This tutorial will focus on new and innovative technologies and theoretical methods that enable directed placements of individual atoms to build materials, structures, and devices with atomic precision. Experts in the fields of nanotechnology will describe how platforms based on scanning probe and electron microscopes can be used to not only image with atomic resolution, but can also be used to manipulate matter on this scale. As the capabilities to manufacture atom-by-atom continue to improve, many new opportunities emerge to create matter and devices that exhibit novel photonic, electronic, and thermal properties deriving from atomic-scale dynamics of these quantized building blocks. The design of such materials and devices requires a new set of modelling tools to accurately capture for complex dynamic interactions across large time and spatial scales. This tutorial will therefore also include a discussion covering the latest methods for understanding and predicting the behavior of excited state and non-equilibrium phenomena.

1:30 pm – 2:30 pm

Part I: John Randall
Atomic Level Fabrication using Scanning Tunneling Microscopy

Using STM-based Hydrogen Depassivation Lithography (HDL) on Si(100), it is possible to make sub-nm patterns in the monolayer of H on the Si surface via electron stimulated desorption of the H atoms. By applying creep and hysteresis correction and aligning to the Si surface lattice, the technique has become the highest resolution and precision lithography tool available. The H resist is used for selective, atomic-precision, deposition of Si, Ge, TiO2, and dopant atoms currently, and more materials and associate processes are being developed. A major advantage is that HDL is a digital atomic-scale fabrication process and is a scalable process.

2:30 pm – 3:00 pm BREAK     

3:00 pm – 4:00 pm

Part II: Ondrej Dyck
Atomic Level Manipulation of Matter using Scanning Transmission Electron Microscopy

Using STM-based Hydrogen Depassivation Lithography (HDL) on Si(100), it is possible to make sub-nm patterns in the monolayer of H on the Si surface via electron stimulated desorption of the H atoms. By applying creep and hysteresis correction and aligning to the Si surface lattice, the technique has become the highest resolution and precision lithography tool available. The H resist is used for selective, atomic-precision, deposition of Si, Ge, TiO2, and dopant atoms currently, and more materials and associate processes are being developed. A major advantage is that HDL is a digital atomic-scale fabrication process and is a scalable process.

4:00 pm – 5:00 pm

Part III: Stephen Jesse
Directing Phase Transformations at the Atomic Scale Electron Beams

• John Randall, Zyvex Labs
• Ondrej Dyck, Oak Ridge National Laboratory
• Stephen Jesse, Oak Ridge National Laboratory