessert 2

1 Univ of Illinois-Chicago Chicago United States,2 National Renewable Energy Laboratory Golden United States

Show Abstract

2:00 PM - *EP6.5.02
Enabling High-Efficiency III-V/Si Tandem Cells through Dislocation Engineering

Minjoo Lee 1,Kevin Nay Yaung 1,Joseph Faucher 1,Jordan Lang 1

1 Yale Univ New Haven United States,

Show Abstract

2:30 PM - EP6.5.03
Ultrafast and Valence Sub-Band Dependent Auger Recombination in InGaN Quantum Wells

Kristopher Williams 1,Nicholas Monahan 1,Daniel Koleske 2,Mary Crawford 2,Xiaoyang Zhu 1

1 Columbia University New York United States,2 Sandia National Laboratories Albuquerque United States

Show Abstract

2:45 PM - EP6.5.04
InGaN-Based Strained Quantum Well Laser with Etched Structure Analized by X-Ray Diffaction and Fluorescence of Indium Using High-Resolution Micro-Beam

Toshiya Yokogawa 1,Yasuhiko Imai 2,Shigeru Kimura 2

1 Yamaguchi University Ube Japan,2 JASRI Hyogo Japan

Show Abstract

3:00 PM -
BREAK

EP6.6: II-VI/IV-VI Semiconductor and Oxide/Semiconductor Integration
Session Chairs
Minjoo Lee
Wednesday PM, March 30, 2016
PCC North, 200 Level, Room 228 B

3:30 PM - *EP6.6.01
Two Dimensional Electron Gas in CdTe/PbTe Heterojunction

Huizhen Wu 1,Yong Zhang 2

1 Department of Physics and State Key Laboratory for Silicon Materials Zhejiang University Hangzhou China,2 Department of Electrical Engineering University of North Carolina at Charlotte Charlotte United States

Show Abstract

4:00 PM - EP6.6.02
Epitaxial Integration of Ni/VO2 Heterostructures on Si (001)

Srinivasa Rao Singamaneni 1,Gabrielle Foley 1,John Prater 1,Jagdish Narayan 1

1 North Carolina State Univ Raleigh United States,

Show Abstract

4:15 PM - EP6.6.04
Insight into Group V Dopant Incorporation in Polycrystalline CdTe via 3-D TOF-SIMS Tomography

Steven Harvey 1,Eric Colegrove 1,Ji-Hui Yang 1,Su-Huai Wei 2,Wyatt Metzger 1

1 National Renewable Energy Lab Golden United States,2 Beijing Computational Science Research Center Beijing China

Show Abstract