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Symposium MD4 : Phase-Change Materials and Applications

2016-03-29   Show All Abstracts

Symposium Organizers

Riccardo Mazzarello, RWTH Aachen University
Anbarasu Manivannan, Indian Institute of Technology Indore
Yuta Saito, National Institute of Advanced Industrial Science and Technology
Robert Simpson, Singapore University of Technology and Design
MD4.1: Structure and Stability
Session Chairs
Jean-Yves Raty
Tuesday PM, March 29, 2016
PCC West, 100 Level, Room 102 C

1:30 PM - *MD4.1.01
Liquid and Amorphous Phase Change Materials

Marie-Vanessa Coulet 1

1 MADIREL - CNRS and Aix Marseille Université Marseille Cedex 20 France,

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2:00 PM - MD4.1.02
Structural Units in GeTe and Ge2Sb2Te5 Phase-Change Memory Materials: New Insights from First-Principles Computer Modeling

Taehoon Lee 1,Stephen Elliott 1

1 Chemistry Univ of Cambridge Cambridge United Kingdom,

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2:15 PM - MD4.1.03
Predicting the Shape of GeTe Nanocrystals from First Principles

Philipp Konze 1,Richard Dronskowski 2

1 Institute of Inorganic Chemistry RWTH Aachen Aachen Germany,1 Institute of Inorganic Chemistry RWTH Aachen Aachen Germany,2 Juelich−Aachen Research Alliance (JARA-HPC) Aachen Germany

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2:30 PM - MD4.1.04
Lattice Dynamics and Related Properties of Chalcogenide Materials from First Principles

Ralf Stoffel 1,Richard Dronskowski 1

1 Institute of Inorganic Chemistry RWTH Aachen University Aachen Germany,

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2:45 PM -
BREAK

MD4.2: Structure—Property Correlations
Session Chairs
Raffaella Calarco
Tuesday PM, March 29, 2016
PCC West, 100 Level, Room 102 C

3:15 PM - *MD4.2.01
Direct Atomic Structure Imaging of Rocksalt GeSbTe as an Anderson Insulator

Wei Zhang 2,Bin Zhang 3,Yongjin Chen 3,Matthias Wuttig 2,Riccardo Mazzarello 2,Evan Ma 1,Xiaodong Han 3

1 Xi'an Jiaotong University Xi'an China,2 RWTH Aachen University Aachen Germany,3 Beijing University of Technology Beijing China2 RWTH Aachen University Aachen Germany4 Johns Hopkins University Baltimore United States,1 Xi'an Jiaotong University Xi'an China

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3:45 PM - MD4.2.02
STEM Characterization of GeSbTe Crystalline Structures in Thin Films

Antonio Mio 1,Stefania Privitera 1,Valeria Bragaglia 2,Fabrizio Arciprete 3,Raffaella Calarco 2,Emanuele Rimini 4

1 IMM-CNR, Istituto per la Microelettronica e Microsistemi - Consiglio Nazionale delle Ricerche Catania Italy,2 Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz Berlin Germany3 Dipartimento di Fisica, Università di Roma “Tor Vergata” Rome Italy1 IMM-CNR, Istituto per la Microelettronica e Microsistemi - Consiglio Nazionale delle Ricerche Catania Italy,4 Dipartimento di Fisica e Astronomia, Università degli Studi di Catania Catania Italy

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4:00 PM - *MD4.2.03
Phase Transitions in Ge-Sb-Te Alloys Induced by Ion Irradiations

Stefania Privitera 1,Antonio Mio 1,Julia Benke 2,Christoph Persch 2,Emanuele Rimini 3

1 Institute for Microelectronic and Microsystems National Research Council Catania Italy,2 Physikalisches Institut (IA) and JARA-FIT RWTH Aachen University Aachen Germany1 Institute for Microelectronic and Microsystems National Research Council Catania Italy,3 University of Catania Catania Italy

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4:30 PM - MD4.2.04
Stoichiometry-Controlled Metal-Insulator Transitions in Crystalline Phase-Change Materials

Riccardo Mazzarello 2,Wei Zhang 4,Matthias Wuttig 2

1 Institute for Theoretical Solid State Physics RWTH Aachen Aachen Germany,2 JARA RWTH Aachen University Aachen Germany,3 Institute of Physics (IA) RWTH Aachen University Aachen Germany,4 Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials Xi’an Jiaotong University Xi'an China3 Institute of Physics (IA) RWTH Aachen University Aachen Germany,2 JARA RWTH Aachen University Aachen Germany

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4:45 PM - MD4.2.05
Designing New Phase Change Materials via Stoichiometry

Matthias Wuttig 1,Stefan Jakobs 1,Alexander von Hoegen 1

1 RWTH Aachen Aachen Germany,

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MD4.3: Poster Session
Session Chairs
Tuesday PM, March 29, 2016
Sheraton, Third Level, Phoenix Ballroom

8:00 PM - MD4.3.01
Electromigration Behaviors of Ge2Sb2Te5 Chalcogenide Srtips under Pulse Bias

Yin-Hsien Huang 1,Tsung-Eong Hsieh 1,Bing-Chien Wu 1

1 National Chiao Tung University Hsinchu Taiwan,

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8:00 PM - MD4.3.02
Synthesis of Single-Crystalline Chalcogenide Nanowire by Vapor-Liquid-Solid Process

Chi-Jui Yeh 1,Sz-Fan Chen 1,Tsung-Eong Hsieh 1

1 Materials Science and Engineering National Chiao Tung University Hsinchu Taiwan,

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8:00 PM - MD4.3.03
Nucleation in Confined High Aspect Ratio Thin Films

James Mastandrea 1,Daryl Chrzan 1

2 Materials Science amp; Engineering University of California, Berkeley Berkeley United States,1 Lawrence Berkeley National Laboratory Berkeley United States,

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8:00 PM - MD4.3.05
THz Spectroscopy Study and THz Applications of Interfacial Phase Change Memory Material

Yuta Saito 2,Kotaro Makino 2,Paul Fons 2,Shota Kuromiya 3,Keisuke Takano 3,Makoto Nakajima 3,Hitoshi Iida 2,Moto Kinoshita 2,Junji Tominaga 2,Takashi Nakano 2

1 NRI AIST Tsukuba Japan,2 CREST-JST Kawaguchi Japan,3 ILE Osaka University Suita Japan4 NMJI AIST Tsukuba Japan,2 CREST-JST Kawaguchi Japan

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8:00 PM - MD4.3.06
Phase Transitions in Complex Oxide Thin Films with Elemental Vacancies

Sang A Lee 2,Seokjae Oh 1,Hoidong Jeong 1,Sungmin Woo 1,Jae-Yeol Hwang 3,Minseok Choi 4,Si-Young Choi 4,Suyoun Lee 5,Seulki Roh 1,Young-Hoon Oh 1,Jong-Seong Bae 6,Sungkyun Park 7,Jungseek Hwang 1,Won Nam Kang 1,Sung Wng Kim 3,Woo Seok Choi 1

1 Department of Physics Sungkyunkwan university Suwon Korea (the Republic of),2 Insitute of Basic Science Sungkyunkwan University Suwon Korea (the Republic of),1 Department of Physics Sungkyunkwan university Suwon Korea (the Republic of)3 Center for Integrated Nanostructure Physics Institute for Basic Science (IBS) Sungkyunkwan University Suwon Korea (the Republic of)4 Materials Modeling and Characterization Department Korea Institute of Materials Science Changwon Korea (the Republic of)5 Electronic Materials Research Center Korea Institute of Science and Technology Seoul Korea (the Republic of)6 Busan Center Korea Basic Science Institute Busan Korea (the Republic of)7 Department of Physics Pusan National University Busan Korea (the Republic of)8 Department of Energy Sciences Sungkyunkwan University Suwon Korea (the Republic of),3 Center for Integrated Nanostructure Physics Institute for Basic Science (IBS) Sungkyunkwan University Suwon Korea (the Republic of)

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8:00 PM - MD4.3.07
Comparison of Vanadium Oxide Thin Films Prepared Using Femtosecond and Nanosecond Pulsed Laser Deposition

Ying Deng 2,Anthony Pelton 1,Robert Mayanovic 1

1 Missouri State University Springfield United States,2 US Photonics Inc Springfield United States,1 Missouri State University Springfield United States

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8:00 PM - MD4.3.08
Optical, Electronic, and Thermal Stability of Bulk ST12 Ge

Haidong Zhang 1,Zhisheng Zhao 2,Duck Kim 1,Timothy Strobel 1

1 Geophysical Laboratory, Carnegie Institution of Washington Washington United States,1 Geophysical Laboratory, Carnegie Institution of Washington Washington United States,2 State Key Laboratory of Metastable Materials Science and Technology Yanshan University Qinhuangdao China

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8:00 PM - MD4.3.09
A Zero Density Change Phase Change Memory Material: GeTe-O Structural Characteristics upon Crystallisation

Xilin Zhou 1,Weiling Dong 1,Jitendra Behera 1,Robert Simpson 1

1 Singapore University of Technology and Design Singapore Singapore,

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2016-03-30   Show All Abstracts

Symposium Organizers

Riccardo Mazzarello, RWTH Aachen University
Anbarasu Manivannan, Indian Institute of Technology Indore
Yuta Saito, National Institute of Advanced Industrial Science and Technology
Robert Simpson, Singapore University of Technology and Design
MD4.4: Crystallization Kinetics
Session Chairs
Riccardo Mazzarello
Wednesday AM, March 30, 2016
PCC West, 100 Level, Room 102 C

8:15 AM - *MD4.4.01
The Kinetic Fragility of Phase-Change Chalcogenide Liquids

A. Lindsay Greer 2

1 Univ of Cambridge Cambridge United Kingdom,2 WPI-AIMR Tohoku University Sendai Japan,

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8:45 AM - MD4.4.02
A Fragile-to-Strong Liquid Transition in Ge15Te85 and Phenomenological Analogy between Phase-Change Materials and Water

Shuai Wei 2,Pierre Lucas 2,C. Austen Angell 1

1 School of Molecular Sciences Arizona State University Tempe United States,2 Materials Science and Engineering University of Arizona Tucson United States,2 Materials Science and Engineering University of Arizona Tucson United States1 School of Molecular Sciences Arizona State University Tempe United States

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9:00 AM - MD4.4.03
Control of the Crystallization Mechanism of Phase Change Materials

Pierre Noe 1,Chiara Sabbione 1,Niccolo Castellani 1,Nicolas Bernier 1,Frederic Fillot 1,Christophe Licitra 1,Francoise Hippert 2

1 CEA-LETI Minatec Campus Grenoble France,2 LNCMI CNRS Grenoble France

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9:15 AM - *MD4.4.04
Glass Formation and Crystallization Dynamics of Phase-Change Materials Probed by Time Resolved X-Ray Scattering and Optical Reflectance

Peter Zalden 4,Florian Quirin 1,Klaus Sokolowski-Tinten 1,Alexander von Hoegen 2,Matthias Wuttig 3,Aaron Lindenberg 6

7 University of Hamburg CUI Center for Ultrafast Imaging Hamburg Germany,4 Stanford Institute for Materials and Energy SLAC National Accelerator Laboratory Menlo Park United States,1 Faculty of Physics Universität Duisburg Essen Duisburg Germany2 I. Institute of Physics RWTH Aachen University Aachen Germany2 I. Institute of Physics RWTH Aachen University Aachen Germany,3 JARA - Fundamentals of Information Technology RWTH Aachen University Aachen Germany4 Stanford Institute for Materials and Energy SLAC National Accelerator Laboratory Menlo Park United States,5 PULSE Institute SLAC National Accelerator Laboratory Menlo Park United States,6 Department of Materials Science and Engineering Stanford University Stanford United States

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9:45 AM -
BREAK

MD4.5: Resistance Drift, Switching and Failure
Session Chairs
Huai-Yu Cheng
Wednesday AM, March 30, 2016
PCC West, 100 Level, Room 102 C

10:15 AM - *MD4.5.01
I-V Drift in Phase-Change Memory Devices

Manuel Le Gallo 1,Daniel Krebs 1,Abu Sebastian 1

1 IBM Research - Zurich Rüschlikon Switzerland,

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10:45 AM - MD4.5.02
A Systematic Study on Electrical Switching Characteristics of InSbTe Phase Change Material for Multi-Bit Data Storage

Shivendra Kumar Pandey 1,Anbarasu Manivannan 2

1 Discipline of Electrical Engineering Indian Institute of Technology Indore Indore India,1 Discipline of Electrical Engineering Indian Institute of Technology Indore Indore India,2 Materials Science and Engineering Indian Institute of Technology Indore Indore India

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11:00 AM - MD4.5.03
In Situ TEM Study of Electrical Wind Force-Driven Amorphization in Phase-Change Materials

Sung-Wook Nam 2,Jeong Yong Lee 3

1 Institute for Basic Science (IBS) Daejeon Korea (the Republic of),2 University of Pennsylvania Philadelphia United States,1 Institute for Basic Science (IBS) Daejeon Korea (the Republic of),3 Korea Advanced Institute of Science and Technology (KAIST) Daejeon Korea (the Republic of)

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11:15 AM - *MD4.5.04
Migration of Elements in Phase Change Memory (PCM)

Mattia Boniardi 1,Luca Crespi 2

1 Micron Semiconductor Italia Vimercate (MB) Italy,2 Dipartimento di Elettronica, Informazione e Bioingegneria (DEIB) Politecnico di Milano, Piazza L. Da Vinci Milano Italy

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MD4.6: Devices
Session Chairs
Anbarasu Manivannan
Wednesday PM, March 30, 2016
PCC West, 100 Level, Room 102 C

1:30 PM - *MD4.6.01
Materials Engineering for Phase Change Memory

Huai-Yu Cheng 2

1 IBM/Macronix PCRAM Joint Project Yorktown Heights United States,2 Macronix International Co Ltd Yorktown Heights United States,

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2:00 PM - MD4.6.02
Imaging of Phase Change Materials below a Capping Layer Using Correlative Infrared Near-Field Microscopy and Electron Microscopy

Martin Lewin 1,Benedikt Hauer 1,Manuel Bornhoefft 1,Lena Jung 1,Julia Benke 1,Ann-Katrin Michel 1,Joachim Mayer 1,Thomas Taubner 1,Matthias Wuttig 1

1 RWTH Aachen Univ Aachen Germany,

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2:15 PM - *MD4.6.03
Phase-Change Memory-Based Crossbar Arrays for Non-Von Neumann Computing

Pritish Narayanan 1,Geoffrey Burr 1,Robert Shelby 1

1 IBM Research - Almaden San Jose United States,

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2:45 PM -
BREAK

MD4.7: Novel Materials
Session Chairs
Bart Kooi
Wednesday PM, March 30, 2016
PCC West, 100 Level, Room 102 C

3:15 PM - MD4.7.01
MOCVD Self-Assembly of Ultra-Thin In-Sb-Te Nanowires for Scaled Phase Change Memories

Massimo Longo 1,Stefano Cecchi 1,Raimondo Cecchini 1,Simone Selmo 2,Claudia Wiemer 1,Marco Fanciulli 2,Enzo Rotunno 3,Laura Lazzarini 3,Brendan Sheehan 4,Scott Monaghan 4,Karim Cherkaoui 4,Paul Hurley 4,Lorenzo Caccamo 6,Andreas Waag 6

1 Laboratorio MDM IMM-CNR Agrate Brianza Italy,1 Laboratorio MDM IMM-CNR Agrate Brianza Italy,2 Dipartimento di Scienza dei Materiali University of Milano Bicocca Milano Italy3 IMEM-CNR Parma Italy4 Nano Electronic Materials and Devices Tyndall National Institute University College Cork Cork Ireland5 Institut fur Halbleitertechnik Technische Universitat Braunschweig Braunschweig Germany,6 Laboratory for Emerging Nanometrology TU Braunschweig Braunschweig Germany

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3:30 PM - MD4.7.02
Au-Catalyzed Ordered Synthesis and Characterization of In-Ge-Te Nanowires by MOCVD

Raimondo Cecchini 1,Simone Selmo 2,Claudia Wiemer 1,Marco Fanciulli 2,Enzo Rotunno 3,Laura Lazzarini 3,Lorenzo Caccamo 5,Andreas Waag 5,Brendan Sheehan 6,Scott Monaghan 6,Karim Cherkaoui 6,Paul Hurley 6,Massimo Longo 1

1 Laboratorio MDM, IMM-CNR, Unita di Agrate Brianza Agrate Brianza (MB) Italy,1 Laboratorio MDM, IMM-CNR, Unita di Agrate Brianza Agrate Brianza (MB) Italy,2 Dipartimento di Scienza dei Materiali University of Milano Bicocca Milan Italy3 IMEM-CNR Parma Italy4 Institut für Halbleitertechnik Technische Universität Braunschweig Braunschweig Germany,5 Laboratory for Emerging Nanometrology TU Braunschweig Braunschweig Germany6 Tyndall National Institute University College Cork Cork Ireland

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3:45 PM - MD4.7.03
Performance Improvement on In3SbTe2 Phase-Change Material by Bi Doping with Vacancy and Distortion

Minho Choi 1,Heechae Choi 2,Seungchul Kim 2,Yong Tae Kim 2,Jinho Ahn 1

1 Hanyang University Seoul Korea (the Republic of),2 Korea Institute of Science and Technology Seoul Korea (the Republic of)

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4:00 PM - MD4.7.04
Role of Photostriction in Tailoring the Photoinduced Phase-Change in Amorphous Selenium Nano-Structures

Sivakumar Gayathri 1,Sundarrajan Asokan 3

1 Dept. of Instrumentation and Applied Physics Indian Institute of Science Bangalore India,1 Dept. of Instrumentation and Applied Physics Indian Institute of Science Bangalore India,2 Applied Photonics Initiative Indian Institute of Science Bangalore India,3 Robert Bosch Centre for Cyber Physical Systems Indian Institute of Science Bangalore India

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4:15 PM - MD4.7.05
Phase-Change Induced Contact Resistance Changes of GeCu2Te3/metal Contacts Due to Phase Transitions

Satoshi Shindo 1,Yuji Sutou 1,Daisuke Ando 1,Junichi Koike 1,Yuta Saito 2,Yunheub Song 3

1 Tohoku Univ Sendai Japan,2 AIST Tsukuba Japan3 Hanyang Univ. Seoul Korea (the Republic of)

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2016-03-31   Show All Abstracts

Symposium Organizers

Riccardo Mazzarello, RWTH Aachen University
Anbarasu Manivannan, Indian Institute of Technology Indore
Yuta Saito, National Institute of Advanced Industrial Science and Technology
Robert Simpson, Singapore University of Technology and Design
MD4.8: Superlattice Materials
Session Chairs
Paul Fons
Yuta Saito
Thursday AM, March 31, 2016
PCC West, 100 Level, Room 102 C

8:30 AM - *MD4.8.01
Sub-Picosecond and Sub-Nanometer Resolution Measurements of Atomic Motion during Electronic Excitation in Epitaxial Ge2Sb2Te5

Paul Fons 6,Kirill Mitrofanov 6,Kotaro Makino 1,Ryo Terashima 3,Toru Shimada 4,Alexander Kolobov 1,Valeria Bragaglia 5,Alessandro Giussani 5,Raffaella Calarco 5,Henning Riechert 5,Takahiro Sato 6,Tetsuo Katayama 6,Kanade Ogawa 6,Tadashi Togashi 6,Makina Yabashi 6,Simon Wall 7,Dale Brewe 8,Muneaki Hase 3

1 Nanoelectronics National Institute for Advanced Industrial Science and Technology Tsukuba, Ibaraki Japan,2 Japan Synchrotron Radiation Research Institute (JASRI) Sayo , Hyogo Japan,6 RIKEN SPring-8 Center Hyogo Japan,1 Nanoelectronics National Institute for Advanced Industrial Science and Technology Tsukuba, Ibaraki Japan,6 RIKEN SPring-8 Center Hyogo Japan1 Nanoelectronics National Institute for Advanced Industrial Science and Technology Tsukuba, Ibaraki Japan3 Division of Applied Physics, Faculty of Pure and Applied Sciences University of Tsukuba Tsukuba Japan4 Department of Science, Faculty of Education Hirosaki University Hirosaki Japan5 Paul-Drude-Institut fur Festkörperelektronik Berlin Germany6 RIKEN SPring-8 Center Hyogo Japan7 ICFO-Institut de Ciències Fotòniques The Barcelona Institute of Science and Technology Barcelona Spain8 X-Ray Science Division Argonne National Laboratory Lemont United States

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9:00 AM - MD4.8.02
Strain Engineered Interfacial Phase Change Materials: Diffusive Atomic Switches in 2D

Xilin Zhou 1,Janne Kalikka 1,Eric Dilcher 3,Ju Li 2,Simon Wall 3,Robert Simpson 1

1 SUTD Singapore Singapore,3 ICFO Spain Spain2 MIT Cambridge United States

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9:15 AM - MD4.8.03
Strain Engineered Sb2Te1–GeTe Superlattice Interfacial Phase Change Memory

Xilin Zhou 1,Janne Kalikka 1,Robert Simpson 1

1 Singapore University of Technology and Design Singapore Singapore,

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9:30 AM - MD4.8.04
Atomic Simulation on the Reconstruction Mechanism of Chalcogenide Superlattice

Xiaoming Yu 1,John Robertson 1

1 University of Cambridge Cambridge United Kingdom,

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9:45 AM -
BREAK

10:15 AM - *MD4.8.05
The Role of Intrinsic Vacancies in Chalcogenide Phase-Change Materials

Zhimei Sun 1

1 Beihang University Beijing China,

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10:45 AM - MD4.8.06
Growth of High-Quality Chalcogenide Superlattice Film and Feasibility Study for Novel Electronic Device

Yuta Saito 2,Leonid Bolotov 2,Noriyuki Miyata 2,Paul Fons 2,Alexander Kolobov 2,Junji Tominaga 2

1 AIST Tsukuba Japan,2 CREST, JST Kawaguchi Japan,

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11:00 AM - MD4.8.07
Atomic Stacking and Van-der-Waals Bonding in GeSbTe Superlattices

Jamo Momand 1,Rui Ning Wang 2,Jos Boschker 2,Marcel Verheijen 3,Raffaella Calarco 2,Bart Kooi 1

1 Univ of Groningen Groningen Netherlands,2 Paul-Drude-Institut für Festkörperelektronik Berlin Germany3 Department of Applied Physics Eindhoven University of Technology Eindhoven Netherlands

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11:15 AM - MD4.8.08
Molecular Beam Epitaxy and Characterization of GeSbTe/Sb2Te3 Superlattices

Stefano Cecchi 1,Eugenio Zallo 1,Jos Boschker 1,Raffaella Calarco 1

1 Paul-Drude-Institut für Festkörperelektronik Berlin Germany,

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11:30 AM - MD4.8.09
The Raman Spectrum and Analysis of Phonon Modes in GeSbTe Based Alloys and Superlattices

Eugenio Zallo 1,Rui Ning Wang 1,Valeria Bragaglia 1,Jos Boschker 1,Raffaella Calarco 1

1 Paul-Drude-Institut für Festkörperelektronik Berlin Germany,

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MD4.9: Photonics
Session Chairs
Robert Simpson
Thursday PM, March 31, 2016
PCC West, 100 Level, Room 102 C

1:30 PM - *MD4.9.01
Switchable Infrared Nanophotonic Elements Enabled by Phase-Change Materials

Thomas Taubner 1

1 RWTH Aachen Univ Aachen Germany,

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2:00 PM - MD4.9.02
Achievement of an Ultrafast Beam Steering through Gradient Au-Ge2Sb2Te5 -Au Plasmonic Resonators

Libang Mao 1,Tun Cao 1

1 Dalian University of Technology Dalian China,

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2:15 PM - *MD4.9.03
Active Plasmonics with Phase Change Material for Intelligent Computing Applications

Toshiharu Saiki 1

1 Department of Electronics and Electrical Engineering Keio University Yokohama Japan,

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2:45 PM -
BREAK

MD4.10: Emerging Applications
Session Chairs
Thomas Taubner
Thursday PM, March 31, 2016
PCC West, 100 Level, Room 102 C

3:15 PM - *MD4.10.01
Novel Displays, Smart Windows and Other Optoelectronics Using Phase Change Materials

Peiman Hosseini 2,Carlos Rios 1,Harish Bhaskaran 2

2 Bodle Technologies Limited Oxford United Kingdom,1 Department of Materials University of Oxford Oxford United Kingdom1 Department of Materials University of Oxford Oxford United Kingdom,2 Bodle Technologies Limited Oxford United Kingdom

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3:45 PM - MD4.10.02
Low Resistivity Phase Change Materials for High Performance RF Switches

Matt King 2,Nabil El-Hinnawy 3,Brian Wagner 1,Evan Jones 1,Andy Ezis 1,Pavel Borodulin 1,Colin Furrow 1,Carlos Padilla 1,Michael Lee 1,Doyle Nichols 1,Elizabeth Dickey 2,Jon-Paul Maria 2,Robert Young 1

1 Northrop Grumman Electronic Systems Linthicum United States,2 North Carolina State University Raleigh United States,1 Northrop Grumman Electronic Systems Linthicum United States,3 Carnegie Mellon University Pittsburgh United States1 Northrop Grumman Electronic Systems Linthicum United States2 North Carolina State University Raleigh United States

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4:00 PM - MD4.10.03
Impact of Pre-Metallization Surface Preparation and Metallurgical Reactions on Ohmic Contacts to Germanium Telluride

Haila Aldosari 2,Hamed Simchi 2,Zelong Ding 1,Suzanne Mohney 2

1 Pennsylvania State University University Park United States,2 Materials Research Institute State College United States,1 Pennsylvania State University University Park United States

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4:15 PM - MD4.10.04
Thermal Tuning of Colors Generated by Ultrathin Phase-Change Films on Metal Mirrors

Gokhan Bakan 2,Sencer Ayas 1,Tohir Saidzoda 2,Aykutlu Dana 1

1 Bilkent Univ Ankara Turkey,2 Antalya International University Antalya Turkey,1 Bilkent Univ Ankara Turkey2 Antalya International University Antalya Turkey

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4:30 PM - MD4.10.05
Magnetic Phase Change Materials: A Screened Exchange Hybrid Functional Study

Huanglong Li 1,Ziyang Zhang 1,Luping Shi 1

1 Department of Precision Instrument Tsinghua University Beijing China,

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2016-04-01   Show All Abstracts

Symposium Organizers

Riccardo Mazzarello, RWTH Aachen University
Anbarasu Manivannan, Indian Institute of Technology Indore
Yuta Saito, National Institute of Advanced Industrial Science and Technology
Robert Simpson, Singapore University of Technology and Design
MD4.11: Field-Induced Effects
Session Chairs
Riccardo Mazzarello
Friday AM, April 01, 2016
PCC West, 100 Level, Room 102 C

8:30 AM - *MD4.11.01
Field Induced Transformation in Solid State Memory and Beyond

Victor Karpov 1

1 Univ of Toledo Toledo United States,

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9:00 AM - MD4.11.02
Occupation of Defect States in Amorphous Phase Change Materials - Relevance for the Inter-Trap Distance in Conduction Models

Matthias Kaes 1,Martin Salinga 1

1 RWTH Aachen University Aachen Germany,

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9:15 AM - *MD4.11.03
Low Bias Resistance of Crystalline and Amorphous Phase Change Materials: Application to GeTe

M.P. Anantram 1,Jie Liu 1,Evan Wang 1,Xu Xu 1

1 Univ of Washington Seattle United States,

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