2019 MRS Spring Meeting & Exhibit

Call for Papers

Symposium EP10—Heterovalent Integration of Semiconductors and Applications to Optical Devices

Heterovalent integration of semiconductor structures based on combinations of Group IV, II-VI, III-V and IV-VI materials enable the monolithic integration of many kinds of electronic and optoelectronic devices onto a single substrate, thus offering potentially transformative impact on future semiconductor devices and integrated circuits and their functionalities. The platform has unique properties such as lattice-matching to a single substrate, bandgap-energy coverage of a broad optical spectrum ranging from near-UV to far-infrared, and very high electron and hole mobilities. These properties are also ideal for electronic and optoelectronic devices such as FETs and photo-detectors. Structures composed of these materials have an unexplored richness of structural and electronic properties based on the heterovalent nature of their interfaces and synthetically introduced additional periodicities, such as superlattices.

This symposium will cover the underlying fundamental physics and chemistry of heterovalent semiconductors and their interfaces, including structural, magnetic, transport, optical and doping properties, as well as opportunities for integration into novel electronic and optoelectronic devices. Interdisciplinary topics related to the physics, chemistry, materials science and engineering of heterovalent semiconductors and their interfaces will be highlighted by invited abstracts in order to accelerate the exploitation of these materials into real-world device applications. This symposium is expected to offer new and enhanced insights into the basic understanding and future exploitation of heterovalent interfaces.


Topics will include:

  • Theory and modeling of heterovalent interfaces
  • Electronic structure and band offsets
  • Approaches to growth, including MBE, MOCVD, CVD and ALD
  • Novel structural, optical and transport properties
  • Applications and integration into novel devices for optical sensing covering IR up to Xray wavelengths

Invited Speakers:

  • Edith Bellet-Amalric (Centre National de la Recherche Scientifique, Institut Néel, France)
  • YuanPing Chen (U.S. Army Research Laboratory, USA)
  • Jacek Furdyna (University of Notre Dame, USA)
  • Shinjiro Hara (Hokkaido University, Japan)
  • Jennifer Hastie (University of Strathclyde, Scotland)
  • Young Joon Hong (Sejong University, Republic of Korea)
  • Stephanie Law (University of Delaware, USA)
  • Larry Lee (University of Illinois at Urbana-Champaign, USA)
  • Aidong Shen (City College of New York, USA)
  • Sivalingam Sivananthan (University of Illinois at Chicago, USA)
  • Kaoru Toko (Tsukuba University, Japan)
  • Achim Trampert (Paul-Drude Institut, Germany)
  • Grace Xing (Cornell University, USA)
  • Yong-Hang Zhang (Arizona State University, USA)

Symposium Organizers

David J. Smith
Arizona State University
Physics
USA
480-965-4540, david.smith@asu.edu

Isaac Hernandez-Calderon
Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional
Physics Department and Laboratory for Advanced Electron Nanoscopy
Mexico

Maria Tamargo
City College of New York
Chemistry
USA

Katsuhiro Tomioka
Hokkaido University
Graduate School of Information Science and Technology
Japan
(+81)11-706-6132, tomioka@rciqe.hokudai.ac.jp

Keywords for Abstract Submission

Electronic devices, Heterointerfaces, Heterovalent semiconductors